2010-03-12
BFP540FESD
1
1
2
4
3
NPN Silicon RF Transistor*
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding Gms = 20 dB
Noise Figure F = 0.9 dB
• SIEGET 45 - Line
• Pb-free (ROHS compliant) package1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540FESD AUs 1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0°C
T
A
≤ 0°C
VCEO
4.5
4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC80 mA
Base current IB8
Total power dissipation2)
TS ≤ 80 °C
Ptot 250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
2010-03-12
BFP540FESD
2
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 280 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 10 µA
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
hFE 50 110 170 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2010-03-12
BFP540FESD
3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 4 V, f = 1 GHz
fT21 30 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.16 0.26 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.4 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
F
-
-
0.9
1.3
1.4
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 20 - dB
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
Gma - 14.5 - dB
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz
|S21e|2
15.5
-
18
13
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz
IP3- 24.5 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
P-1dB - 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
2010-03-12
BFP540FESD
4
SPICE Parameter
For the SPICE model as well as for S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.model.
Please consult our website and download the latest versions before actually
starting your design.
You find the BFP540FESD SPICE model in the internet in MWO- and ADS- tools
very quickly and conveniently.
The simulation data have been generated and verified using typical devices.
The BFP540FESD SPICE model reflects the typical DC- and RF-performance with
high accuracy.
The SPICE model of BFP540FESD will be available in Q02 / 2010.
2010-03-12
BFP540FESD
5
Package TSFP-4
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
BFP420F
Type code
Pin 1
0.35
0.45
0.9
0.5 0.5
40.2
1.55 0.7
1.4
8
Pin 1
±0.05
0.2
±0.05
1.4
12
10˚ MAX.
±0.05
0.8
1.2
±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5
±0.05
0.5
±0.05
43
Manufacturer
2010-03-12
BFP540FESD
6
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
