SMBTA56/MMBTA56 PNP Silicon AF Transistor * Low collector-emitter saturation voltage * Complementary type: SMBTA06 / MMBTA06(NPN) 2 3 1 * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 Collector current IC Peak collector current, tp 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 500 1 Unit V mA A mA TS 79C -65 ... 150 Value 215 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-08-05 SMBTA56/MMBTA56 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 80 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 80 - - V(BR)EBO 4 - - IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 80 V, IE = 0 - - 0.1 VCB = 80 V, IE = 0 , TA = 150 C - - 20 - - 0.1 Collector-emitter cutoff current ICEO VCE = 60 V, IB = 0 DC current gain1) - hFE IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, VCE = 1 V 100 - - VCEsat - - 0.25 VBE(ON) - - 1.2 fT - 100 - MHz Ccb - 7 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 10 mA Base-emitter voltage1) IC = 100 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 2 2011-08-05 SMBTA56/MMBTA56 DC current gain hFE = (IC) VCE = 1 V Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 EHP00852 10 3 EHP00850 10 3 mA C h FE 100 C 25 C -50C 100 C 10 2 25 C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 3 0.0 0.5 V C V CEsat Base-emitter saturation voltage Collector current IC = (VBE ) IC = (VBEsat), hFE = 10 VCE = 1V EHP00849 10 3 mA mA 100 C 25 C -50 C 10 2 10 2 5 10 1 10 1 5 5 10 0 10 0 5 5 0 0.5 1.0 V 100 C 25 C -50 C C 5 10 -1 EHP00846 10 3 C 1.0 10 -1 1.5 0 0.5 V 1.0 1.5 V BE V BEsat 3 2011-08-05 SMBTA56/MMBTA56 Collector cutoff current ICBO = (TA) VCB = 80 V Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz fT CBO 10 5 max 3 EHP00848 10 3 MHz EHP00851 10 4 nA 10 2 5 5 10 2 typ 10 1 5 5 10 0 5 10 1 10 0 10 -1 50 0 C 150 100 5 10 1 5 10 2 mA 10 3 C TA Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = (TS) Emitter-base capacitance Ceb = (VEB) 65 pF 360 mW 300 50 270 45 Ptot CCB(CEB ) 55 40 240 210 35 180 30 150 25 120 CEB 20 90 15 60 10 5 0 0 30 CCB 4 8 12 16 V 0 0 22 VCB(VEB 4 15 30 45 60 75 90 105 120 C 150 TS 2011-08-05 SMBTA56/MMBTA56 Permissible Pulse Load RthJS = (tp) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 10 4 Ptotmax/ PtotDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 10 1 s 10 10 0 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2011-08-05 Package SOT23 SMBTA56/MMBTA56 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-08-05 SMBTA56/MMBTA56 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-08-05