4-246
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF820 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 500 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID2.5
1.6 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 8.0 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 210 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 500 - - V
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 2.5 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 1.4A, VGS = 10V (Figures 8, 9) - 2.5 3.0 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.0A (Figure 12) 1.5 2.3 - S
Turn-On Delay Time td(ON) VDD = 250V, ID≈ 2.5A, RGS = 18Ω, RL = 96Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1115ns
Rise Time tr-1118ns
Turn-Off Delay Time td(OFF) -2942ns
Fall Time tf-1218ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
-1219nC
Gate to Source Charge Qgs - 2.5 - nC
Gate to Drain “Miller” Charge Qgd - 6.0 - nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 360 - pF
Output Capacitance COSS -60-pF
Reverse Transfer Capacitance CRSS -10-pF
Internal Drain Inductance LDMeasured From the
Contact Screw on Tab to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasuredFrom theSource
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC - - 2.5 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 80 oC/W
LS
LD
G
D
S
IRF820