chain Seinncivasinaenrti* S MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-S PEED SWITCHING USE ron mm sere tee imran a Peecarmimnte / FS100VSJ-03 OUTLINE DRAWING Dimensions in mm | 4 lM ae ee \ 3 \ ; 2 VO ee - oe 8 zu #8 Z/ pipe 1 5 | | coe 0.8 t st sts $28 3 5} | OF O24 oi! e4V DRIVE 1) GATE i 2 DRAIN OVDSS cece renee cette cnc eres cone tenseaenettnnes 30V a F SOURCE ~ 4; DRAIN @ FDS (ON) (MAX) corr tree tree teeter eee eens 4.7mQ t WD ccc eee eee eee eee eee eter e rete eane 100A b 3 Integrated Fast Recovery Diode (TYP.) ----- 100ns To-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Te = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage VGs = OV 30 Vv Vass Gate-source voltage Vos = OV +20 Vv ID Drain current 100 A ibm Drain current (Pulsed) 400 A IDA Avalanche drain current (Pulsed) | L = 30H 100 A Is Source current 100 A ism Source current (Pulsed) 400 A Pb Maximum power dissipation 125 WwW Teh Channet temperature ~55 ~ +150 C Tstg Storage temperature ~55 ~ +150 C _ Weight Typical value 1.2 g 2 ~ 434 MITSUBISHI ELECTRICELECTRICAL CHARACTERISTICS (Tech = 25C) MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE Limit Symbol Parameter Test conditions - ms Unit Min. Typ. Max V (BR} DSS | Drain-source breakdown voltage | ID = imA, VDS = OV 30 Vv iass Gate leakage current Vas = +20V, Vos = OV _ _ +0.1 pA ipss Drain current Vos = 30V, Vas = 0V _ 0.1 mA VGS (th) Gate-source threshold voltage. ID = ImA, VS = 10V 1.0 1.5 2.0 v rDS (ON) Drain-source on-state resistance | ID = SOA, Vas = 10V _ 3.5 4.7 mQ rDS (ON) Drain-source on-state resistance | ID = 50A, Vas = 4V _ 47 8.0 mQ VoS (ON) | Drain-source on-state voltage | |p = 50A, VGS = 10V _ 0.175 0.235 Vv | yts | Forward transfer admitiance lO = 50A, Vos = 10V 80 Ss Ciss Input capacitance _ 8000 _ pF Coss Output capacitance Vos = 10V, Vas = OV, f = 1MHz _ 2250 = pF Crss Reverse transfer capacitance => 1300 pF fd (on) Turn-on delay time _ 55 _ ns te Rise time ___ VoD = 15V, {ID = S0A, Vs = 10V, RGEN = Ras = 50Q = 190 = ns td (off) Turn-off delay time 800 _ ns tt Fail time _ 470 _ ns Vsp Source-drain voltage Is = 50A, Vas = 0V _ 1.0 1.5 Vv Rin (ch-c) | Thermal resistarice Channel to case _ 1.00 CAN trr Reverse recovery time \s = 50A, dis/dt = -SOA/is _ 100 _ ns PERFORMANCE CURVES POWEF! DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 3 w= = 2 5. 160 <= 2 & 3 10 z 5 S 420 5 3 ke i < ic 2 a va 1 a B80 3% e z 3 < Lu c 3 3 40 a Te = o Single Pulse a 0 5 0 50 100 150 200 3 57100 23 57101 23 57102 23 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 100 50 5V To = 25C av ay 4V Pulse Test V@s = 10V 6V <= 8 z 40 5V & 2 ke kb 0 30 a a ive c x 3 40 3 20 z 2 < < 5 20 5 10 To = 25C Pulse Test 9 9 0.2 0.4 0.6 0.8 1.0 0 0.1 0.2 03 0.4 0.5 DFIAIN-SOURCE VOLTAGE Vbs (V) DRAIN-SOURCE VOLTAGE Vps (V) MITSUBISHI 2 ~ 435 ELECTRICON-STATE VOLTAGE VS. MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) To = 25C 10 Te = 26C Pulse Test Pulse Test fo we <= <E Oe og zo ze On Og wy 2 uw 2 Qo> 9 c mw 38 3g Oe Oe ZA Z25 ZO LH r cw a aoc 0 0 0 2 4 6 8 10 109 23 5710' 23 57102 23 57108 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 100 102 Te = 25C 7 Vps = 10V 5 < 80 Pulse Test xg 4 a a 3 S 2 5 60 g- iui wy iva FO 10 x az ~ 40 ct 7 e oe Zz Ze 5 z ae 5 20 i < Vos = 10V Pulse Test 0 19 0 2 4 6 8 10 10 2 3945 7101 2 345 7102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 4 Toh = 25C 1o Toh = 26C f= 1MHz 5 Woo = 15V Vas = OV 3 Vas = 10V a @ 2 Ren = Res = 500 ws 108 23 s 7 zo = 5 5 oO 3 to < 2 zo 5 Og = 108 Oo s 5 a z 3 2 3 40! 25 67100 23 57101 23 57102 23 100 2 345 7101 2 345 7102 DRAIN-SOURCE VOLTAGE Vbps (V) DRAIN CURRENT Ip (A) 2 - 436 MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rps (On) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (gr) ss (tC) DRAIN-SOURCE ON-STATE RESISTANCE ros (on) (25C) GATE-SOURCE VOLTAGE Vas (V} DRAIN-SOURCE BREAKDOWN VOLTAGE V (8R) DSS (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 - 100 Teh = 25C ip = 100A =< 2 75 BK Zz i f 50 3 Vos = 15V Ww av 25V a a 5 40 80 120 160 200 0 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 4.0 Vas = 10V ip = 1/210 a 4 Pulse Test 6 32 3 i= 2 i & TQ 24 es 100 uy Ow ? So 16 5 OF 4 ot 1 O 3 ws G7 08 2 G 1 10 -50 0 50 100 150 0 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. = CHANNEL TEMPERATURE = (TYPICAL) e 1.4 3 101 Vos =0V 7 In = 1mA = 5 Si 3 1.2 2 8 400 10! 1.0 3 770.5 . a 5 o 3 2 2 0.8 2 ; = 107 G& 5 0.6 x 3 b 2 fi 92 = 4 0.4 -50 0 50 100 150 g < CHANNEL TEMPERATURE Tch (C) ia MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Vas = OV Pulse Test Te = 128C 75C 25C 0 0.4 0.8 1.2 16 2.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vbs = 10V lo=tmA -50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Pom tw 0.05 i 0.02 b= ie 0.01 Pulse Oo 029 5710323 5710223 5710-123 57100 23 5710123 57102 PULSE WIDTH tw (s) ate MITSUBISHI ELECTRIC