APTM100DUM90 - Advanced Power Technology

APTM100DUM90

–

Rev 0 July, 2004

APT website

–

http:/

/

www.advancedpower.com 1

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6

D2

S

Q1

D1

S2

G2

Q2

G1

S1

D2

G1

S1

S

G2

D1

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

S

ymbol Parameter Ma

x

ratings Unit

VDSS Drain - Source Breakdown Voltage 1000 V

Tc = 25°C 78

ID Continuo us Drain Current Tc = 80°C 59

IDM Pulsed Drain current 312

A

VGS Gate - Source Voltage ±30 V

RDSon Drain - Source ON Resistance 90 mΩ

PD Maximum Power Dissipation Tc = 25°C 1250 W

IAR Avalanche current (repetitive and non repetitive) 25 A

EAR Repetitive Avalanche Energy 50

EAS Single Pulse Avalanche Energy 3000 mJ

VDSS = 1000V

RDSon = 90mΩ max @ Tj = 25°C

ID = 78A @ Tc = 25°C

Applicatio

n

• AC Switches

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

Features

• Power MOS 7® MOSFETs

- Low RDSon

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- M5 power connectors

• High level of integration

Benefits

• Outstandi ng perfor mance at hi gh freq uenc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Low profile

D

ual Common Source

MOSFET Power Module

APTM100DUM90

–

Rev 0 July, 2004

APT website

–

http:/

/

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1000 V

VGS = 0V,VDS = 1000V Tj = 25°C 1

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 3

mA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 39A 90

mΩ

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V

IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±250 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cis s Input Capacitance 20.7

Coss Output Capacitance 3.5

Crss Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz 0.64

nF

Qg Total gate Charge 744

Qgs Gate – Source Charge 96

Qgd Gate – Drain Charge

VGS = 10V

VBus = 500V

ID = 78A 488

nC

Td(on) Tur n-o n Delay Ti me 18

Tr Rise Time 12

Td(off) Turn-off Delay Time 155

Tf Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 670V

ID = 78A

RG =1.2Ω 40

ns

Eon Tur n-on Switchi ng Energy X 3.6

Eoff Turn-off Switching Energy Y

Inductive switching @ 25°C

VGS = 15V, VBus = 670V

ID = 78A, RG = 1.2Ω 2.5

mJ

Eon Tur n-on Switchi ng Energy X 5.7

Eoff Turn-off Switching Energy Y

Inductive switching @ 125°C

VGS = 15V, VBus = 670V

ID = 78A, RG = 1.2Ω 3.1

mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 78 IS Continuo us Source c urrent

(Body diode)

Tc = 80°C 59 A

VSD Diode Forward Voltage VGS = 0V, IS = - 78A 1.3 V

dv/dt Peak Diode Recovery Z 10 V/ns

trr Reverse Recovery Time 1170 ns

Qrr Reverse Recovery Charge

IS = - 78A, VR = 500V

diS/dt = 400A/µs 65.1 µC

X Eon includes diode reverse recovery.

Y In accordance with JEDEC standard JESD24-1.

Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM100DUM90

–

Rev 0 July, 2004

APT website

–

http:/

/

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6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case 0.1 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

To heatsink M6 3 5

Torque Mounting torque For terminals M5 2 3.5 N.m

Wt Package Weight 280 g

Package outline

APTM100DUM90

–

Rev 0 July, 2004

APT website

–

http:/

/

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.02

0.04

0.06

0.08

0.1

0.12

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

5V

5.5V

6V

6.5V

7V

0

40

80

120

160

200

240

0 5 10 15 20 25 30

VDS, Drain to Source Voltage (V)

ID, Drain Current (A)

VGS=15, 10&8V

Low Voltage Output Characteristics Transfert Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

0

40

80

120

160

200

240

280

320

0123456789

VGS, Gate to Source Voltage (V)

ID, Drain Current (A)

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

RDS(on) vs Drain Current

VGS=10V

VGS=20V

0.8

0.9

1

1.1

1.2

1.3

1.4

0 40 80 120 160 200 240

ID, Drain Current (A)

RDS(on) Drain to Source ON Resistance

Normalized to

VGS=10V @ 39A

0

10

20

30

40

50

60

70

80

25 50 75 100 125 150

TC, Case Temperature (°C)

ID, DC Drain Current (A)

DC Drain Current vs Case Temperature

APTM100DUM90

–

Rev 0 July, 2004

APT website

–

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/

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0.85

0.90

0.95

1.00

1.05

1.10

1.15

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

BVDSS, Drain to Source Breakdown

Voltage (Normalized)

Breakdown Voltage vs Temperature ON resistance vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

RDS

(on), Drain to Source ON resistance

(Normalized)

VGS=10V

ID=39A

Threshold Voltage vs Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-50 -25 0 25 50 75 100 125 150

TC, Case Temperature (°C)

VGS(TH), Threshold Voltage

(Normalized)

Maximum Safe Operating Area

10ms

1ms

100µs

1

10

100

1000

1 10 100 1000

VDS , Drain to Source Voltage (V)

ID, Drain Current (A)

limited by RDSon

Single pulse

TJ=150°C

Ciss

Crss

Coss

100

1000

10000

100000

0 1020304050

VDS, Drain to Source Voltage (V)

C, Capacitance (pF)

Capacitance vs Drain to Source Voltage

VDS=200V

VDS =500V

VDS=800V

0

2

4

6

8

10

12

14

0 200 400 600 800 1000

Gate Charge (nC)

VGS, Gate to Source Voltage (V)

Gate Charge vs Gate to Source Voltage

ID=78A

TJ=25°C

APTM100DUM90

–

Rev 0 July, 2004

APT website

–

http:/

/

www.advancedpower.com 6

–

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Delay Times vs Current

td(on)

td(off)

0

40

80

120

160

200

20 40 60 80 100 120 140 160

ID, Drain Current (A)

td(on) and td(off) (ns)

VDS=670V

RG=1.2Ω

TJ=125°C

L=100µH

Rise and Fall times vs Current

tr

tf

0

20

40

60

80

20 40 60 80 100 120 140 160

ID, Drain Current (A)

tr and tf (ns)

VDS=670V

RG=1.2Ω

TJ=125°C

L=100µH

Switching Energy vs Current

Eon

Eoff

0

2

4

6

8

10

20 40 60 80 100 120 140 160

ID, Drain Current (A)

Switching Energy (mJ)

VDS=670V

RG=1.2Ω

TJ=125°C

L=100µH

Eon

Eoff

0

2

4

6

8

10

12

14

02468

Gate Resistance (Ohms)

Switching Energy (mJ)

Switching Energy vs Gate Resistance

VDS=670V

ID=78A

TJ=125°C

L=100µH

Hard

switching

ZCS

ZVS

0

50

100

150

200

250

0 10203040506070

ID, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

VDS=670V

D=50%

RG=1.2Ω

TJ=125°C

TC=75°C

TJ=25°C

TJ=150°C

1

10

100

1000

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

VSD, Source to Drain Voltage (V)

IDR, Reverse Drain Current (A)

Source to Drain Diode Forward Voltage

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