© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 6 1Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage MJD31, MJD32
MJD31C, MJD32C
VCEO 40
100
Vdc
Collector−Base Voltage MJD31, MJD32
MJD31C, MJD32C
VCB 40
100
Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current − Continuous
− Peak IC3
5Adc
Base Current IB1 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD15
0.12 W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°CPD1.56
0.012 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 65 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.3 °C/W
Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W
Lead Temperature for Soldering Purposes TL260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
DPAK−3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
123
4YWW
J3xxG
123
4
YWW
J3xxG
http://onsemi.com
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Symbol
ÎÎÎ
Î
Î
Î
ÎÎÎ
Min
ÎÎÎ
Î
Î
Î
ÎÎÎ
Max
ÎÎÎ
Î
Î
Î
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) MJD31, MJD32
MJD31C, MJD32C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
40
100
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0) MJD31, MJD32
(VCE = 60 Vdc, IB = 0) MJD31C, MJD32C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
50
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICES
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
20
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
1
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
25
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
50
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.2
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.8
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
Î
Î
Î
ÎÎÎ
3
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎ
Î
Î
Î
ÎÎÎ
20
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = hfe⎪• ftest.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
3
0.03
IC, COLLECTOR CURRENT (AMPS)
50.07 0.3 3
70
30
300
hFE, DC CURRENT GAIN
VCE = 2 VTJ = 150°C
100
0.1 0.7
25°C
−55 °C
50
0.05 0.5 1
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
Figure 3. DC Current Gain
3
0.03
IC, COLLECTOR CURRENT (AMPS)
0.03 0.05 0.07 0.1 0.2 0.5 0.7 3
IB1 = IB2
IC/IB = 10
ts = ts − 1/8 tf
TJ = 25°C
t, TIME (s)μ
0.3
2
1
0.7
0.5
0.3
ts
0.2
0.1
0.07
0.05
12
Figure 4. Turn−On Time
2
IC, COLLECTOR CURRENT (AMPS)
0.02
IC/IB = 10
TJ = 25°C
t, TIME (s)μ
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
0.003
Figure 5. “On” Voltages
IC, COLLECTOR CURRENT (AMPS)
1
0.8
V, VOLTAGE (VOLTS)
1.4
1.2
0.4
0
+11 V
25 ms
0
−9 V
RB
−4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf 10 ns
DUTY CYCLE = 1%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
REVERSE ALL POLARITIES FOR PNP.
500
7
10
0.03 0.07 0.3 30.1 0.7
0.05 0.5 1
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
0.6
0.2
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
VCE(sat) @ IC/IB = 10
tf @ VCC = 30 V
tf @ VCC = 10 V
2.5
0
2
1.5
1
0.5
TATC
Figure 6. Turn−Off Time
TA (SURFACE MOUNT)
TC
TYPICAL CHARACTERISTICS
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
4
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
5
IB, BASE CURRENT (mA)
10 20
1.2
0.4
050 100 200 500
2
0.8
TJ = 25°C
1.6
21
IC = 0.3 A
1000
Figure 7. Collector Saturation Region
300
VR, REVERSE VOLTAGE (VOLTS)
CAPACITANCE (pF)
Ceb
0.1
200
100
0.5 1 10 40
TJ = +25°C
t, TIME (ms)
1
0.01 1 k
0.3
0.2
0.07
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7 D = 0.5
Figure 9. Thermal Response
1 A 3 A
70
50
30 0.2 0.3 2 3 5 20 30
Ccb
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
0.1
0.05
0.01
IC, COLLECTOR CURRENT (AMPS)
10
1.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.01 3 150
1
0.3
0.2
3
0.05
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5 7 20 7010
TC = 25°C SINGLE PULSE
TJ = 150°C
100ms
1ms
dc
2
0.02
0.1
0.5
2
5
Figure 10. Active Region Safe Operating Area
5030 100
CURVES APPLY BELOW RATED VCEO
500ms
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
5
ORDERING INFORMATION
Device Package Type Package Shipping
MJD31C DPAK 369C 75 Units / Rail
MJD31CG DPAK
(Pb−Free) 369C 75 Units / Rail
MJD31C1 DPAK−3 369D 75 Units / Rail
MJD31C1G DPAK−3
(Pb−Free) 369D 75 Units / Rail
MJD31CRL DPAK 369C 1800 Tape & Reel
MJD31CRLG DPAK
(Pb−Free) 369C 1800 Tape & Reel
MJD31CT4 DPAK 369C 2500 Tape & Reel
MJD31CT4G DPAK
(Pb−Free) 369C 2500 Tape & Reel
MJD31T4 DPAK 369C 2500 Tape & Reel
MJD31T4G DPAK
(Pb−Free) 369C 2500 Tape & Reel
MJD32C DPAK 369C 75 Units / Rail
MJD32CG DPAK
(Pb−Free) 369C 75 Units / Rail
MJD32C1 DPAK−3 369D 75 Units / Rail
MJD32C1G DPAK−3
(Pb−Free) 369D 75 Units / Rail
MJD32CRL DPAK 369C 1800 Tape & Reel
MJD32CRLG DPAK
(Pb−Free) 369C 1800 Tape & Reel
MJD32CT4 DPAK 369C 2500 Tape & Reel
MJD32CT4G DPAK
(Pb−Free) 369C 2500 Tape & Reel
MJD32RL DPAK 369C 1800 Tape & Reel
MJD32RLG DPAK
(Pb−Free) 369C 1800 Tape & Reel
MJD32T4 DPAK 369C 2500 Tape & Reel
MJD32T4G DPAK
(Pb−Free) 369C 2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
MJD31/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.