MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1G series, two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium. SC-88 / SOT-363 CASE 419B STYLE 1 (3) R1 Features * * * * * (2) Q1 Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* (4) R1 (5) (6) MARKING DIAGRAM 6 xx M G G (TA = 25C unless otherwise noted, common for Q1 and Q2) Symbol Value Unit Collector-Base Voltage VCBO -50 Vdc Collector-Emitter Voltage VCEO -50 Vdc IC -100 mAdc Collector Current R2 Q2 R2 MAXIMUM RATINGS Rating (1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 xx M G = Device Code (Refer to page 2) = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 11 1 Publication Order Number: MUN5111DW1T1/D MUN5111DW1T1G Series, SMUN5111DW1T1G Series THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Total Device Dissipation TA = 25C PD Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Max Unit 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/C RqJA 670 (Note 1) 490 (Note 2) C/W Symbol Max Unit 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW PD Derate above 25C mW/C Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad ORDERING INFORMATION, DEVICE MARKINGS AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping MUN5111DW1T1G, SMUN5111DW1T1G SOT-363 (Pb-Free) 0A 10 10 3,000/Tape & Reel MUN5112DW1T1G, SMUN5112DW1T1G SOT-363 (Pb-Free) 0B 22 22 3,000/Tape & Reel MUN5113DW1T1G, SMUN5113DW1T1G SOT-363 (Pb-Free) 0C 47 47 3,000/Tape & Reel MUN5114DW1T1G, SMUN5114DW1T1G SOT-363 (Pb-Free) 0D 10 47 3,000/Tape & Reel MUN5115DW1T1G, SMUN5115DW1T1G SOT-363 (Pb-Free) 0E 10 3,000/Tape & Reel MUN5116DW1T1G, SMUN5116DW1T1G SOT-363 (Pb-Free) 0F 4.7 3,000/Tape & Reel MUN5130DW1T1G SOT-363 (Pb-Free) 0G 1.0 1.0 3,000/Tape & Reel MUN5131DW1T1G, SMUN5131DW1T1G SOT-363 (Pb-Free) 0H 2.2 2.2 3,000/Tape & Reel MUN5132DW1T1G SOT-363 (Pb-Free) 0J 4.7 4.7 3,000/Tape & Reel MUN5133DW1T1G SOT-363 (Pb-Free) 0K 4.7 47 3,000/Tape & Reel MUN5134DW1T1G SOT-363 (Pb-Free) 0L 22 47 3,000/Tape & Reel MUN5135DW1T1G SOT-363 (Pb-Free) 0M 2.2 47 3,000/Tape & Reel MUN5136DW1T1G SOT-363 (Pb-Free) 0N 100 100 3,000/Tape & Reel MUN5137DW1T1G SOT-363 (Pb-Free) 0P 47 22 3,000/Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5111DW1T1G Series, SMUN5111DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = -50 V, IE = 0) ICBO - - -100 nAdc Collector-Emitter Cutoff Current (VCE = -50 V, IB = 0) ICEO - - -500 nAdc Emitter-Base Cutoff Current (VEB = -6.0 V, IC = 0) MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5113DW1T1G, SMUN5113DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G IEBO OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = -10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 3) (IC = -2.0 mA, IB = 0) V(BR)CEO mAdc - - - - - - - - - - - - - - - - - - - - - - - - - - - - -0.5 -0.2 -0.1 -0.2 -0.9 -1.9 -4.3 -2.3 -1.5 -0.18 -0.13 -0.2 -0.05 -0.13 -50 - - -50 - - Vdc Vdc ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.3 mA) MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5113DW1T1G, SMUN5113DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5135DW1T1G MUN5136DW1T1G (IC = -10 mA, IB = -5 mA) MUN5130DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5137DW1T1G (IC = -10 mA, IB = -1 mA) MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G VCE(sat) DC Current Gain (VCE = -10 V, IC = -5.0 mA) MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5113DW1T1G, SMUN5113DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G hFE 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc - - - - - - - - - - - - -0.25 -0.25 -0.25 -0.25 -0.25 -0.25 - - - - - - -0.25 -0.25 -0.25 - - - - - - - - - - -0.25 -0.25 -0.25 -0.25 -0.25 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 - - - - - - - - - - - - - - MUN5111DW1T1G Series, SMUN5111DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4) (Continued) Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kW) MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G (VCC = -5.0 V, VB = -3.5 V, RL = 1.0 kW) MUN5113DW1T1G, SMUN5113DW1T1G (VCC = -5.0 V, VB = -5.5 V, RL = 1.0 kW) MUN5136DW1T1G (VCC = -5.0 V, VB = -4.0 V, RL = 1.0 kW) MUN5137DW1T1G VOL Output Voltage (off) (VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kW) MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5113DW1T1G, SMUN5113DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G (VCC = -5.0 V, VB = -0.05 V, RL = 1.0 kW) MUN5130DW1T1G (VCC = -5.0 V, VB = - 0.25 V, RL = 1.0 kW) MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5132DW1T1G MUN5137DW1T1G VOH Input Resistor MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5113DW1T1G, SMUN5113DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G R1 Resistor Ratio MUN5111DW1T1G, SMUN5111DW1T1G MUN5112DW1T1G, SMUN5112DW1T1G MUN5113DW1T1G, SMUN5113DW1T1G MUN5114DW1T1G, SMUN5114DW1T1G MUN5115DW1T1G, SMUN5115DW1T1G MUN5116DW1T1G, SMUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G, SMUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 Vdc - - - - - - - - - - - - - - - - - - - - - - -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 - - -0.2 - - -0.2 - - -0.2 Vdc -4.9 -4.9 -4.9 -4.9 -4.9 -4.9 -4.9 -4.9 - - - - - - - - - - - - - - - - -4.9 - - -4.9 -4.9 -4.9 -4.9 -4.9 - - - - - - - - - - 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 0.8 0.8 0.17 - - 0.8 0.8 0.8 0.055 0.38 0.038 0.8 1.7 1.0 1.0 1.0 0.21 - - 1.0 1.0 1.0 0.12 0.47 0.047 1.0 2.15 1.2 1.2 1.2 0.25 - - 1.2 1.2 1.2 0.185 0.56 0.056 1.2 2.6 kW MUN5111DW1T1G Series, SMUN5111DW1T1G Series ALL MUN5111DW1T1G SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RqJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve - ALL DEVICES http://onsemi.com 5 150 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5111DW1T1G, SMUN5111DW1T1G TA=-25C 0.1 25C 75C 0.01 0 20 40 VCE = 10 V TA=75C 25C 100 10 -25C IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 4 1 100 25C IC, COLLECTOR CURRENT (mA) 3 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 75C f = 1 MHz lE = 0 V TA = 25C 100 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5112DW1T1G, SMUN5112DW1T1G IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 VCE = 10 V TA=75C 25C -25C 100 10 0 40 20 IC, COLLECTOR CURRENT (mA) 10 1 50 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz lE = 0 V TA = 25C TA=-25C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 9 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 10 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 IC/IB = 10 TA=-25C hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5113DW1T1G, SMUN5113DW1T1G 25C 75C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 8 50 10 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5114DW1T1G, SMUN5114DW1T1G TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 TA=75C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C TA=-25C 75C 1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 0.1 25C -25C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 100 10 1 50 25C 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 24. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 1 75C 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 12 0 VCE = 10 V 75C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5115DW1T1G, SMUN5115DW1T1G 25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 50 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 29. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 28. DC Current Gain 12 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5116DW1T1G, SMUN5116DW1T1G 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 11 50 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5130DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75C 10 25C TA = -25C 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC 100 Figure 33. DC Current Gain IC, COLLECTOR CURRENT (mA) TBD 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 VO = 5 V 0 1 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 34. Output Capacitance 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 12 25 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5131DW1T1G, SMUN5131DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75C 10 1 30 TA = -25C 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75C 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 39. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 38. DC Current Gain 12 0 25C 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 13 25 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5132DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 TA = -25C 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 44. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 10 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5133DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 0.1 TA = -25C 0.01 0.001 50 Figure 49. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 48. DC Current Gain 8 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage versus Output Current http://onsemi.com 15 50 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5134DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 0.1 TA = -25C 0.01 0.001 50 Figure 54. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 10 TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 55. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 53. DC Current Gain 3.5 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 16 50 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5135DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 59. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 8 0 100 Figure 58. DC Current Gain 12 10 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage versus Output Current http://onsemi.com 17 50 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 0.1 -25C 0.01 75C 25C IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136DW1T1G 1000 75C TA = -25C 100 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 1.0 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C TA = -25C 1 V VO O == 55VV 0 1 2 3 4 TA = -25C VO = 0.2 V 75C 0 2 6 7 8 9 10 Figure 65. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25C 75C 10 0.1 60 Figure 64. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 63. DC Current Gain 1.2 0 25C 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 66. Input Voltage versus Output Current http://onsemi.com 18 20 MUN5111DW1T1G Series, SMUN5111DW1T1G Series 1 TA = -25C 75C 0.1 25C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137DW1T1G 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 67. VCE(sat) versus IC Figure 68. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C TA = -25C 10 25C 1 0.1 0.01 0.001 60 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 11 Figure 70. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 69. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 1.2 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 71. Input Voltage versus Output Current http://onsemi.com 19 MUN5111DW1T1G Series, SMUN5111DW1T1G Series PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W D e 6 5 4 1 2 3 HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. -E- DIM A A1 A3 b C D E e L HE b 6 PL 0.2 (0.008) M E M A3 C STYLE 1: PIN 1. 2. 3. 4. 5. 6. A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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