SQJ910AEP
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S13-1727-Rev. A, 26-Aug-13 1Document Number: 63748
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Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () at VGS = 10 V 0.007
RDS(on) () at VGS = 4.5 V 0.0086
ID (A) per leg 30
Configuration Dual
4
3
2
1
6.15 mm
5.13 mm
Bottom View
PowerPAK® SO-8L Dual
G
2
S
2
G
1
S
1
D2
D1
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ910AEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrentaTC = 25 °C ID
30
A
TC = 125 °C 30
Continuous Source Current (Diode Conduction)aIS30
Pulsed Drain CurrentbIDM 120
Single Pulse Avalanche Current L = 0.1 mH IAS 29
Single Pulse Avalanche Energy EAS 42 mJ
Maximum Power DissipationbTC = 25 °C PD
48 W
TC = 125 °C 16
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature)e, f 260
THERMAL RESISIANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountcRthJA 85 °C/W
Junction-to-Case (Drain) RthJC 3.1
SQJ910AEP
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S13-1727-Rev. A, 26-Aug-13 2Document Number: 63748
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 30 V - - 1
μA VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150
On-State Drain Currenta I
D(on) V
GS = 10 V VDS5 V 30 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 12 A - 0.0058 0.007
VGS = 4.5 V ID = 10.7 A - 0.0072 0.0086
VGS = 10 V ID = 12 A, TJ = 125 °C - - 0.0096
VGS = 10 V ID = 12 A, TJ = 175 °C - - 0.012
Forward Transconductancebgfs VDS = 15 V, ID = 12 A - 72 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = 15 V, f = 1 MHz
- 1495 1869
pF Output Capacitance Coss - 313 391
Reverse Transfer Capacitance Crss - 126 158
Total Gate ChargecQg
VGS = 10 V VDS = 15 V, ID = 11.3 A
-25.839
nC Gate-Source ChargecQgs -4.3-
Gate-Drain ChargecQgd -4.3-
Gate Resistance Rgf = 1 MHz 0.6 1.38 2.10
Turn-On Delay Timectd(on)
VDD = 15 V, RL = 1.4
ID 1 A, VGEN = 10 V, Rg = 1
-1116
ns
Rise Timectr -34
Turn-Off Delay Timectd(off) -2740
Fall Timectf -711
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM --120A
Forward Voltage VSD IF = 7.8 A, VGS = 0 V - 0.77 1.2 V
SQJ910AEP
www.vishay.com Vishay Siliconix
S13-1727-Rev. A, 26-Aug-13 3Document Number: 63748
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
8
16
24
32
40
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
2
4
6
8
10
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = - 55 °C
TC = 125 °C
0.000
0.005
0.010
0.015
0.020
0.025
0 8 16 24 32 40
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
8
16
24
32
40
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
TC = 125 °C
TC = 25 °C
0
20
40
60
80
100
0 3 6 9 12 15
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 125 °C
T
C
= - 55
°
C
T
C
= 25
°
C
0
500
1000
1500
2000
2500
0 6 12 18 24 30
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
SQJ910AEP
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S13-1727-Rev. A, 26-Aug-13 4Document Number: 63748
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
Drain-Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
0
2
4
6
8
10
0 6 11 17 22 28
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
ID = 11.3 A
VDS = 15 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
I
D
= 11.3 A
V
GS
= 4.5 V
V
GS
= 10 V
30
32
34
36
38
40
- 50 - 25 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
ID = 1 mA
0.00
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
T
J
= 150
°
C
T
J
= 25
°
C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ - Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
SQJ910AEP
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S13-1727-Rev. A, 26-Aug-13 5Document Number: 63748
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by RDS
(
on
)
*
1 ms
I
DM
Limited
TC = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms, 1 s, 10 s, DC
I
D
Limited
10-310-21 10 60010-1
10-4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
SQJ910AEP
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S13-1727-Rev. A, 26-Aug-13 6Document Number: 63748
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63748.
10
-3 10
-2 10
-1
10
-4 1
2
1
0.1
0.01
0.2
0.1
0.05
Pulse
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single
Package Information
www.vishay.com Vishay Siliconix
Revision: 07-Sep-15 1Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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PowerPAK® SO-8L Case Outline
for Al Parts
Package Information
www.vishay.com Vishay Siliconix
Revision: 07-Sep-15 2Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q 0° - 10° 0° - 10°
ECN: C15-1203-Rev. A, 07-Sep-15
DWG: 6044
PAD Pattern
www.vishay.com Vishay Siliconix
Revision: 07-Feb-12 1Document Number: 63817
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RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
6.7500
(0.266)
5.1300
(0.202)
0.4700
(0.019)
0.5100
(0.020)
0.4100
(0.016)
1.2700
(0.050)
0.5000
(0.020)
3.0750
(0.121)
0.4100
(0.016)
0, 0
0.2550
(0.010)
0.7200
(0.028)
0.5850
(0.023)
6.1500
(0.242)
7.7500
(0.305)
2.5650
(0.101)
3.9900
(0.157)
1.9800
(0.078)
2.1100
(0.083)
0.9150
(0.036)
1.7300
(0.068)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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