Product Information 2004 MEMORY DRAM Modules Including DDR2 Modules w w w. i n f i n e o n . c o m / m e m o r y Never stop thinking. Introduction One-Stop-Shopping for DRAM Modules J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules. These DRAM modules come in a variety of designs and densities to meet your application-specific needs. W H E T H E R Y O U ' R E L O O K I N G to ramp up speed, increase density, or extend battery life, you'll find answers in this brochure. Many of our DRAM modules now also come in green packages, enabling you to get a head start on upcoming environmental regulations. Highlights of this Brochure Range of typical applications Short introduction of Fully Buffered DIMMs, MicroDIMMs, and Mini-DIMMs Upcoming technical and product-related trends DDR2 module details DDR module information Package-based information such as chip-sized package and stacked die technology Green (lead and halogen-free), more environmentally friendly modules The following table covers all products and densities available: Double Data Rate (DDR / DDR2), Dual Inline Memory Modules (DIMMs). 128 MB Unbuffered DDR Registered DDR Registered DDR Reduced Height SO-DIMM DDR Unbuffered DDR2 Registered DDR2 SO-DIMM DDR2 + + + 256 MB 512 MB 1 GB 2 GB + + + + + + + + + + + + + + + + + + + + + + + + + + 4 GB + For more detailed information on the products presented in the table, please visit www.infineon.com/memory. 2 Applications D E P E N D I N G O N T H E I R main application, the memory industry differentiates between Unbuffered DIMM, Registered DIMM, Fully Buffered DIMM (FBDIMM), Small Outline DIMM (SO-DIMM), MicroDIMM, and Mini-DIMM. Typically used in Unbuffered DIMM Desktop PC systems Memory that does not contain buffers or registers located on the module. Low-end servers ( Number of pins: DDR2 = 240, DDR = 184, SDR = 168 ) Workstations Registered DIMM High-end servers Several additional circuits are on the module, including a Phase Lock Loop High-end workstations for timing alignments, a number of drivers that buffer the control, and T O D address signals from the memory controller on the motherboard. A ( Number of pins: DDR2 = 240, DDR = 184, SDR = 168 ) Y Small Outline DIMM (SO-DIMM) Space-constrained applications An enhanced version of a standard DIMM. A 72-pin small outline DIMM is Laptops, mobile workstations about half the length of a 72-pin SIMM. ECC SO-DIMMs in networking (Number of pins: DDR / DDR2 = 200, SDR = 144) applications (routers) Fully Buffered DIMM (FBDIMM) High-speed and high-density For server applications where lots of DRAM components are required, a new applications solution complementing the registered DIMM modules for data rates of 533 Mbits/s High-end servers and and above becomes necessary. FBDIMM is a new memory interconnect workstations technology standard for high-end memory connections. FBDIMM transitions T O the memory channel to a point-to-point interface, replaces the on-DIMM PLL, M and registers with a memory buffer chip. O MicroDIMM Sub-notebooks Small form factor SO-DIMMs. Mini PCs ( Number of pins: DDR2 = 214 ) R R O W Mini-DIMMs for DDR2 Blade servers Small form factor registered DIMMs. Mobile workstations ( Number of pins: DDR2 = 244 ) Routers ( Mini-ECC-DIMM ) 3 DDR2 MicroDIMM, 512 MB, 512 Mbit based, FBGA package I n d u s t r i a l Tr e n d s A S A P R O V I D E R of a wide spectrum of memory components and storage modules, Infineon offers the pertinent products for density and speed-intensive applications from its wide range of modules. In addition there is a trend towards smaller sized modules - since applications are becoming more transportable and, thus, smaller as well. High-density modules Smaller-sized modules FBGA-based DIMMs as planar design, SO-DIMMs e.g. DDR2 2 GB registered / Module size required for notebooks 1 GB SO-DIMM MicroDIMMs Stacked-die FBGA technology for Small SO-DIMMs for sub-notebooks high-end applications, 1U Registered DIMMs e.g. DDR2 4 GB registered DIMM Reduced-height registered DIMMs for blade servers High-speed modules DDR: PC2700/3200 DDR2: PC2 3200/4200/5300 DDR2: Fully Buffered DIMM PC2 4200 and above 4 Mini-DIMMs Small registered DIMMs for blade servers, workstations, and routers Pr o d u c t Tr e n d s Expected I/O transition 1 DDR2 0.8 DDR 0.6 SDRAM 0.4 0.2 0 Q1 /04 Q 2/04 Q3 /04 Q 4 /04 Q1 /05 Q 2/05 Q3 /05 Q 4 /05 (Source: Infineon Technologies) DDR mainstream in 2004 Applications Modules Typical products Desktops Unbuffered DIMMs DDR400 Servers, workstations Registered DIMMs ECC unbuffered DIMMs DDR333 DDR400 Notebooks SO-DIMMs DDR400 DDR333 Applications Modules Typical products Desktops Unbuffered DIMMs DDR2-533 Servers, workstations Registered DIMMs ECC unbuffered DIMMs DDR2-400 DDR2-533 Notebooks SO-DIMMs MicroDIMMs DDR2-400/533 DDR mainstream in 2005 Bandwidth roadmap 20 Single channel DIMM Channel bandwidth [GBps] 10 DDR3 1333 8 DDR3 1600 DDR3 1066 6 DDR2/3 800 DDR2 667 4 DDR2 533 2 1 0.8 0 PC 133 DDR 200 1999 2000 DDR 266 DDR 333 DDR 400 PC 100 1998 2001 2002 2003 2004 2005 Year of market introduction 2006 2007 2008 2009 (Source: Infineon Technologies) 5 DDR2 T H E N E X T G E N E R A T I O N of synchronous DRAMs is called DDR2 and is a natural extension of the existing DDR standard. DDR2 has been introduced at operation frequencies of 200 MHz (DDR2-400) and will be extended to 266 MHz (DDR2-533), 333 MHz (DDR2-667) for main memory, and even 400 MHz (DDR2-800) for special applications. DRAM densities start at the 512 Mbit level as the main volume, followed by 256 Mbit and 1 Gbit for high-end server applications. This DRAM architecture change enables twice the bandwidth without increasing the demand on a new DRAM core while keeping power low. Key drivers for the technology switch to DDR2 are the demand for higher speeds and for DDR2 being an open standard. Infineon recently introduced the first DDR2 chips with 512 Mb capacity and is well positioned to supply the rapidly growing market with cost-efficient products based on a qualified 110 nm process. DDR2 module, 2 GB, 512 Mbit based, FBGA package 6 Key benefits of DDR2 are the higher bandwidths, lower power consumption, and the better system margins at higher speeds in servers. Power supply F O L L O W I N G T H E I N D U S T R I A L trend the DDR2-DRAM supply voltage has been reduced from 2.5 V to 1.8 V for core and data in/outputs. Power-Down D D R 2 A D D S M O R E power-saving options. When no read or write access is in progress with a row open, the DRAM can be brought into Active Power-Down Mode. In addition to the standard Active Power-Down Mode, already available on DDR components, a new "Low Power Active Power-Down Mode" can be activated by the Mode Register for additional power savings. ODT - On-Die Termination O N D D R - B A S E D S Y S T E M S the termination of the signal lines is done externally on the motherboard. DDR2 offers the option of terminating signals in the DRAM itself, by adding one additional input pin to turn termination on or off. This feature drastically reduces wave reflections and enhances overall system margins. A "strong" or "weak" termination - depending on the application requirements - can be programmed within the Extended Mode Register. Data strobes D D R 2 O F F E R S T H E O P T I O N for differential data strobing to enhance signal margins. There is even the option to have different data strobes for reads and writes. All these new features can be selected by programming the Extended Mode Register during power-on. Package A L L D D R 2 P R O D U C T S are produced in FBGA packages. 7 DDR2 SO-DIMM, 1 Gbit, 512 Mbit based, FBGA package DDR2 Unbuffered DIMM Density Density Infineon offers unbuffered modules with densities of 256 MB, 512 MB, 1 GB, and 2 GB. Speed The modules are available in the Unbuffered DIMM 2 GB 1 GB Unbuffered DIMM 512 MB Unbuffered DIMM 256 MB Unbuffered DIMM speeds PC2-3200 and PC2-4200, 2004 followed by PC2-5300. 2005 Registered DIMM Density Density Infineon offers registered modules with densities of 256 MB, 512 MB, FBD 4 GB Registered DIMM 1 GB, 2 GB, and 4 GB. 2 GB FBD Registered DIMM Speed The standard modules are available 1 GB FBD Registered DIMM in the speeds PC2-3200. FBD 512 MB Registered DIMM Registered DIMM 256 MB 2004 2005 Fully Buffered DIMM (FBDIMM) W I T H T H E E V E R - I N C R E A S I N G operation frequency the number of DIMM modules on a memory channel with the current parallel stub-bus interface has hit saturation point. For server applications where lots of DRAM components are required, a new solution replacing the registered DIMM modules for data rates of 533 Mbits/s and above becomes necessary. 8 FBDIMM requires high-speed chip design and DRAM expertise Transitions the memory channel to a serial interface New memory interconnect technology standard for high-end Replaces the on-DIMM PLL and registers memory connections Specification under development by JEDEC SO-DIMM Density Infineon offers SO-DIMM modules Density SO-DIMM 2 GB with densities of 256 MB, 512 MB, 1 GB, and 2 GB. SO-DIMM 1 GB 512 MB SO-DIMM 256 MB SO-DIMM Speed The modules are available in the speeds PC2-3200, PC2-4200, 2004 2005 and PC2-5300. MicroDIMM Density Density Infineon plans to offer MicroDIMM modules with densities of 256 MB, 512 MB, and 1 GB. MicroDIMM 1 GB 512 MB MicroDIMM 256 MB MicroDIMM Speed The modules are available in the 2004 2005 speeds PC2-3200 and PC2-4200. More detailed information on www.infineon.com/memory New Modules with DDR2 Mini-DIMMs for DDR2 (244-pin) Ultra-high density DIMMs for DDR2 Small form factor registered DIMMs. Infineon plans to offer 4 GB registered DIMM as tall versions. Typically used in Typically used in Blade servers High-end server Mobile workstations Storage applications Routers 9 DDR D D R S D R A M S (synchronous DRAMs) increase speed by Module Highlights reading data on both the rising edge and the falling edge of the clock pulse, essentially doubling the peak data bandwidth without increasing DDR high-density DIMMs clock frequency. DDR's low latencies and high bandwidth make it interesting - 2 GB registered DIMM for the customer. - 1 GB SO-DIMM DDR high-speed DIMMs T O M E E T T H E M A R K E T needs, Infineon offers a wide range of DDR DIMMs. - DDR400 available in unbuffered, registered, and SO-DIMM version FBGA package Key benefits Compact structure High performance Low power consumption Package TSOP and FBGA packages are provided. DDR module, 2 GB, 512 Mbit based, FBGA package 10 - DDR333 registered DIMMs -1 GB - DDR333 SO-DIMMs -512 MB, -1 GB Unbuffered DIMM Density Infineon offers unbuffered modules Density Unbuffered DIMM 1 GB with densities of 128 MB, 256 MB, 512 MB, and 1 GB. 512 MB Unbuffered DIMM 256 MB Unbuffered DIMM 128 MB Unbuffered DIMM Speed The modules are available in the speeds PC 2700 and PC 3200. 2004 2005 Registered DIMM Density Density Infineon offers registered modules with densities of 256 MB, 512 MB, 2 GB FBGA package TSOP package 1 GB, and 2 GB. 1 GB Speed FBGA package TSOP package The modules are available in the speeds PC 2100, PC 2700, 512 MB FBGA package TSOP package and PC 3200. 256 MB 128 MB FBGA package TSOP package TSOP package 2004 2005 SO-DIMM Density Infineon offers SO-DIMM modules Density SO-DIMM 1 GB with densities of 128 MB, 256 MB, 512 MB, and 1 GB. Speed 512 MB SO-DIMM 256 MB SO-DIMM 128 MB SO-DIMM The modules are available in the speeds PC 2700 and PC 3200. 2004 2005 More detailed information on www.infineon.com/memory 11 Chip-Size Package FBGA Based Modules I N F I N E O N H A S D E V E L O P E D an inhouse technology for CSP. Its name is FBGA - BSP (Fine-pitch Ball Grid Array - Backside Protection) in BOC (Board on Chip) technology. Traditional wire bonding is used for the electrical connection. The BSP prevents a bare silicon backside which enables easier handling and better protection. The rigid substrate, together with BSP, allows package sizes to be clustered. As a result, die shrinks do not necessarily need a smaller package, and dies can be smaller than the ball-out - an important feature due to standardized ball-out. This technology is being applied to the following modules: 512 MB SDR SO-DIMMs 256 MB - 1 GB DDR registered, reduced-height DIMMs 512 MB - 1 GB DDR SO-DIMMs All DDR2 modules C O M P A R E D T O T O D A Y ' S T S O P package type, which is standard for SDR and DDR DRAMs, the new package type offers superior electrical and thermal performance, and also lower package volume and weight. The lower electrical parasitic values allow for faster memory speed which is a prerequisite for e.g. DDR2. Infineon's inhouse FBGA technology fully supports DDR2 requirements. For SDRAM, DDR, and DDR2 Infineon uses chip-size packages to achieve high-density modules. In addition, the small form factor of the chip-size packages supports the miniaturization of handhelds. FBGA: Roadmap packages: DDR2 FBGA TSOP: FBGA DDR TSOP 2004 2005 Footprint reduction: 256 M FBGA compared to TSOP Space reduced more than 63% Double density on same form factor 12 TSOP FBGA Stacked Die FBGA High Performance Memory T O A C H I E V E T H E H I G H E S T M E M O R Y density per module, Advantages Infineon has developed a dual-die FBGA. This technology provides two Same interconnect technology of identical memory dies inside one FBGA. Technology and design guarantee upper and lower chip high electrical and thermal performance of device and module, due to nearly Therefore both chips will have identical characteristics of the interconnect technology for both chips. The similar electrical parameters resulting package height is less than 1.35 mm and fits all DIMM height Package thickness of 1.35 mm standards. The package ballout (or pinout) is fully compatible to the max. fits to all DIMM height standards defined in JEDEC. Thanks to Infineon's small chip sizes, the standards, covers even SO-DIMM dual-die chip-size package has a very competing footprint, just a bit wider than the regular single-die package. The following modules are built up on this technology: DDR2 SD-FBGA ballout for 512 M / 1 G 2 GB DDR2 SO-DIMMs A 4 GB DDR2 registered DIMMs Schematic view of stacked die: Substrate Upper chip Lower chip NC NC 1 2 3 VDD NU/ /RDQS VSS NC 4 E A F B DQ6 VSSQ DM/ RDQS G C VDDQ DQ1 VDDQ H D DQ4 VSSQ J E VDDL VREF K F 5 3 depop rows 6 NC 7 8 9 VSSQ /DQS VDDQ DQS VSSQ DQ7 VDDQ DQ0 VDDQ DQ3 DQ2 VSSQ DQ5 VSS VSSDL CK VDD CKE0 /WE /RAS /CK ODT0 /CS1 L G BA2 BA0 BA1 /CAS /CSo M H CKE1 A10 A1 A2 A0 VDD N J VSS A3 A5 A6 A4 ODT1 P K A7 A9 A11 A8 VSS R L VDD A12 A14 A15 A13 NC NC W NC NC Ballout for 1 G Ball pitch: 0.8 x 0.8 mm Solder balls Ballout for 512 M Chip select - chip 1 I N S U M M A R Y , this innovative form of stacking provides unprecedented Chip select - chip 2 memory density per board area, and offers at the same time superior electrical Common balls for both chips and thermal properties of the resulting memory component. Support balls 13 GREEN Memory Products Playing a pioneering role in setting new standards Modules Eliminating lead in packages LEAD-FREE MODULES Reducing harmful substances based on "green" 256 Mb DDR Simplifying recycling components are already available; DDR modules with higher-density I N F I N E O N W A S O N E of the first semiconductor manufacturers in components (512 M) will follow. the world to announce the availability of "green" DRAM components. Infineon DDR2 modules only with green is currently pursuing a two-step strategy to introduce products with lower available. environmental impact. In step one, lead and halogens (components) and lead (PCBs) have been eliminated in 2003. In step two, halogens (PCBs) will also be substituted in 2005. Levels of other potentially hazardous chemical substances such as cadmium, hexavalent chrome, antimony oxide, etc., will also be dramatically reduced. Components T H E M A J O R I T Y O F I N F I N E O N memory components based on the 110 nm process are lead-free and halogen-free. TSOP packaged DDR (256 M / 512 M) components FBGA packaged DDR available on request FBGA packaged DDR2 available January 2003 January 2004 January 2005 Development Qualification package / product PCN (product change notification to market) Production Infineon schedule for Green transition 14 More Detailed Information on Memory Products is Available: On our Internet websites: www.infineon.com/memory C Datasheets Simulation models C Memory Spectrum (PDF version) C Brochures (PDF version) C Edition 2004 June Published by Infineon Technologies AG, St.-Martin-Strae 53, D-81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Please note The information in this document is subject to change without notice. The information herein describes certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide. (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 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