MGS8xx / MGS9xx Series GaAs Schottky Diodes Rev. V1 Features 14 Different Configurations Beam Lead, Flip Chip, or Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MILPRF-38534 Available Description The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Beam Lead Electrical Characteristics, TA = +25C Model VF mV Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV VBR V CJ pF CJ pF RS Max. Max. Max. Min. Max. Max. Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 750 750 750 750 750 1500 1500 1500 1500 1500 2100 2100 2100 2900 IF = 1 mA -- 20 20 20 20 40 40 40 40 40 60 60 60 -- 5 5 5 5 5 10 10 10 10 10 15 15 15 20 IR = 10 A VF mV VBR V CJ pF CJ pF RS Max. Max. Max. 0.06 -- 0.10 -- 0.06 0.02 0.06 0.02 0.06 0.02 0.04 0.02 0.04 0.02 0.06 0.02 0.08 0.02 0.04 0.02 0.10 0.03 0.10 0.03 0.10 0.03 0.03 -- VR = 0 V, 1 MHz Outline 7 GB110 7 GB210 7 GB310 7 B85 7 B86 14 B91 14 B85 12 B85 10 B85 14 B86 21 B90 21 B87 21 B88 28 B89 IF = 5 mA Flip Chip Electrical Characteristics, TA = +25C Model VF mV Configuration MGS801 Single Junction MGS801A Single Junction MGS802 Anti-parallel Pair MGS802A Anti-parallel Pair MGS803 Series Tee Test Conditions Min. Max. Max. Min. 650 650 650 650 650 750 750 750 750 750 IF = 1 mA -- -- 20 20 20 5 5 5 5 5 IR = 10 A 0.05 -- 0.075 -- 0.10 -- 0.15 -- 0.06 0.02 VR = 0 V, 1 MHz 7 5 7 5 7 IF = 5 mA Outline GC110 GC110 GC210 GC210 GC310 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MGS8xx / MGS9xx Series GaAs Schottky Diodes Rev. V1 Absolute Maximum Ratings Rating Limits Reverse Voltage Rated Vbr Forward Current 50 mA DC Power Dissipation 75 mW per junction @ TA = 25C Operating Temperature -65C to +150 Storage Temperature -65C to +150 Soldering Temperature (packaged) +260C for 5 seconds per JEDEC J-STD-20C Minimum Beam Lead Pull Strength 6 grams Outlines 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MGS8xx / MGS9xx Series GaAs Schottky Diodes Rev. V1 Outlines 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MGS8xx / MGS9xx Series GaAs Schottky Diodes Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. 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