VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors Three Phase Controlled Bridge (Power Modules), 55 A to 110 A FEATURES * Package fully compatible with the industry standard INT-A-PAK power modules series * High thermal conductivity package, electrically insulated case * Excellent power volume ratio * 4000 VRMS isolating voltage * UL E78996 approved * Designed and qualified for industrial level MTK * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IO 55 A to 110 A VRRM 800 V to 1600 V Package MTK Circuit configuration Three phase bridge A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t CHARACTERISTICS VALUES 5.MT...K VALUES 9.MT...K VALUES 11.MT...K UNITS 55 90 110 A TC 85 85 85 C 50 Hz 390 950 1130 60 Hz 410 1000 1180 50 Hz 770 4525 6380 60 Hz 700 4130 5830 45 250 63 800 I2t 7700 A A2s A2s VRRM Range 800 to 1600 V TStg Range -40 to +125 C TJ Range -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-5.MT...K VS-9.MT...K VS-11.MT...K VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 IRRM/IDRM, MAXIMUM AT TJ = 125 C mA 10 20 Revision: 17-Aug-17 Document Number: 94353 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER Maximum DC output current at case temperature SYMBOL IO TEST CONDITIONS 120 rect. conduction angle t = 10 ms Maximum peak, one-cycle forward, non-repetitive on state surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ max. No voltage reapplied 100 % VRRM reapplied VALUES 5.MT...K VALUES VALUES UNITS 9.MT...K 11.MT...K 55 90 110 A 85 85 85 C 390 950 1130 410 1000 1180 330 800 950 345 840 1000 770 4525 6380 700 4130 5830 540 3200 4510 500 2920 4120 t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 1.17 1.09 1.04 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.45 1.27 1.27 rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 12.40 4.10 3.93 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ maximum 11.04 3.59 3.37 VTM Ipk = 150 A, TJ = 25 C, tp = 400 s single junction 2.68 1.65 1.57 dI/dt TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s 150 Maximum non-repetitive rate of rise of turned on current A2s A2s V Low level value on-state slope resistance Maximum on-state voltage drop A m Maximum holding current IH TJ = 25 C, anode supply = 6 V, resistive load, gate open circuit 200 Maximum latching current IL TJ = 25 C, anode supply = 6 V, resistive load 400 V A/s mA BLOCKING PARAMETER RMS isolation voltage Maximum critical rate of rise of off-state voltage VALUES 5.MT...K VALUES 9.MT...K VALUES 11.MT...K SYMBOL TEST CONDITIONS VISOL TJ = 25 C all terminal shorted, f = 50 Hz, t = 1 s 4000 V TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit 500 V/s dV/dt (1) UNITS Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i. e. 113MT160KBS90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger SYMBOL PGM PG(AV) IGM TEST CONDITIONS TJ = TJ maximum IGT VALUES 9.MT...K 10 2.5 2.5 VALUES 11.MT...K UNITS W A 10 - VGT VGT VALUES 5.MT...K TJ = - 40 C TJ = 25 C TJ = 125 C TJ = - 40 C TJ = 25 C TJ = 125 C Anode supply = 6 V, resistive load VGD 4.0 2.5 1.7 270 150 80 V mA 0.25 V 6 mA TJ = TJ maximum, rated VDRM applied IGD Revision: 17-Aug-17 Document Number: 94353 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TJ, TStg Maximum thermal resistance, junction to case VALUES 9.MT...K VALUES 11.MT...K - 40 to 125 RthJC Maximum thermal resistance, case to heatsink per module RthCS 0.18 0.14 0.12 DC operation per junction 1.07 0.86 0.70 120 C rect. conduction angle per module 0.19 0.15 0.12 120 C rect. conduction angle per junction 1.17 0.91 0.74 Approximate weight K/W 0.03 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. to terminal UNITS C DC operation per module Mounting surface smooth, flat and grased to heatsink Mounting torque 10 % VALUES 5.MT...K TEST CONDITIONS 4 to 6 Nm 3 to 4 225 g R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180 120 90 60 30 180 120 90 60 30 5.MT...K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 9.MT...K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 11.MT...K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 K/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Instantaneous On-State Current (A) 130 Maximum Allowable Case Temperature (C) 5.MT..K Series 120 110 120 (Rect.) 100 + 90 ~ - 80 0 94353_01 10 20 30 40 50 Total Output Current (A) Fig. 1 - Current Ratings Characteristic 1000 TJ = 25 C TJ = 125 C 100 60 10 5.MT..K Series Per junction 1 0 94353_02 1 2 3 4 5 6 7 Instantaneous On-State Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Revision: 17-Aug-17 Document Number: 94353 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors 220 180 160 140 120 (Rect.) 120 100 80 60 40 20 200 0. 3 180 160 0.5 140 0.7 0. 4 K/ W K/ W K/ W K/ W 120 R - Maximum Total Power Loss (W) 5.MT..K Series TJ = 125 C 200 K/W .0 5 =0 A R thS /W 2K W 0.1 K/ 2 0. Maximum Total Power Loss (W) 220 1.0 100 K/W 1.5 K /W 80 60 40 20 0 0 0 5 Total Output Current (A) 94353_03a 0 10 15 20 25 30 35 40 45 50 55 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) 94353_03b Fig. 3 - Total Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 250 200 5.MT..K Series Per junction 130 9.MT..K Series Maximum Allowable Case Temperature (C) Peak Half Sine Wave On-State Current (A) 350 120 100 + 90 80 1 350 300 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 250 200 5.MT..K Series Per junction 150 0.01 0.1 0 100 Fig. 5 - Maximum Non-Repetitive Surge Current 40 60 80 100 Total Output Current (A) Fig. 6 - Current Ratings Characteristic 1000 100 1 Pulse Train Duration (s) 20 94353_06 Instantaneous On-State Current (A) Peak Half Sine Wave On-State Current (A) 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current 400 94353_05 ~ - 150 94353_04 120 (Rect.) 110 94353_07 TJ = 25 C TJ = 125 C 10 9.MT..K Series Per junction 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Output Current Fig. 7 - Forward Voltage Drop Characteristics Revision: 17-Aug-17 Document Number: 94353 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors 300 K/ W 150 1.0 100 K/W R - 0.5 W Maximum Total Power Loss (W) W K/ 50 200 W K/ .05 100 0.4 K/ =0 150 3 A 120 (Rect.) 2 0. W 200 0. 250 R thS 250 K/ 9.MT..K Series TJ = 125 C 12 0. Maximum Total Power Loss (W) 300 0.7 K/W K/W 1.5 K /W 50 0 0 0 10 20 30 40 50 60 70 80 Total Output Current (A) 94353_08a 0 90 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) 94353_08b Fig. 8 - Total Power Loss Characteristics 850 750 11.MT..K Series Maximum Allowable Case Temperature (C) 800 Peak Half Sine Wave On-State Current (A) 130 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 700 650 600 550 500 9.MT..K Series Per junction 450 120 100 + 90 80 10 1 800 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 700 600 500 400 300 0.01 9.MT..K Series Per junction 0.1 0 Fig. 10 - Maximum Non-Repetitive Surge Current 40 60 80 100 120 Total Output Current (A) Fig. 11 - Current Ratings Characteristic 1000 100 1 Pulse Train Duration (s) 20 94353_11 Instantaneous On-State Current (A) 900 Peak Half Sine Wave On-State Current (A) 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current 1000 94353_10 ~ - 400 94353_09 120 (Rect.) 110 94353_12 TJ = 25 C TJ = 125 C 10 11.MT..K Series Per junction 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous On-State Voltage (V) Fig. 12 - Forward Voltage Drop Characteristics Revision: 17-Aug-17 Document Number: 94353 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors 350 Maximum Total Power Loss (W) Maximum Total Power Loss (W) K/ W R - 150 W /W 0.5 8K 50 200 K/ W K/ .05 100 0.4 2 =0 150 0.3 A 120 (Rect.) 200 0. 250 W K/ 250 300 12 0. 11.MT..K Series TJ = 125 C 300 R t hS 350 K/W 0.7 K/W 1.0 K /W 100 1.5 K 50 /W 0 0 0 0 10 20 30 40 50 60 70 80 90 100 110 94353_13b Total Output Current 94353_13a 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 13 - Total Power Loss Characteristics 1000 800 700 600 500 1000 11.MT..K Series Per junction 94353_14 900 800 700 600 500 10 11.MT..K Series Per junction 400 0.01 400 1 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 1100 Peak Half Sine Wave On-State Current (A) 900 Peak Half Sine Wave On-State Current (A) 1200 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 0.1 1.0 Pulse Train Duration (s) 94353_15 Fig. 15 - Maximum Non-Repetitive Surge Current ZthJC - Transient Thermal Impedance (K/W) 10 1 Steady state value RthJC = 1.07 K/W RthJC = 0.86 K/W RthJC = 0.70 K/W (DC operation) 5.MT..K Series 9.MT..K Series 11.MT..K Series 0.1 0.01 Per junction 0.001 0.001 94353_16 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 16 - Thermal Impedance ZthJC Characteristics Revision: 17-Aug-17 Document Number: 94353 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors 1 (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 ; tr = 0.5 s, tp 6 s b) Recommended load line for 30 % rated dI/dt: 20 V, 65 tr = 1 s, tp 6 s (a) VGD IGD 0.01 0.001 = 25 C TJ = 125 C 0.1 TJ = -40 C (b) TJ Instantaneous Gate Voltage (V) 10 (4) Frequency Limited by PG(AV) 5.MT...K, 9.MT...K, 11.MT...K Series 0.01 0.1 (1) (2) (3) 1 10 100 1000 Instantaneous Gate Current (A) 94353_17 Fig. 17 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 11 3 MT 160 1 2 3 4 5 K S90 PbF 6 7 1 - Vishay Semiconductors product 2 - 3 - 4 - Current rating code: 5 = 55 A (average) 9 = 90 A (average) 11 = 110 A (average) Circuit configuration code: 1 = negative half-controlled bridge 2 = positive half-controlled bridge 3 = full-controlled bridge Essential part number 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - Critical dV/dt: None = 500 V/s (standard value) S90 = 1000 V/s (special selection) 7 - PbF = Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION A B C 6 1 2 4 A C A B 3 1 E Full-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) C 6 5 D B F D 2 4 3 5 E Positive half-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) F D E Negative half-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95004 Revision: 17-Aug-17 Document Number: 94353 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTK (with and without optional barrier) DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 8.5 0.5 (0.34 0.02) 30 0.5 (1.17 0.02) 24 0.5 (0.94 0.02) 38 0.5 (1.5 0.02) 25.5 0.5 (1.004 0.02) 28 1 (1.11 0.04) Screws M5 x 0.8 length 10 35 0.3 (1.38 0.01) 75 0.5 (2.95 0.02) A 2 3 4 B C 5 6 7 8 O 6.5 0.2 (O 0.26 0.01) 14 0.3 (0.55 0.01) 1 D 18 0.3 (0.71 0.01) 5 0.3 (0.2 0.01) F E 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) Document Number: 95004 Revision: 27-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions MTK (with and without optional barrier) Vishay Semiconductors DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 24 0.5 (0.94 0.02) 8.5 0.5 (0.34 0.02) 30 0.5 (1.17 0.02) 25.5 0.5 (1.004 0.02) 28 1 (1.11 0.04) Screws M5 x 0.8 length 10 35 0.3 (1.38 0.01) 75 0.5 (2.95 0.02) A 2 3 4 B C 5 6 7 8 O 6.5 0.2 (O 0.26 0.01) 14 0.3 (0.55 0.01) 1 D 18 0.3 (0.71 0.01) 5 0.3 (0.2 0.01) F E 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95004 Revision: 27-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-92MT80KPBF