HAT2220R Silicon N Channel MOS FET High Speed Power Switching REJ03G1572-0500 Rev.5.00 Jul 20, 2007 Features * Low on-resistance * Low drive current * High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 5 6 D D 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 MOS1 Source Gate Drain S3 MOS2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. 5. Symbol VDSS VGSS Note1 ID Note2 ID(pulse) IDR IAP Note3 Pch Note4 Pch Note5 Tch Tstg Ratings 450 30 0.7 2.1 0.7 0.7 2 3 150 -55 to +150 PW 1 s PW 10 s, duty cycle 1% STch = 25 C, Tch 150 C 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s REJ03G1572-0500 Rev.5.00 Jul 20, 2007 Page 1 of 3 Unit V V A A A A W W C C HAT2220R Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 450 -- -- 3.0 0.55 -- Typ -- -- -- -- 0.95 5.5 Max -- 1 0.1 4.5 -- 6.5 Unit V A A V S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- 140 17 5 22 12 38 47 4.9 0.6 3.2 -- -- -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns nC nC nC VDF -- -- 0.84 120 1.24 -- V ns trr Test Conditions ID = 10 mA, VGS = 0 VDS = 450 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.4 A, VDS = 10 V Note6 ID = 0.4 A, VGS = 10 V Note6 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.4 A VGS = 10 V RL = 562 Rg = 10 VDD = 360 V VGS = 10 V ID = 0.7 A IF = 0.7 A, VGS = 0 Note6 IF = 0.7 A, VGS = 0 diF/dt = 100 A/ s Notes: 6. Pulse test 7. Since this device includes two high voltage Power MOS FET chips (VDSS 450 V), high voltage margin may occur. (Between No.6 pin and No.7 pin in the outline fig.) Therefore, please be sure to confirm about Electric discharge between No.6 pin and No.7 pin in the equivalent circuit. REJ03G1572-0500 Rev.5.00 Jul 20, 2007 Page 2 of 3 HAT2220R Package Dimensions JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min D E A2 A1 A bp b1 c c1 A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part No. HAT2220R-EL-E Quantity 2500 pcs REJ03G1572-0500 Rev.5.00 Jul 20, 2007 Page 3 of 3 Shipping Container Taping Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. 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