BFQ67 - NXP SEMICONDUCTORS

DATA SH EET

Product specification

Supersedes data of September 1995 1998 Aug 27

DISCRETE SEMICONDUCTORS

BFQ67

NPN 8 GHz wideband transistor

book, halfpage

M3D088

1998 Aug 27 2

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

FEATURES

High power gain

Low noise figure

High transition frequency

Gold metallization ensures

excellent reliability.

APPLICATIONS

Satellite TV tuners and RF portable

communications equipment up to

2GHz.

DESCRIPTION

Silicon NPN wideband transistor in a

plastic SOT23 package.

PINNING

PIN DESCRIPTION

1base

2 emitter

3 collector

Fig.1 SOT23.

alfpage

MSB003

Top view

Marking code: V2p.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the sold ering point of the collector tab.

LIMITING VALUES

In accordance with the Absolute Maximum Ra ting System (I EC 134).

Note

1. Ts is the temperature at the sold ering point of the collector tab.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base vo ltage open emitter 20 V

VCEO collector-emitter voltage open base 10 V

ICcollector current (DC) 50 mA

Ptot total power dissipation Ts97 C; note 1 300 mW

hFE DC current gain IC=15mA; V

CE =5V 60 100 

fTtransition frequency IC=15mA; V

CE =8V 8GHz

GUM maximum unilateral

power gain IC=15mA; V

CE =8V; f=1GHz 14 dB

F noise figure IC=5mA; V

CE =8V; f=1GHz 1.3 dB

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter 20 V

VCEO collector-emitter voltage open base 10 V

VEBO emitter-base voltage open collector 2.5 V

ICcollector current (DC) 50 mA

Ptot total power dissipation Ts97 C; note 1 300 mW

Tstg storage temperature range 65 +150 C

Tjjunction temperature 175 C

1998 Aug 27 3

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

THERMAL CHARACTE RISTI CS

Note

1. Ts is the temperature at the soldering point of the collecto r lead.

CHARACTERISTICS

Tj=25C unless otherwise specified.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and .

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point note 1 260 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collecto r cut-off current IE=0; V

CB =5V 50 nA

hFE DC current ga in IC=15mA; V

CE =5V 60 100 

Cccollector capacitance IE=i

e=0; V

CB =8V; f=1MHz 0.7 pF

Ceemitter capacitance IC=i

c=0; V

EB =0.5V; f=1MHz 1.3 pF

Cre feedback capacitance IC=0; V

CB =8V; f=1MHz 0.5 pF

fTtransition fr eq uency IC=15mA; V

CE =8V 8GHz

GUM maximum unilater al power gain

(note 1) IC=15mA; V

CE =8V;

Tamb =25C; f = 1 GHz 14 dB

IC=15mA; V

CE =8V; f=2GHz 8dB

F noise figure s=opt; IC=5mA; V

CE =8V;

Tamb =25C; f = 1 GHz 1.3 dB

s=opt; IC=15mA; V

CE =8V;

Tamb =25C; f = 1 GHz 1.7 dB

s=opt; IC=5mA; V

CE =8V;

Tamb =25C; f = 2 GHz 2.2 dB

IC=5mA; V

CE =8V;

Tamb =25C; f = 2 GHz; Zs=60

2.5 dB

s=opt; IC=15mA; V

CE =8V;

Tamb =25C; f = 2 GHz 2.7 dB

IC=15mA; V

CE =8V;

Tamb =25C; f = 2 GHz; Zs=60

3dB

GUM 10 log S21 2

1S11 2

–1S22 2

–

---------------------------------------------------------- dB=

1998 Aug 27 4

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

150

MRA614

Ptot

(mW)

Ts (oC)

Fig.3 DC current gain as a fu nc tion of collector

current, ty pical values.

VCE =5V.

handbook, halfpage

120

020 40

MBB301

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage, typical valu es.

IC=i

c=0; f=1MHz.

handbook, halfpage

0 5 10 15

VCB (V)

Cre

(pF)

0.8

0.6

0.2

0.4

MRA607

Fig.5 Transition frequency as a function of

collector current, typical values.

VCE =8V; T

amb =25C; f = 2 GHz.

handbook, halfpage

01020 40

MBB303

30 I (mA)

(GHz)

f10

1998 Aug 27 5

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

Fig.6 Gain as a function o f c ollec t or current,

typical values.

VCE =8 V; f=1GHz.

handbook, halfpage

010 IC (mA)

20 30

gain

(dB)

MRA611

MSG

GUM

Gmax

Fig.7 Gain as a function o f freq uency, typical

values.

VCE =8V; I

C=5mA.

handbook, halfpage

gain

(dB)

010

MRA610

102103104

f (MHz)

MSG

GUM

Gmax

Fig.8 Gain as a function o f freq uency, typical

values.

VCE =8V; I

C=15mA.

handbook, halfpage

gain

(dB)

010

MRA608

102103104

f (MHz)

Gmax

GUM

MSG

Fig.9 Gain as a function o f freq uency, typical

values.

VCE =8V; I

C=30mA.

handbook, halfpage

gain

(dB)

010

MRA609

102103104

f (MHz)

Gmax

GUM

MSG

1998 Aug 27 6

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

Fig.10 Minimum noise figure as a function of

collector current, typical values.

VCE =8V.

handbook, halfpage

0100

MBB308

101

(dB)

I (mA)

f = 2 GHz

1 GHz

900 MHz

500 MHz

Fig.11 Noise figure as a function of collector

current, ty pical values.

VCE =6V; f=900MHz.

handbook, halfpage

(dB)

IC (mA)

MRA613

1102

optimum

source

ZS = 60 Ω

Fig.12 Minimum noise figure as a function of

frequency, typical values.

VCE =8V.

handbook, halfpage

MBB309

(dB)

f (MHz) 104

103

102

5 mA

I = 30 mA

15 mA

Fig.13 Minimum noise figure as a function of

frequency, typical values.

VCE =1V.

handbook, halfpage

(dB)

f (MHz)

MRA612

IC = 0.5 mA

1 mA

2 mA

1998 Aug 27 7

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

handbook, full pagewidth

MBC968

0.2

0.5

∞

0.2

0.5

+ j

− j

3 GHz

40 MHz

10.2 5210

Fig.14 Common emitter input reflection coefficient (S11), typical values.

VCE =8V; I

C=15mA; Z

o=50.

Fig.15 Common emitter forward transmission coeffici ent (S21), typical values.

VCE =8V; I

C=15mA.

handbook, full pagewidth

MBC967

+ ϕ

− ϕ

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

0.2 0.1 3 GHz

40 MHz

1998 Aug 27 8

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

Fig.16 Common emitter reverse transmission coefficient (S 12), typical values.

VCE =8V; I

C=15mA.

handbook, full pagewidth

MBC966

+ ϕ

− ϕ

0°

30o

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

0.2 0.1

3 GHz

40 MHz

Fig.17 Common emitter output reflection coefficient (S22), typical values.

VCE =8V; I

C=15mA; Z

o=50.

handbook, full pagewidth

MBC965

0.2

0.5

∞

0.2

0.5

+ j

− j 3 GHz

0.2 0.5 1 1052

40 MHz

1998 Aug 27 9

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

1998 Aug 27 10

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completin g a d esign.

2. The product status of device(s) described in this documen t may have changed since this document wa s published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the product specification.

DEFINITIONS

Product specification  The information and da ta

provided in a Product data she et shall define the

specification of the product as agreed between NXP

Semiconductors and its custo m er, unless NXP

Semiconductors and cus to mer have explicitly agreed

otherwise in writing. In no event however, shall an

agreement be valid in which th e NXP Semiconductors

product is deemed to offer functions and qualities beyond

those described in the Product data sheet.

DISCLAIMERS

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However, NXP Semiconduc tors does not give any

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the accuracy or completeness of such information and

shall have no liability for the consequences of use of such

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any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

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specified use without further testing or modification.

Customers are responsible for the design and operation of

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Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or

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party customer(s). Customers should provide appropriate

design and opera ting safeguards to minimize the risks

associated with their ap plications and pr oducts.

1998 Aug 27 11

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

NXP Semiconductors does not accept any liability related

to any default, damage, cost s or problem which is based

on any weakness or default in the customer’s applications

or products, or the applic ation or use by customer’s third

party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and

products using NXP Semic on ductors products in order to

avoid a default of the app lications and the products or of

the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this

respect.

Limiting values  Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ra tings only and

(proper) operat ion of the device at these or any other

conditions above those given in the Recommende d

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the qua l ity and

reliability of the device.

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Semiconductors products are sold subject to the genera l

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extract of th e product data given in the Li miting values and

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In the event that customer uses the product for design-in

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Semiconductors’ product specifications.

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R77/04/pp12 Date of release: 1998 Aug 27