FAN7371MX - ON SEMICONDUCTOR

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FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2

November 2009

FAN7371

High-Current High-Side Gate Drive IC

Features

!Floating Channel for Bootstrap Operation to +600V

!4A/4A Sourcing/Sinking Current Driving Capability

!Common-Mode dv/dt Noise Canceling Circuit

!3.3V and 5V Input Logic Compatible

!Output In-phase with Input Signal

!Under- Voltage Lockout for VBS

!25V Shunt Regulator on VDD and VBS

!8-Lead Small Outline Package (SOP)

Applications

!High-Speed Gate Driver

!Sustaine Switch Driver in PDP Application

!Energy-Recovery Circuit Switch Driver in

PDP Application

!High-Power Buck Converter

!Motor Drive Inverter

Description

The FAN7371 is a monolithic high-side gate drive IC,

which can drive high-speed MOSFETs and IGBTs that

operate up to +600V. It has a buffered output stage with

all NMOS transistors designed for high pulse current

driving capability and minimum cross-conduction.

Fairchild’s high-voltage process and common-mode

noise canceling techniques provide stable operation of

the high-side driver under high dv/dt noise circum-

stances. An advanced level-shift circuit offers high-side

gate driver operation up to VS=-9.8V (typical) for

VBS=15V.

The UVLO circuit prevents malfunction when VBS is

lower than the specified threshold voltage.

The high-current and low-output voltage drop feature

makes this device suitable for sustaine switch driver and

energy recovery switch driver in the Plasma Display

Panel application, motor drive inverter, switching power

supply, and high-power DC-DC converter applications.

Ordering Information

Note:

1. These devices passed wave soldering test by JESD22A-111.

For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

8-SOP

Part Number Package Operating

Temperature Range Eco Status Packing Method

FAN7371M(1)

8-SOP -40°C ~ 125°C RoHS Tube

FAN7371MX(1) Tape & Reel

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 2

Typical Application Diagrams

Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application

Figure 2. Step-Down (Buck) DC-DC Converter Application

Energy Recovery Circuit Part Sustain Drive Part

DBOOT1

IN1

To Pannel

DBOOT2

CBOOT1

IN2

15V

RBOOT1

CBOOT2

VS DBOOT3

IN3

RBOOT3

CBOOT3

15V

IN4

C1 C3

FAN7371

GND

VDD

FAN7371

GND

VDD

FAN7371

GND

VDD

FAN7371

GND

VDD

FAN7371 Rev.03

DBOOT

PWM

CBOOT

15V

RBOOT

FAN7371

GND

VDD

VIN

VOUT

FAN7371 Rev.01

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 3

Internal Block Diagram

Figure 3. Functional Block Diagram

Pin Configuration

Figure 4. Pin Configuration (Top View)

Pin Definitions

Pin # Name Description

DD Supply Voltage

2 IN Logic Input for High-Side Gate Driver Output

3 NC No Connection

4 GND Ground

5 NC No Connection

SHigh-Voltage Floating Supply Return

7 HO High-Side Driver Output

BHigh-Side Floating Supply

UVLO

PULSE

GENERATOR

VDD

GND

2NOISE

CANCELLER

Pins 3 and 5 are no connection.

25V

FAN7371 Rev.04

25V

110K

VDD

Shoot-through current

compensated gate driver

FAN7371

VDD

IN HO

4GND

FAN7371 Rev.01

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 4

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.

Notes:

2 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this

supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the

Electrical Characteristics section

3 Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).

4 Refer to the following standards:

JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and

JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.

5 Do not exceed power dissipation (PD) under any circumstances.

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended

operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not

recommend exceeding them or designing to absolute maximum ratings.

Symbol Characteristics Min. Max. Unit

VSHigh-Side Floating Offset Voltage VB-VSHUNT VB+0.3 V

VBHigh-Side Floating Supply Voltage(2) -0.3 625.0 V

VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V

VDD Low-Side and Logic Supply Voltage(2) -0.3 VSHUNT V

VIN Logic Input Voltage -0.3 VDD+0.3 V

dVS/dt Allowable Offset Voltage Slew Rate ± 50 V/ns

PDPower Dissipation(3, 4, 5) 0.625 W

θJA Thermal Resistance 200 °C/W

TJJunction Temperature -55 +150 °C

TSTG Storage Temperature -55 +150 °C

TAOperating Ambient Temperature -40 +125 °C

Symbol Parameter Min. Max. Unit

VBS High-Side Floating Supply Voltage VS+10 VS+20 V

VSHigh-Side Floating Supply Offset Voltage 6-VDD 600 V

VHO High-Side Output Voltage VSVBV

VIN Logic Input Voltage GND VDD V

VDD Supply Voltage 10 20 V

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 5

Electrical Characteristics

VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.

The VO and IO parameters are relative to VS and are applicable to the respective output HO.

Note:

6 These parameters guaranteed by design.

Dynamic Electrical Characteristics

VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified.

Symbol Characteristics Test Condition Min. Typ. Max. Unit

POWER SUPPLY SECTION

IQDD Quiescent VDD Supply Current VIN=0V or 5V 25 70 μA

IPDD Operating VDD Supply Current fIN=20KHz, No Load 35 100 μA

BOOTSTRAPPED SUPPLY SECTION

VBSUV+

VBS Supply Under-Voltage Positive Going

Threshold Voltage VBS=Sweep 8.2 9.2 10.2 V

VBSUV-

VBS Supply Under-Voltage Negative Going

Threshold Voltage VBS=Sweep 7.5 8.5 9.5 V

VBSHYS

VBS Supply Under-Voltage Lockout

Hysteresis Voltage VBS=Sweep 0.7 V

ILK Offset Supply Leakage Current VB=VS=600V 10 μA

IQBS Quiescent VBS Supply Current VIN=0V or 5V 60 120 μA

IPBS Operating VBS Supply Current CLOAD=1nF, fIN=20KHz, rms

Value 1.0 2.8 mA

SHUNT REGULATOR SECTION

VSHUNT

VDD and VBS Shunt Regulator Clamping

Voltage ISHUNT=5mA 24 25 V

INPUT LOGIC SECTION

VIH Logic “1” Input Voltage 2.5 V

VIL Logic “0” Input Voltage 0.8 V

IIN+ Logic Input High Bias Current VIN=5V 45 70 μA

IIN- Logic Input Low Bias Current VIN=0V 2μA

RIN Input Pull-down Resistance 70 110 KΩ

GATE DRIVER OUTPUT SECTION

VOH High Level Output Voltage (VBIAS - VO)No Load 1.2 V

VOL Low Level Output Voltage No Load 30 mV

IO+ Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW ≤10µs 3.0 4.0 A

IO- Output Low, Short-Circuit Pulsed Current(6) VHO=15V,VIN=0V, PW ≤10µs 3.0 4.0 A

Allowable Negative VS pin Voltage for IN

Signal Propagation to HO -9.8 -7.0 V

Symbol Parameter Conditions Min. Typ. Max. Unit

ton Turn-on Propagation Delay Time VS=0V 150 210 ns

toff Turn-off Propagation Delay Time VS=0V 150 210 ns

trTurn-on Rise Time 25 50 ns

tfTurn-off Fall Time 15 40 ns

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 6

Typical Characteristics

Figure 5. Turn-on Propagation Delay

vs. Temperature

Figure 6. Turn-off Propagation Delay

vs. Temperature

Figure 7. Turn-on Rise Time vs. Temperature Figure 8. Turn-off Fall Time vs. Temperature

Figure 9. Operating VDD Supply Current

vs. Temperature

Figure 10. Operating VBS Supply Current

vs. Temperature

-40-20 0 20406080100120

100

150

200

250

tON [ns]

Temperature [°C]

-40-20 0 20406080100120

100

150

200

250

tOFF [ns]

Temperature [°C]

-40 -20 0 20 40 60 80 100 120

tR [ns]

Temperature [°C]

-40-20 0 20406080100120

tF [ns]

Temperature [°C]

-40-20 0 20406080100120

100

IPDD [μA]

Temperature [°C]

-40-20 0 20406080100120

0.0

0.5

1.0

1.5

2.0

IPBS [mA]

Temperature [°C]

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 7

Typical Characteristics (Continued)

Figure 11. VBS UVLO+ vs. Temperature Figure 12. VBS UVLO- vs. Temperature

Figure 13. Logic High Input Voltage vs. Temperature Figure 14. Logic Low Input Voltage vs. Temperature

Figure 15. Input Pull-Down Resistance

vs.Temperature.

Figure 16. High-Level Output Voltage

vs. Temperature

-40 -20 0 20 40 60 80 100 120

8.0

8.5

9.0

9.5

10.0

VBSUV+ [V]

Temperature [°C]

-40-20 0 20406080100120

7.5

8.0

8.5

9.0

9.5

VBSUV- [V]

Temperature [°C]

-40 -20 0 20 40 60 80 100 120

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VIH [V]

Temperature [°C]

-40-20 0 20406080100120

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VIL [V]

Temperature [°C]

-40-20 0 20406080100120

120

160

200

240

280

RIN [kΩ]

Temperature [°C]

-40 -20 0 20 40 60 80 100 120

0.00

0.25

0.50

0.75

1.00

1.25

1.50

VOH [V]

Temperature [°C]

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 8

Typical Characteristics (Continued)

Figure 17. Output High, Short-Circuit Pulsed Current

vs. Temperature

Figure 18. Output Low, Short-Circuit Pulsed Current

vs. Temperature

Figure 19. Output High, Short-Circuit Pulsed Current

vs. Supply Voltage

Figure 20. Output Low, Short-Circuit Pulsed Current

vs. Supply Voltage

Figure 21. Quiescent VDD Supply Current

vs. Supply Voltage

Figure 22. Quiescent VBS Supply Current

vs. Supply Voltage

-40 -20 0 20 40 60 80 100 120

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

IO+ [A]

Temperature [°C]

-40-20 0 20406080100120

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

IO- [A]

Temperature [°C]

10 12 14 16 18 20

IO+ [A]

VBS [V]

10 12 14 16 18 20

IO- [A]

VBS [V]

10 12 14 16 18 20

25°C

-40°C

IQDD [μA]

Supply Voltage [V]

125°C

10 12 14 16 18 20

100

120

25°C

-40°C

IQBS [μA]

Supply Voltage [V]

125°C

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 9

Switching Time Definitions

Timing Diagram

Figure 23. Switching Time Test Circuit and Waveform Definitions

0.1µF

VB15V

10µF

1000pF

OUT

50%

90%

50%

ton

10%

trtoff tf

10%

90%

FAN7371

(A) (B)

10nF

15V

10µF

VDD

GND

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 10

Physical Dimensions

Figure 24. 8-Lead Small Outline Package (SOP)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,

specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

8°

0°

SEE DETAIL A

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE CONFORMS TO JEDEC

MS-012, VARIATION AA, ISSUE C,

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS DO NOT INCLUDE MOLD

FLASH OR BURRS.

D) LANDPATTERN STANDARD: SOIC127P600X175-8M.

E) DRAWING FILENAME: M08AREV13

LAND PATTERN RECOMMENDATION

SEATING PLANE

0.10 C

GAGE PLANE

x 45°

DETAIL A

SCALE: 2:1

PIN ONE

INDICATOR

MBA0.25

5.60

0.65

1.75

1.27

6.20

5.80

3.81

4.00

3.80

5.00

4.80

(0.33)

1.27

0.51

0.33

0.25

0.10

1.75 MAX

0.25

0.19

0.36

0.50

0.25

R0.10

0.90

0.406 (1.04)

OPTION A - BEVEL EDGE

OPTION B - NO BEVEL EDGE

FAN7371 — High-Current High-Side Gate Drive IC

FAN7371 Rev. 1.0.2 12

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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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