TO-220 Plastic-Encapsulate Transistors 3DD13005 transistor : NPN } FEATURES Power dissipation Paw: 1.5 W (Tamb=25 } Collector cunent lng 4A Collector-base voltage Vieacoa : TOO V Operating and storage junction temperature range Ts, Teg: -55C to +1504 ELECTRICAL CHARACTERISTICS (Tamb=250 TO 220 1 BASE 2COLLECTOR LEMITTER unless otherwise specified) Parameter Symbol Teast canditians MIN TYP Mle, UNIT Collector-base breakdown vollage VIBRiceo le= 1000 pw, b=O Too v Coellector-emitter breakdown voltage VIBRiceo le= 10 mA, lp=o 400 YW Emitter-base breakdown voltage VIBRieao le= 1000 pA, Ie=o 8 Vv Collector cut-off currant kao Veet TOO WV k=O 1000 uA Collector cut-off current kro Voe= 400. Vo k=O 100 yA Emitter cut-off current bere: Ve= 3 V. kod 1000 yA DC current gain fee Vee=@ 5 b= 1000mA 10 40 Cellectar-emitter saturation voltage Vice (eat) le=2000mAle=500 mA 0.6 Vv Base-emilter eaturation voltage Vee (eet) le=2000m 4, le= 500m4 1.6 Vv Tiansition Frequency ne Voesi0 V, bOs60nmA 5 f= MHz Fall time ti fer Shn=0.48, IbaZA 0.9 us Storage time ta Wen=T20V d we CLASSIFICATION OF hire Rank Range 10-15 16-20 20-25 25-30 20-36 36-40