PD - 94004B IRFP260N HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS(on) = 0.04 G ID = 50A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 50 35 200 300 2.0 20 560 50 30 10 -55 to +175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.24 --- 0.50 --- 40 C/W 1 10/08/04 IRFP260N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 200 --- --- 2.0 27 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.26 --- --- --- --- --- --- --- --- --- --- 17 60 55 48 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 5.0 LS Internal Source Inductance --- 13 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 4057 603 161 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.04 VGS = 10V, ID = 28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 28A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 234 ID = 28A 38 nC VDS = 160V 110 VGS = 10V --- VDD = 100V --- ID = 28A ns --- RG = 1.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 50 showing the A G integral reverse --- --- 200 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 28A, VGS = 0V --- 268 402 ns TJ = 25C, IF = 28A --- 1.9 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.5mH ISD 28A, di/dt 486A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. RG = 25, IAS = 28A. 2 www.irf.com IRFP260N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 4.5V 10 1 100 I D , Drain-to-Source Current (A) 1000 100 TJ = 175 C TJ = 25 C V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 1. Typical Output Characteristics 1 4.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 20s PULSE WIDTH TJ = 175 C 0.1 0.1 3.5 ID = 50A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP260N 7000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 6000 Coss = Cds + Cgd 16 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 8000 Ciss 5000 4000 Coss 3000 2000 Crss 1000 0 V DS= 160V V DS= 100V V DS= 40V 12 8 4 0 1 10 100 ID = 28A 1000 0 50 100 150 200 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 175 C 10 TJ = 25 C 1 0.1 0.2 100us 10 1ms TC = 25 C TJ = 175 C Single Pulse V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 100 2.2 1 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP260N RD VDS 50 50 VGS D.U.T. RG ID , Drain Current (A) ID , Drain Current (A) 40 40 + V DD - 10V 30 30 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 20 VDS 10 10 0 90% 0 25 25 50 75 100 125 150 50 T 75 125 C) , Case100 Temperature (150 C 175 175 TC , Case Temperature ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 EAS , Single Pulse Avalanche Energy (mJ) IRFP260N 1500 15V L VDS DRIVER TOP BOTTOM ID 11A 20A 28A 1000 D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A 500 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFP260N Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP260N TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPE30 56 ASSEMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/