DTC143EUA
Digital Transistors
Features
x Epitaxial Planar Die Construction
xComplementary PNP Types Available
x Built-In Biasing Resistors
Absolute maximum ratings @ 25к
Symbol Parameter Min Typ Max Unit
IC Collector current --- 100 --- mA
VIN Input voltage -10 --- +30V
Pd Power dissipation --- 200 --- mW
Tj Junction temperature --- 150 ---
ć
Tstg Storage temperature -55 --- 150 ć
Electrical Characteristics @ 25к
Symbol Parameter Min Typ Max Unit
VI(off) ------0.5 V
VI(on)
Input voltage (VCC=5V, IO=100A)
(VO=0.3V, IO=20mA) 3.0 --- --- V
VO(on) Output voltage (IO=10mA,Ii=0.5mA) --- --- 0.3 V
II Input current (VI=5V) --- ---1.8 mA
IO(off) Output current (VCC=50V, VI=0) --- --- 0.5
A
GI DC current gain (VO=5V, IO=10mA)20 --- ---
R1 Input resistance 3.294.76.11 K¡
R2/R1 Resistance ratio 0.8 1 1.2
fT
Transition frequency
(VCE=10V, IE=5mA, f=100MHz) --- 250 --- MHz
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: C 2013/09/24
1.IN
2.GND
3.OUT
TM
Micro Commercial Components
www.mccsemi .com
1 of 3
x Marking: 23
VCC Supply Voltage --- --- 50 V
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1 SOT-323
Suggested Solder
Pad Layout
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .083 .096 2.10 2.45
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .006 .016 .15 .40
A
C
B
D
E
F
GH
1.90
0.90
0.65
DIMENSIONS
K
12
Halogen free available upon request by adding suffix "-HF"
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