GaAs Schottky Diodes
Rev. V1
MGS8xx / MGS9xx Series
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Features
ï‚· 14 Different Configurations
ï‚· Beam Lead, Flip Chip, or Packaged Devices
ï‚· Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MGS series of GaAs Schottky diodes are
designed for optimum performance in millimeter
wave components operating to 60 GHz.
Beam Lead
Electrical Characteristics, TA = +25°C
Model
VF
mV
Δ VF
mV
VBR
V
CJ
pF
Δ CJ
pF RS Outline Configuration
Min. Max. Max. Min. Max. Max. Max.
MGS901 Single Junction 650 750 — 5 0.06 — 7 GB110
MGS902 Anti-parallel Pair 650 750 20 5 0.10 — 7 GB210
MGS903 Series Tee 650 750 20 5 0.06 0.02 7 GB310
MGS904 4 Junction Ring-Quad 650 750 20 5 0.06 0.02 7 B85
MGS905 4 Junction Bridge-Quad 650 750 20 5 0.06 0.02 7 B86
MGS906 4 Junction Series-Tee 1300 1500 40 10 0.04 0.02 14 B91
MGS907 8 Junction Ring-Quad 1300 1500 40 10 0.04 0.02 14 B85
MGS907A 8 Junction Ring-Quad 1300 1500 40 10 0.06 0.02 12 B85
MGS907B 8 Junction Ring-Quad 1300 1500 40 10 0.08 0.02 10 B85
MGS908 8 Junction Quad 1300 1500 40 10 0.04 0.02 14 B86
MGS909 6 Junction Series-Tee 1800 2100 60 15 0.10 0.03 21 B90
MGS910 12 Junction Ring-Quad 1800 2100 60 15 0.10 0.03 21 B87
MGS911 12 Junction Bridge-Quad 1800 2100 60 15 0.10 0.03 21 B88
MGS912 Four Junction 2500 2900 — 20 0.03 — 28 B89
Test Conditions IF = 1 mA IR = 10 µA VR = 0 V, 1 MHz IF = 5 mA
Flip Chip
Electrical Characteristics, TA = +25°C
Model Configuration
VF
mV
Δ VF
mV
VBR
V
CJ
pF
Δ CJ
pF RS Outline
Min. Max. Max. Min. Max. Max. Max.
MGS801 Single Junction 650 750 — 5 0.05 — 7 GC110
MGS801A Single Junction 650 750 — 5 0.075 — 5 GC110
MGS802 Anti-parallel Pair 650 750 20 5 0.10 — 7 GC210
MGS802A Anti-parallel Pair 650 750 20 5 0.15 — 5 GC210
MGS803 Series Tee 650 750 20 5 0.06 0.02 7 GC310
Test Conditions IF = 1 mA IR = 10 µA VR = 0 V, 1 MHz IF = 5 mA
GaAs Schottky Diodes
Rev. V1
MGS8xx / MGS9xx Series
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Outlines
Rating Limits
Reverse Voltage Rated Vbr
Forward Current 50 mA
DC Power Dissipation 75 mW per junction @ TA = 25°C
Operating Temperature -65°C to +150°
Storage Temperature -65°C to +150°
Soldering Temperature (packaged) +260°C for 5 seconds per JEDEC J-STD-20C
Minimum Beam Lead Pull Strength 6 grams
Absolute Maximum Ratings
GaAs Schottky Diodes
Rev. V1
MGS8xx / MGS9xx Series
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Outlines
GaAs Schottky Diodes
Rev. V1
MGS8xx / MGS9xx Series
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
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