EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES * Superectifier structure for high reliability condition * Cavity-free glass-passivated junction SUPERECTIFIER(R) * Ideal for automated placement * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C DO-214BA (GF1) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 1.0 V TJ max. 175 C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code EGF1A EGF1B EGF1C EGF1D EA EB EC ED UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL = 125 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 65 to + 175 C Operating junction and storage temperature range Document Number: 88579 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGF1A thru EGF1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A EGF1A EGF1B VF (1) TA = 25 C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 125 C EGF1C EGF1D UNIT 1.0 V 5.0 IR (1) A 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance EGF1A EGF1B EGF1C RJA (1) 85 RJL (1) 30 EGF1D UNIT C/W Note Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.104 67A 1500 7" diameter plastic tape and reel 0.104 5CA 6500 13" diameter plastic tape and reel EGF1D-E3/67A EGF1D-E3/5CA (1) 0.104 67A 1500 7" diameter plastic tape and reel EGF1DHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel EGF1DHE3/67A Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified) 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.5 Resistive or Inductive Load P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88579 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGF1A thru EGF1D Vishay General Semiconductor 70 10 TJ = 150 C TJ = 25 C 1 0.1 Pulse Width = 300 s 1 % Duty Cycle 0.01 0.2 50 40 30 20 10 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) 1000 Instantaneous Reverse Leakage Current (A) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 60 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 100 TJ = 150 C 10 TJ = 100 C 1 0.1 TJ = 25 C 0.01 0 20 40 60 80 10 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.076 (1.93) MAX. 0.066 (1.68) MIN. 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 (1.52) MIN. 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) Document Number: 88579 Revision: 15-Mar-11 0.006 (0.152) TYP. 0.220 (5.58) REF. 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000