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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN10K
Ordering Information
Standard Commercial Devices
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92
60V 5.0Ω0.75A VN10KN3
Order Number / Package
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
TO-92
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
S G D
2
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source 60 V VGS = 0V, ID = 100µA
Breakdown Voltage
VGS(th) Gate Threshold Voltage 0.8 2.5 V VGS = VDS , ID = 1mA
∆VGS(th) Change in VGS(th) with Temperature -3.8 mV/°CV
GS = VDS, ID = 1mA
IGSS Gate Body Leakage 100 nA VGS = 15V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µAV
GS = 0V, VDS = 45V
500 µAV
GS = 0V, VDS = 45V, TA 125°C
ID(ON) ON-State Drain Current 0.75 A VGS = 10V, VDS = 10V
RDS(ON) 7.5 ΩVGS = 5V, ID = 0.2A
5.0 ΩVGS = 10V, ID = 500mA
∆RDS(th) Change in RDS(th) with Temperature 0.7 %/°CV
GS = 10V, ID = 500mA,
GFS Forward Transconductance 100 m VDS = 10V, ID = 500mA
CISS Input Capacitance 48 60
COSS Common Source Output Capacitance 16 25 pF
CRSS Reverse Transfer Capacitance 2 5
t(ON) Turn-ON Time 10
t(OFF) Turn-OFF Time 10
VSD Diode Forward Voltage Drop 0.8 V VGS = 0V, ISD = 0.5A
trr Reverse Recovery Time 160 ns VGS = 0V, ISD = 0.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VN10K
Package ID (continuous)1,2 ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR IDRM
@ TC = 25°C°C/W °C/W
TO-92 0.31A 1.0A 1.0W 125 170 0.31A 1.0A
Notes:
1. ID (continuous) is limited by max rated Tj.
2. VN0106N3 can be used if an ID (continuous) of 0.5 is needed.
Thermal Characteristics
Electrical Characteristics (@ 25°C unless otherwise specified)
VDS = 25V, VGS = 0V
f = 1 MHz
VDD = 15V, ID = 0.6A,
RGEN = 25Ω
ns
Static Drain-to-Source
ON-State Resistance
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Ω
3
VN10K
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
1.0
0.8
0.6
0.4
0.2
V
DS
(volts)
Maximum Rated Safe Operating Area
1 100010010
0.1
1.0
10
0.01
V
DS
(volts)
I
D
(amperes)
Switching Waveform
Input Voltage
(volts)
10
5
0
15
5
05010 20 30
t – Time(ns)
Transconductance vs. Drain Current
250
200
150
100
50
0
0 1000200 400 600 800
G
FS
(m )
I
D
(mA)
Power Dissipation vs. Case Temperature
0 15010050
2
1
1257525
T
C
(°C)
P
D
(watts)
TO-92
V
DS
= 10V
300µs, 2%
Duty Cycle
Pulse Test
TO-92 (DC)
0102030 5040
VGS =10V
6V
5V
4V
2V
0246 108
VGS =10V
6V
4V
2V
3V
Ω
0
10
40
Output Voltage
(volts)
5V
3V
9V
8V
7V
00
0
TC = 25°C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VN10K
Typical Performance Curves
Transconductance vs Gate-Source Voltage
Gfs (m )
ID (amperes)
GFS (mhos)
Output Conductance vs Drain Current
On-Resistance vs. Gate-to-Source Voltage
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C)
Transfer Characteristics
VGS (volts)
ID (amperes)
Capacitance vs. Drain-to-Source Voltage
50
40
30
20
10
0
C (picofarads)
VDS (volts)
VGS (Volts)
BVDSS Variation with Temperature
010203040
0246810
-50 0 50 100 150
1.1
1.0
0.9
100
10
1 10010
0246810
1.0
0.8
0.6
0.4
0.2
0
50
250
200
150
100
50
0
Ω
VGS (volts)
1.0
0.1
0.01
0.01 0.1 1.0
VDS = 0.1V
1
REDUCTION
DUE TO
HEATING
VDS = 10V
300µs, 2%
DUTY CYCLE
PULSE TEST
VDS = 25V
80µs, 1%
DUTY CYCLE
PULSE TEST
VDS = 10V
3000µs, 2%
DUTY CYCLE
PULSE TEST
CISS
C
OSS
CRSS
