2N3773
Silicon NPN Transistor
Audio Amplifier Output
TO−3 Type Package
Description:
The 2N3773 is a planar NPN transistors in a TO−3 type package intended for use in linear amplifiers
and inductive switching applications.
Features:
DHigh Power Dissipation
DLow Collector−Emitter Saturation Voltage
Absolute Maximum Ratings:
Collector−Emitter Voltage (IB = 0), VCEO 140V..............................................
Collector−Emitter Voltage (VBE = −1.5V), VCEV 160V........................................
Collector−Base Voltage (IE = 0), VCBO 160V...............................................
Emitter−Base Voltage (IC = 0), VEBO 7V...................................................
Collector Current, IC16A................................................................
Collector Peak Current (tp < 5ms), ICM 30A................................................
Base Current, IB4A....................................................................
Base Peak Current (tp < 1ms), IBM 15A....................................................
Total Dissipation (TC +25C), PC150W..................................................
Operating Junction Temperature, Tj+200C................................................
Storage Temperature Range, Tstg −65C to +200C........................................
Thermal Resistance, Junction−to−Case, RthJC 1.17C/W....................................
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICEV VCE = 140V,
VBE = −1.5V
− − 2 mA
TC = +150C− − 10 mA
Collector Cutoff Current ICEO VCE = 120V, IB = 0 − − 10 mA
Collector Cutoff Current ICBO VCB = 140V, IE = 0 − − 2 mA
Emitter Cutoff Current IEBO VEB = 7V, IC = 0 − − 5 mA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 140 − − V
Collector−Emitter Sustaining Voltage VCEV(sus) IC = 100mA, VBE = −1.5V, Note 1 160 − − V
Collector−Emitter Sustaining Voltage VCER(sus) IC = 200mA, RBE = 100, Note 1 150 − − V
Collector−Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 800mA, Note 1 − − 1.4 V
IC = 16A, IB = 3.2A, Note 1 − − 4 V
Base−Emitter Voltage VBE VCE = 4V, IC = 8A, Note 1 − − 2.2 V
DC Current Gain hFE VCE = 4V,
Note 1
IC = 8A 15 −60
IC = 16A 5− −
Second Breakdown Collector Current Is/b VCE = 30V, t = 1sec (non−repetitive) 5− − A
Note 1. Pulse Test: Pulse Width = 300s. Duty Cycle 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
