Bulletin I27258 10/06 IRKCS403/100P SCHOTTKY RECTIFIER 440 Amp Description/ Features (1) The IRKCS403.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. + (2) 175C TJ operation Low forward voltage drop High frequency operation (3) Guard ring for enhanced ruggedness and long term reliability UL pending TOTALLY LEAD-FREE, RoHS Compliant Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 400 A VRRM 100 V 25500 A 0.8 V - 55 to 175 C waveform IFSM @ tp = 5 s sine VF @ 200Apk, TJ=125C TJ range www.irf.com Outline TO-240AA 1 IRKCS403/100P Bulletin I27258 10/06 Voltage Ratings Parameters VR IRKCS403/100P Max. DC Reverse Voltage (V) 100 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Values Units Per Module Current IFSM 400 Per Leg Conditions A 50% duty cycle @ TC = 107 C, rectangular wave form A 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 200 Max. Peak One Cycle Non-Repetitive 25500 Surge Current 3300 EAS Non-Repetitive Avalanche Energy 15 mJ IAR Repetitive Avalanche Current 1 A TJ = 25 C, IAS = 5.5 Amps, L = 1mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM IRM Values Units Max. Forward Voltage Drop (1) Max. Reverse Leakage Current (1) Conditions 0.93 1.24 0.8 V V V @ 200A @ 400A @ 200A 1.05 V @ 400A 6 mA TJ = 25 C 80 mA TJ = 125 C TJ = 25 C TJ = 125 C VR = rated VR CT Max. Junction Capacitance 5500 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25C LS Typical Series Inductance 5.0 nH From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change VINS 10000 RMS isolation voltage (1 sec) 3500 V/ s (Rated VR) V 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 500s Thermal-Mechanical Specifications Parameters Values Units TJ Max. Junction Temperature Range -55 to 175 Tstg Max. Storage Temperature Range -55 to 175 Conditions C C RthJC Max. Thermal Resistance, Junction to Case (Per Leg) 0.30 C/W DC operation RthCS Max. Thermal Resistance, case to Heatsink 0.1 C/W Mounting Surface, smooth and greased wt T Approximate Weight Mounting Torque 10% Case Style 2 to heatsink busbar 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC www.irf.com IRKCS403/100P Bulletin I27258 10/06 1000 Reverse Current - IR (mA) 1000 100 150C 100 125C 10 100C 1 75C 50C .1 25C .01 .001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10000 10 Tj = 25C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175C T =175C J Tj = 125C Tj = 25C 1 1000 0.0 0.5 1.0 1.5 2.0 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 0 10 20 30 40 50 60 70 80 90 100 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (C/W) 1 D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 0.001 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 1E+01 Fig. 4 - Max. Thermal Impedance ZthJC Characteristics www.irf.com 3 IRKCS403/100P Bulletin I27258 10/06 250 RMS limit Square wave (D=0.50) 80% rated Vr applied 160 140 Average Power Loss - (Watts) Allowable Case Temperature (C) 180 120 DC 100 80 60 40 see note (2) 20 0 180 120 90 60 30 200 150 DC 100 50 0 0 100 200 300 400 500 0 600 50 Average Forward Current - IF(AV) (A) 150 200 250 300 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 100 Fig. 6 - Forward Power Loss Characteristics 100000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge 10000 1000 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L IRFP460 DUT Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKCS403/100P Bulletin I27258 10/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR KC S 40 3 1 2 3 4 5 / 100 P 6 7 1 - International Rectifier 2 - Circuit Configuration 3 - S = Schottky Diode 4 - Average Rating (x10) 5 - Product Silicon Identification 6 - Voltage Rating (100 = 100V) 7 - Lead-Free KC = Add-A-Pak - 2 diodes/common cathode www.irf.com 5 IRKCS403/100P Bulletin I27258 10/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/06 6 www.irf.com