DSEE55-24N1F V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 3 1200 V 60 A 40 ns 5 DSEE55-24N1F Backside: isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: i4-Pac Conditions rDCB isolated backside rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 1200 V 1 mA VR = 1200 V TVJ = 150 C 4 mA IF = TVJ = 25 C 2.45 V 2.90 V 60 A IF = TVJ = 150 C 60 A 1.56 V 2.00 V TC = 110C 60 A TVJ = 175C 0.97 V I F = 120 A I FAV average forward current threshold voltage rF slope resistance rectangular thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 6.8 m 0.60 K/W 175 C TC = 25 C 250 W TVJ = 45C 800 A -55 t = 10 ms (50 Hz), sine IF = t rr d = 0.5 for power loss calculation only R thJC Unit 1200 I F = 120 A VF0 max. TVJ = 25 C TVJ = 25 C 60 A; VR = 600 V -di F /dt = 600 A/s VR = 600 V; f = 1 MHz TVJ = 25 C 35 A TVJ = 100C 60 A TVJ = 25 C 75 ns TVJ = 100C 220 ns TVJ = 25 C 48 pF Data according to IEC 60747and per diode unless otherwise specified 20110215a DSEE55-24N1F Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.20 -55 Weight 150 9 FC mounting force with clip 20 VISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second t = 1 minute A K/W C g 120 N 3600 V 3000 V 5.5 mm 5.1 mm Product Marking Logo IXYS Part No. UL listed Date Code Ordering Standard Part Name DSEE55-24N1F IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product DSEE55-24N1F Delivering Mode Tube Base Qty Code Key 24 488739 Data according to IEC 60747and per diode unless otherwise specified 20110215a DSEE55-24N1F Outlines i4-Pac A2 E1 D3 L1 D L D1 R Q E D2 A 1 3 c 5 A1 W IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 2x e 2x b2 3x b b4 Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 7.62 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.300 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm uber der Kunststoffoberflache der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side Data according to IEC 60747and per diode unless otherwise specified 20110215a DSEE55-24N1F 100 15.0 10.0 100C 25C IF VR = 800 V IF = 120 A TVJ = 150C 60 TVJ = 125C VR = 800 V 12.5 80 120 TVJ = 125C 80 Qr 7.5 40 60 A 30 A [nC] [A] 5.0 [A] 20 60 A 30 A IRM IF = 120 A 40 2.5 0 0 1 2 0.0 100 3 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF vs. VF 600 800 1000 -diF /dt [A/s] Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 2.0 400 300 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 60 1.2 TVJ = 125C TVJ = 125C IF = 60 A VR = 800 V 280 1.5 40 trr 260 Kf 1.0 VFR tfr 60 A 30 A [V] [s] [ns] 240 20 IRM 0.5 0.8 IF = 120 A tfr 0.4 220 Qr VFR 0.0 200 0 40 80 120 160 0 0 200 TVJ [C] 400 600 800 1000 0 200 -diF /dt [A/s] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltageVFR and typ. forward recovery time tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 100 Constants for ZthJC calculation: ZthJC i 10-1 [K/W] 10-2 10-3 10-2 10-1 100 Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 101 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110215a