©2004 Fairchild Semiconductor Corporation Rev. A, June 2004
TIS75
TO-92
Absolute Maximum Ratings *
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width 300µs, Duty Cycle 3.0%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-So urce Voltage -30 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
Off Characteristi cs
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= 1.0µA, V
DS
= 0 -30 V
I
GSS
Gate Reverse Current V
GS
= 15V, V
DS
= 0
V
GS
= 15V, V
DS
= 0, T
a
= 100°C-2.0
-5.0 nA
µA
I
D
(off) Drain Cutoff Leakage Current V
DS
= 15V, V
GS
= -10V
V
DS
= 15V, V
GS
= -10V,
T
a
= 100°C
-2.0
-5.0 nA
µA
V
GS
(off ) Gate-Source Cutoff Volt age V
DS
= 20V, I
D
= 4.0nA -0.8 -4.0 V
On Characteristics *
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, V
GS
= 0 8 80 mA
r
DS
(on) Drain-Source On Resistance V
DS
0.1V, V
GS
= 0 60
Small Signa l C h ar ac t e ris t ic s
C
iss
Input Capacitance V
DS
= 0, V
GS
= -10V, f = 1.0MHz 18 pF
C
rss
Reverse Transfer Capacitance V
DS
= 0, V
GS
= -10V, f = 1.0MHz 8.0 pF
Switching Charact eristics
t
r
Rise T ime V
GS
(off) = -4.0V, V
GS
(on) = 0,
I
D
= 5.0mA , V
DS
= 10V 10 ns
t
on
Turn-On Time 10 ns
t
off
T urn-Off T i me 100 ns
TIS75
N-Channel General Purpose Amplifier
This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
Sourced from process 54.
1. Gate 2. Source 3. Drain
1
©2004 Fairchild Semiconductor Corporation Rev. A, June 2004
TIS75
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25
°
C350
2.8 mW
mW/
°
C
R
θJC
Thermal Resistance, Junction to Case 125
°
C/W
R
θJA
Thermal Resistance, Junction to Ambient 357
°
C/W
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
TIS75
Dimensions in Millimeters
Rev. A, June 2004©2004 Fairchild Semiconductor Corporation
©2004 Fairchild Semiconductor Corporation Rev. I11
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or systems
which, (a) are inten ded for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Form ative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notic e in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo
ImpliedDisconnect
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
VCX™
A
CEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
Across the board. Around the world.™
The Pow er Fra nc hise
®
Programmable Active Droop