© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 11
1Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1G Series,
SMUN5111DW1T1G Series
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1G series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating Symbol Value Unit
Collector-Base Voltage VCBO −50 Vdc
Collector-Emitter Voltage VCEO −50 Vdc
Collector Current IC−100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q1
R1
R2
R2
R1
Q2
(1)(2)(3)
(4) (5) (6)
http://onsemi.com
SC−88 / SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
1
6
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
ORDERING INFORMATION
xx = Device Code (Refer to page 2)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
xx M G
G
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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2
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1)
490 (Note 2)
°C/W
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION, DEVICE MARKINGS AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping†
MUN5111DW1T1G,
SMUN5111DW1T1G
SOT−363
(Pb−Free)
0A 10 10 3,000/Tape & Reel
MUN5112DW1T1G,
SMUN5112DW1T1G
SOT−363
(Pb−Free)
0B 22 22 3,000/Tape & Reel
MUN5113DW1T1G,
SMUN5113DW1T1G
SOT−363
(Pb−Free)
0C 47 47 3,000/Tape & Reel
MUN5114DW1T1G,
SMUN5114DW1T1G
SOT−363
(Pb−Free)
0D 10 47 3,000/Tape & Reel
MUN5115DW1T1G,
SMUN5115DW1T1G
SOT−363
(Pb−Free)
0E 10 ∞3,000/Tape & Reel
MUN5116DW1T1G,
SMUN5116DW1T1G
SOT−363
(Pb−Free)
0F 4.7 ∞3,000/Tape & Reel
MUN5130DW1T1G SOT−363
(Pb−Free)
0G 1.0 1.0 3,000/Tape & Reel
MUN5131DW1T1G,
SMUN5131DW1T1G
SOT−363
(Pb−Free)
0H 2.2 2.2 3,000/Tape & Reel
MUN5132DW1T1G SOT−363
(Pb−Free)
0J 4.7 4.7 3,000/Tape & Reel
MUN5133DW1T1G SOT−363
(Pb−Free)
0K 4.7 47 3,000/Tape & Reel
MUN5134DW1T1G SOT−363
(Pb−Free)
0L 22 47 3,000/Tape & Reel
MUN5135DW1T1G SOT−363
(Pb−Free)
0M 2.2 47 3,000/Tape & Reel
MUN5136DW1T1G SOT−363
(Pb−Free)
0N 100 100 3,000/Tape & Reel
MUN5137DW1T1G SOT−363
(Pb−Free)
0P 47 22 3,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = −50 V, IE = 0) ICBO − − −100 nAdc
Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0) ICEO − − −500 nAdc
Emitter-Base Cutoff Current
(VEB = −6.0 V, IC = 0)
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5113DW1T1G, SMUN5113DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
mAdc
Collector-Base Breakdown Voltage
(IC = −10 mA, IE = 0)
V(BR)CBO
−50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = −2.0 mA, IB = 0)
V(BR)CEO
−50 − −
Vdc
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage
(IC = −10 mA, IB = −0.3 mA)
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5113DW1T1G, SMUN5113DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
(IC = −10 mA, IB = −5 mA)
MUN5130DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5137DW1T1G
(IC = −10 mA, IB = −1 mA)
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
VCE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
Vdc
DC Current Gain
(VCE = −10 V, IC = −5.0 mA)
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5113DW1T1G, SMUN5113DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4) (Continued)
Output Voltage (on)
(VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW)
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
(VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW)
MUN5113DW1T1G, SMUN5113DW1T1G
(VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW)
MUN5136DW1T1G
(VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW)
MUN5137DW1T1G
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
Vdc
Output Voltage (off)
(VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5113DW1T1G, SMUN5113DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
(VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW)
MUN5130DW1T1G
(VCC = −5.0 V, VB = −0.25 V, RL = 1.0 kW)
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5132DW1T1G
MUN5137DW1T1G
VOH
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5113DW1T1G, SMUN5113DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k W
Resistor Ratio
MUN5111DW1T1G, SMUN5111DW1T1G
MUN5112DW1T1G, SMUN5112DW1T1G
MUN5113DW1T1G, SMUN5113DW1T1G
MUN5114DW1T1G, SMUN5114DW1T1G
MUN5115DW1T1G, SMUN5115DW1T1G
MUN5116DW1T1G, SMUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G, SMUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
R1/R20.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
0.038
0.8
1.7
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.12
0.47
0.047
1.0
2.15
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
0.056
1.2
2.6
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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5
Figure 1. Derating Curve − ALL DEVICES
300
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 490°C/W
250
PD, POWER DISSIPATION (mW)
ALL MUN5111DW1T1G SERIES DEVICES
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1G, SMUN5111DW1T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1G, SMUN5112DW1T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1G, SMUN5113DW1T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
Figure 13. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
50
IC/IB = 10
TA=-25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
VCE = 10 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1G, SMUN5114DW1T1G
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1G, SMUN5115DW1T1G
75°C
25°C
−25°C
Figure 22. VCE(sat) versus ICFigure 23. DC Current Gain
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
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11
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1G, SMUN5116DW1T1G
75°C
25°C
−25°C
Figure 27. VCE(sat) versus ICFigure 28. DC Current Gain
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
12
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1G
75°C
25°C
−25°C
Figure 32. VCE(sat) versus ICFigure 33. DC Current Gain
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
Cob, CAPACITANCE (pF)
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
TBD
IC/IB = 10 VCE = 10 V
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
13
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1G, SMUN5131DW1T1G
75°C
25°C
−25°C
Figure 37. VCE(sat) versus ICFigure 38. DC Current Gain
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
12
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
10
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
14
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1G
75°C
25°C
−25°C
Figure 42. VCE(sat) versus ICFigure 43. DC Current Gain
Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 46. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
15
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1G
75°C
25°C
−25°C
Figure 47. VCE(sat) versus ICFigure 48. DC Current Gain
Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 51. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
5
1
3
7
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
16
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1G
75°C
25°C
−25°C
Figure 52. VCE(sat) versus ICFigure 53. DC Current Gain
Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 56. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
3
45 50403020100
0
Cob, CAPACITANCE (pF)
1
2
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
2.5
0.5
1.5
3.5
10
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
17
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1G
75°C
25°C
−25°C
Figure 57. VCE(sat) versus ICFigure 58. DC Current Gain
Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 61. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
18
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G
75°C
25°C
−25°C
Figure 62. VCE(sat) versus ICFigure 63. DC Current Gain
Figure 64. Output Capacitance Figure 65. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 66. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.01
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = −25°C
VCE = 10 V
75°C
25°C
TA = −25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = −25°C
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
19
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1G
Figure 67. VCE(sat) versus ICFigure 68. DC Current Gain
Figure 69. Output Capacitance Figure 70. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 71. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
0.01
1000
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2
f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = −25°C
VO = 5 V
75°C
25°C
TA = −25°C
VO = 0.2 V
75°C
25°C
TA = −25°C
IC/IB = 10
VCE = 10 V
75°C
25°C
TA = −25°C
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
MUN5111DW1T1G Series, SMUN5111DW1T1G Series
http://onsemi.com
20
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
−E−
b6 PL
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
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