DSEE55-24N1F
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
800
IA
V
F
2.45
R0.60 K/W
V
R
=
1 3 5
min.
60
t = 10 ms
Applications:
V
RRM
V1200
1T
VJ
V°C=
T
VJ
°C=mA4
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=110°C
d =
P
tot
250 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=1200
60
60
T
VJ
=45°C
DSEE55-24N1F
V
A
1200
V1200
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
2.90
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V0.97T
VJ
=175°C
r
F
6.8
f = 1 MHz = °C25
mΩ
V1.56T
VJ
=°C
I
F
=A
V
60
2.00
I
F
=A120
I
F
=A120
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
35 A
T
VJ
=°C
reverse recovery time
A60
75
220
ns
(50 Hz), sine
t
rr
=40 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
i4-Pac
●
rDCB isolated backside
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;60
25
T=100°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V600
T
VJ
=°C25
T=100°C
VJ
mA
48600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEE55-24N1F
5.5
5.1
I
RMS
A
per terminal 70
R
thCH
K/W0.20
T
stg
°C150
storage temperature -55
Weight g9
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSEE55-24N1F 488739Tube 24
IXYS
Date Code
Part No.
Logo
UL listed
Product Mar
k
in
Marking on Product
DSEE55-24N1F
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
d
Spp/App
mm
mm
creepage | striking distance on surface | through air terminal to terminal
d
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEE55-24N1F
b4
2x e
E
W
A
A2
A1
c2x b2
3x b
E1
D1
D2
L1
LD
R
Q
153
D3
Die kon
v
exe
F
o
r
mdesSubst
r
ates ist t
y
p.
<
0
.05 mm übe
r
der Kun ststoffob erfläc he der Bauteilunterseite
The co nvexbow of substrate is ty p. < 0.05 mmover plastic
surface level ofdevice bottomside
minmaxminmax
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110
c 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
D3 20.30 20.70 0.799 0.815
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e 7.62 BSC 0.300 BSC
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R2.54 4.57 0.100 0.180
W-0.10 -0.004
Dim. Millimeter Inches
Outlines i4-Pac
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEE55-24N1F
200 600 10000 400 800
200
220
240
260
280
300
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
0.0
0.4
0.8
1.2
200 600 10000 400 800
0
40
80
120
0001001
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0123
0
20
40
60
80
100
V
FR
t
fr
I
RM
Q
r
I
F
[A]
V
F
[V]
Q
r
[nC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs]
K
f
T
VJ
[°C]
t
rr
[ns]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
[V]
t[s]
Z
thJC
[K/W]
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltageV
FR
and typ. forward recovery time
t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
T
VJ
= 150°C
100°C
25°C I
F
=120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
t
fr
[µs]
T
VJ
=125°C
V
R
= 800 V
T
VJ
=125°C
V
R
= 800 V
T
VJ
= 125°C
V
R
= 800 V
T
VJ
=125°C
I
F
= 60 A
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved