EGF1AHE3/67A - Vishay [General Semiconductor]

Document Number: 88579 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Surface Mount Glass Passivated Ultrafast Rectifier

EGF1A thru EGF1D

Vishay General Semiconductor

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020, LF maximum peak of

250 °C

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

MECHANICAL DATA

Case: DO-214BA, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 50 V to 200 V

IFSM 30 A

trr 50 ns

VF1.0 V

TJ max. 175 °C

DO-214BA (GF1)

SUPERECTIFIER®

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT

Device marking code EA EB EC ED

Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V

Maximum RMS voltage VRMS 35 70 105 140 V

Maximum DC blocking voltage VDC 50 100 150 200 V

Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 30 A

Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88579

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGF1A thru EGF1D

Vishay General Semiconductor

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Note

(1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 C unless otherwise specified)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT

Maximum instantaneous forward voltage 1.0 A VF (1) 1.0 V

Maximum DC reverse current

at rated DC blocking voltage

TA = 25 °C

IR (1) 5.0

μA

TA = 125 °C 50

Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 50 ns

Typical junction capacitance 4.0 V, 1 MHz CJ15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT

Typical thermal resistance

RJA (1) 85

°C/W

RJL (1) 30

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

EGF1D-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel

EGF1D-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel

EGF1DHE3/67A (1) 0.104 67A 1500 7" diameter plastic tape and reel

EGF1DHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel

1.0

7550250 100 125 150 175

Average Forward Rectified Current (A)

Lead Temperature (°C)

0.5

Resistive or Inductive Load

P.C.B. Mounted on

0.2" x 0.2" (5.0 mm x 5.0 mm)

Copper Pad Areas

1 10010

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

TJ = TJ Max.

8.3 ms Single Half Sine-Wave

Document Number: 88579 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGF1A thru EGF1D

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.40.2 0.6 0.8 1.0 1.2 1.4 1.6

Instantaneous Forward Voltage (V)

0.01

0.1

100

Instantaneous Forward Current (A)

1.8

= 150 °C

Pulse Width = 300 µs

1 % Duty Cycle

= 25 °C

6040200 10080

0.01

0.1

100

1000

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

TJ = 100 °C

TJ = 150 °C

TJ = 25 °C

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 101 100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

0.01 0.1 101 100

100

0.1

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.015 (0.38)

0.030 (0.76)

0.060 (1.52)

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.100 (2.54)

0.118 (3.00)

0.040 (1.02)

0.066 (1.68)

0.098 (2.49)

0.108 (2.74)

0.006 (0.152) TYP.

DO-214BA (GF1)

0.076 (1.93)

MAX.

0.220 (5.58)

REF.

0.060 (1.52)

MIN.

Mounting Pad Layout

Cathode Band

0.066 (1.68)

MIN.

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Revision: 12-Mar-12 1Document Number: 91000

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