UDZS3V6B - UDZS36B
Taiwan Semiconductor
1 Version: G1804
200mW, 2% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 3.6V to 36V
● VZ tolerance selection of ± 2%
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Constant voltage control
MECHANICAL DATA
● Case: SOD-323F
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 4.594 mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ 3.6-36 V
PD 200 mW
TJ Max. 150 °C
Package SOD-323F
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Power dissipation PD 200 mW
Junction temperature range TJ -55 to +150 °C
Storage temperature range TSTG -55 to +150 °C
UDZS3V6B - UDZS36B
Taiwan Semiconductor
2 Version: G1804
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE TEST
CURRENT
REGULAR IMPEDANCE
TEST
CURRENT
LEAKAGE
CURRENT
VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
V mA Ω Ω mA µA V
Min. Nom. Max. Max. Max. Max.
UDZS3V6B D0 3.60 3.60 3.85 5 90 600 1.0 4.50 1
UDZS3V9B D1 3.89 3.90 4.16 5 90 600 1.0 2.70 1
UDZS4V3B D2 4.17 4.30 4.43 5 90 600 1.0 2.70 1
UDZS4V7B D3 4.55 4.70 4.75 5 80 500 1.0 2.70 1
UDZS5V1B D4 4.98 5.10 5.20 5 60 500 1.0 1.80 2
UDZS5V6B D5 5.49 5.60 5.73 5 40 300 1.0 0.90 3
UDZS6V2B D6 6.06 6.20 6.33 5 40 150 1.0 2.70 3
UDZS6V8B D7 6.65 6.80 6.93 5 30 75 1.0 1.80 4
UDZS7V5B D8 7.28 7.50 7.60 5 30 75 1.0 0.90 4
UDZS8V2B D9 8.02 8.20 8.36 5 30 75 1.0 0.63 5
UDZS9V1B DA 8.85 9.10 9.23 5 30 90 1.0 0.45 6
UDZS10B DB 9.77 10.00 10.21 5 20 150 1.0 0.18 7
UDZS11B DC 10.76 11.00 11.22 5 20 150 1.0 0.09 8
UDZS12B DE 11.74 12.00 12.24 5 20 150 1.0 0.09 9
UDZS13B DF 12.91 13.00 13.49 5 40 160 1.0 0.045 10
UDZS15B DG 14.34 15.00 14.98 5 40 190 1.0 0.045 11
UDZS16B DH 15.85 16.00 16.51 5 40 190 1.0 0.045 12
UDZS18B DJ 17.56 18.00 18.35 5 50 220 1.0 0.045 13
UDZS20B DK 19.52 20.00 20.39 5 60 220 1.0 0.045 15
UDZS22B DL 21.54 22.00 22.47 5 80 240 1.0 0.045 17
UDZS24B DM 23.72 24.00 24.78 5 80 240 1.0 0.045 19
UDZS27B DN 26.19 27.00 27.53 5 100 300 0.5 0.045 21
UDZS30B DP 29.19 30.00 30.69 5 100 300 0.5 0.045 23
UDZS33B DR 32.15 33.00 33.79 5 100 310 0.5 0.045 25
UDZS36B DS 35.07 36.00 36.87 5 100 330 0.5 0.045 27
Notes:
1. The zener voltage (VZ) is tested under pulse condition of 30ms
2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances
3. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an ms
value equal to 10% of the DC zener current (IZT or IZK) is superimpossed to IZT or IZK
UDZS3V6B - UDZS36B
Taiwan Semiconductor
3 Version: G1804
ORDERING INFORMATION
PART NO.
(Note 1)
PACKAGE PACKING
UDZSxxxB RRG SOD-323F 3K / 7" Reel
UDZSxxxB RR SOD-323F 3K / 7" Reel
UDZSxxxB R9G SOD-323F 10K / 13" Reel
UDZSxxxB R9 SOD-323F 10K / 13" Reel
Note:
1. "xxx" defines voltage from 3.6V (UDZS3V6B) to 36V (UDZS36B)
UDZS3V6B - UDZS36B
Taiwan Semiconductor
4 Version: G1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 VZ - IZ Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
4.7
5.1 5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
Fig.2 Derating Curve
Fig.3 Zener Voltage-Temp.
Coefficient Characteristics
0
50
100
150
200
250
0 25 50 75 100 125 150
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
0.10
0 4 8 12 16 20 24 28 32 36 40
Iz=5mA
Iz=0.5mA
Ambient Temperature (
o
C)
Temp. Coefficient Characteristics(%/℃)
Zener Current, IZ (mA)
Zener Voltage, VZ (V)
Power Dissipation : PD (mW)
Zener Voltage (V)
UDZS3V6B - UDZS36B
Taiwan Semiconductor
5 Version: G1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-323F
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 1.15 1.35 0.045 0.053
B 2.30 2.80 0.091 0.110
C 0.25 0.40 0.010 0.016
D 1.60 1.80 0.063 0.071
E 0.80 1.10 0.031 0.043
F 0.05 0.25 0.002 0.010
DIM. Unit (mm) Unit (inch)
Typ. Typ.
A 0.63 0.025
B 0.83 0.033
C 1.60 0.063
D 2.86 0.113
UDZS3V6B - UDZS36B
Taiwan Semiconductor
6 Version: G1804
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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