| Ordering number: EN4132 | Applications - High Definition CRT Display Video Output Applications, Wide-Band Amp. Features - Adoption of FBET process, - High Gain Bandwidth product (fp=400MHz). - High breakdown voltage (Vopo=120V). 25A1850/2SC4824 PNP/NPN Epitaxial Planar Silicon Transistors High Definition CRT Display Video Output Applications - Small reverse transfer capacitance and excellent high-frequency characteristic (Cye=1.7pF / NPN, 2.2pF / PNP). - Usage of radial taping to meet automatic mounting. ( ):25A1850 Absolute Maximum Ratings at Ta= 25C unit Collector: to-Base Voltage VcsBo ()120 Vv Collector-toEmitter Voltage Vcro ()120 Vv Emitter-to-Base Voltage VEBO ()3 Vv Collector Current Ic ()200 mA Peak Collector Current igp (-)400 mA Collector Dissipation Pec 1.3 WwW Junction Temperature Tj 160C Storage Temperature Tstg -55to +150 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current Icpo Vop=(-)80V,Ip=0 {-)0.1 pA Emitter Cutoff Current IEBO Vep=()2V,Ic=0 (-)1.0 pA DC Current Gain hrpQ) Ver=()10V, Ig=()10mA 60x 320 hpg(2) Vor=(-)L0V,Ie=(-)100mA = 20 Gain Bandwidth Product fir Vor =(~)10V, Ic=()50mA 400 MHz Output Capacitance Cob Vep=(-)30V, f=1MHz (2.8)2.1 pF Reverse Transfer Capacitance C,, Vep=()30V, f=1MHz (2.2)1.7 pF C-E Saturation Voltage Vckwat) Icg=()30mA, Ip=()3mA {J1.0 V B-E Saturation Voltage VBR(sat) Ic=()30mA4, Ip=()3mA (-)1.0 Vv * : The 2SA1850/28C4824 are classified by 10mA hp, as follows : 60 D 120 100 E 200 160 F 320 | SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN Package Dimensions 2084 45 (unit: mm) -#%&+ L9 7 in _ o a = (1.2 ne 10.5 0.5 | - Ec 8 - E : Emitter C : Collector B : Base i | 1 SANYO; PLP 2.5 [2.5 T 5132MH (KOTO) No.4132-1/4 .25A1850/2SC4824 25A1850 =20 Collector Currnt,I mA . I & -0.1mA Ip=0 6 4 -8 -12 -16 =20 Collector-to-Emitter Voltage, Voz V lc - Vee 7240 2S8A1850 Vor=-10V -20 oe il | Collector Current, I :mA -120 LIPS iF) ! . | | | -40 LL) 0 70.2 -04 -0.6 -0.8 -10 0 -1.2 Baseto-Emitter Voltage, Vaz V here - | 1850 Vor= 10V. Ta=75C 8 ~2 DC Current Gain, hrs Bd a -10 -100 Collector Current, 1 mA fr =| g 2SA1850 Vee= 10 Gain Bandwidth Product, fp MHz ~10 -100 : -10 Collector Current, Io mA 25C 4824 0. 0. 0.6mA 8 mA 4amA 0,8mA wey Collector Current, ig mA 0.1mA Ip=0 0 4 a 12 16 20 Collector-to-Emitter Voltage, Vog V 240 Ic - VBE 2504824 Vce=10V < 20 | 2 160 - c E 120 Cc | 5 aisle o m/a8 b if } 3 &0 et 2 2 40 ] o /} 0 0.2 0.4 0.6 0.8 1.0 1.2 Baseto-Emitter Voltage, Vgp V h - le 2504824 Ta=7 Vor=l0V 8 DC Current Gain, hpp o 10 . 1m Collector Current, I> mA fr - | gE Gain Bandwidth Product, fp MHz 8 fo Collector Current, Ip mA 100 No.4132-2/425A1850/25C4824 Collector-to-Emitter Baseto Emitter Saturation Voltage, Vogeay mV Saturation Voltage, Vagrsat) V Output Capacitance, C,, pF Reverse Transfer Capacitance, C,, pF o o Cob - Vee 25A1850 f=1MHz q a ed Pt -1O | J 4 =10 J 2 -1c Collector-te-Base Voltage, Veg Cre ~ Vee 2541850 f=1MHz 4 = J P| 7 [a Pe 7 10 4 > TL16 73 Tr Collector-to-Base Voltage, Veg V Vv - | 1850 Ip=10 Ta! -10 =100 - Collector Current, Ig mA Va E(sat) Ic 25A1850 Ig/ly= 10 10 poren , = 25C 25 Co |__| pas Eo ES Tae C 5 3 3 5 -10 e 5 ~100 7 Collector Current, Ic mA CollectortoEmitter Baseto-Emitter Cob - Vee 25C4824 fe, f=1MHz , 1G a 7 2 5 Pa o i ~ : = 3 5 16 1.0 i 10 : 100 Collector-to-Base Voltage, Vca - V Cre - Vee S 2804824 I f=1MIils 2 10 8 e 3 ~ wo a Pa a a c P| a F MN a pS 21.0 a 2 a > [a9 10 ; ? 10 . > ia Collector-to- Base Voltage, Veg V Vee(sat) 7 Ic 24 Ic/lp=10 g pa 1: Saturation Voltage, Vogisay mV 10 100 Collector Current, 1p mA Vee(sat) Ic 2SC4824 > loflp= 10 I 3}+ a 2 > a bo 3 1.9 > Taz oe 725C s tp 3 | >| T5C be 3 a Fo) 3 , ; 10 4 100 Collector Current, 1 mA No.4132-3/4Collector Current, Io .mA 10 | Ta= 25C ~ 25A1850/25C4824 AS P Ta 4824 a Nw bP Qo o Oo Le, ey, Ay 2 or Collector Dissipation, Pp W o - o 2 Ne Single pulse For PNP, minus sign is o Oo 60 80 100 12 140 10 Collector-to-Emitter Voltage, Vcg V Ambient Temperature,Ta C. M@ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTG., its affiliates, Subsidiaries and distributors and ail their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cast and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC 0G, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. B Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.4132-4/4