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S25FL128S/S25FL256S
128 Mb (16 MB)/256 Mb (32 MB)
3.0V SPI Flash Memory
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 001-98283 Rev. *Q Revised April 30, 2019
Features
■CMOS 3.0 Volt Core with Versatile I/O
■SPI with Multi-I/O
❐SPI Clock polarity and phase modes 0 and 3
❐DDR option
❐Extended Addressing: 24- or 32-bit address options
❐Serial Command set and footprint compatible with
S25FL-A, S25FL-K, and S25FL-P SPI families
❐Multi I/O Command set and footprint compatible with
S25FL-P SPI family
■READ Commands
❐Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR
❐AutoBoot - power up or reset and execute a Normal or Quad
read command automatically at a preselected address
❐Common Flash Interface (CFI) data for configuration infor-
mation.
■Programming (1.5 MBps)
❐256 or 512 Byte Page Programming buffer options
❐Quad-Input Page Programming (QPP) for slow clock sys-
tems
❐Automatic ECC-internal hardware Error Correction Code
generation with single bit error correction
■Erase (0.5 to 0.65 MBps)
❐Hybrid sector size option - physical set of thirty two 4-KB
sectors at top or bottom of address space with all remaining
sectors of 64 KB, for compatibility with prior generation S25-
FL devices
❐Uniform sector option - always erase 256-KB blocks for soft-
ware compatibility with higher density and future devices.
■Cycling Endurance
❐100,000 Program-Erase Cycles, minimum
■Data Retention
❐20 Year Data Retention, minimum
■Security features
❐OTP array of 1024 bytes
❐Block Protection:
• Status Register bits to control protection against program
or erase of a contiguous range of sectors.
• Hardware and software control options
❐Advanced Sector Protection (ASP)
• Individual sector protection controlled by boot code or
password
■Cypress® 65 nm MirrorBit® Technology with Eclipse™
Architecture
■Core Supply Voltage: 2.7V to 3.6V
■I/O Supply Voltage: 1.65V to 3.6V
❐SO16 and FBGA packages
■Temperature Range / Grade:
❐Industrial (40°C to +85°C)
❐Industrial Plus (40°C to +105°C)
❐Automotive AEC-Q100 Grade 3 (40°C to +85°C)
❐Automotive AEC-Q100 Grade 2 (40°C to +105°C)
❐Automotive AEC-Q100 Grade 1 (40°C to +125°C)
■Packages (all Pb-free)
❐16-lead SOIC (300 mil)
❐WSON 6 8 mm
❐BGA-24 6 8 mm
•5 5 ball (FAB024) and 4 6 ball (FAC024) footprint
options
• Known Good Die (KGD) and Known Tested Die
Logic Block Diagram
SRAM
MirrorBit Array
Control
Logic
Data Path
X Decoders
CS#
SCK
SI/IO0
SO/IO1
HOLD#/IO3
WP#/IO2
RESET#
I/O Y Decoders
Data Latch
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S25FL128S/S25FL256S
Performance Summary
Maximum Read Rates with the Same Core and I/O Voltage (VIO = VCC = 2.7V to 3.6V)
Command Clock Rate (MHz) MBps
Read 50 6.25
Fast Read 133 16.6
Dual Read 104 26
Quad Read 104 52
Maximum Read Rates with Lower I/O Voltage (VIO = 1.65V to 2.7V, VCC = 2.7V to 3.6V)
Command Clock Rate (MHz) MBps
Read 50 6.25
Fast Read 66 8.25
Dual Read 66 16.5
Quad Read 66 33
Maximum Read Rates DDR (VIO = VCC = 3V to 3.6V)
Command Clock Rate (MHz) MBps
Fast Read DDR 80 20
Dual Read DDR 80 40
Quad Read DDR 80 80
Typical Program and Erase Rates
Operation KBps
Page Programming (256-byte page buffer - Hybrid Sector Option) 1000
Page Programming (512-byte page buffer - Uniform Sector Option) 1500
4-KB Physical Sector Erase (Hybrid Sector Option) 30
64-KB Physical Sector Erase (Hybrid Sector Option) 500
256-KB Logical Sector Erase (Uniform Sector Option) 500
Current Consumption
Operation Current (mA)
Serial Read 50 MHz 16 (max)
Serial Read 133 MHz 33 (max)
Quad Read 104 MHz 61 (max)
Quad DDR Read 80 MHz 90 (max)
Program 100 (max)
Erase 100 (max)
Standby 0.07 (typ)
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S25FL128S/S25FL256S
Contents
1. Overview ....................................................................... 4
1.1 General Description ....................................................... 4
1.2 Migration Notes.............................................................. 4
1.3 Glossary......................................................................... 6
1.4 Other Resources............................................................ 7
Hardware Interface
2. Signal Descriptions ..................................................... 8
2.1 Input/Output Summary................................................... 8
2.2 Address and Data Configuration.................................... 9
2.3 RESET# ......................................................................... 9
2.4 Serial Clock (SCK)......................................................... 9
2.5 Chip Select (CS#) .......................................................... 9
2.6 Serial Input (SI) / IO0 ..................................................... 9
2.7 Serial Output (SO) / IO1............................................... 10
2.8 Write Protect (WP#) / IO2 ............................................ 10
2.9 Hold (HOLD#) / IO3 ..................................................... 10
2.10 Core Voltage Supply (VCC) .......................................... 11
2.11 Versatile I/O Power Supply (VIO) ................................. 11
2.12 Supply and Signal Ground (VSS) ................................. 11
2.13 Not Connected (NC) .................................................... 11
2.14 Reserved for Future Use (RFU)................................... 11
2.15 Do Not Use (DNU) ....................................................... 11
2.16 Block Diagrams............................................................ 12
3. Signal Protocols......................................................... 13
3.1 SPI Clock Modes ......................................................... 13
3.2 Command Protocol ...................................................... 14
3.3 Interface States............................................................ 17
3.4 Configuration Register Effects on the Interface ........... 22
3.5 Data Protection ............................................................ 22
4. Electrical Specifications............................................ 23
4.1 Absolute Maximum Ratings ......................................... 23
4.2 Thermal Resistance..................................................... 23
4.3 Operating Ranges........................................................ 23
4.4 Power-Up and Power-Down ........................................ 24
4.5 DC Characteristics....................................................... 26
5. Timing Specifications................................................ 28
5.1 Key to Switching Waveforms ....................................... 28
5.2 AC Test Conditions...................................................... 28
5.3 Reset............................................................................ 29
5.4 SDR AC Characteristics............................................... 31
5.5 DDR AC Characteristics .............................................. 35
6. Physical Interface ...................................................... 37
6.1 SOIC 16-Lead Package ............................................... 37
6.2 WSON Package........................................................... 39
6.3 FAB024 24-Ball BGA Package .................................... 41
6.4 FAC024 24-Ball BGA Package..................................... 43
Software Interface
7. Address Space Maps.................................................. 45
7.1 Overview....................................................................... 45
7.2 Flash Memory Array...................................................... 46
7.3 ID-CFI Address Space.................................................. 47
7.4 OTP Address Space ..................................................... 47
7.5 Registers....................................................................... 49
8. Data Protection ........................................................... 58
8.1 Secure Silicon Region (OTP)........................................ 58
8.2 Write Enable Command................................................ 58
8.3 Block Protection............................................................ 59
8.4 Advanced Sector Protection ......................................... 60
9. Commands .................................................................. 64
9.1 Command Set Summary............................................... 65
9.2 Identification Commands .............................................. 70
9.3 Register Access Commands......................................... 72
9.4 Read Memory Array Commands .................................. 82
9.5 Program Flash Array Commands ................................. 98
9.6 Erase Flash Array Commands.................................... 105
9.7 One Time Program Array Commands ........................ 110
9.8 Advanced Sector Protection Commands.................... 111
9.9 Reset Commands ....................................................... 117
9.10 Embedded Algorithm Performance Tables................. 118
10. Data Integrity ............................................................. 120
10.1 Erase Endurance ........................................................ 120
10.2 Data Retention............................................................ 120
11. Software Interface Reference .................................. 121
11.1 Command Summary................................................... 121
11.2 Device ID and Common Flash Interface
(ID-CFI) Address Map................................................. 123
11.3 Device ID and Common Flash Interface
(ID-CFI) ASO Map — Automotive Only ...................... 136
11.4 Registers..................................................................... 136
11.5 Initial Delivery State .................................................... 139
12. Ordering Information................................................ 140
13. Revision History........................................................ 142
Sales, Solutions, and Legal Information ........................146
Worldwide Sales and Design Support ......................... 146
Products ...................................................................... 146
PSoC® Solutions ........................................................ 146
Cypress Developer Community ................................... 146
Technical Support ....................................................... 146
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S25FL128S/S25FL256S
1. Overview
1.1 General Description
The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using:
■MirrorBit technology - that stores two data bits in each memory array transistor
■Eclipse architecture - that dramatically improves program and erase performance
■65 nm process lithography
This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is
supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface
is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer
address and read data on both edges of the clock.
The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be
programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase
algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates
supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,
asynchronous, NOR flash memories while reducing signal count dramatically.
The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety
of embedded applications. They are ideal for code shadowing, XIP, and data storage.
1.2 Migration Notes
1.2.1 Features Comparison
The S25FL128S and S25FL256S devices are command set and footprint compatible with prior generation FL-K and FL-P families.
Table 1. FL Generations Comparison[1, 2, 3, 4, 5]
Parameter FL-K FL-P FL-S
Technology Node 90 nm 90 nm 65 nm
Architecture Floating Gate MirrorBit MirrorBit Eclipse
Release Date In Production In Production 2H2011
Density 4 Mb - 128 Mb 32 Mb - 256 Mb 128 Mb - 256 Mb
Bus Width x1, x2, x4 x1, x2, x4 x1, x2, x4
Supply Voltage 2.7V - 3.6V 2.7V - 3.6V 2.7V - 3.6V / 1.65V - 3.6V VIO
Normal Read Speed (SDR) 6 MBps (50 MHz) 5 MBps (40 MHz) 6 MBps (50 MHz)
Fast Read Speed (SDR) 13 MBps (104 MHz) 13 MBps (104 MHz) 17 MBps (133 MHz)
Dual Read Speed (SDR) 26 MBps (104 MHz) 20 MBps (80 MHz) 26 MBps (104 MHz)
Quad Read Speed (SDR) 52 MBps (104 MHz) 40 MBps (80 MHz) 52 MBps (104 MHz)
Fast Read Speed (DDR) – – 20 MBps (80 MHz)
Dual Read Speed (DDR) – – 40 MBps (80 MHz)
Quad Read Speed (DDR) – – 80 MBps (80 MHz)
Program Buffer Size 256B 256B 256B / 512B
Erase Sector Size 4 KB / 32 KB / 64 KB 64 KB / 256 KB 64 KB / 256 KB
Parameter Sector Size 4 KB 4 KB 4 KB (option)
Notes
1. 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. FL-P column indicates FL129P MIO SPI device (for 128-Mb density).
3. 64-KB sector erase option only for 128-Mb/256-Mb density FL-P and FL-S devices.
4. FL-K family devices can erase 4-KB sectors in groups of 32 KB or 64 KB.
5. Refer to individual datasheets for further details.
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S25FL128S/S25FL256S
1.2.2 Known Differences from Prior Generations
1.2.2.1 Error Reporting
Prior generation FL memories either do not have error status bits or do not set them if program or erase is attempted on a protected
sector. The FL-S family does have error reporting status bits for program and erase operations. These can be set when there is an
internal failure to program or erase or when there is an attempt to program or erase a protected sector. In either case, the program
or erase operation did not complete as requested by the command.
1.2.2.2 Secure Silicon Region (OTP)
The size and format (address map) of the OTP area is different from prior generations. The method for protecting each portion of the
OTP area is different. For additional details, see Section 8.1 Secure Silicon Region (OTP) on page 58.
1.2.2.3 Configuration Register Freeze Bit
The Configuration Register Freeze bit CR1[0], locks the state of the Block Protection bits as in prior generations. In the FL-S family,
it also locks the state of the Configuration Register TBPARM bit CR1[2], TBPROT bit CR1[5], and the Secure Silicon Region (OTP)
area.
1.2.2.4 Sector Erase Commands
The command for erasing an 8-KB area (two 4-KB sectors) is not supported.
The command for erasing a 4-KB sector is supported only in the 128-Mb and 256-Mb density FL-S devices and only for use on the
thirty two 4-KB parameter sectors at the top or bottom of the device address space.
The erase command for 64-KB sectors are supported for the 128-Mb and 256-Mb density FL-S devices when the ordering option for
4-KB parameter sectors with 64-KB uniform sectors are used. The 64-KB erase command may be applied to erase a group of
sixteen 4-KB sectors.
The erase command for a 256-KB sector replaces the 64-KB erase command when the ordering option for 256-KB uniform sectors
is used for the 128-Mb and 256-Mb density FL-S devices.
Sector Erase Time (typ.) 30 ms (4 KB), 150 ms (64 KB) 500 ms (64 KB) 130 ms (64 KB), 520 ms (256
KB)
Page Programming Time (typ.) 700 µs (256B) 1500 µs (256B) 250 µs (256B), 340 µs (512B)
OTP 768B (3 x 256B) 506B 1024B
Advanced Sector Protection No No Yes
Auto Boot Mode No No Yes
Erase Suspend/Resume Yes No Yes
Program Suspend/Resume Yes No Yes
Operating Temperature 40°C to +85°C 40°C to +85°C / +105°C 40°C to +85°C /
+105°C / +125°C
Table 1. FL Generations Comparison[1, 2, 3, 4, 5] (Continued)
Parameter FL-K FL-P FL-S
Notes
1. 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. FL-P column indicates FL129P MIO SPI device (for 128-Mb density).
3. 64-KB sector erase option only for 128-Mb/256-Mb density FL-P and FL-S devices.
4. FL-K family devices can erase 4-KB sectors in groups of 32 KB or 64 KB.
5. Refer to individual datasheets for further details.
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S25FL128S/S25FL256S
1.2.2.5 Deep Power Down
The Deep Power Down (DPD) function is not supported in FL-S family devices.
The legacy DPD (B9h) command code is instead used to enable legacy SPI memory controllers, that can issue the former DPD
command, to access a new bank address register. The bank address register allows SPI memory controllers that do not support
more than 24 bits of address, the ability to provide higher order address bits for commands, as needed to access the larger address
space of the 256-Mb density FL-S device. For additional information, see Section 7.1.1 Extended Address on page 45.
1.2.2.6 New Features
The FL-S family introduces several new features to SPI category memories:
■Extended address for access to higher memory density.
■AutoBoot for simpler access to boot code following power up.
■Enhanced High Performance read commands using mode bits to eliminate the overhead of SIO instructions when repeating the
same type of read command.
■Multiple options for initial read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands.
■DDR read commands for SIO, DIO, and QIO.
■Automatic ECC for enhanced data integrity.
■Advanced Sector Protection for individually controlling the protection of each sector. This is very similar to the Advanced Sector
Protection feature found in several other Cypress parallel interface NOR memory families.
1.3 Glossary
Command
All information transferred between the host system and memory during one period while CS# is LOW.
This includes the instruction (sometimes called an operation code or opcode) and any required
address, mode bits, latency cycles, or data.
DDP
(Dual Die Package)
Two die stacked within the same package to increase the memory capacity of a single package. Often
also referred to as a Multi-Chip Package (MCP).
DDR
(Double Data Rate) When input and output are latched on every edge of SCK.
ECC ECC Unit = 16 byte aligned and length data groups in the main Flash array and OTP array, each of
which has its own hidden ECC syndrome to enable error correction on each group.
Flash The name for a type of EEPROM that erases large blocks of memory bits in parallel, making the erase
operation much faster than early EEPROM.
High A signal voltage level ≥ VIH or a logic level representing a binary one (1).
Instruction
The 8 bit code indicating the function to be performed by a command (sometimes called an operation
code or opcode). The instruction is always the first 8 bits transferred from host system to the memory
in any command.
Low A signal voltage level V
IL or a logic level representing a binary zero (0).
LSb
(Least Significant Bit)
The right most bit, with the lowest order of magnitude value, within a group of bits of a register or data
value.
MSb
(Most Significant Bit)
The left most bit, with the highest order of magnitude value, within a group of bits of a register or data
value.
LSB
(Least Significant Byte) The right most byte, within a group of bytes.
MSB
(Most Significant Byte) The left most bit, within a group of bytes
Non-Volatile No power is needed to maintain data stored in the memory.
OPN
(Ordering Part Number)
The alphanumeric string specifying the memory device type, density, package, factory non-volatile
configuration, etc. used to select the desired device.
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S25FL128S/S25FL256S
1.4 Other Resources
1.4.1 Cypress Flash Memory Roadmap
www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap
1.4.2 Links to Software
www.cypress.com/software-and-drivers-cypress-flash-memory
1.4.3 Links to Application Notes
www.cypress.com/appnotes
Page 512 bytes or 256 bytes aligned and length group of data. The size assigned for a page depends on the
Ordering Part Number.
PCB Printed Circuit Board
PPAP Production Part Approval Process
Register Bit References Are in the format: Register_name[bit_number] or Register_name[bit_range_MSb: bit_range_LSB]
SDR
(Single Data Rate) When input is latched on the rising edge and output on the falling edge of SCK.
Sector Erase unit size; depending on device model and sector location this may be 4 KB, 64 KB or 256 KB.
Write
An operation that changes data within volatile or nonvolatile registers bits or nonvolatile flash memory.
When changing nonvolatile data, an erase and reprogramming of any unchanged nonvolatile data is
done, as part of the operation, such that the nonvolatile data is modified by the write operation, in the
same way that volatile data is modified – as a single operation. The nonvolatile data appears to the
host system to be updated by the single write command, without the need for separate commands for
erase and reprogram of adjacent, but unaffected data.
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S25FL128S/S25FL256S
Hardware Interface
Serial Peripheral Interface with Multiple Input / Output (SPI-MIO)
Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large
number of signal connections and larger package size. The large number of connections increase power consumption due to so
many signals switching and the larger package increases cost.
The S25FL128S and S25FL256S devices reduce the number of signals for connection to the host system by serially transferring all
control, address, and data information over 4 to 6 signals. This reduces the cost of the memory package, reduces signal switching
power, and either reduces the host connection count or frees host connectors for use in providing other features.
The S25FL128S and S25FL256S devices use the industry standard single bit Serial Peripheral Interface (SPI) and also supports
optional extension commands for two bit (Dual) and four bit (Quad) wide serial transfers. This multiple width interface is called SPI
Multi-I/O or SPI-MIO.
2. Signal Descriptions
2.1 Input/Output Summary
Table 2. Signal List
Signal
Name Type Description
RESET# Input Hardware Reset: Low = device resets and returns to Standby state, ready to receive a command. The
signal has an internal pull-up resistor and may be left unconnected in the host system if not used.
SCK Input Serial Clock
CS# Input Chip Select
SI / IO0 I/O Serial Input for single bit data commands or IO0 for Dual or Quad commands.
SO / IO1 I/O Serial Output for single bit data commands. IO1 for Dual or Quad commands.
WP# / IO2 I/O Write Protect when not in Quad mode. IO2 in Quad mode. The signal has an internal pull-up resistor
and may be left unconnected in the host system if not used for Quad commands.
HOLD# /
IO3 I/O
Hold (pause) serial transfer in single bit or Dual data commands. IO3 in Quad-I/O mode. The signal
has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad
commands.
VCC Supply Core Power Supply.
VIO Supply Versatile I/O Power Supply.
VSS Supply Ground.
NC Unused
Not Connected. No device internal signal is connected to the package connector nor is there any
future plan to use the connector for a signal. The connection may safely be used for routing space for
a signal on a PCB. However, any signal connected to an NC must not have voltage levels higher than
VIO.
RFU Reserved
Reserved for Future Use. No device internal signal is currently connected to the package connector
but there is potential future use of the connector for a signal. It is recommended to not use RFU
connectors for PCB routing channels so that the PCB may take advantage of future enhanced features
in compatible footprint devices.
DNU Reserved
Do Not Use. A device internal signal may be connected to the package connector. The connection
may be used by Cypress for test or other purposes and is not intended for connection to any host
system signal. Any DNU signal related function will be inactive when the signal is at VIL. The signal has
an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS.
Do not use these connections for PCB signal routing channels. Do not connect any host system signal
to this connection.
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S25FL128S/S25FL256S
2.2 Address and Data Configuration
Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the SI signal. Data
may be sent back to the host serially on the Serial Output (SO) signal.
Dual or Quad Output commands send information from the host to the memory only on the SI signal. Data will be returned to the
host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input/Output (I/O) commands send information from the host to the memory as bit pairs on IO0 and IO1 or four bit
(nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups
on IO0, IO1, IO2, and IO3.
2.3 RESET#
The RESET# input provides a hardware method of resetting the device to standby state, ready for receiving a command. When
RESET# is driven to logic LOW (VIL) for at least a period of tRP, the device:
■terminates any operation in progress,
■tristates all outputs,
■resets the volatile bits in the Configuration Register,
■resets the volatile bits in the Status Registers,
■resets the Bank Address Register to zero,
■loads the Program Buffer with all ones,
■reloads all internal configuration information necessary to bring the device to standby mode,
■and resets the internal Control Unit to Standby state.
RESET# causes the same initialization process as is performed when power comes up and requires tPU time.
RESET# may be asserted LOW at any time. To ensure data integrity, any operation that was interrupted by a hardware reset should
be reinitiated once the device is ready to accept a command sequence.
When RESET# is first asserted LOW, the device draws ICC1 (50 MHz value) during tPU. If RESET# continues to be held at VSS, the
device draws CMOS standby current (ISB).
RESET# has an internal pull-up resistor and may be left unconnected in the host system if not used.
The RESET# input is not available on all packages options. When not available, the RESET# input of the device is tied to the inactive
state, inside the package.
2.4 Serial Clock (SCK)
This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on
the rising edge of the SCK signal. Data output changes after the falling edge of SCK, in SDR commands, and after every edge in
DDR commands.
2.5 Chip Select (CS#)
The chip select signal indicates when a command for the device is in process and the other signals are relevant for the memory
device. When the CS# signal is at the logic HIGH state, the device is not selected and all input signals are ignored and all output
signals are high impedance. Unless an internal Program, Erase or Write Registers (WRR) embedded operation is in progress, the
device will be in the Standby Power mode. Driving the CS# input to logic LOW state enables the device, placing it in the Active
Power mode. After Power-up, a falling edge on CS# is required prior to the start of any command.
2.6 Serial Input (SI) / IO0
This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed.
Values are latched on the rising edge of serial SCK clock signal.
SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in
SDR commands, and on every edge of SCK, in DDR commands).
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S25FL128S/S25FL256S
2.7 Serial Output (SO) / IO1
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock
signal.
SO becomes IO1 - an input and output during Dual and Quad commands for receiving addresses, and data to be programmed
(values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in SDR commands,
and on every edge of SCK, in DDR commands).
2.8 Write Protect (WP#) / IO2
When WP# is driven LOW (VIL), during a WRR command and while the Status Register Write Disable (SRWD) bit of the Status
Register is set to a ‘1’, it is not possible to write to the Status and Configuration Registers. This prevents any alteration of the Block
Protect (BP2, BP1, BP0) and TBPROT bits of the Status Register. As a consequence, all the data bytes in the memory area that are
protected by the Block Protect and TBPROT bits, are also hardware protected against data modification if WP# is LOW during a
WRR command.
The WP# function is not available when the Quad mode is enabled (CR[1]=1). The WP# function is replaced by IO2 for input and
output during Quad mode for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal)
as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands).
WP# has an internal pull-up resistor; when unconnected, WP# is at VIH and may be left unconnected in the host system if not used
for Quad mode.
2.9 Hold (HOLD#) / IO3
The Hold (HOLD#) signal is used to pause any serial communications with the device without deselecting the device or stopping the
serial clock.
To enter the Hold condition, the device must be selected by driving the CS# input to the logic LOW state. It is recommended that the
user keep the CS# input LOW state during the entire duration of the Hold condition. This is to ensure that the state of the interface
logic remains unchanged from the moment of entering the Hold condition. If the CS# input is driven to the logic HIGH state while the
device is in the Hold condition, the interface logic of the device will be reset. To restart communication with the device, it is
necessary to drive HOLD# to the logic HIGH state while driving the CS# signal into the logic LOW state. This prevents the device
from going back into the Hold condition.
The Hold condition starts on the falling edge of the Hold (HOLD#) signal, provided that this coincides with SCK being at the logic
LOW state. If the falling edge does not coincide with the SCK signal being at the logic LOW state, the Hold condition starts whenever
the SCK signal reaches the logic LOW state. Taking the HOLD# signal to the logic LOW state does not terminate any Write,
Program or Erase operation that is currently in progress.
During the Hold condition, SO is in high impedance and both the SI and SCK input are Don't Care.
The Hold condition ends on the rising edge of the Hold (HOLD#) signal, provided that this coincides with the SCK signal being at the
logic LOW state. If the rising edge does not coincide with the SCK signal being at the logic LOW state, the Hold condition ends
whenever the SCK signal reaches the logic LOW state.
The HOLD# function is not available when the Quad mode is enabled (CR1[1] =1). The Hold function is replaced by IO3 for input
and output during Quad mode for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK
signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands).
The HOLD# signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad mode.
Figure 1. HOLD Mode Operation
CS#
SCK
HOLD#
SI_or_IO_(during_input)
SO_or_IO_(internal)
SO_or_IO_(external)
Valid Input Don't Care Valid Input Don't Care Valid Input
A B C D E
A B B C D E
Hold Condition
Standard Use
Hold Condition
Non-standard Use
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S25FL128S/S25FL256S
2.10Core Voltage Supply (VCC)
VCC is the voltage source for all device internal logic. It is the single voltage used for all device internal functions including read,
program, and erase. The voltage may vary from 2.7V to 3.6V.
2.11 Versatile I/O Power Supply (VIO)
The Versatile I/O (VIO) supply is the voltage source for all device input receivers and output drivers and allows the host system to set
the voltage levels that the device tolerates on all inputs and drives on outputs (address, control, and IO signals). The VIO range is
1.65V to VCC. VIO cannot be greater than VCC.
For example, a VIO of 1.65V - 3.6V allows for I/O at the 1.8V, 2.5V or 3V levels, driving and receiving signals to and from other 1.8V,
2.5V or 3V devices on the same data bus. VIO may be tied to VCC so that interface signals operate at the same voltage as the core
of the device. VIO is not available in all package options, when not available the VIO supply is tied to VCC internal to the package.
During the rise of power supplies, the VIO supply voltage must remain less than or equal to the VCC supply voltage. This supply is not
available in all package options. For a backward compatible with the SO16 package, the VIO supply is tied to VCC inside the
package; thus, the IO will function at VCC level.
2.12Supply and Signal Ground (VSS)
VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers.
2.13Not Connected (NC)
No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The
connection may safely be used for routing space for a signal on a PCB. However, any signal connected to an NC must not have
voltage levels higher than VIO.
2.14Reserved for Future Use (RFU)
No device internal signal is currently connected to the package connector but is there potential future use of the connector. It is
recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced
features in compatible footprint devices.
2.15Do Not Use (DNU)
A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other
purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the
signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS.
Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections.
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S25FL128S/S25FL256S
2.16 Block Diagrams
Figure 2. Bus Master and Memory Devices on the SPI Bus - Single Bit Data Path
Figure 3. Bus Master and Memory Devices on the SPI Bus - Dual Bit Data Path
Figure 4. Bus Master and Memory Devices on the SPI Bus - Quad Bit Data Path
SPI
Bus Master
HOLD#
WP#
SO
SI
SCK
CS2#
CS1#
FL-S
Flash
FL-S
Flash
HOLD#
WP#
SO
SI
SCK
CS2#
CS1#
SPI
Bus Master
HOLD#
WP#
IO1
IO0
SCK
CS2#
CS1#
FL-S
Flash
FL-S
Flash
HOLD#
WP#
IO0
IO1
SCK
CS2#
CS1#
SPI
Bus Master
IO3
IO2
IO1
IO0
SCK
CS2#
CS1#
FL-S
Flash
FL-S
Flash
IO3
IO2
IO0
IO1
SCK
CS2#
CS1#
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S25FL128S/S25FL256S
3. Signal Protocols
3.1 SPI Clock Modes
3.1.1 SDR
The S25FL128S and S25FL256S devices can be driven by an embedded microcontroller (bus master) in either of the two following
clocking modes.
Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0
Mode 3 with CPOL = 1 and, CPHA = 1
For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is
always available from the falling edge of the SCK clock signal.
The difference between the two modes is the clock polarity when the bus master is in Standby mode and not transferring any data.
SCK will stay at logic LOW state with CPOL = 0, CPHA = 0
SCK will stay at logic HIGH state with CPOL = 1, CPHA = 1
Figure 5. SPI SDR Modes Supported
Timing diagrams throughout the remainder of the document are generally shown as both mode 0 and 3 by showing SCK as both
HIGH and LOW at the fall of CS#. In some cases, a timing diagram may show only mode 0 with SCK LOW at the fall of CS#. In such
a case, mode 3 timing simply means clock is HIGH at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of
CS# is needed for mode 3.
SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the
first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low
at the beginning of a command.
3.1.2 DDR
Mode 0 and Mode 3 are also supported for DDR commands. In DDR commands, the instruction bits are always latched on the rising
edge of clock, the same as in SDR commands. However, the address and input data that follow the instruction are latched on both
the rising and falling edges of SCK. The first address bit is latched on the first rising edge of SCK following the falling edge at the end
of the last instruction bit. The first bit of output data is driven on the falling edge at the end of the last access latency (dummy) cycle.
SCK cycles are measured (counted) in the same way as in SDR commands, from one falling edge of SCK to the next falling edge of
SCK. In mode 0 the beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge
of SCK because SCK is already low at the beginning of a command.
Figure 6. SPI DDR Modes Supported
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
SI
SO
MSb
MSb
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
CS#
Transfer_Phase
SI
SO
Inst. 7 Inst. 0 A31 A30 A0 M7 M6 M0
DLP7 DLP0 D0 D1
Dummy / DLPAddress ModeInstruction Read Data
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S25FL128S/S25FL256S
3.2 Command Protocol
All communication between the host system and S25FL128S and S25FL256S memory devices is in the form of units called
commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands
may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the memory. All
instruction, address, and data information is transferred serially between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to the host serially on
the SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be returned to the host as a
sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input/Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3.
Commands are structured as follows:
■Each command begins with CS# going LOW and ends with CS# returning HIGH. The memory device is selected by the host driving
the Chip Select (CS#) signal low throughout a command.
■The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory.
■Each command begins with an eight bit (byte) instruction. The instruction is always presented only as a single bit serial sequence
on the Serial Input (SI) signal with one bit transferred to the memory device on each SCK rising edge. The instruction selects the
type of information transfer or device operation to be performed.
■The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces in
the device. The instruction determines the address space used. The address may be either a 24-bit or a 32-bit byte boundary,
address. The address transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
■The width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be
single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit groups per (dual) transfer on the IO0 and
IO1 signals, or they may be done in 4 bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the least
significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. SIngle bits or
parallel bit groups are transferred in most to least significant bit order.
■Some instructions send an instruction modifier called mode bits, following the address, to indicate that the next command will be of
the same type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte, only
a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated in
a sequence of commands. The mode bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR
commands.
■The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before read
data is returned to the host.
■Write data bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
■SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred to
as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling edge at
the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following SCK rising
edge. Each following transfer occurs on the next SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands.
■If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal HIGH.
The CS# signal can be driven HIGH after any transfer in the read data sequence. This will terminate the command.
■At the end of a command that does not return data, the host drives the CS# input HIGH. The CS# signal must go HIGH after the
eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven HIGH
when the number of clock cycles after CS# signal was driven LOW is an exact multiple of eight cycles. If the CS# signal does not
go HIGH exactly at the eight SCK cycle boundary of the instruction or write data, the command is rejected and not executed.
■All instruction, address, and mode bits are shifted into the device with the Most Significant Bits (MSb) first. The data bits are shifted
in and out of the device MSb first. All data is transferred in byte units with the lowest address byte sent first. Following bytes of data
are sent in lowest to highest byte address order i.e. the byte address increments.
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S25FL128S/S25FL256S
■All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded
operation. These are discussed in the individual command descriptions.
■Depending on the command, the time for execution varies. A command to read status information from an executing command is
available to determine when the command completes execution and whether the command was successful.
3.2.1 Command Sequence Examples
Figure 7. Standalone Instruction Command
Figure 8. Single Bit Wide Input Command
Figure 9. Single Bit Wide Output Command
Figure 10. Single Bit Wide I/O Command without Latency
Figure 11. Single Bit Wide I/O Command with Latency
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
Instruction
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Input Data
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Data 1 Data 2
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 31 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Address Data 1 Data 2
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 31 1 0
7 6 5 4 3 2 1 0
Instruction Address Dummy Cycles Data 1
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S25FL128S/S25FL256S
Figure 12. Dual Output Command
Figure 13. Quad Output Command without Latency
Figure 14. Dual I/O Command
Figure 15. Quad I/O Command
Figure 16. DDR Fast Read with EHPLC = 00b
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 31 1 0 4 0 4 0 4 0 4 0 4 0 4
5 1 5 1 5 1 5 1 5 1 5
6 2 6 2 6 2 6 2 6 2 6
7 3 7 3 7 3 7 3 7 3 7
Instruction Address Data 1 Data 2 Data 3 Data 4 Data 5 ...
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 30 2 0 6 4 2 0 6 4 2 0
31 3 1 7 5 3 1 7 5 3 1
Instruction Address Dummy Data 1 Data 2
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 28 4 0 4 4 0 4 0 4 0 4 0
29 5 1 5 5 1 5 1 5 1 5 1
30 6 2 6 6 2 6 2 6 2 6 2
31 7 3 7 7 3 7 3 7 3 7 3
Instruction Address Mode Dummy D1 D2 D3 D4
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 3130 0 7 6 5 4 3 2 1 0
7654321076543210
Instruction Address Mode Dummy Data 1 Data 2
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S25FL128S/S25FL256S
Figure 17. DDR Dual I/O Read with EHPLC = 01b and DLP
Figure 18. DDR Quad I/O Read
Additional sequence diagrams, specific to each command, are provided in Section 9. Commands on page 64.
3.3 Interface States
This section describes the input and output signal levels as related to the SPI interface behavior.
Table 3. Interface States Summary
Interface State VCC VIO RESET
#SCK CS# HOLD#
/ IO3
WP# /
IO2 SO / IO1 SI / IO0
Power-Off < VCC (low) VCC XXXXXZX
Low Power
Hardware Data Protection <V
CC (cut-off) VCC XXXXXZX
Power-On (Cold) Reset ≥ VCC (min) ≥ VIO (min) ≤ VCC XXXXXZX
Hardware (Warm) Reset ≥ VCC (min) ≥ VIO (min) ≤ VCC HL X X X X Z X
Interface Standby ≥ VCC (min) ≥ VIO (min) ≤ VCC HH X HH X X Z X
Instruction Cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC HH HT HL HH HV Z HV
Hold Cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC HH HV or HT HL HL X X X
Single Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL HH X Z HV
Single Latency (Dummy) Cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC HH HT HL HH X Z X
Single Output Cycle
Memory to Host Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL HH X MV X
Dual Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL HH X HV HV
Dual Latency (Dummy) Cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC HH HT HL HH X X X
Dual Output Cycle
Memory to Host Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL HH X MV MV
QPP Address Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL X X X HV
Quad Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL HV HV HV HV
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 30 28 0 6 4 2 0 7 6 5 4 3 2 1 0 6 4 2 0 6
31 29 1 7 5 3 1 7 6 5 4 3 2 1 0 7 5 3 1 7
Instruction Address Mode Dum DLP Data 1
CS#
SCK
IO0
IO1
IO2
IO3
Phase
7 6 5 4 3 2 1 0 2824 201612 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0
2925 211713 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1
3026 221814 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2
3127 231915 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3
Instruction Address Mode Dummy DLP D1 D2
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S25FL128S/S25FL256S
Legend
Z = No driver - floating signal
HL = Host driving VIL
HH = Host driving VIH
HV = Either HL or HH
X = HL or HH or Z
HT = Toggling between HL and HH
ML = Memory driving VIL
MH = Memory driving VIH
MV = Either ML or MH
3.3.1 Power-Off
When the core supply voltage is at or below the VCC (low) voltage, the device is considered to be powered off. The device does not
react to external signals, and is prevented from performing any program or erase operation.
3.3.2 Low Power Hardware Data Protection
When VCC is less than VCC (cut-off) the memory device will ignore commands to ensure that program and erase operations can not
start when the core supply voltage is out of the operating range.
3.3.3 Power-On (Cold) Reset
When the core voltage supply remains at or below the VCC (low) voltage for tPD time, then rises to VCC (Minimum) the device will
begin its Power-On Reset (POR) process. POR continues until the end of tPU. During tPU, the device does not react to external input
signals nor drive any outputs. Following the end of tPU, the device transitions to the Interface Standby state and can accept
commands. For additional information on POR, see Section 5.3.1 Power-On (Cold) Reset on page 29.
3.3.4 Hardware (Warm) Reset
Some of the device package options provide a RESET# input. When RESET# is driven LOW for tRP time, the device starts the
hardware reset process. The process continues for tRPH time. Following the end of both tRPH and the reset hold time following the
rise of RESET# (tRH) the device transitions to the Interface Standby state and can accept commands. For additional information on
hardware reset, see Section 28 POR followed by Hardware Reset on page 29.
Quad Latency (Dummy) Cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC HH HT HL X X X X
Quad Output Cycle
Memory to Host Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL MV MV MV MV
DDR Single Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL X X X HV
DDR Dual Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL X X HV HV
DDR Quad Input Cycle
Host to Memory Transfer ≥V
CC (min) ≥V
IO (min)
≤V
CC HH HT HL HV HV HV HV
DDR Latency (Dummy) Cycle ≥ VCC (min) ≥ VIO (min) ≤ VCC HH HT HL MV or Z MV or Z MV or Z MV or Z
DDR Single Output Cycle
Memory to Host Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL Z Z MV X
DDR Dual Output Cycle
Memory to Host Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL Z Z MV MV
DDR Quad Output Cycle
Memory to Host Transfer ≥V
CC (min) ≥ VIO (min) ≤ VCC HH HT HL MV MV MV MV
Table 3. Interface States Summary (Continued)
Interface State VCC VIO RESET
#SCK CS# HOLD#
/ IO3
WP# /
IO2 SO / IO1 SI / IO0
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S25FL128S/S25FL256S
3.3.5 Interface Standby
When CS# is HIGH, the SPI interface is in Standby state. Inputs other than RESET# are ignored. The interface waits for the
beginning of a new command. The next interface state is Instruction Cycle when CS# goes LOW to begin a new command.
While in interface Standby state, the memory device draws standby current (ISB) if no embedded algorithm is in progress. If an
embedded algorithm is in progress, the related current is drawn until the end of the algorithm when the entire device returns to
standby current draw.
3.3.6 Instruction Cycle
When the host drives the MSb of an instruction and CS# goes LOW, on the next rising edge of SCK the device captures the MSb of
the instruction that begins the new command. On each following rising edge of SCK, the device captures the next lower significance
bit of the 8-bit instruction. The host keeps RESET# HIGH, CS# LOW, HOLD# HIGH, and drives Write Protect (WP#) signal as
needed for the instruction. However, WP# is only relevant during instruction cycles of a WRR command and is otherwise ignored.
Each instruction selects the address space that is operated on and the transfer format used during the remainder of the command.
The transfer format may be Single, Dual output, Quad output, Dual I/O, Quad I/O, DDR Single I/O, DDR Dual I/O, or DDR Quad I/O.
The expected next interface state depends on the instruction received.
Some commands are standalone, needing no address or data transfer to or from the memory. The host returns CS# HIGH after the
rising edge of SCK for the eighth bit of the instruction in such commands. The next interface state in this case is Interface Standby.
3.3.7 Hold
When Quad mode is not enabled (CR[1]=0), the HOLD# / IO3 signal is used as the HOLD# input. The host keeps RESET# HIGH,
HOLD# LOW, SCK may be at a valid level or continue toggling, and CS# is LOW. When HOLD# is LOW a command is paused, as
though SCK were held LOW. SI / IO0 and SO / IO1 ignore the input level when acting as inputs and are high impedance when acting
as outputs during Hold state. Whether these signals are input or output depends on the command and the point in the command
sequence when HOLD# is asserted LOW.
When HOLD# returns HIGH, the next state is the same state the interface was in just before HOLD# was asserted LOW.
When Quad mode is enabled, the HOLD# / IO3 signal is used as IO3.
During DDR commands, the HOLD# and WP# inputs are ignored.
3.3.8 Single Input Cycle - Host to Memory Transfer
Several commands transfer information after the instruction on the single serial input (SI) signal from host to the memory device. The
dual output, and quad output commands send address to the memory using only SI but return read data using the I/O signals. The
host keeps RESET# HIGH, CS# LOW, HOLD# HIGH, and drives SI as needed for the command. The memory does not drive the
Serial Output (SO) signal.
The expected next interface state depends on the instruction. Some instructions continue sending address or data to the memory
using additional Single Input Cycles. Others may transition to Single Latency, or directly to Single, Dual, or Quad Output.
3.3.9 Single Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Code in the configuration register (CR[7:6]). During
the latency cycles, the host keeps RESET# HIGH, CS# LOW, and HOLD# HIGH. The Write Protect (WP#) signal is ignored. The
host may drive the SI signal during these cycles or the host may leave SI floating. The memory does not use any data driven on SI /
I/O0 or other I/O signals during the latency cycles. In dual or quad read commands, the host must stop driving the I/O signals on the
falling edge at the end of the last latency cycle. It is recommended that the host stop driving I/O signals during latency cycles so that
there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency cycles. This prevents
driver conflict between host and memory when the signal direction changes. The memory does not drive the Serial Output (SO) or I/
O signals during the latency cycles.
The next interface state depends on the command structure i.e., the number of latency cycles, and whether the read is single, dual,
or quad width.
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S25FL128S/S25FL256S
3.3.10 Single Output Cycle - Memory to Host Transfer
Several commands transfer information back to the host on the single Serial Output (SO) signal. The host keeps RESET# HIGH,
CS# LOW, and HOLD# HIGH. The Write Protect (WP#) signal is ignored. The memory ignores the Serial Input (SI) signal. The
memory drives SO with data.
The next interface state continues to be Single Output Cycle until the host returns CS# to HIGH ending the command.
3.3.11 Dual Input Cycle - Host to Memory Transfer
The Read Dual I/O command transfers two address or mode bits to the memory in each cycle. The host keeps RESET# HIGH, CS#
LOW, HOLD# HIGH. The Write Protect (WP#) signal is ignored. The host drives address on SI / IO0 and SO / IO1.
The next interface state following the delivery of address and mode bits is a Dual Latency Cycle if there are latency cycles needed or
Dual Output Cycle if no latency is required.
3.3.12 Dual Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Code in the Configuration Register (CR[7:6]).
During the latency cycles, the host keeps RESET# HIGH, CS# LOW, and HOLD# HIGH. The Write Protect (WP#) signal is ignored.
The host may drive the SI / IO0 and SO / IO1 signals during these cycles or the host may leave SI / IO0 and SO / IO1 floating. The
memory does not use any data driven on SI / IO0 and SO / IO1 during the latency cycles. The host must stop driving SI / IO0 and
SO / IO1 on the falling edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency
cycles so that there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency
cycles. This prevents driver conflict between host and memory when the signal direction changes. The memory does not drive the
SI / IO0 and SO / IO1 signals during the latency cycles.
The next interface state following the last latency cycle is a Dual Output Cycle.
3.3.13 Dual Output Cycle - Memory to Host Transfer
The Read Dual Output and Read Dual I/O return data to the host two bits in each cycle. The host keeps RESET# HIGH, CS# LOW,
and HOLD# HIGH. The Write Protect (WP#) signal is ignored. The memory drives data on the SI / IO0 and SO / IO1 signals during
the dual output cycles.
The next interface state continues to be Dual Output Cycle until the host returns CS# to HIGH ending the command.
3.3.14 QPP or QOR Address Input Cycle
The Quad Page Program and Quad Output Read commands send address to the memory only on IO0. The other IO signals are
ignored because the device must be in Quad mode for these commands thus the Hold and Write Protect features are not active. The
host keeps RESET# HIGH, CS# LOW, and drives IO0.
For QPP the next interface state following the delivery of address is the Quad Input Cycle.
For QOR the next interface state following address is a Quad Latency Cycle if there are latency cycles needed or Quad Output
Cycle if no latency is required.
3.3.15 Quad Input Cycle - Host to Memory Transfer
The Quad I/O Read command transfers four address or mode bits to the memory in each cycle. The Quad Page Program command
transfers four data bits to the memory in each cycle. The host keeps RESET# HIGH, CS# LOW, and drives the IO signals.
For Quad I/O Read the next interface state following the delivery of address and mode bits is a Quad Latency Cycle if there are
latency cycles needed or Quad Output Cycle if no latency is required. For Quad Page Program the host returns CS# HIGH following
the delivery of data to be programmed and the interface returns to standby state.
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3.3.16 Quad Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Code in the configuration register (CR[7:6]). During
the latency cycles, the host keeps RESET# HIGH, CS# LOW. The host may drive the IO signals during these cycles or the host may
leave the IO floating. The memory does not use any data driven on IO during the latency cycles. The host must stop driving the IO
signals on the falling edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency
cycles so that there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency
cycles. This prevents driver conflict between host and memory when the signal direction changes. The memory does not drive the IO
signals during the latency cycles.
The next interface state following the last latency cycle is a Quad Output Cycle.
3.3.17 Quad Output Cycle - Memory to Host Transfer
The Quad Output Read and Quad I/O Read return data to the host four bits in each cycle. The host keeps RESET# HIGH, and CS#
LOW. The memory drives data on IO0-IO3 signals during the Quad output cycles.
The next interface state continues to be Quad Output Cycle until the host returns CS# to HIGH ending the command.
3.3.18 DDR Single Input Cycle - Host to Memory Transfer
The DDR Fast Read command sends address, and mode bits to the memory only on the IO0 signal. One bit is transferred on the
rising edge of SCK and one bit on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW. The other IO
signals are ignored by the memory.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
3.3.19 DDR Dual Input Cycle - Host to Memory Transfer
The DDR Dual I/O Read command sends address, and mode bits to the memory only on the IO0 and IO1 signals. Two bits are
transferred on the rising edge of SCK and two bits on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW.
The IO2 and IO3 signals are ignored by the memory.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
3.3.20 DDR Quad Input Cycle - Host to Memory Transfer
The DDR Quad I/O Read command sends address, and mode bits to the memory on all the IO signals. Four bits are transferred on
the rising edge of SCK and four bits on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW.
The next interface state following the delivery of address and mode bits is a DDR Latency Cycle.
3.3.21 DDR Latency Cycle
DDR Read commands may have one to several latency cycles during which read data is read from the main flash memory array
before transfer to the host. The number of latency cycles are determined by the Latency Code in the configuration register (CR[7:6]).
During the latency cycles, the host keeps RESET# HIGH and CS# LOW. The host may not drive the IO signals during these cycles.
So that there is sufficient time for the host drivers to turn off before the memory begins to drive. This prevents driver conflict between
host and memory when the signal direction changes. The memory has an option to drive all the IO signals with a Data Learning
Pattern (DLP) during the last 4 latency cycles. The DLP option should not be enabled when there are fewer than five latency cycles
so that there is at least one cycle of high impedance for turn around of the IO signals before the memory begins driving the DLP.
When there are more than 4 cycles of latency the memory does not drive the IO signals until the last four cycles of latency.
The next interface state following the last latency cycle is a DDR Single, Dual, or Quad Output Cycle, depending on the instruction.
3.3.22 DDR Single Output Cycle - Memory to Host Transfer
The DDR Fast Read command returns bits to the host only on the SO / IO1 signal. One bit is transferred on the rising edge of SCK
and one bit on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW. The other IO signals are not driven by
the memory.
The next interface state continues to be DDR Single Output Cycle until the host returns CS# to HIGH ending the command.
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3.3.23 DDR Dual Output Cycle - Memory to Host Transfer
The DDR Dual I/O Read command returns bits to the host only on the IO0 and IO1 signals. Two bits are transferred on the rising
edge of SCK and two bits on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW. The IO2 and IO3 signals
are not driven by the memory.
The next interface state continues to be DDR Dual Output Cycle until the host returns CS# to HIGH ending the command.
3.3.24 DDR Quad Output Cycle - Memory to Host Transfer
The DDR Quad I/O Read command returns bits to the host on all the IO signals. Four bits are transferred on the rising edge of SCK
and four bits on the falling edge in each cycle. The host keeps RESET# HIGH, and CS# LOW.
The next interface state continues to be DDR Quad Output Cycle until the host returns CS# to HIGH ending the command.
3.4 Configuration Register Effects on the Interface
The configuration register bits 7 and 6 (CR1[7:6]) select the latency code for all read commands. The latency code selects the
number of mode bit and latency cycles for each type of instruction.
The configuration register bit 1 (CR1[1]) selects whether Quad mode is enabled to ignore HOLD# and WP# and allow Quad Page
Program, Quad Output Read, and Quad I/O Read commands. Quad mode must also be selected to allow Read DDR Quad I/O
commands.
3.5 Data Protection
Some basic protection against unintended changes to stored data are provided and controlled purely by the hardware design. These
are described below. Other software managed protection methods are discussed in the Software Interface on page 45 section of this
document.
3.5.1 Power-Up
When the core supply voltage is at or below the VCC (low) voltage, the device is considered to be powered off. The device does not
react to external signals, and is prevented from performing any program or erase operation. Program and erase operations continue
to be prevented during the Power-on Reset (POR) because no command is accepted until the exit from POR to the Interface
Standby state.
3.5.2 Low Power
When VCC is less than VCC (cut-off) the memory device will ignore commands to ensure that program and erase operations can not
start when the core supply voltage is out of the operating range.
3.5.3 Clock Pulse Count
The device verifies that all program, erase, and Write Registers (WRR) commands consist of a clock pulse count that is a multiple of
eight before executing them. A command not having a multiple of 8 clock pulse count is ignored and no error status is set for the
command.
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4. Electrical Specifications
4.1 Absolute Maximum Ratings
4.2 Thermal Resistance
4.3 Operating Ranges
Operating ranges define those limits between which the functionality of the device is guaranteed.
4.3.1 Power Supply Voltages
Some package options provide access to a separate input and output buffer power supply called VIO. Packages which do not
provide the separate VIO connection, internally connect the device VIO to VCC. For these packages, the references to VIO are also
references to VCC.
Table 4. Absolute Maximum Ratings
Storage Temperature Plastic Packages –65°C to +150°C
Ambient Temperature with Power Applied –65°C to +125°C
VCC –0.5V to +4.0V
VIO[6] –0.5V to +4.0V
Input voltage with respect to Ground (VSS)[7] –0.5V to +(VIO + 0.5V)
Output Short Circuit Current[8] 100 mA
Notes
6. VIO must always be less than or equal VCC + 200 mV.
7. See Section 4.3.3 Input Signal Overshoot on page 24 for allowed maximums during signal transition.
8. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
9. Stresses above those listed under Section 4 Absolute Maximum Ratings on page 23 may cause permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device reliability.
Parameter Description Device WNG008 SO316 FAB024 FAC024 Unit
Theta JA Thermal resistance
(junction to ambient)
S25FL128S 28 38 36 36 °C/W
S25FL256 27 37 38 38 °C/W
VCC 2.7V to 3.6V
VIO 1.65V to VCC +200 mV
4.3.2 Temperature Ranges
Parameter Symbol Device Spec Unit
Min Max
Ambient Temperature TA
Industrial (I) –40 +85
°C
Industrial Plus (V) –40 +105
Extended (N) –40 +125
Automotive, AEC-Q100 Grade 3 (A) –40 +85
Automotive, AEC-Q100 Grade 2 (B) –40 +105
Automotive AEC-Q100 Grade 1 (M) –40 +125
Note
10. Industrial Plus operating and performance parameters will be determined by device characterization and may vary from standard industrial temperature range devices
as currently shown in this specification.
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4.3.3 Input Signal Overshoot
During DC conditions, input or I/O signals should remain equal to or between VSS and VIO. During voltage transitions, inputs or I/Os
may overshoot VSS to –2.0V or overshoot to VIO +2.0V, for periods up to 20 ns.
Figure 19. Maximum Negative Overshoot Waveform
Figure 20. Maximum Positive Overshoot Waveform
4.4 Power-Up and Power-Down
The device must not be selected at power-up or power-down (that is, CS# must follow the voltage applied on VCC) until VCC reaches
the correct value as follows:
VCC (min) at power-up, and then for a further delay of tPU
VSS at power-down
A simple pull-up resistor (generally of the order of 100 k) on Chip Select (CS#) can usually be used to insure safe and proper
power-up and power-down.
The device ignores all instructions until a time delay of tPU has elapsed after the moment that VCC rises above the minimum VCC
threshold. See Figure 21. However, correct operation of the device is not guaranteed if VCC returns below VCC (min) during tPU. No
command should be sent to the device until the end of tPU.
After power-up (tPU), the device is in Standby mode (not Deep Power Down mode), draws CMOS standby current (ISB), and the
WEL bit is reset.
During power-down or voltage drops below VCC (cut-off), the voltage must drop below VCC (low) for a period of tPD for the part to
initialize correctly on power-up. See Figure 22. If during a voltage drop the VCC stays above VCC (cut-off) the part will stay initialized
and will work correctly when VCC is again above VCC (min). In the event Power-on Reset (POR) did not complete correctly after
power up, the assertion of the RESET# signal or receiving a software reset command (RESET) will restart the POR process.
Normal precautions must be taken for supply rail decoupling to stabilize the VCC supply at the device. Each device in a system
should have the VCC rail decoupled by a suitable capacitor close to the package supply connection (this capacitor is generally of the
order of 0.1 µf).
VIL
- 2.0V
20 ns
20 ns 20 ns
VIH
VIO + 2.0V
20 ns
20 ns 20 ns
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Figure 21. Power-Up
Figure 22. Power-Down and Voltage Drop
Table 5. Power-Up / Power-Down Voltage and Timing
Symbol Parameter Min Max Unit
VCC (min) VCC (Minimum Operation Voltage) 2.7 – V
VCC (cut-off) VCC (Cut 0ff Where Re-initialization is Needed) 2.4 – V
VCC (low) VCC (Low Voltage for Initialization to Occur)
VCC (Low Voltage for Initialization to Occur at Embedded)
1.6
2.3 – V
tPU V
CC (min) to Read Operation – 300 µs
tPD V
CC (low) Time 15.0 – µs
(max)
(min)
VCC
tPU Full Device Access
Time
VCC
VCC
t
PD
(max)
(min)
V
CC
t
PU
Device Access
Allowed
Time
V
CC
V
CC
No Device Access Allowed
(cut-off)
V
CC
(low)
V
CC
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4.5 DC Characteristics
Applicable within operating ranges.
Table 6. DC Characteristics — Operating Temperature Range –40°C to +85°C
Symbol Parameter Test Conditions Min Typ[11] Max Unit
VIL Input Low Voltage –0.5 – 0.2 x VIO V
VIH Input High Voltage 0.7 VIO – V
IO+0.4 V
VOL Output Low Voltage IOL = 1.6 mA, VCC = VCC min – – 0.15 VIO V
VOH Output High Voltage IOH = –0.1 mA 0.85 VIO – V
ILI Input Leakage
Current VCC = VCC Max, VIN = VIH or VIL – – ±2 µA
ILO Output Leakage
Current VCC = VCC Max, VIN = VIH or VIL – – ±2 µA
ICC1 Active Power Supply
Current (READ)
Serial SDR@50 MHz
Serial SDR@133 MHz
Quad SDR@80 MHz
Quad SDR@104 MHz
Quad DDR@66 MHz
Quad DDR@80 MHz
Outputs unconnected during read data return[12]
– –
16
33
50
61
75
90
mA
ICC2
Active Power Supply
Current (Page
Program)
CS# = VIO – – 100 mA
ICC3 Active Power Supply
Current (WRR) CS# = VIO – – 100 mA
ICC4 Active Power Supply
Current (SE) CS# = VIO – – 100 mA
ICC5 Active Power Supply
Current (BE) CS# = VIO – – 100 mA
ISB
(Industrial) Standby Current RESET#, CS# = VIO; SI, SCK = VIO or V
SS,
Industrial Temp – 70 100 µA
ISB
(Industrial Plus) Standby Current RESET#, CS# = VIO; SI, SCK = VIO or V
SS,
Industrial Plus Temp – 70 300 µA
Notes
11. Typical values are at TAI = 25°C and VCC = VIO = 3V.
12. Output switching current is not included.
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4.5.1 Active Power and Standby Power Modes
The device is enabled and in the Active Power mode when Chip Select (CS#) is LOW. When CS# is HIGH, the device is disabled,
but may still be in an Active Power mode until all program, erase, and write operations have completed. The device then goes into
the Standby Power mode, and power consumption drops to ISB.
Table 7. DC Characteristics — Operating Temperature Range -40°C to +105°C and -40°C to +125°C
Symbol Parameter Test Conditions Min Typ[13] Max Unit
VIL Input Low Voltage –0.5 – 0.2 x VIO V
VIH Input High Voltage 0.7 VIO – V
IO+0.4 V
VOL Output Low Voltage IOL = 1.6 mA, VCC = VCC min – 0.15 x VIO V
VOH Output High Voltage IOH = –0.1 mA 0.85 VIO – V
ILI Input Leakage
Current VCC = VCC Max, VIN = VIH or VIL – – ±2 µA
ILO Output Leakage
Current VCC = VCC Max, VIN = VIH or VIL – – ±2 µA
ICC1 Active Power Supply
Current (READ)
Serial SDR@50 MHz
Serial SDR@133 MHz
Quad SDR@80 MHz
Quad SDR@104 MHz
Quad DDR@66 MHz
Quad DDR@80 MHz
Outputs unconnected during read data
return[14]
– –
22
35
50
61
75
90
mA
ICC2
Active Power Supply
Current (Page
Program)
CS# = VIO – – 100 mA
ICC3 Active Power Supply
Current (WRR) CS# = VIO – – 100 mA
ICC4
Active Power Supply
Current (SE) CS# = VIO – – 100 mA
ICC5
Active Power Supply
Current (BE) CS# = VIO – – 100 mA
ISB (Industrial) Standby Current RESET#, CS# = VIO; SI, SCK = VIO or
VSS, Industrial Temp – 70 100 µA
ISB (Industrial Plus) Standby Current RESET#, CS# = VIO; SI, SCK = VIO or
VSS, Industrial Plus Temp – 70 300 µA
Notes
13. Typical values are at TAI = 25°C and VCC = VIO = 3V.
14. Output switching current is not included.
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5. Timing Specifications
5.1 Key to Switching Waveforms
Figure 23. Waveform Element Meanings
Figure 24. Input, Output, and Timing Reference Levels
5.2 AC Test Conditions
Figure 25. Test Setup
Table 8. AC Measurement Conditions
Symbol Parameter Min Max Unit
CLLoad Capacitance 30
15[18] pF
Input Rise and Fall Times – 2.4 ns
Input Pulse Voltage 0.2 x VIO to 0.8 VIO V
Input Timing Ref Voltage 0.5 VIO V
Output Timing Ref Voltage 0.5 VIO V
Notes
15. Output High-Z is defined as the point where data is no longer driven.
16. Input slew rate: 1.5 V/ns.
17. AC characteristics tables assume clock and data signals have the same slew rate (slope).
18. DDR Operation.
Input
Symbol
Output
Valid at logic high or low
Valid at logic high or low High Impedance Any change permitted Logic high Logic low
Valid at logic high or lowValid at logic high or low High Impedance Changing, state unknown Logic high Logic low
VIO + 0.4V
0.7 x VIO
0.2 x VIO
- 0.5V
Timing Reference Level
0.5 x VIO
0.85 x VIO
0.15 x VIO
Input Levels Output Levels
Device
Under
Test
C
L
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5.2.1 Capacitance Characteristics
5.3 Reset
5.3.1 Power-On (Cold) Reset
The device executes a Power-On Reset (POR) process until a time delay of tPU has elapsed after the moment that VCC rises above
the minimum VCC threshold. See Figure 21 on page 25, Table 5 on page 25, and Table 10 on page 30. The device must not be
selected (CS# to go HIGH with VIO) during power-up (tPU), i.e. no commands may be sent to the device until the end of tPU. RESET#
is ignored during POR. If RESET# is LOW during POR and remains low through and beyond the end of tPU, CS# must remain HIGH
until tRH after RESET# returns HIGH. RESET# must return HIGH for greater than tRS before returning low to initiate a hardware
reset.
Figure 26. Reset LOW at the End of POR
Figure 27. Reset HIGH at the End of POR
Figure 28. POR followed by Hardware Reset
Table 9. Capacitance
Parameter Test Conditions Min Max Unit
CIN Input Capacitance (applies to SCK, CS#, RESET#) 1 MHz – 8 pF
COUT Output Capacitance (applies to All I/O) 1 MHz – 8 pF
Note
19. For more information on capacitance, please consult the IBIS models.
VCC
VIO
RESET#
CS#
If RESET# is low at tPU end
CS# must be high at tPU end
tPU
tRH
VCC
VIO
RESET#
CS#
If RESET# is high at tPU end
CS# may stay high or go low at tPU end
tPU
tPU
VCC
VIO
RESET#
CS#
tRStPU
tPU
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5.3.2 Hardware (Warm) Reset
When the RESET# input transitions from VIH to VIL the device will reset register states in the same manner as power-on reset but,
does not go through the full reset process that is performed during POR. The hardware reset process requires a period of tRPH to
complete. If the POR process did not complete correctly for any reason during power-up (tPU), RESET# going LOW will initiate the
full POR process instead of the hardware reset process and will require tPU to complete the POR process.
The RESET# input provides a hardware method of resetting the flash memory device to standby state.
■RESET# must be HIGH for tRS following tPU or tRPH, before going low again to initiate a hardware reset.
■When RESET# is driven low for at least a minimum period of time (tRP), the device terminates any operation in progress, tri-states
all outputs, and ignores all read/write commands for the duration of tRPH. The device resets the interface to standby state.
■If CS# is LOW at the time RESET# is asserted, CS# must return HIGH during tRPH before it can be asserted low again after tRH.
■Hardware Reset is only offered in 16-lead SOIC and BGA packages.
Figure 29. Hardware Reset
Table 10. Hardware Reset Parameters[20, 21]
Parameter Description Limit Time Unit
tRS
Reset Setup - Prior Reset end and RESET# HIGH
before RESET# LOW Min 50 ns
tRPH Reset Pulse Hold - RESET# LOW to CS# LOW Min 35 µs
tRP RESET# Pulse Width Min 200 ns
tRH Reset Hold - RESET# HIGH before CS# LOW Min 50 ns
Notes
20. RESET# LOW is optional and ignored during Power-up (tPU). If Reset# is asserted during the end of tPU, the device will remain in the reset state and tRH will determine
when CS# may go LOW.
21. Sum of tRP and tRH must be equal to or greater than tRPH.
RESET#
CS#
Any prior reset
tRS
tRP
tRHtRH
tRPHtRPH
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5.4 SDR AC Characteristics
Table 11. AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V)
Symbol Parameter Min Typ Max Unit
FSCK, R SCK Clock Frequency for READ and 4READ
instructions DC – 50 MHz
FSCK, C SCK Clock Frequency for single commands as
shown in Table 44 on page 66[25] DC – 133 MHz
FSCK, C
SCK Clock Frequency for the following dual and
quad commands: DOR, 4DOR, QOR, 4QOR,
DIOR, 4DIOR, QIOR, 4QIOR
DC – 104 MHz
FSCK, QPP SCK Clock Frequency for the QPP, 4QPP
commands DC – 80 MHz
PSCK SCK Clock Period 1/ FSCK –
tWH, tCH Clock High Time[26] 45% PSCK – – ns
tWL, tCL Clock Low Time[26] 45% PSCK – – ns
tCRT, tCLCH Clock Rise Time (slew rate) 0.1 – – V/ns
tCFT, tCHCL Clock Fall Time (slew rate) 0.1 – – V/ns
tCS CS# High Time (Read Instructions)
CS# High Time (Program/Erase)
10
50 – – ns
tCSS CS# Active Setup Time (relative to SCK) 3 – – ns
tCSH CS# Active Hold Time (relative to SCK) 3 – – ns
tSU Data in Setup Time 1.5 – 3000[27] ns
tHD Data in Hold Time 2 – – ns
tV Clock Low to Output Valid – –
8.0[23]
7.65[24]
6.5[25] ns
tHO Output Hold Time 2 – ns
tDIS Output Disable Time 0 – 8 ns
tWPS WP# Setup Time 20[22] – – ns
tWPH WP# Hold Time 100[22] – – ns
tHLCH HOLD# Active Setup Time (relative to SCK) 3 – – ns
tCHHH HOLD# Active Hold Time (relative to SCK) 3 – – ns
tHHCH HOLD# Non Active Setup Time (relative to SCK) 3 – – ns
tCHHL HOLD# Non Active Hold Time (relative to SCK) 3 – – ns
tHZ HOLD# enable to Output Invalid – – 8 ns
tLZ HOLD# disable to Output Valid – – 8 ns
Notes
22. Only applicable as a constraint for WRR instruction when SRWD is set to a 1.
23. Full VCC range (2.7 - 3.6V) and CL = 30 pF.
24. Regulated VCC range (3.0 - 3.6V) and CL = 30 pF.
25. Regulated VCC range (3.0 - 3.6V) and CL = 15 pF.
26. ±10% duty cycle is supported for frequencies 50 MHz.
27. Maximum value only applies during Program/Erase Suspend/Resume commands.
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Table 12. AC Characteristics (Single Die Package, VIO 1.65V to 2.7V, VCC 2.7V to 3.6V)
Symbol Parameter Min Typ Max Unit
FSCK, R SCK Clock Frequency for READ, 4READ
instructions DC – 50 MHz
FSCK, C SCK Clock Frequency for all others[30] DC – 66 MHz
PSCK SCK Clock Period 1/ FSCK –
tWH, tCH Clock High Time[31] 45% PSCK – – ns
tWL, tCL Clock Low Time[31] 45% PSCK – – ns
tCRT, tCLCH Clock Rise Time (slew rate) 0.1 – – V/ns
tCFT, tCHCL Clock Fall Time (slew rate) 0.1 – – V/ns
tCS CS# High Time (Read Instructions)
CS# High Time (Program/Erase)
10
50 – – ns
tCSS CS# Active Setup Time (relative to SCK) 10 – – ns
tCSH CS# Active Hold Time (relative to SCK) 3 – – ns
tSU Data in Setup Time 5 – 3000[32] ns
tHD Data in Hold Time 4 – – ns
tV Clock Low to Output Valid – – 14.5[29]
12.0[30] ns
tHO Output Hold Time 2 – ns
tDIS Output Disable Time 0 – 14 ns
tWPS WP# Setup Time 20[28] – – ns
tWPH WP# Hold Time 100[28] – – ns
tHLCH HOLD# Active Setup Time (relative to SCK) 5 – – ns
tCHHH HOLD# Active Hold Time (relative to SCK) 5 – – ns
tHHCH HOLD# Non Active Setup Time (relative to SCK) 5 – – ns
tCHHL HOLD# Non Active Hold Time (relative to SCK) 5 – – ns
tHZ HOLD# enable to Output Invalid – – 14 ns
tLZ HOLD# disable to Output Valid – – 14 ns
Notes
28. Only applicable as a constraint for WRR instruction when SRWD is set to a 1.
29. CL = 30 pF.
30. CL = 15 pF.
31. ±10% duty cycle is supported for frequencies 50 MHz.
32. Maximum value only applies during Program/Erase Suspend/Resume commands.
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5.4.1 Clock Timing
Figure 30. Clock Timing
5.4.2 Input / Output Timing
Figure 31. SPI Single Bit Input Timing
Figure 32. SPI Single Bit Output Timing
VIL max
VIH min
tCH
tCRT tCFT
tCL
VIO / 2
PSCK
CS#
SCK
SI
SO
MSb IN LSb IN
tCSS tCSS
tCSH tCSH
tCS
tSU
tHD
CS#
SCK
SI
SO MSb OUT LSb OUT
tCS
tLZ tHO tV tDIS
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Figure 33. SPI SDR MIO Timing
Figure 34. Hold Timing
Figure 35. WP# Input Timing
CS#
SCK
IO
MSB IN LSB IN . MSB OUT . LSB OUT
tCSH
tCSS
tCSS
tSU
tHD tLZ tHO
tCS
tDIStV
CS#
SCK
HOLD#
SI_or_IO_(during_input)
SO_or_IO_(during_output) A B B C D E
tHZ tLZ tHZ tLZ
tCHHL tCHHL
tHLCH
tCHHH tCHHH
tHHCH tHHCHtHLCH
Hold Condition
Standard Use Hold Condition
Non-standard Use
CS#
WP#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
WRR Instruction Input Data
tWPS tWPH
Document Number: 001-98283 Rev. *Q Page 35 of 146
S25FL128S/S25FL256S
5.5 DDR AC Characteristics
5.5.1 DDR Input Timing
Figure 36. SPI DDR Input Timing
Table 13. AC Characteristics — DDR Operation
Symbol Parameter 66 MHz 80 MHz Unit
Min Typ Max Min Typ Max
FSCK, R SCK Clock Frequency for DDR READ
instruction DC – 66 DC – 80 MHz
PSCK, R SCK Clock Period for DDR READ
instruction 15 – 12.5 – ns
tWH, tCH Clock High Time 45% PSCK – – 45% PSCK – – ns
tWL, tCL Clock Low Time 45% PSCK – – 45% PSCK – – ns
tCS CS# High Time (Read Instructions) 10 – – 10 – – ns
tCSS CS# Active Setup Time (relative to SCK) 3 – – 3 – – ns
tCSH CS# Active Hold Time (relative to SCK) 3 – – 3 – – ns
tSU IO in Setup Time 2 – 3000[34] 1.5 – 3000[34] ns
tHD IO in Hold Time 2 – – 1.5 – – ns
tVClock Low to Output Valid – – 6.5[33] – – 6.5[33] ns
tHO Output Hold Time 1.5 – 1.5 – – ns
tDIS Output Disable Time – – 8 – – 8 ns
tLZ Clock to Output Low Impedance 0 – 8 0 – 8 ns
tO_SKEW First Output to last Output data valid time – – 600 – – 600 ps
Notes
33. Regulated VCC range (3.0 - 3.6V) and CL = 15 pF.
34. Maximum value only applies during Program/Erase Suspend/Resume commands.
CS#
SCK
SI_or_IO
SO
MSb IN LSb IN
tCSS tCSS
tCSH tCSH
tCS
tSU
tSU
tHD
tHD
Document Number: 001-98283 Rev. *Q Page 36 of 146
S25FL128S/S25FL256S
5.5.2 DDR Output Timing
Figure 37. SPI DDR Output Timing
5.5.3 DDR Data Valid Timing Using DLP
Figure 38. SPI DDR Data Valid Window
The minimum data valid window (tDV) and tV minimum can be calculated as follows:
tDV = Minimum half clock cycle time (tCLH)[35] - tOTT[35] - tIO_SKEW[36]
tV _min = tHO + tIO_SKEW + tOTT
Example:
80 MHz clock frequency = 12.5 ns clock period, DDR operations and duty cycle of 45% or higher
tCLH = 0.45 x PSCK = 0.45 x 12.5 ns = 5.625 ns
Bus impedance of 45 ohm and capacitance of 22 pf, with timing reference of 0.75VCC, the rise time from 0 to 1 or fall time 1 to 0 is
1.4[40] x RC time constant (Tau)[39] = 1.4 x 0.99 ns = 1.39 ns
tOTT = rise time or fall time = 1.39 ns.
Data Valid Window
tDV = tCLH - tIO_SKEW - tOTT = 5.625 ns - 600 ps - 1.39 ns = 3.635 ns
tV Minimum
tV _min = tHO + tIO_SKEW + tOTT = 1.0 ns + 600 ps + 1.39 ns = 2.99 ns
CS#
SCK
SI
SO_or_IO MSb LSb
tCS
tVtV tDIStLZ tHO
SCK
IO Slow
IO Fast
IO_valid
Slow D1
S
.Slow D2
Fast D1 Fast D2
D1 D2
tV
tIO_SKEW
tDV
tCL tCH
tOTT
pSCK
tHO
tV_min
tV
Notes
35. tCLH is the shorter duration of tCL or tCH.
36. tIO_SKEW is the maximum difference (delta) between the minimum and maximum tV (output valid) across all IO signals.
37. tOTT is the maximum Output Transition Time from one valid data value to the next valid data value on each IO. tOTT is dependent on system level considerations
including:
a. Memory device output impedance (drive strength).
b. System level parasitics on the IOs (primarily bus capacitance).
c. Host memory controller input VIH and VIL levels at which 0 to 1 and 1 to 0 transitions are recognized.
d. tOTT is not a specification tested by Cypress, it is system dependent and must be derived by the system designer based on the above considerations.
38. tDV is the data valid window.
39. Tau = R (Output Impedance) x C (Load capacitance).
40. Multiplier of Tau time for voltage to rise to 75% of VCC.
Document Number: 001-98283 Rev. *Q Page 37 of 146
S25FL128S/S25FL256S
6. Physical Interface
6.1 SOIC 16-Lead Package
6.1.1 SOIC 16 Connection Diagram
Figure 39. 16-Lead SOIC Package, Top View
Table 14. Model Specific Connections[41]
VIO / RFU
Versatile I/O or RFU — Some device models bond this connector to the device I/O power supply,
other models bond the device I/O supply to Vcc within the package leaving this package connector
unconnected.
RESET# / RFU
RESET# or RFU — Some device models bond this connector to the device RESET# signal, other
models bond the RESET# signal to Vcc within the package leaving this package connector
unconnected.
Note
41. Refer to Table 2 on page 8 for signal descriptions.
1
2
3
4
16
15
14
13
HOLD#/IO3
VCC
RESET#/RFU
DNU NC
VIO/RFU
SI/IO0
SCK
5
6
7
8
12
11
10
9WP#/IO2
VSS
DNU
DNU
DNU
RFU
CS#
SO/IO1
Document Number: 001-98283 Rev. *Q Page 38 of 146
S25FL128S/S25FL256S
6.1.2 SOIC 16 Physical Diagram
Figure 40. S03016 — 16-Lead Wide Plastic Small Outline Package (300-mil Body Width)
0.33 C
0.25 M DCA-B
0.20 C A-B
0.10 C
0.10 C
0.10 C D
2X
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
h
0
D
L2
N
e
A1
b
c
E
E1
A
0.75
10.30 BSC
1.27 BSC
0.30
10.30 BSC
0.33
0°
0.25
16
0.20
7.50 BSC
0.10
0.31
8°
0.51
2.65
2.35
A2 2.05 2.55
b1 0.27 0.48
0.30
0.20
c1
L1
0.40
L1.27
1.40 REF
0.25 BSC
05° 15°
00°
1
2-
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
-
-
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
002-15547 *A
Document Number: 001-98283 Rev. *Q Page 39 of 146
S25FL128S/S25FL256S
6.2 WSON Package
6.2.1 WSON Connection Diagram
Figure 41. Leadless Package (WSON), Top View[42]
Note
42. RESET# and VIO are pulled to VCC internal to the memory device.
1
2
3
4 5
6
7
8
CS#
SO/IO1 HOLD#/IO
3
SCK
SI/IO0
WSON
WP#/IO2
VCC
VSS
Document Number: 001-98283 Rev. *Q Page 40 of 146
S25FL128S/S25FL256S
6.2.2 WSON Physical Diagram
Figure 42. WNG008 — WSON 8-Contact (6 x 8 mm) No-Lead Package
A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT.
BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS.
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
N IS THE TOTAL NUMBER OF TERMINALS.
ALL DIMENSIONS ARE IN MILLIMETERS.
DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994.
NOTES:
MAX. PACKAGE WARPAGE IS 0.05mm.
8
7.
6.
5
2.
4
3.
1.
9
10
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
8
4
1.27 BSC.
0.40
8.00 BSC
6.00 BSC
4.80
4.65
0.20 MIN.
0.75
0.02
0.50
A1
K
A
E2
D
E
D2
b
L
ND
N
e
0.00
4.55
0.70
4.70
0.35
0.45
4.75
0.05
0.80
4.90
0.45
0.55
A3 0.20 REF
DIMENSIONS
SYMBOL
MIN. NOM. MAX.
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
SLUG AS WELL AS THE TERMINALS.
002-18827 **
Document Number: 001-98283 Rev. *Q Page 41 of 146
S25FL128S/S25FL256S
6.3 FAB024 24-Ball BGA Package
6.3.1 Connection Diagram
Figure 43. 24-Ball BGA, 5 x 5 Ball Footprint (FAB024), Top View[43]
Note
43. Signal connections are in the same relative positions as FAC024 BGA, allowing a single PCB footprint to use either package.
32541
NCNC NCRESET#/
RFU
B
D
E
A
C
VSSSCK NCVCCDNU
RFUCS# NCWP#/IO2DNU
SI/IO0SO/IO1 NCHOLD#/IO3DNU
NCNC NCVIO/RFUNC
Document Number: 001-98283 Rev. *Q Page 42 of 146
S25FL128S/S25FL256S
6.3.2 FAB024 24-Ball BGA Package Physical Diagram
Figure 44. FAB024 — 24-Ball BGA (8 x 6 mm) Package
METALLIZED MARK INDENTATION OR OTHER MEANS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
e REPRESENTS THE SOLDER BALL GRID PITCH.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
7
ALL DIMENSIONS ARE IN MILLIMETERS.
PARALLEL TO DATUM C.
5.
6
4.
3.
2.
1.
NOTES:
SD
b
eD
eE
ME
N
0.35
0.00 BSC
1.00 BSC
1.00 BSC
0.40
24
5
0.45
D1
MD
E1
E
D
A
A1 0.20
-
4.00 BSC
4.00 BSC
5
6.00 BSC
8.00 BSC
-
-1.20
-
SE 0.00 BSC
DIMENSIONS
SYMBOL MIN. NOM. MAX.
"SE" = eE/2.
002-15534 **
Document Number: 001-98283 Rev. *Q Page 43 of 146
S25FL128S/S25FL256S
6.4 FAC024 24-Ball BGA Package
6.4.1 Connection Diagram
Figure 45. 24-Ball BGA, 4 x 6 Ball Footprint (FAC024), Top View[44]
Note
44. Signal connections are in the same relative positions as FAB024 BGA, allowing a single PCB footprint to use either package.
3241
NCNC RESET#/
RFU
B
D
E
A
C
VSSSCK VCCDNU
RFUCS# WP#/IO2DNU
SI/IO0SO/IO1 HOLD#/IO3DNU
NCNC VIO/RFUNC
NC
NCNC NCNC
F
Document Number: 001-98283 Rev. *Q Page 44 of 146
S25FL128S/S25FL256S
6.4.2 FAC024 24-Ball BGA Package Physical Diagram
Figure 46. FAC024 — 24-Ball BGA (6 x 8 mm) Package
6.4.3 Special Handling Instructions for FBGA Packages
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data
integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.
METALLIZED MARK INDENTATION OR OTHER MEANS.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
e REPRESENTS THE SOLDER BALL GRID PITCH.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
8.
9.
7
ALL DIMENSIONS ARE IN MILLIMETERS.
PARALLEL TO DATUM C.
5.
6
4.
3.
2.
1.
NOTES:
SD
b
eD
eE
ME
N
0.35
0.50 BSC
1.00 BSC
1.00 BSC
0.40
24
4
0.45
D1
MD
E1
E
D
A
A1 0.25
-
5.00 BSC
3.00 BSC
6
6.00 BSC
8.00 BSC
-
-1.20
-
SE 0.50 BSC
DIMENSIONS
SYMBOL MIN. NOM. MAX.
"SE" = eE/2.
002-15535 **
Document Number: 001-98283 Rev. *Q Page 45 of 146
S25FL128S/S25FL256S
Software Interface
This section discusses the features and behaviors most relevant to host system software that interacts with S25FL128S and
S25FL256S memory devices.
7. Address Space Maps
7.1 Overview
7.1.1 Extended Address
The S25FL128S and S25FL256S devices support 32-bit addresses to enable higher density devices than allowed by previous gener-
ation (legacy) SPI devices that supported only 24-bit addresses. A 24-bit byte resolution address can access only 16 MB (128 Mb) of
maximum density. A 32-bit byte resolution address allows direct addressing of up to a 4 Gbytes (32 Gbits) of address space.
Legacy commands continue to support 24-bit addresses for backward software compatibility. Extended 32-bit addresses are enabled
in three ways:
■Bank address register — a software (command) loadable internal register that supplies the high order bits of address when legacy
24-bit addresses are in use.
■Extended address mode — a bank address register bit that changes all legacy commands to expect 32 bits of address supplied
from the host system.
■New commands — that perform both legacy and new functions, which expect 32-bit address.
The default condition at power-up and after reset, is the Bank address register loaded with zeros and the extended address mode set
for 24-bit addresses. This enables legacy software compatible access to the first 128 Mb of a device.
The S25FL128S device supports the extended address features in the same way but in essence ignores bits 31 to 24 of any address
because the main flash array only needs 24 bits of address. This enables simple migration from the 128-Mb density to higher density
devices without changing the address handling aspects of software.
7.1.2 Multiple Address Spaces
Many commands operate on the main flash memory array. Some commands operate on address spaces separate from the main
flash array. Each separate address space uses the full 32-bit address but may only define a small portion of the available address
space.
Document Number: 001-98283 Rev. *Q Page 46 of 146
S25FL128S/S25FL256S
7.2 Flash Memory Array
The main flash array is divided into erase units called sectors. The sectors are organized either as a hybrid combination of 4-KB and
64-KB sectors, or as uniform 256-KB sectors. The sector organization depends on the device model selected, see Section 12.
Ordering Information on page 140.
Table 15. S25FL256S Sector and Memory Address Map, Bottom 4-KB Sectors
Sector Size (KB) Sector Count Sector Range Address Range
(Byte Address) Notes
4 32
SA00 00000000h-00000FFFh
Sector Starting Address
—
Sector Ending Address
: :
SA31 0001F000h-0001FFFFh
64 510
SA32 00020000h-0002FFFFh
: :
SA541 01FF0000h-01FFFFFFh
Table 16. S25FL256S Sector and Memory Address Map, Top 4-KB Sectors
Sector Size (KB) Sector Count Sector Range Address Range
(Byte Address) Notes
64 510
SA00 0000000h-000FFFFh
Sector Starting Address
—
Sector Ending Address
::
SA509 01FD0000h-01FDFFFFh
432
SA510 01FE0000h-01FE0FFFh
::
SA541 01FFF000h-01FFFFFFh
Table 17. S25FL256S Sector and Memory Address Map, Uniform 256-KB Sectors
Sector Size (KB) Sector Count Sector Range Address Range (8-bit) Notes
256 128
SA00 0000000h-003FFFFh Sector Starting Address
—
Sector Ending Address
: :
SA127 1FC0000h-1FFFFFFh
Table 18. S25FL128S Sector and Memory Address Map, Bottom 4-KB Sectors
Sector Size (KB) Sector Count Sector Range Address Range
(Byte Address) Notes
4 32
SA00 00000000h-00000FFFh
Sector Starting Address
—
Sector Ending Address
: :
SA31 0001F000h-0001FFFFh
64 254
SA32 00020000h-0002FFFFh
: :
SA285 00FF0000h-00FFFFFFh
Document Number: 001-98283 Rev. *Q Page 47 of 146
S25FL128S/S25FL256S
Note: These are condensed tables that use a couple of sectors as references. There are address ranges that are not explicitly listed.
All 256 KB sectors have the pattern XXX0000h-XXXFFFFh.
7.3 ID-CFI Address Space
The RDID command (9Fh) reads information from a separate flash memory address space for device identification (ID) and
Common Flash Interface (CFI) information. See Section 11.2 Device ID and Common Flash Interface (ID-CFI) Address Map
on page 123 for the tables defining the contents of the ID-CFI address space. The ID-CFI address space is programmed by Cypress
and read-only for the host system.
7.4 OTP Address Space
Each S25FL128S and S25FL256S memory device has a 1024-byte One Time Program (OTP) address space that is separate from
the main flash array. The OTP area is divided into 32, individually lockable, 32-byte aligned and length regions.
In the 32-byte region starting at address zero:
■The 16 lowest address bytes are programmed by Cypress with a 128-bit random number. Only Cypress is able to program these bytes.
■The next 4 higher address bytes (OTP Lock Bytes) are used to provide one bit per OTP region to permanently protect each
■region from programming. The bytes are erased when shipped from Cypress. After an OTP region is programmed, it can be locked
to prevent further programming, by programming the related protection bit in the OTP Lock Bytes.
■The next higher 12 bytes of the lowest address region are Reserved for Future Use (RFU). The bits in these RFU bytes may be
programmed by the host system but it must be understood that a future device may use those bits for protection of a larger OTP
space. The bytes are erased when shipped from Cypress.
The remaining regions are erased when shipped from Cypress, and are available for programming of additional permanent data.
Refer to Figure 47 on page 48 for a pictorial representation of the OTP memory space.
The OTP memory space is intended for increased system security. OTP values, such as the random number programmed by Cypress,
can be used to “mate” a flash component with the system CPU/ASIC to prevent device substitution.
The configuration register FREEZE (CR1[0]) bit protects the entire OTP memory space from programming when set to 1. This allows
trusted boot code to control programming of OTP regions then set the FREEZE bit to prevent further OTP memory space programming
during the remainder of normal power-on system operation.
Table 19. S25FL128S Sector and Memory Address Map, Top 4-KB Sectors
Sector Size (KB) Sector Count Sector Range Address Range
(Byte Address) Notes
64 254
SA00 0000000h-000FFFFh
Sector Starting Address
—
Sector Ending Address
: :
SA253 00FD0000h-00FDFFFFh
4 32
SA254 00FE0000h-00FE0FFFh
: :
SA285 00FFF000h-00FFFFFFh
Table 20. S25FL128S Sector and Memory Address Map, Uniform 256-KB Sectors
Sector Size (KB) Sector Count Sector Range Address Range (Byte Address) Notes
256 64
SA00 0000000h-003FFFFh Sector Starting Address
—
Sector Ending Address
: :
SA63 0FC0000h-0FFFFFFh
Document Number: 001-98283 Rev. *Q Page 48 of 146
S25FL128S/S25FL256S
Figure 47. OTP Address Space
Table 21. OTP Address Map
Region Byte Address Range (Hex) Contents Initial Delivery State (Hex)
Region 0
000 Least Significant Byte of Cypress Programmed
Random Number
Cypress Programmed Ran-
dom Number
... ...
00F Most Significant Byte of Cypress Programmed
Random Number
010 to 013
Region Locking Bits
Byte 10 [bit 0] locks region 0 from programming
when = 0
...
Byte 13 [bit 7] locks region 31 from programming
when = 0
All bytes = FF
014 to 01F Reserved for Future Use (RFU) All bytes = FF
Region 1 020 to 03F Available for User Programming All bytes = FF
Region 2 040 to 05F Available for User Programming All bytes = FF
... ... Available for User Programming All bytes = FF
Region 31 3E0 to 3FF Available for User Programming All bytes = FF
32-byte OTP Region 31
.
.
.
Reserved Lock Bytes
Lock Bits 31 to 0
...
Contents of Region 0
{
Byte 0Byte 10Byte 1F
32-byte OTP Region 30
32-byte OTP Region 29
32-byte OTP Region 3
32-byte OTP Region 2
32-byte OTP Region 1
32-byte OTP Region 0
When programmed to ‘0’
each lock bit protects its
related 32-byte region from
any further programming
16-byte Random Number
Document Number: 001-98283 Rev. *Q Page 49 of 146
S25FL128S/S25FL256S
7.5 Registers
Registers are small groups of memory cells used to configure how the S25FL-S memory device operates or to report the status of
device operations. The registers are accessed by specific commands. The commands (and hexadecimal instruction codes) used for
each register are noted in each register description. The individual register bits may be volatile, non-volatile, or One Time
Programmable (OTP). The type for each bit is noted in each register description. The default state shown for each bit refers to the
state after power-on reset, hardware reset, or software reset if the bit is volatile. If the bit is non-volatile or OTP, the default state is
the value of the bit when the device is shipped from Cypress. Non-volatile bits have the same cycling (erase and program)
endurance as the main flash array.
Table 22. Register Descriptions
Register Abbreviation Type Bit Location
Status Register 1 SR1[7:0] Volatile 7:0
Configuration Register 1 CR1[7:0] Volatile 7:0
Status Register 2 SR2[7:0] RFU 7:0
AutoBoot Register ABRD[31:0] Non-volatile 31:0
Bank Address Register BRAC[7:0] Volatile 7:0
ECC Status Register ECCSR[7:0] Volatile 7:0
ASP Register ASPR[15:1] OTP 15:1
ASP Register ASPR[0] RFU 0
Password Register PASS[63:0] Non-volatile OTP 63:0
PPB Lock Register PPBL[7:1] Volatile 7:1
PPB Lock Register PPBL[0] Volatile
Read Only 0
PPB Access Register PPBAR[7:0] Non-volatile 7:0
DYB Access Register DYBAR[7:0] Volatile 7:0
SPI DDR Data Learning Registers NVDLR[7:0] Non-volatile 7:0
SPI DDR Data Learning Registers VDLR[7:0] Volatile 7:0
Document Number: 001-98283 Rev. *Q Page 50 of 146
S25FL128S/S25FL256S
7.5.1 Status Register 1 (SR1)
Related Commands: Read Status Register (RDSR1 05h), Write Registers (WRR 01h), Write Enable (WREN 06h), Write Disable
(WRDI 04h), Clear Status Register (CLSR 30h).
The Status Register contains both status and control bits:
Status Register Write Disable (SRWD) SR1[7]: Places the device in the Hardware Protected mode when this bit is set to 1 and the
WP# input is driven low. In this mode, the SRWD, BP2, BP1, and BP0 bits of the Status Register become read-only bits and the
Write Registers (WRR) command is no longer accepted for execution. If WP# is HIGH the SRWD bit and BP bits may be changed by
the WRR command. If SRWD is 0, WP# has no effect and the SRWD bit and BP bits may be changed by the WRR command. The
SRWD bit has the same non-volatile endurance as the main flash array.
Program Error (P_ERR) SR1[6]: The Program Error Bit is used as a program operation success or failure indication. When the
Program Error bit is set to a 1 it indicates that there was an error in the last program operation. This bit will also be set when the user
attempts to program within a protected main memory sector or locked OTP region. When the Program Error bit is set to a 1 this bit
can be reset to 0 with the Clear Status Register (CLSR) command. This is a read-only bit and is not affected by the WRR command.
Erase Error (E_ERR) SR1[5]: The Erase Error Bit is used as an Erase operation success or failure indication. When the Erase Error
bit is set to a 1 it indicates that there was an error in the last erase operation. This bit will also be set when the user attempts to erase
an individual protected main memory sector. The Bulk Erase command will not set E_ERR if a protected sector is found during the
command execution. When the Erase Error bit is set to a 1 this bit can be reset to 0 with the Clear Status Register (CLSR)
command. This is a read-only bit and is not affected by the WRR command.
Block Protection (BP2, BP1, BP0) SR1[4:2]: These bits define the main flash array area to be software-protected against program
and erase commands. The BP bits are either volatile or non-volatile, depending on the state of the BP non-volatile bit (BPNV) in the
configuration register. When one or more of the BP bits is set to 1, the relevant memory area is protected against program and
erase. The Bulk Erase (BE) command can be executed only when the BP bits are cleared to 0’s. See Section 8.3 Block Protection
on page 59 for a description of how the BP bit values select the memory array area protected. The BP bits have the same non-
volatile endurance as the main flash array.
Table 23. Status Register 1 (SR1)
Bits Field
Name Function Type Default State Description
7 SRWD Status Register
Write Disable Non-Volatile 0
1 = Locks state of SRWD, BP, and
configuration register bits when WP# is
LOW by ignoring WRR command
0 = No protection, even when WP# is LOW
6 P_ERR Programming
Error Occurred Volatile, Read only 0 1 = Error occurred.
0 = No Error
5 E_ERR Erase Error
Occurred Volatile, Read only 0 1 = Error occurred
0 = No Error
4 BP2
Block Protection
Volatile if CR1[3]=1,
Non-Volatile if
CR1[3]=0
1 if CR1[3]=1,
0 when shipped from
Cypress
Protects selected range of sectors (Block)
from Program or Erase
3 BP1
2 BP0
1 WEL Write Enable
Latch Volatile 0
1 = Device accepts Write Registers (WRR),
program or erase commands
0 = Device ignores Write Registers (WRR),
program or erase commands
This bit is not affected by WRR, only WREN
and WRDI commands affect this bit
0 WIP Write in Prog-
ress Volatile, Read only 0
1 = Device Busy, a Write Registers (WRR),
program, erase or other operation is in
progress
0 = Ready Device is in standby mode and
can accept commands
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Write Enable Latch (WEL) SR1[1]: The WEL bit must be set to 1 to enable program, write, or erase operations as a means to
provide protection against inadvertent changes to memory or register values. The Write Enable (WREN) command execution sets
the Write Enable Latch to a 1 to allow any program, erase, or write commands to execute afterwards. The Write Disable (WRDI)
command can be used to set the Write Enable Latch to a 0 to prevent all program, erase, and write commands from execution. The
WEL bit is cleared to 0 at the end of any successful program, write, or erase operation. Following a failed operation, the WEL bit may
remain set and should be cleared with a WRDI command following a CLSR command. After a power down/power up sequence,
hardware reset, or software reset, the Write Enable Latch is set to a 0 The WRR command does not affect this bit.
Write In Progress (WIP) SR1[0]: Indicates whether the device is performing a program, write, erase operation, or any other
operation, during which a new operation command will be ignored. When the bit is set to a 1 the device is busy performing an
operation. While WIP is 1, only Read Status (RDSR1 or RDSR2), Erase Suspend (ERSP), Program Suspend (PGSP), Clear Status
Register (CLSR), and Software Reset (RESET) commands may be accepted. ERSP and PGSP will only be accepted if memory
array erase or program operations are in progress. The status register E_ERR and P_ERR bits are updated while WIP = 1. When
P_ERR or E_ERR bits are set to one, the WIP bit will remain set to one indicating the device remains busy and unable to receive
new operation commands. A Clear Status Register (CLSR) command must be received to return the device to standby mode. When
the WIP bit is cleared to 0 no operation is in progress. This is a read-only bit.
7.5.2 Configuration Register 1 (CR1)
Related Commands: Read Configuration Register (RDCR 35h), Write Registers (WRR 01h). The Configuration Register bits can be
changed using the WRR command with sixteen input cycles.
The configuration register controls certain interface and data protection functions.
Latency Code (LC) CR1[7:6]: The Latency Code selects the number of mode and dummy cycles between the end of address and
the start of read data output for all read commands.
Some read commands send mode bits following the address to indicate that the next command will be of the same type with an
implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte, only a new address and
mode bits. This reduces the time needed to send each command when the same command type is repeated in a sequence of
commands.
Dummy cycles provide additional latency that is needed to complete the initial read access of the flash array before data can be
returned to the host system. Some read commands require additional latency cycles as the SCK frequency is increased.
Table 24. Configuration Register 1(CR1)
Bits Field Name Function Type Default
State Description
7 LC1
Latency Code Non-Volatile
0 Selects number of initial read latency cycles
See Latency Code Tables
(Table 25 through Table 28)
6 LC0 0
5 TBPROT Configures Start of
Block Protection OTP 0 1 = BP starts at bottom (Low address)
0 = BP starts at top (High address)
4 DNU DNU OTP 0 Do Not Use
3 BPNV Configures BP2-0 in
Status Register OTP 0 1 = Volatile
0 = Non-Volatile
2 TBPARM Configures Parame-
ter Sectors location OTP 0
1 = 4-KB physical sectors at top, (high address)
0 = 4-KB physical sectors at bottom (Low address)
RFU in uniform sector devices
1 QUAD Puts the device into
Quad I/O operation Non-Volatile 0 1 = Quad
0 = Dual or Serial
0 FREEZE
Lock current state of
BP2-0 bits in Status
Register, TBPROT
and TBPARM in
Configuration Regis-
ter, and OTP regions
Volatile 0 1 = Block Protection and OTP locked
0 = Block Protection and OTP un-locked
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Table 25 through Table 28 provide different latency settings that are configured by Cypress. The High Performance versus the
Enhanced High Performance settings are selected by the ordering part number.
Where mode or latency (dummy) cycles are shown in the tables as a dash, that read command is not supported at the frequency
shown. Read is supported only up to 50 MHz but the same latency value is assigned in each latency code and the command may be
used when the device is operated at 50 MHz with any latency code setting. Similarly, only the Fast Read command is supported
up to 133 MHz but the same 10b latency code is used for Fast Read up to 133 MHz and for the other dual and quad read commands
up to 104 MHz. It is not necessary to change the latency code from a higher to a lower frequency when operating at lower
frequencies where a particular command is supported. The latency code values for a higher frequency can be used for accesses at
lower frequencies.
The High Performance settings provide latency options that are the same or faster than alternate source SPI memories. These
settings provide mode bits only for the Quad I/O Read command.
The Enhanced High Performance settings similarly provide latency options the same or faster than additional alternate source SPI
memories and adds mode bits for the Dual I/O Read, DDR Fast Read, and DDR Dual I/O Read commands.
Read DDR Data Learning Pattern (DLP) bits may be placed within the dummy cycles immediately before the start of read data, if
there are 5 or more dummy cycles. See Section 9.4 Read Memory Array Commands on page 82 for more information on the DLP.
Table 25. Latency Codes for SDR High Performance
Freq.
(MHz) LC
Read Fast Read Read Dual Out Read Quad Out Dual I/O Read Quad I/O Read
(03h, 13h) (0Bh, 0Ch) (3Bh, 3Ch) (6Bh, 6Ch) (BBh, BCh) (EBh, ECh)
Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy
≤ 5011000000000421
≤ 8000 – –0808080424
≤ 9001 – –0808080524
≤10410 – –0808080625
≤133 10 – – 0 8 – – – – – – – –
Table 26. Latency Codes for DDR High Performance[45]
Freq.
(MHz) LC
DDR Fast Read DDR Dual I/O Read Read DDR Quad I/O
(0Dh, 0Eh) (BDh, BEh) (EDh, EEh)
Mode Dummy Mode Dummy Mode Dummy
≤ 5011040413
≤ 6600050616
≤ 6601060717
≤ 6610070818
Note
45. When using DDR I/O commands with the Data Learning Pattern (DLP) enabled, a Latency Code that provides 5 or more dummy cycles should be selected to allow
1 cycle of additional time for the host to stop driving before the memory starts driving the 4 cycle DLP. It is recommended to use LC 10 for DDR Fast Read, LC 01 for
DDR Dual IO Read, and LC 00 for DDR Quad IO Read, if the Data Learning Pattern (DLP) for DDR is used.
Table 27. Latency Codes for SDR Enhanced High Performance
Freq.
(MHz) LC
Read Fast Read Read Dual Out Read Quad Out Dual I/O Read Quad I/O Read
(03h, 13h) (0Bh, 0Ch) (3Bh, 3Ch) (6Bh, 6Ch) (BBh, BCh) (EBh, ECh)
Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy Mode Dummy
≤ 5011000000004021
≤ 8000 – –0808084024
≤ 9001 – –0808084124
≤10410 – –0808084225
≤133 10 – – 0 8 – – – – – – – –
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Top or Bottom Protection (TBPROT) CR1[5]: This bit defines the operation of the Block Protection bits BP2, BP1, and BP0 in the
Status Register. As described in the status register section, the BP2-0 bits allow the user to optionally protect a portion of the array,
ranging from 1/64, 1/4, 1/2, etc., up to the entire array. When TBPROT is set to a 0 the Block Protection is defined to start from the
top (maximum address) of the array. When TBPROT is set to a 1 the Block Protection is defined to start from the bottom (zero
address) of the array. The TBPROT bit is OTP and set to a 0 when shipped from Cypress. If TBPROT is programmed to 1, an
attempt to change it back to 0 will fail and set the Program Error bit (P_ERR in SR1[6]).
The desired state of TBPROT must be selected during the initial configuration of the device during system manufacture; before the
first program or erase operation on the main flash array. TBPROT must not be programmed after programming or erasing is done in
the main flash array.
CR1[4]: Reserved for Future Use
Block Protection Non-Volatile (BPNV) CR1[3]: The BPNV bit defines whether or not the BP2-0 bits in the Status Register are
volatile or non-volatile. The BPNV bit is OTP and cleared to a0 with the BP bits cleared to 000 when shipped from Cypress. When
BPNV is set to a 0 the BP2-0 bits in the Status Register are non-volatile. When BPNV is set to a 1 the BP2-0 bits in the Status
Register are volatile and will be reset to binary 111 after POR, hardware reset, or command reset. If BPNV is programmed to 1, an
attempt to change it back to 0 will fail and set the Program Error bit (P_ERR in SR1[6]).
TBPARM CR1[2]: TBPARM defines the logical location of the parameter block. The parameter block consists of thirty-two 4-KB
small sectors (SMS), which replace two 64-KB sectors. When TBPARM is set to a 1 the parameter block is in the top of the memory
array address space. When TBPARM is set to a 0 the parameter block is at the Bottom of the array. TBPARM is OTP and set to a 0
when it ships from Cypress. If TBPARM is programmed to 1, an attempt to change it back to 0 will fail and set the Program Error bit
(P_ERR in SR1[6]).
The desired state of TBPARM must be selected during the initial configuration of the device during system manufacture; before the
first program or erase operation on the main flash array. TBPARM must not be programmed after programming or erasing is done in
the main flash array.
TBPROT can be set or cleared independent of the TBPARM bit. Therefore, the user can elect to store parameter information from
the bottom of the array and protect boot code starting at the top of the array, and vice versa. Or the user can select to store and
protect the parameter information starting from the top or bottom together.
When the memory array is logically configured as uniform 256-KB sectors, the TBPARM bit is Reserved for Future Use (RFU) and
has no effect because all sectors are uniform size.
Quad Data Width (QUAD) CR1[1]: When set to 1, this bit switches the data width of the device to 4 bit - Quad mode. That is, WP#
becomes IO2 and HOLD# becomes IO3. The WP# and HOLD# inputs are not monitored for their normal functions and are internally
set to HIGH (inactive). The commands for Serial, Dual Output, and Dual I/O Read still function normally but, there is no need to drive
WP# and Hold# inputs for those commands when switching between commands using different data path widths. The QUAD bit
must be set to one when using Read Quad Out, Quad I/O Read, Read DDR Quad I/O, and Quad Page Program commands. The
QUAD bit is non-volatile.
Table 28. Latency Codes for DDR Enhanced High Performance[46]
Freq.
(MHz) LC
DDR Fast Read DDR Dual I/O Read Read DDR Quad I/O
(0Dh, 0Eh) (BDh, BEh) (EDh, EEh)
Mode Dummy Mode Dummy Mode Dummy
≤ 5011412213
≤ 6600422416
≤ 6601442517
≤ 6610452618
≤ 8000422416
≤ 8001442517
≤ 8010452618
Note
46. When using DDR I/O commands with the Data Learning Pattern (DLP) enabled, a Latency Code that provides 5 or more dummy cycles should be selected to allow
1 cycle of additional time for the host to stop driving before the memory starts driving the 4 cycle DLP. It is recommended to use LC 10 for DDR Fast Read, LC 01 for
DDR Dual IO Read, and LC 00 for DDR Quad IO Read, if the Data Learning Pattern (DLP) for DDR is used.
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Freeze Protection (FREEZE) CR1[0]: The Freeze Bit, when set to 1, locks the current state of the BP2-0 bits in Status Register, the
TBPROT and TBPARM bits in the Configuration Register, and the OTP address space. This prevents writing, programming, or
erasing these areas. As long as the FREEZE bit remains cleared to logic 0 the other bits of the Configuration Register, including
FREEZE, are writable, and the OTP address space is programmable. Once the FREEZE bit has been written to a logic 1 it can only
be cleared to a logic 0 by a power-off to power-on cycle or a hardware reset. Software reset will not affect the state of the FREEZE
bit. The FREEZE bit is volatile and the default state of FREEZE after power-on is 0. The FREEZE bit can be set in parallel with
updating other values in CR1 by a single WRR command.
7.5.3 Status Register 2 (SR2)
Related Commands: Read Status Register 2 (RDSR2 07h).
Erase Suspend (ES) SR2[1]: The Erase Suspend bit is used to determine when the device is in Erase Suspend mode. This is a
status bit that cannot be written. When Erase Suspend bit is set to 1, the device is in erase suspend mode. When Erase Suspend bit
is cleared to 0, the device is not in erase suspend mode. Refer to Erase Suspend and Resume Commands (75h) (7Ah) for details
about the Erase Suspend/Resume commands.
Program Suspend (PS) SR2[0]: The Program Suspend bit is used to determine when the device is in Program Suspend mode.
This is a status bit that cannot be written. When Program Suspend bit is set to 1, the device is in program suspend mode. When the
Program Suspend bit is cleared to 0, the device is not in program suspend mode. Refer to Section 9.5.4 Program Suspend (PGSP
85h) and Resume (PGRS 8Ah) on page 104 for details.
7.5.4 AutoBoot Register
Related Commands: AutoBoot Read (ABRD 14h) and AutoBoot Write (ABWR 15h).
The AutoBoot Register provides a means to automatically read boot code as part of the power-on reset, hardware reset, or software
reset process.
Table 29. Status Register 2 (SR2)
Bits Field Name Function Type Default State Description
7 RFU Reserved – 0 Reserved for Future Use
6 RFU Reserved – 0 Reserved for Future Use
5 RFU Reserved – 0 Reserved for Future Use
4 RFU Reserved – 0 Reserved for Future Use
3 RFU Reserved – 0 Reserved for Future Use
2 RFU Reserved – 0 Reserved for Future Use
1 ES Erase Suspend Volatile, Read only 0 1 = In erase suspend mode
0 = Not in erase suspend mode
0 PS Program Sus-
pend Volatile, Read only 0 1 = In program suspend mode
0 = Not in program suspend mode
Table 30. AutoBoot Register
Bits Field Name Function Type Default State Description
31 to 9 ABSA AutoBoot Start
Address Non-Volatile 000000h 512 byte boundary address for the start of
boot code access
8 to 1 ABSD AutoBoot Start
Delay Non-Volatile 00h
Number of initial delay cycles between
CS# going LOW and the first bit of boot
code being transferred
0 ABE AutoBoot Enable Non-Volatile 0 1 = AutoBoot is enabled
0 = AutoBoot is not enabled
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7.5.5 Bank Address Register
Related Commands: Bank Register Access (BRAC B9h), Write Register (WRR 01h), Bank Register Read (BRRD 16h) and Bank
Register Write (BRWR 17h).
The Bank Address register supplies additional high order bits of the main flash array byte boundary address for legacy commands
that supply only the low order 24 bits of address. The Bank Address is used as the high bits of address (above A23) for all 3-byte
address commands when EXTADD=0. The Bank Address is not used when EXTADD = 1 and traditional 3-byte address commands
are instead required to provide all four bytes of address.
Extended Address (EXTADD) BAR[7]: EXTADD controls the address field size for legacy SPI commands. By default (power up
reset, hardware reset, and software reset), it is cleared to 0 for 3 bytes (24 bits) of address. When set to 1, the legacy commands will
require 4 bytes (32 bits) for the address field. This is a volatile bit.
7.5.6 ECC Status Register (ECCSR)
Related Commands: ECC Read (ECCRD 18h). ECCSR does not have user programmable non-volatile bits. All defined bits are
volatile read only status. The default state of these bits are set by hardware. See Section 9.5.1.1 Automatic ECC on page 98.
The status of ECC in each ECC unit is provided by the 8-bit ECC Status Register (ECCSR). The ECC Register Read command is
written followed by an ECC unit address. The contents of the status register then indicates, for the selected ECC unit, whether there
is an error in the ECC unit eight bit error correction code, the ECC unit of 16 Bytes of data, or that ECC is disabled for that ECC unit.
ECCSR[2] = 1 indicates an error was corrected in the ECC. ECCSR[1] = 1 indicates an error was corrected in the ECC unit data.
ECCSR[0] = 1 indicates the ECC is disabled. The default state of “0” for all these bits indicates no failures and ECC is enabled.
ECCSR[7:3] are reserved. These have undefined high or low values that can change from one ECC status read to another. These
bits should be treated as “don’t care” and ignored by any software reading status.
Table 31. Bank Address Register (BAR)
Bits Field Name Function Type Default State Description
7 EXTADD Extended Address
Enable Volatile 0b
1 = 4-byte (32-bits) addressing required from command.
0 = 3-byte (24-bits) addressing from command + Bank
Address
6 to 1 RFU Reserved Volatile 00000b Reserved for Future Use
0 BA24 Bank Address Volatile 0 A24 for 256-Mb device, RFU for lower density device
Table 32. ECC Status Register (ECCSR)
Bits Field Name Function Type Default
State Description
7 to 3 RFU Reserved 0 Reserved for Future Use
2 EECC Error in ECC Volatile, Read only 0
1 = Single Bit Error found in the ECC unit eight
bit error correction code
0 = No error.
1 EECCD Error in ECC unit
data Volatile, Read only 0
1 = Single Bit Error corrected in ECC unit
data.
0 = No error.
0 ECCDI ECC Disabled Volatile, Read only 0 1 = ECC is disabled in the selected ECC unit.
0 = ECC is enabled in the selected ECC unit.
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7.5.7 ASP Register (ASPR)
Related Commands: ASP Read (ASPRD 2Bh) and ASP Program (ASPP 2Fh).
The ASP register is a 16-bit OTP memory location used to permanently configure the behavior of Advanced Sector Protection (ASP)
features.
Reserved for Future Use (RFU) ASPR[15:3, 0].
Password Protection Mode Lock Bit (PWDMLB) ASPR[2]: When programmed to 0, the Password Protection Mode is
permanently selected.
Persistent Protection Mode Lock Bit (PSTMLB) ASPR[1]: When programmed to 0, the Persistent Protection Mode is
permanently selected. PWDMLB and PSTMLB are mutually exclusive, only one may be programmed to zero.
7.5.8 Password Register (PASS)
Related Commands: Password Read (PASSRD E7h) and Password Program (PASSP E8h).
7.5.9 PPB Lock Register (PPBL)
Related Commands: PPB Lock Read (PLBRD A7h, PLBWR A6h).
Table 33. ASP Register (ASPR)
Bits Field Name Function Type Default
State Description
15 to 9 RFU Reserved OTP 1 Reserved for Future Use
8 RFU Reserved OTP Note [47] Reserved for Future Use
7 RFU Reserved OTP Reserved for Future Use
6 RFU Reserved OTP 1 Reserved for Future Use
5 RFU Reserved OTP
Note [47]
Reserved for Future Use
4 RFU Reserved OTP Reserved for Future Use
3 RFU Reserved OTP Reserved for Future Use
2 PWDMLB Password Protection
Mode Lock Bit OTP 1 0 = Password Protection Mode permanently enabled.
1 = Password Protection Mode not permanently enabled.
1 PSTMLB Persistent Protection
Mode Lock Bit OTP 1 0 = Persistent Protection Mode permanently enabled.
1 = Persistent Protection Mode not permanently enabled.
0 RFU Reserved OTP 1 Reserved for Future Use
Note
47. Default value depends on ordering part number, see Section 11.5 Initial Delivery State on page 139.
Table 34. Password Register (PASS)
Bits Field
Name Function Type Default State Description
63 to 0 PWD Hidden Password OTP FFFFFFFF-
FFFFFFFFh
Non-volatile OTP storage of 64 bit password. The
password is no longer readable after the password
protection mode is selected by programming ASP register
bit 2 to zero.
Table 35. PPB Lock Register (PPBL)
Bits Field Name Function Type Default State Description
7 to 1 RFU Reserved Volatile 00h Reserved for Future Use
0 PPBLOCK Protect PPB
Array Volatile Persistent Protection Mode = 1
Password Protection Mode = 0
0 = PPB array protected until next power cycle or
hardware reset
1 = PPB array may be programmed or erased.
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7.5.10 PPB Access Register (PPBAR)
Related Commands: PPB Read (PPBRD E2h)
7.5.11 DYB Access Register (DYBAR)
Related Commands: DYB Read (DYBRD E0h) and DYB Program (DYBP E1h).
7.5.12 SPI DDR Data Learning Registers
Related Commands: Program NVDLR (PNVDLR 43h), Write VDLR (WVDLR 4Ah), Data Learning Pattern Read (DLPRD 41h).
The Data Learning Pattern (DLP) resides in an 8-bit Non-Volatile Data Learning Register (NVDLR) as well as an 8-bit Volatile Data
Learning Register (VDLR). When shipped from Cypress, the NVDLR value is 00h. Once programmed, the NVDLR cannot be
reprogrammed or erased; a copy of the data pattern in the NVDLR will also be written to the VDLR. The VDLR can be written to at
any time, but on reset or power cycles the data pattern will revert back to what is in the NVDLR. During the learning phase described
in the SPI DDR modes, the DLP will come from the VDLR. Each IO will output the same DLP value for every clock edge. For
example, if the DLP is 34h (or binary 00110100) then during the first clock edge all IO’s will output 0; subsequently, the 2nd clock
edge all I/O’s will output 0, the 3rd will output 1, etc.
When the VDLR value is 00h, no preamble data pattern is presented during the dummy phase in the DDR commands.
Table 36. PPB Access Register (PPBAR)
Bits Field Name Function Type Default
State Description
7 to 0 PPB Read or Program
per sector PPB Non-volatile FFh
00h = PPB for the sector addressed by the PPBRD or
PPBP command is programmed to 0, protecting that
sector from program or erase operations.
FFh = PPB for the sector addressed by the PPBRD or
PPBP command is erased to 1, not protecting that
sector from program or erase operations.
Table 37. DYB Access Register (DYBAR)
Bits Field Name Function Type Default State Description
7 to 0 DYB Read or Write
per sector DYB Volatile FFh
00h = DYB for the sector addressed by the DYBRD or DYBP
command is cleared to 0, protecting that sector from program or
erase operations.
FFh = DYB for the sector addressed by the DYBRD or DYBP
command is set to 1, not protecting that sector from program or
erase operations.
Table 38. Non-Volatile Data Learning Register (NVDLR)
Bits Field Name Function Type Default State Description
7 to 0 NVDLP
Non-Volatile
Data Learning
Pattern
OTP 00h
OTP value that may be transferred to the host during DDR read
command latency (dummy) cycles to provide a training pattern to
help the host more accurately center the data capture point in
the received data bits.
Table 39. Volatile Data Learning Register (NVDLR)
Bits Field Name Function Type Default State Description
7 to 0 VDLP Volatile Data
Learning Pattern Volatile
Takes the value of
NVDLR during
POR or Reset
Volatile copy of the NVDLP used to enable and deliver
the Data Learning Pattern (DLP) to the outputs. The
VDLP may be changed by the host during system
operation.
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8. Data Protection
8.1 Secure Silicon Region (OTP)
The device has a 1024-byte One Time Program (OTP) address space that is separate from the main flash array. The OTP area is
divided into 32, individually lockable, 32-byte aligned and length regions.
The OTP memory space is intended for increased system security. OTP values can “mate” a flash component with the system CPU/
ASIC to prevent device substitution. See Section 7.4 OTP Address Space on page 47, Section 9.7 One Time Program Array
Commands on page 110, and Section 9.7.2 OTP Read (OTPR 4Bh) on page 111.
8.1.1 Reading OTP Memory Space
The OTP Read command uses the same protocol as Fast Read. OTP Read operations outside the valid 1-KB OTP address range
will yield indeterminate data.
8.1.2 Programming OTP Memory Space
The protocol of the OTP programming command is the same as Page Program. The OTP Program command can be issued multiple
times to any given OTP address, but this address space can never be erased.
Automatic ECC is programmed on the first programming operation to each 16-byte region. Programming within a 16-byte region
more than once disables the ECC. It is recommended to program each 16-byte portion of each 32-byte region once so that ECC
remains enabled to provide the best data integrity.
The valid address range for OTP Program is depicted in Figure 47 on page 48. OTP Program operations outside the valid OTP
address range will be ignored and the WEL in SR1 will remain HIGH (set to 1). OTP Program operations while FREEZE = 1 will fail
with P_ERR in SR1 set to 1.
8.1.3 Cypress Programmed Random Number
Cypress standard practice is to program the low order 16 bytes of the OTP memory space (locations 0x0 to 0xF) with a 128-bit
random number using the Linear Congruential Random Number Method. The seed value for the algorithm is a random number
concatenated with the day and time of tester insertion.
8.1.4 Lock Bytes
The LSb of each Lock byte protects the lowest address region related to the byte, the MSb protects the highest address region
related to the byte. The next higher address byte similarly protects the next higher eight regions. The LSb bit of the lowest address
Lock Byte protects the higher address 16 bytes of the lowest address region. In other words, the LSb of location 0x10 protects all the
Lock Bytes and RFU bytes in the lowest address region from further programming. See Section 7.4 OTP Address Space
on page 47.
8.2 Write Enable Command
The Write Enable (WREN) command must be written prior to any command that modifies non-volatile data. The WREN command
sets the Write Enable Latch (WEL) bit. The WEL bit is cleared to 0 (disables writes) during power-up, hardware reset, or after the
device completes the following commands:
■Reset
■Page Program (PP)
■Sector Erase (SE)
■Bulk Erase (BE)
■Write Disable (WRDI)
■Write Registers (WRR)
■Quad-input Page Programming (QPP)
■OTP Byte Programming (OTPP)
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8.3 Block Protection
The Block Protect bits (Status Register bits BP2, BP1, BP0) in combination with the Configuration Register TBPROT bit can be used
to protect an address range of the main flash array from program and erase operations. The size of the range is determined by the
value of the BP bits and the upper or lower starting point of the range is selected by the TBPROT bit of the configuration register.
When Block Protection is enabled (i.e., any BP2-0 are set to 1), Advanced Sector Protection (ASP) can still be used to protect
sectors not protected by the Block Protection scheme. In the case that both ASP and Block Protection are used on the same sector
the logical OR of ASP and Block Protection related to the sector is used. Recommendation: ASP and Block Protection should not be
used concurrently. Use one or the other, but not both.
8.3.1 Freeze Bit
Bit 0 of the Configuration Register is the FREEZE bit. The FREEZE bit locks the BP2-0 bits in Status Register 1 and the TBPROT bit
in the Configuration Register to their value at the time the FREEZE bit is set to 1. Once the FREEZE bit has been written to a logic 1
it cannot be cleared to a logic 0 until a power-on-reset is executed. As long as the FREEZE bit is cleared to logic 0 the status register
BP bits and the TBPROT bit of the Configuration Register are writable. The FREEZE bit also protects the entire OTP memory space
from programming when set to 1. Any attempt to change the BP bits with the WRR command while FREEZE = 1 is ignored and no
error status is set.
8.3.2 Write Protect Signal
The Write Protect (WP#) input in combination with the Status Register Write Disable (SRWD) bit provide hardware input signal
controlled protection. When WP# is LOW and SRWD is set to ‘1’, the Status and Configuration register is protected from alteration.
This prevents disabling or changing the protection defined by the Block Protect bits.
Table 40. Upper Array Start of Protection (TBPROT = 0)
Status Register Content Protected Fraction
of Memory Array
Protected Memory (KB)
BP2 BP1 BP0 FL128S
128 Mb
FL256S
256 Mb
000None00
0 0 1 Upper 64th 256 512
0 1 0 Upper 32nd 512 1024
0 1 1 Upper 16th 1024 2048
1 0 0 Upper 8th 2048 4096
1 0 1 Upper 4th 4096 8192
1 1 0 Upper Half 8192 16384
1 1 1 All Sectors 16384 32768
Table 41. Lower Array Start of Protection (TBPROT = 1)
Status Register Content Protected Fraction
of Memory Array
Protected Memory (KB)
BP2 BP1 BP0 FL128S
128 Mb
FL256S
256 Mb
000None00
0 0 1 Lower 64th 256 512
0 1 0 Lower 32nd 512 1024
0 1 1 Lower 16th 1024 2048
1 0 0 Lower 8th 2048 4096
1 0 1 Lower 4th 4096 8192
1 1 0 Lower Half 8192 16384
1 1 1 All Sectors 16384 32768
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8.4 Advanced Sector Protection
Advanced Sector Protection (ASP) is the name used for a set of independent hardware and software methods used to disable or
enable programming or erase operations, individually, in any or all sectors. An overview of these methods is shown in Figure 48
on page 60.
Block Protection and ASP protection settings for each sector are logically OR’d to define the protection for each sector, i.e. if either
mechanism is protecting a sector the sector cannot be programmed or erased. Refer to Section 8.3 Block Protection on page 59 for
full details of the BP2-0 bits.
Figure 48. Advanced Sector Protection Overview
Every main flash array sector has a non-volatile (PPB) and a volatile (DYB) protection bit associated with it. When either bit is 0, the
sector is protected from program and erase operations.
The PPB bits are protected from program and erase when the PPB Lock bit is 0. There are two methods for managing the state of
the PPB Lock bit, Persistent Protection and Password Protection.
The Persistent Protection method sets the PPB Lock bit to 1 during POR, or Hardware Reset so that the PPB bits are unprotected by
a device reset. There is a command to clear the PPB Lock bit to 0 to protect the PPB. There is no command in the Persistent
Protection method to set the PPB Lock bit to 1, therefore the PPB Lock bit will remain at 0 until the next power-off or hardware reset.
The Persistent Protection method allows boot code the option of changing sector protection by programming or erasing the PPB,
then protecting the PPB from further change for the remainder of normal system operation by clearing the PPB Lock bit to 0. This is
sometimes called Boot-code controlled sector protection.
The Password method clears the PPB Lock bit to 0 during POR, or Hardware Reset to protect the PPB. A 64-bit password may be
permanently programmed and hidden for the password method. A command can be used to provide a password for comparison with
the hidden password. If the password matches, the PPB Lock bit is set to 1 to unprotect the PPB. A command can be used to clear
the PPB Lock bit to 0. This method requires use of a password to control PPB protection.
The selection of the PPB Lock bit management method is made by programming OTP bits in the ASP Register so as to permanently
select the method used.
ASP Register
One Time Programmable
Password Method
(ASPR[2]=0)
Persistent Method
(ASPR[1]=0)
64
-
bit Password
(One Time Protect)
PBB Lock Bit
‘0’ = PPBs locked
Sector 0
Memory Array
Sector N
-
2
Sector 1
Sector 2
Sector N
-
1
Sector N
PPB 0
Persistent
Protection Bit
(PPB)
PPB N
-
2
PPB 1
PPB 2
PPB N
-
1
PPB N
DYB 0
Dynamic
Protection Bit
(DYB)
DYB N
-
2
DYB 1
DYB 2
DYB N
-
1
DYB N
2)
3) DYB are volatile bits
‘1’=PPBs unlocked
-
Sector 0
Memory Array
Sector N
-
2
Sector 1
Sector 2
Sector N
-
1
Sector N
1) N = Highest Address Sector,
a sector is protected if its PPB =’0’
or its DYB = ‘0’
PPB 0
Persistent
Protection Bits
(PPB)
PPB N
-
2
PPB 1
PPB 2
PPB N
-
1
PPB N
DYB 0
Dynamic
Protection Bits
(DYB)
DYB N
-
2
DYB 1
DYB 2
DYB N
-
1
DYB N
PPB are programmed individually
but erased as a group
4) PPB Lock bit is volatile and
defaults to ‘1’ (persistent mode), or
‘0’ (password mode) upon reset
5) PPB Lock = ‘0’ locks all PPBs
to their current state
6) Password Method requires a
password to set PPB Lock to ‘1’
to enable program or erase of
PPB bits
7) Persistent Method only allows
PPB Lock to be cleared to ‘0’ to
prevent program or erase of PPB
bits. Power off or hardware reset
required to set PPB Lock to ‘1’
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8.4.1 ASP Register
The ASP register is used to permanently configure the behavior of Advanced Sector Protection (ASP) features (see Table 33
on page 56).
As shipped from the factory, all devices default ASP to the Persistent Protection mode, with all sectors unprotected, when power is
applied. The device programmer or host system must then choose which sector protection method to use. Programming either of the,
one-time programmable, Protection Mode Lock Bits, locks the part permanently in the selected mode:
■ASPR[2:1] = 11 = No ASP mode selected, Persistent Protection Mode is the default.
■ASPR[2:1] = 10 = Persistent Protection Mode permanently selected.
■ASPR[2:1] = 01 = Password Protection Mode permanently selected.
■ASPR[2:1] = 00 = Illegal condition, attempting to program both bits to zero results in a programming failure.
■ASP register programming rules:
■If the password mode is chosen, the password must be programmed prior to setting the Protection Mode Lock Bits.
■Once the Protection Mode is selected, the Protection Mode Lock Bits are permanently protected from programming and no further
changes to the ASP register is allowed.
The programming time of the ASP Register is the same as the typical page programming time. The system can determine the status
of the ASP register programming operation by reading the WIP bit in the Status Register. See Section 7.5.1 Status Register 1 (SR1)
on page 50 for information on WIP.
After selecting a sector protection method, each sector can operate in each of the following states:
■Dynamically Locked — A sector is protected and can be changed by a simple command.
■Persistently Locked — A sector is protected and cannot be changed if its PPB Bit is 0.
■Unlocked — The sector is unprotected and can be changed by a simple command.
8.4.2 Persistent Protection Bits
The Persistent Protection Bits (PPB) are located in a separate nonvolatile flash array. One of the PPB bits is related to each sector.
When a PPB is 0, its related sector is protected from program and erase operations. The PPB are programmed individually but must
be erased as a group, similar to the way individual words may be programmed in the main array but an entire sector must be erased
at the same time. The PPB have the same program and erase endurance as the main flash memory array. Preprogramming and
verification prior to erasure are handled by the device.
Programming a PPB bit requires the typical page programming time. Erasing all the PPBs requires typical sector erase time. During
PPB bit programming and PPB bit erasing, status is available by reading the Status register. Reading of a PPB bit requires the initial
access time of the device.
Notes:
Each PPB is individually programmed to 0 and all are erased to 1 in parallel.
If the PPB Lock bit is 0, the PPB Program or PPB Erase command does not execute and fails without programming or erasing the
PPB.
The state of the PPB for a given sector can be verified by using the PPB Read command.
8.4.3 Dynamic Protection Bits
Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYB only control the protection for
sectors that have their PPB set to 1. By issuing the DYB Write command, a DYB is cleared to 0 or set to 1, thus placing each sector
in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes,
yet does not prevent the easy removal of protection when changes are needed. The DYBs can be set or cleared as often as needed
as they are volatile bits.
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8.4.4 PPB Lock Bit (PPBL[0])
The PPB Lock Bit is a volatile bit for protecting all PPB bits. When cleared to 0, it locks all PPBs and when set to 1, it allows the
PPBs to be changed.
The PLBWR command is used to clear the PPB Lock bit to 0. The PPB Lock Bit must be cleared to 0 only after all the PPBs are
configured to the desired settings.
In Persistent Protection mode, the PPB Lock is set to 1 during POR or a hardware reset. When cleared to 0, no software command
sequence can set the PPB Lock bit to 1, only another hardware reset or power-up can set the PPB Lock bit.
In the Password Protection mode, the PPB Lock bit is cleared to 0 during POR or a hardware reset. The PPB Lock bit can only be
set to 1 by the Password Unlock command.
8.4.5 Sector Protection States Summary
Each sector can be in one of the following protection states:
■Unlocked — The sector is unprotected and protection can be changed by a simple command. The protection state defaults to
unprotected after a power cycle, software reset, or hardware reset.
■Dynamically Locked — A sector is protected and protection can be changed by a simple command. The protection state is not saved
across a power cycle or reset.
■Persistently Locked — A sector is protected and protection can only be changed if the PPB Lock Bit is set to 1. The protection state
is non-volatile and saved across a power cycle or reset. Changing the protection state requires programming and or erase of the
PPB bits
8.4.6 Persistent Protection Mode
The Persistent Protection method sets the PPB Lock bit to 1 during POR or Hardware Reset so that the PPB bits are unprotected by
a device hardware reset. Software reset does not affect the PPB Lock bit. The PLBWR command can clear the PPB Lock bit to 0 to
protect the PPB. There is no command to set the PPB Lock bit therefore the PPB Lock bit will remain at 0 until the next power-off or
hardware reset.
Table 42. Sector Protection States
Protection Bit Values Sector State
PPB Lock PPB DYB
1 1 1 Unprotected – PPB and DYB are changeable
1 1 0 Protected – PPB and DYB are changeable
1 0 1 Protected – PPB and DYB are changeable
1 0 0 Protected – PPB and DYB are changeable
0 1 1 Unprotected – PPB not changeable, DYB is changeable
0 1 0 Protected – PPB not changeable, DYB is changeable
0 0 1 Protected – PPB not changeable, DYB is changeable
0 0 0 Protected – PPB not changeable, DYB is changeable
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8.4.7 Password Protection Mode
Password Protection Mode allows an even higher level of security than the Persistent Sector Protection Mode, by requiring a 64-bit
password for unlocking the PPB Lock bit. In addition to this password requirement, after power up and hardware reset, the PPB Lock
bit is cleared to 0 to ensure protection at power-up. Successful execution of the Password Unlock command by entering the entire
password clears the PPB Lock bit, allowing for sector PPB modifications.
Password Protection Notes:
■Once the Password is programmed and verified, the Password Mode (ASPR[2]=0) must be set in order to prevent reading the
password.
■The Password Program Command is only capable of programming ‘0’s. Programming a 1 after a cell is programmed as a 0 results
in the cell left as a 0 with no programming error set.
■The password is all 1’s when shipped from Cypress. It is located in its own memory space and is accessible through the use of the
Password Program and Password Read commands.
■All 64-bit password combinations are valid as a password.
■The Password Mode, once programmed, prevents reading the 64-bit password and further password programming. All further
program and read commands to the password region are disabled and these commands are ignored. There is no means to verify
what the password is after the Password Mode Lock Bit is selected. Password verification is only allowed before selecting the
Password Protection mode.
■The Protection Mode Lock Bits are not erasable.
■The exact password must be entered in order for the unlocking function to occur. If the password unlock command provided password
does not match the hidden internal password, the unlock operation fails in the same manner as a programming operation on a
protected sector. The P_ERR bit is set to one and the WIP Bit remains set. In this case it is a failure to change the state of the PPB
Lock bit because it is still protected by the lack of a valid password.
■The Password Unlock command cannot be accepted any faster than once every 100 µs ± 20 µs. This makes it take an unreasonably
long time (58 million years) for a hacker to run through all the 64-bit combinations in an attempt to correctly match a password. The
Read Status Register 1 command may be used to read the WIP bit to determine when the device has completed the password
unlock command or is ready to accept a new password command. When a valid password is provided the password unlock command
does not insert the 100 µs delay before returning the WIP bit to zero.
■If the password is lost after selecting the Password Mode, there is no way to set the PPB Lock bit.
■ECC status may only be read from sectors that are readable. In read protection mode the addresses are forced to the boot sector
address. ECC status is shown in that sector while read protection mode is active.
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9. Commands
All communication between the host system and S25FL128S and S25FL256S memory devices is in the form of units called
commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands
may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the memory. All
instruction, address, and data information is transferred serially between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to the host serially on
SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be returned to the host as a
sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input/Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3.
Commands are structured as follows:
■Each command begins with an eight bit (byte) instruction.
■The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces in
the device. The address may be either a 24-bit or 32-bit byte boundary address.
■The Serial Peripheral Interface with Multiple IO provides the option for each transfer of address and data information to be done
one, two, or four bits in parallel. This enables a trade off between the number of signal connections (IO bus width) and the speed
of information transfer. If the host system can support a two or four bit wide IO bus the memory performance can be increased by
using the instructions that provide parallel two bit (dual) or parallel four bit (quad) transfers.
■The width of all transfers following the instruction are determined by the instruction sent.
■All single bits or parallel bit groups are transferred in most to least significant bit order.
■Some instructions send instruction modifier (mode) bits following the address to indicate that the next command will be of the same
type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte, only a new
address and mode bits. This reduces the time needed to send each command when the same command type is repeated in a
sequence of commands.
■The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before read
data is returned to the host.
■Read latency may be zero to several SCK cycles (also referred to as dummy cycles).
■All instruction, address, mode, and data information is transferred in byte granularity. Addresses are shifted into the device with the
most significant byte first. All data is transferred with the lowest address byte sent first. Following bytes of data are sent in lowest
to highest byte address order i.e. the byte address increments.
■All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded
operation. These are discussed in the individual command descriptions. While a program, erase, or write operation is in progress,
it is recommended to check that the Write-In Progress (WIP) bit is 0 before issuing most commands to the device, to ensure the
new command can be accepted.
■Depending on the command, the time for execution varies. A command to read status information from an executing command is
available to determine when the command completes execution and whether the command was successful.
■Although host software in some cases is used to directly control the SPI interface signals, the hardware interfaces of the host system
and the memory device generally handle the details of signal relationships and timing. For this reason, signal relationships and
timing are not covered in detail within this software interface focused section of the document. Instead, the focus is on the logical
sequence of bits transferred in each command rather than the signal timing and relationships. Following are some general signal
relationship descriptions to keep in mind. For additional information on the bit level format and signal timing relationships of
commands, see Section 3.2 Command Protocol on page 14.
❐The host always controls the Chip Select (CS#), Serial Clock (SCK), and Serial Input (SI) - SI for single bit wide transfers. The
memory drives Serial Output (SO) for single bit read transfers. The host and memory alternately drive the IO0-IO3 signals during
Dual and Quad transfers.
❐All commands begin with the host selecting the memory by driving CS# LOW before the first rising edge of SCK. CS# is kept LOW
throughout a command and when CS# is returned high the command ends. Generally, CS# remains LOW for 8-bit transfer multiples
to transfer byte granularity information. Some commands will not be accepted if CS# is returned HIGH not at an 8-bit boundary.
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9.1 Command Set Summary
9.1.1 Extended Addressing
To accommodate addressing above 128 Mb, there are three options:
1. New instructions are provided with 4-byte address, used to access up to 32 Gb of memory.
2. For backward compatibility to the 3-byte address instructions, the standard instructions can be used in conjunction with the EXTADD
Bit in the Bank Address Register (BAR[7]). By default BAR[7] is cleared to 0 (following power up and hardware reset), to enable
3-byte (24-bit) addressing. When set to 1, the legacy commands are changed to require 4 bytes (32 bits) for the address field. The
following instructions can be used in conjunction with EXTADD bit to switch from 3 bytes to 4 bytes of address field.
Instruction Name Description Code (Hex)
4FAST_READ Read Fast (4-byte Address) 0C
4READ Read (4-byte Address) 13
4DOR Read Dual Out (4-byte Address) 3C
4QOR Read Quad Out (4-byte Address) 6C
4DIOR Dual I/O Read (4-byte Address) BC
4QIOR Quad I/O Read (4-byte Address) EC
4DDRFR Read DDR Fast (4-byte Address) 0E
4DDRDIOR DDR Dual I/O Read (4-byte Address) BE
4DDRQIOR DDR Quad I/O Read (4-byte Address) EE
4PP Page Program (4-byte Address) 12
4QPP Quad Page Program (4-byte Address) 34
4P4E Parameter 4-KB Erase (4-byte Address) 21
4SE Erase 64/256 KB (4-byte Address) DC
Instruction Name Description Code (Hex)
READ Read (3-byte Address) 03
FAST_READ Read Fast (3-byte Address) 0B
DOR Read Dual Out (3-byte Address) 3B
QOR Read Quad Out (3-byte Address) 6B
DIOR Dual I/O Read (3-byte Address) BB
QIOR Quad I/O Read (3-byte Address) EB
DDRFR Read DDR Fast (3-byte Address) 0D
DDRDIOR DDR Dual I/O Read (3-byte Address) BD
DDRQIOR DDR Quad I/O Read (3-byte Address) ED
PP Page Program (3-byte Address) 02
QPP Quad Page Program (3-byte Address) 32
P4E Parameter 4-KB Erase (3-byte Address) 20
SE Erase 64 / 256 KB (3-byte Address) D8
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3. For backward compatibility to the 3-byte addressing, the standard instructions can be used in conjunction with the Bank Address
Register:
a. The Bank Address Register is used to switch between 128-Mb (16-MB) banks of memory, The standard 3-byte address selects
an address within the bank selected by the Bank Address Register.
i. The host system writes the Bank Address Register to access beyond the first 128 Mb of memory.
ii. This applies to read, erase, and program commands.
a. The Bank Register provides the high order (4th) byte of address, which is used to address the available memory at
addresses greater than 16 MB.
b. Bank Register bits are volatile.
i. On power up, the default is Bank0 (the lowest address 16 MB).
c. For Read, the device will continuously transfer out data until the end of the array.
i. There is no bank to bank delay.
ii. The Bank Address Register is not updated.
iii. The Bank Address Register value is used only for the initial address of an access.
Table 43. Bank Address Map
Bank Address Register Bits Bank Memory Array Address Range (Hex)
Bit 1 Bit 0
0 0 0 00000000 00FFFFFF
0 1 1 01000000 01FFFFFF
Table 44. S25FL128S and S25FL256S Command Set (sorted by function)
Function Command Name Command Description Instruction Value
(Hex)
Maximum Frequency
(MHz)
Read Device
Identification
READ_ID
(REMS) Read Electronic Manufacturer Signature 90 133
RDID Read ID (JEDEC Manufacturer ID and JEDEC CFI) 9F 133
RES Read Electronic Signature AB 50
Register Access
RDSR1 Read Status Register-1 05 133
RDSR2 Read Status Register-2 07 133
RDCR Read Configuration Register-1 35 133
WRR Write Register (Status-1, Configuration-1) 01 133
WRDI Write Disable 04 133
WREN Write Enable 06 133
CLSR Clear Status Register-1 - Erase/Prog. Fail Reset 30 133
ECCRD ECC Read (4-byte address) 18 133
ABRD AutoBoot Register Read 14 133 (QUAD=0)
104 (QUAD=1)
ABWR AutoBoot Register Write 15 133
BRRD Bank Register Read 16 133
BRWR Bank Register Write 17 133
BRAC Bank Register Access
(Legacy Command formerly used for Deep Power Down) B9 133
DLPRD Data Learning Pattern Read 41 133
PNVDLR Program NV Data Learning Register 43 133
WVDLR Write Volatile Data Learning Register 4A 133
Read Flash Array READ Read (3- or 4-byte address) 03 50
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Read Flash Array
4READ Read (4-byte address) 13 50
FAST_READ Fast Read (3- or 4-byte address) 0B 133
4FAST_READ Fast Read (4-byte address) 0C 133
DDRFR DDR Fast Read (3- or 4-byte address) 0D 80
4DDRFR DDR Fast Read (4-byte address) 0E 80
DOR Read Dual Out (3- or 4-byte address) 3B 104
4DOR Read Dual Out (4-byte address) 3C 104
QOR Read Quad Out (3- or 4-byte address) 6B 104
4QOR Read Quad Out (4-byte address) 6C 104
DIOR Dual I/O Read (3- or 4-byte address) BB 104
4DIOR Dual I/O Read (4-byte address) BC 104
DDRDIOR DDR Dual I/O Read (3- or 4-byte address) BD 80
4DDRDIOR DDR Dual I/O Read (4-byte address) BE 80
QIOR Quad I/O Read (3- or 4-byte address) EB 104
4QIOR Quad I/O Read (4-byte address) EC 104
DDRQIOR DDR Quad I/O Read (3- or 4-byte address) ED 80
4DDRQIOR DDR Quad I/O Read (4-byte address) EE 80
Program Flash
Array
PP Page Program (3- or 4-byte address) 02 133
4PP Page Program (4-byte address) 12 133
QPP Quad Page Program (3- or 4-byte address) 32 80
QPP Quad Page Program - Alternate instruction (3- or 4-byte
address) 38 80
4QPP Quad Page Program (4-byte address) 34 80
PGSP Program Suspend 85 133
PGRS Program Resume 8A 133
Erase Flash Array
P4E Parameter 4-KB, sector Erase (3- or 4-byte address) 20 133
4P4E Parameter 4-KB, sector Erase (4-byte address) 21 133
BE Bulk Erase 60 133
BE Bulk Erase (alternate command) C7 133
SE Erase 64 KB or 256 KB (3- or 4-byte address) D8 133
4SE Erase 64 KB or 256 KB (4-byte address) DC 133
ERSP Erase Suspend 75 133
ERRS Erase Resume 7A 133
One Time
Program Array
OTPP OTP Program 42 133
OTPR OTP Read 4B 133
Advanced Sector
Protection
DYBRD DYB Read E0 133
DYBWR DYB Write E1 133
PPBRD PPB Read E2 133
PPBP PPB Program E3 133
PPBE PPB Erase E4 133
ASPRD ASP Read 2B 133
ASPP ASP Program 2F 133
Table 44. S25FL128S and S25FL256S Command Set (sorted by function) (Continued)
Function Command Name Command Description Instruction Value
(Hex)
Maximum Frequency
(MHz)
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9.1.2 Read Device Identification
There are multiple commands to read information about the device manufacturer, device type, and device features. SPI memories
from different vendors have used different commands and formats for reading information about the memories. The S25FL128S and
S25FL256S devices support the three most common device information commands.
9.1.3 Register Read or Write
There are multiple registers for reporting embedded operation status or controlling device configuration options. There are
commands for reading or writing these registers. Registers contain both volatile and non-volatile bits. Non-volatile bits in registers
are automatically erased and programmed as a single (write) operation.
9.1.3.1 Monitoring Operation Status
The host system can determine when a write, program, erase, suspend or other embedded operation is complete by monitoring the
Write in Progress (WIP) bit in the Status Register. The Read from Status Register-1 command provides the state of the WIP bit. The
program error (P_ERR) and erase error (E_ERR) bits in the status register indicate whether the most recent program or erase
command has not completed successfully. When P_ERR or E_ERR bits are set to one, the WIP bit will remain set to one indicating
the device remains busy. Under this condition, only the CLSR, WRDI, RDSR1, RDSR2, and software RESET commands are valid
commands. A Clear Status Register (CLSR) followed by a Write Disable (WRDI) command must be sent to return the device to
standby state. CLSR clears the WIP, P_ERR, and E_ERR bits. WRDI clears the WEL bit. Alternatively, Hardware Reset, or Software
Reset (RESET) may be used to return the device to standby state.
9.1.3.2 Configuration
There are commands to read, write, and protect registers that control interface path width, interface timing, interface address length,
and some aspects of data protection.
Advanced Sector
Protection
PLBRD PPB Lock Bit Read A7 133
PLBWR PPB Lock Bit Write A6 133
PASSRD Password Read E7 133
PASSP Password Program E8 133
PASSU Password Unlock E9 133
Reset RESET Software Reset F0 133
MBR Mode Bit Reset FF 133
Reserved for
Future Use MPM Reserved for Multi-I/O-High Perf Mode (MPM) A3 133
RFU Reserved-18 Reserved 18 –
RFU Reserved-E5 Reserved E5 –
RFU Reserved-E6 Reserved E6 –
Table 44. S25FL128S and S25FL256S Command Set (sorted by function) (Continued)
Function Command Name Command Description Instruction Value
(Hex)
Maximum Frequency
(MHz)
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S25FL128S/S25FL256S
9.1.4 Read Flash Array
Data may be read from the memory starting at any byte boundary. Data bytes are sequentially read from incrementally higher byte
addresses until the host ends the data transfer by driving CS# input HIGH. If the byte address reaches the maximum address of the
memory array, the read will continue at address zero of the array.
There are several different read commands to specify different access latency and data path widths. Double Data Rate (DDR)
commands also define the address and data bit relationship to both SCK edges:
■The Read command provides a single address bit per SCK rising edge on the SI signal with read data returning a single bit per SCK
falling edge on the SO signal. This command has zero latency between the address and the returning data but is limited to a maximum
SCK rate of 50 MHz.
■Other read commands have a latency period between the address and returning data but can operate at higher SCK frequencies.
The latency depends on the configuration register latency code.
■The Fast Read command provides a single address bit per SCK rising edge on the SI signal with read data returning a single bit
per SCK falling edge on the SO signal and may operate up to 133 MHz.
■Dual or Quad Output read commands provide address a single bit per SCK rising edge on the SI / IO0 signal with read data returning
two bits, or four bits of data per SCK falling edge on the IO0-IO3 signals.
■Dual or Quad I/O Read commands provide address two bits or four bits per SCK rising edge with read data returning two bits, or
four bits of data per SCK falling edge on the IO0-IO3 signals.
■Fast (Single), Dual, or Quad Double Data Rate read commands provide address one bit, two bits or four bits per every SCK edge
with read data returning one bit, two bits, or four bits of data per every SCK edge on the IO0-IO3 signals. Double Data Rate (DDR)
operation is only supported for core and I/O voltages of 3 to 3.6V.
9.1.5 Program Flash Array
Programming data requires two commands: Write Enable (WREN), and Page Program (PP or QPP). The Page Program command
accepts from 1 byte up to 256 or 512 consecutive bytes of data (page) to be programmed in one operation. Programming means
that bits can either be left at 1, or programmed from 1 to 0. Changing bits from 0 to 1 requires an erase operation.
9.1.6 Erase Flash Array
The Sector Erase (SE) and Bulk Erase (BE) commands set all the bits in a sector or the entire memory array to 1. A bit needs to be
first erased to 1 before programming can change it to a 0. While bits can be individually programmed from a 1 to 0, erasing bits from
0 to 1 must be done on a sector-wide (SE) or array-wide (BE) level.
9.1.7 OTP, Block Protection, and Advanced Sector Protection
There are commands to read and program a separate One TIme Programmable (OTP) array for permanent data such as a serial
number. There are commands to control a contiguous group (block) of flash memory array sectors that are protected from program
and erase operations. There are commands to control which individual flash memory array sectors are protected from program and
erase operations.
9.1.8 Reset
There is a command to reset to the default conditions present after power on to the device. There is a command to reset (exit from)
the Enhanced Performance Read Modes.
9.1.9 Reserved
Some instructions are reserved for future use. In this generation of the S25FL128S and S25FL256S some of these command
instructions may be unused and not affect device operation, some may have undefined results.
Some commands are reserved to ensure that a legacy or alternate source device command is allowed without affect. This allows
legacy software to issue some commands that are not relevant for the current generation S25FL128S and S25FL256S devices with
the assurance these commands do not cause some unexpected action.
Some commands are reserved for use in special versions of the FL-S not addressed by this document or for a future generation.
This allows new host memory controller designs to plan the flexibility to issue these command instructions. The command format is
defined if known at the time this document revision is published.
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S25FL128S/S25FL256S
9.2 Identification Commands
9.2.1 Read Identification - REMS (Read_ID or REMS 90h)
The READ_ID command identifies the Device Manufacturer ID and the Device ID. The command is also referred to as Read
Electronic Manufacturer and device Signature (REMS). READ-ID (REMS) is only supported for backward compatibility and should
not be used for new software designs. New software designs should instead make use of the RDID command.
The command is initiated by shifting on SI the instruction code “90h” followed by a 24-bit address of 00000h. Following this, the
Manufacturer ID and the Device ID are shifted out on SO starting at the falling edge of SCK after address. The Manufacturer ID and
the Device ID are always shifted out with the MSb first. If the 24-bit address is set to 000001h, then the Device ID is read out first
followed by the Manufacturer ID. The Manufacturer ID and Device ID output data toggles between address 000000H and 000001H
until terminated by a low to high transition on CS# input. The maximum clock frequency for the READ_ID command is
133 MHz.
Figure 49. READ_ID Command Sequence
Table 45. Read_ID Values
Device Manufacturer ID (hex) Device ID (hex)
S25FL128S 01 17
S25FL256S 01 18
1 32 109876540
Instruction ADD (1)
23 2122 13 2 0
SCK
SI
SO High Impedance
MS
b
CS
90h
343332 38373635 4342414039 464544
SCK
SI
SO
Manufacture ID
M
Sb
13 2 07 6 5 4
CS
47
13 2 07 6 5 4
Device ID
MS
b
28 29 3130
#
#
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S25FL128S/S25FL256S
9.2.2 Read Identification (RDID 9Fh)
The Read Identification (RDID) command provides read access to manufacturer identification, device identification, and Common
Flash Interface (CFI) information. The manufacturer identification is assigned by JEDEC. The CFI structure is defined by JEDEC
standard. The device identification and CFI values are assigned by Cypress.
The JEDEC Common Flash Interface (CFI) specification defines a device information structure, which allows a vendor-specified
software flash management program (driver) to be used for entire families of flash devices. Software support can then be device-
independent, JEDEC manufacturer ID independent, forward and backward-compatible for the specified flash device families.
System vendors can standardize their flash drivers for long-term software compatibility by using the CFI values to configure a family
driver from the CFI information of the device in use.
Any RDID command issued while a program, erase, or write cycle is in progress is ignored and has no effect on execution of the
program, erase, or write cycle that is in progress.
The RDID instruction is shifted on SI. After the last bit of the RDID instruction is shifted into the device, a byte of manufacturer
identification, two bytes of device identification, extended device identification, and CFI information will be shifted sequentially out on
SO. As a whole this information is referred to as ID-CFI. See Section 7.3 ID-CFI Address Space on page 47 for the detail description
of the ID-CFI contents.
Continued shifting of output beyond the end of the defined ID-CFI address space will provide undefined data. The RDID command
sequence is terminated by driving CS# to the logic HIGH state anytime during data output.
The maximum clock frequency for the RDID command is 133 MHz.
Figure 50. Read Identification (RDID) Command Sequence
646
1 32109876540 31302928
Instruction
1645
652
34
33
32 655
654653
SCK
SI
SO High Impedance
Extended Device Information
CS#
0 1 2 20 21 22 23 24 25 26 644 647
Manufacturer / Device Identification
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S25FL128S/S25FL256S
9.2.3 Read Electronic Signature (RES) (ABh)
The RES command is used to read a single byte Electronic Signature from SO. RES is only supported for backward compatibility
and should not be used for new software designs. New software designs should instead make use of the RDID command.
The RES instruction is shifted in followed by three dummy bytes onto SI. After the last bit of the three dummy bytes are shifted into
the device, a byte of Electronic Signature will be shifted out of SO. Each bit is shifted out by the falling edge of SCK. The maximum
clock frequency for the RES command is 50 MHz.
The Electronic Signature can be read repeatedly by applying multiples of eight clock cycles.
The RES command sequence is terminated by driving CS# to the logic HIGH state anytime during data output.
Figure 51. Read Electronic Signature (RES) Command Sequence
9.3 Register Access Commands
9.3.1 Read Status Register-1 (RDSR1 05h)
The Read Status Register-1 (RDSR1) command allows the Status Register-1 contents to be read from SO. The Status Register-1
contents may be read at any time, even while a program, erase, or write operation is in progress. It is possible to read the Status
Register-1 continuously by providing multiples of eight clock cycles. The status is updated for each eight cycle read. The maximum
clock frequency for the RDSR1 (05h) command is 133 MHz.
Figure 52. Read Status Register-1 (RDSR1) Command Sequence
Table 46. RES Values
Device Device ID (hex)
S25FL128S 17
S25FL256S 18
1 32109876540 31302928
Instruction 3 Dummy
Bytes
23 2122 132 0
3635343332 393837
SCK
SI
SO High Impedance
MSb
Electonic ID
MSb
132 07654
CS#
1 32 109876540 14131211
Instruction
13 2 07 6 5 4
SCK
SO
High Impedance
MSb
Status Register-1 Out
SI
15 181716 22212019
13 2 07 6 5 4
MSb
Status Register-1 Out
23
7
MSb
CS
#
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S25FL128S/S25FL256S
9.3.2 Read Status Register-2 (RDSR2 07h)
The Read Status Register (RDSR2) command allows the Status Register-2 contents to be read from SO. The Status Register-2
contents may be read at any time, even while a program, erase, or write operation is in progress. It is possible to read the Status
Register-2 continuously by providing multiples of eight clock cycles. The status is updated for each eight cycle read. The maximum
clock frequency for the RDSR2 command is 133 MHz.
Figure 53. Read Status Register-2 (RDSR2) Command
9.3.3 Read Configuration Register (RDCR 35h)
The Read Configuration Register (RDCR) command allows the Configuration Register contents to be read from SO. It is possible to
read the Configuration Register continuously by providing multiples of eight clock cycles. The Configuration Register contents may
be read at any time, even while a program, erase, or write operation is in progress.
Figure 54. Read Configuration Register (RDCR) Command Sequence
9.3.4 Bank Register Read (BRRD 16h)
The Read the Bank Register (BRRD) command allows the Bank address Register contents to be read from SO. The instruction is
first shifted in from SI. Then the 8-bit Bank Register is shifted out on SO. It is possible to read the Bank Register continuously by
providing multiples of eight clock cycles. The maximum operating clock frequency for the BRRD command is 133 MHz.
Figure 55. Read Bank Register (BRRD) Command
1 32109876540 14131211
Instruction
132 07654
SCK
SO
High Impedance
MSb
Status Register-2 Out
SI
15 181716 22212019
132 07654
MSb
Status Register-2 Out
23
7
MSb
CS#
132 07654
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7654321076543210
Instruction Register Read Repeat Register Read
7 6 5 47 6 5 4 3 2 1 03 2 1 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 230 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
High ImpedanceHigh Impedance
7 6 5 47 6 5 4 3 2 1 03 2 1 0 7 6 5 47 6 5 4 3 2 1 03 2 1 0
Bank Register OutBank Register Out Bank Register OutBank Register Out
InstructionInstruction
MSbMSb MSbMSb MSbMSb
7
MSB
MSB
CS#CS#
SCKSCK
SISI
SOSO
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S25FL128S/S25FL256S
9.3.5 Bank Register Write (BRWR 17h)
The Bank Register Write (BRWR) command is used to write address bits above A23, into the Bank Address Register (BAR). The
command is also used to write the Extended address control bit (EXTADD) that is also in BAR[7]. BAR provides the high order
addresses needed by devices having more than 128 Mb (16 MB), when using 3-byte address commands without extended
addressing enabled (BAR[7] EXTADD = 0). Because this command is part of the addressing method and is not changing data in the
flash memory, this command does not require the WREN command to precede it.
The BRWR instruction is entered, followed by the data byte on SI. The Bank Register is one data byte in length.
The BRWR command has no effect on the P_ERR, E_ERR or WIP bits of the Status and Configuration Registers. Any bank address
bit reserved for the future should always be written as a 0.
Figure 56. Bank Register Write (BRWR) Command
9.3.6 Bank Register Access (BRAC B9h)
The Bank Register Read and Write commands provide full access to the Bank Address Register (BAR) but they are both commands
that are not present in legacy SPI memory devices. Host system SPI memory controller interfaces may not be able to easily support
such new commands. The Bank Register Access (BRAC) command uses the same command code and format as the Deep Power
Down (DPD) command that is available in legacy SPI memories. The FL-S family does not support a DPD feature but assigns this
legacy command code to the BRAC command to enable write access to the Bank Address Register for legacy systems that are able
to send the legacy DPD (B9h) command.
When the BRAC command is sent, the FL-S family device will then interpret an immediately following Write Register (WRR)
command as a write to the lower address bits of the BAR. A WREN command is not used between the BRAC and WRR commands.
Only the lower two bits of the first data byte following the WRR command code are used to load BAR[1:0]. The upper bits of that byte
and the content of the optional WRR command second data byte are ignored. Following the WRR command, the access to BAR is
closed and the device interface returns to the standby state. The combined BRAC followed by WRR command sequence has no
affect on the value of the ExtAdd bit (BAR[7]).
Commands other than WRR may immediately follow BRAC and execute normally. However, any command other than WRR, or any
other sequence in which CS# goes LOW and returns HIGH, following a BRAC command, will close the access to BAR and return to
the normal interpretation of a WRR command as a write to Status Register-1 and the Configuration Register.
The BRAC + WRR sequence is allowed only when the device is in standby, program suspend, or erase suspend states. This
command sequence is illegal when the device is performing an embedded algorithm or when the program (P_ERR) or erase
(E_ERR) status bits are set to 1.
Figure 57. BRAC (B9h) Command Sequence
Instruction Bank Register In
1 32109876540 14131211 15
132 07654
SCK
SI
SO
MSb
High Impedance
CS#
017 6 5 4 3 2
MSb
1 3276540
Instruction
SCK
SO
High Impedance
SI
CS#
017 6 5 4 3 2
M
Sb
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S25FL128S/S25FL256S
9.3.7 Write Registers (WRR 01h)
The Write Registers (WRR) command allows new values to be written to both the Status Register-1 and Configuration Register.
Before the Write Registers (WRR) command can be accepted by the device, a Write Enable (WREN) command must be received.
After the Write Enable (WREN) command has been decoded successfully, the device will set the Write Enable Latch (WEL) in the
Status Register to enable any write operations.
The Write Registers (WRR) command is entered by shifting the instruction and the data bytes on SI. The Status Register is one data
byte in length.
The Write Registers (WRR) command will set the P_ERR or E_ERR bits if there is a failure in the WRR operation. Any Status or
Configuration Register bit reserved for the future must be written as a 0.
CS# must be driven to the logic HIGH state after the eighth or sixteenth bit of data has been latched. If not, the Write Registers
(WRR) command is not executed. If CS# is driven HIGH after the eighth cycle then only the Status Register-1 is written; otherwise,
after the sixteenth cycle both the Status and Configuration Registers are written. When the configuration register QUAD bit CR[1] is
1, only the WRR command format with 16 data bits may be used.
As soon as CS# is driven to the logic HIGH state, the self-timed Write Registers (WRR) operation is initiated. While the Write
Registers (WRR) operation is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit.
The Write-In Progress (WIP) bit is a 1 during the self-timed Write Registers (WRR) operation, and is a 0 when it is completed. When
the Write Registers (WRR) operation is completed, the Write Enable Latch (WEL) is set to a 0. The WRR command must be
executed under continuous power. The maximum clock frequency for the WRR command is 133 MHz.
Figure 58. Write Registers (WRR) Command Sequence – 8 data bits
Figure 59. Write Registers (WRR) Command Sequence – 16 data bits
The Write Registers (WRR) command allows the user to change the values of the Block Protect (BP2, BP1, and BP0) bits to define
the size of the area that is to be treated as read-only. The Write Registers (WRR) command also allows the user to set the Status
Register Write Disable (SRWD) bit to a 1 or a 0. The Status Register Write Disable (SRWD) bit and Write Protect (WP#) signal allow
the BP bits to be hardware protected.
When the Status Register Write Disable (SRWD) bit of the Status Register is a 0 (its initial delivery state), it is possible to write to the
Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) command,
regardless of the whether Write Protect (WP#) signal is driven to the logic HIGH or logic LOW state.
Instruction Status Register In
1 32109876540 14131211 15
132 07654
SCK
SI
SO
MSb
High Impedance
CS#
IInstruction Status Register In
1 32 109876540 14131211 15
13 2 07 6 5 4
SCK
SI
SO
MSb
High Impedance
CS
Configuration Register In
181716 22212019 23
13 2 07 6 5 4
MSb
#
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S25FL128S/S25FL256S
When the Status Register Write Disable (SRWD) bit of the Status Register is set to a 1, two cases need to be considered, depending
on the state of Write Protect (WP#):
■If Write Protect (WP#) signal is driven to the logic HIGH state, it is possible to write to the Status and Configuration Registers provided
that the Write Enable Latch (WEL) bit has previously been set to a 1 by initiating a Write Enable (WREN) command.
■If Write Protect (WP#) signal is driven to the logic LOW state, it is not possible to write to the Status and Configuration Registers
even if the Write Enable Latch (WEL) bit has previously been set to a 1 by a Write Enable (WREN) command. Attempts to write to
the Status and Configuration Registers are rejected, and are not accepted for execution. As a consequence, all the data bytes in
the memory area that are protected by the Block Protect (BP2, BP1, BP0) bits of the Status Register, are also hardware protected
by WP#.
The WP# hardware protection can be provided:
■by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (WP#) signal to the logic LOW state;
■or by driving Write Protect (WP#) signal to the logic LOW state after setting the Status Register Write Disable (SRWD) bit to a 1.
The only way to release the hardware protection is to pull the Write Protect (WP#) signal to the logic HIGH state. If WP# is permanently
tied HIGH, hardware protection of the BP bits can never be activated.
The WRR command has an alternate function of loading the Bank Address Register if the command immediately follows a BRAC
command. See Section 9.3.6 Bank Register Access (BRAC B9h) on page 74.
9.3.8 Write Enable (WREN 06h)
The Write Enable (WREN) command sets the Write Enable Latch (WEL) bit of the Status Register 1 (SR1[1]) to a 1. The Write
Enable Latch (WEL) bit must be set to a 1 by issuing the Write Enable (WREN) command to enable write, program and erase
commands.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI. Without CS# being
driven to the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI, the write enable operation will not
be executed.
Figure 60. Write Enable (WREN) Command Sequence
Table 47. Block Protection Modes
WP# SRWD
Bit Mode Write Protection of Registers Memory Content
Protected Area Unprotected Area
11
Software
Protected
Status and Configuration Registers are Writable (if
WREN command has set the WEL bit). The values in
the SRWD, BP2, BP1, and BP0 bits and those in the
Configuration Register can be changed
Protected against Page
Program, Quad Input
Program, Sector Erase, and
Bulk Erase
Ready to accept Page
Program, Quad Input Program
and Sector Erase commands
10
00
01
Hardware
Protected
Status and Configuration Registers are Hardware
Write Protected. The values in the SRWD, BP2, BP1,
and BP0 bits and those in the Configuration Register
cannot be changed
Protected against Page
Program, Sector Erase, and
Bulk Erase
Ready to accept Page Program
or Erase commands
Notes
48. The Status Register originally shows 00h when the device is first shipped from Cypress to the customer.
49. Hardware protection is disabled when Quad Mode is enabled (QUAD bit = 1 in Configuration Register). WP# becomes IO2; therefore, it cannot be utilized.
3276540
Instruction
SCK
SI
1
CS#
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S25FL128S/S25FL256S
9.3.9 Write Disable (WRDI 04h)
The Write Disable (WRDI) command sets the Write Enable Latch (WEL) bit of the Status Register-1 (SR1[1]) to a 0.
The Write Enable Latch (WEL) bit may be set to a 0 by issuing the Write Disable (WRDI) command to disable Page Program (PP),
Sector Erase (SE), Bulk Erase (BE), Write Registers (WRR), OTP Program (OTPP), and other commands, that require WEL be set
to 1 for execution. The WRDI command can be used by the user to protect memory areas against inadvertent writes that can
possibly corrupt the contents of the memory. The WRDI command is ignored during an embedded operation while WIP bit =1.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI. Without CS# being
driven to the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI, the write disable operation will not
be executed.
Figure 61. Write Disable (WRDI) Command Sequence
9.3.10 Clear Status Register (CLSR 30h)
The Clear Status Register command resets bit SR1[5] (Erase Fail Flag) and bit SR1[6] (Program Fail Flag). It is not necessary to set
the WEL bit before the Clear SR command is executed. The Clear SR command will be accepted even when the device remains
busy with WIP set to 1, as the device does remain busy when either error bit is set. The WEL bit will be unchanged after this
command is executed.
Figure 62. Clear Status Register (CLSR) Command Sequence
3276540
Instruction
SCK
SI
1
CS#
32 76540
Instruction
SCK
SI
1
CS
#
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S25FL128S/S25FL256S
9.3.11 ECC Status Register Read (ECCRD 18h)
To read the ECC Status Register, the command is followed by the ECC unit (32 bit) address, the four least significant bits (LSb) of
address must be set to zero. This is followed by eight dummy cycles. Then the 8-bit contents of the ECC Register, for the ECC unit
selected, are shifted out on SO 16 times, once for each byte in the ECC Unit. If CS# remains LOW, the next ECC unit status is sent
through SO 16 times, once for each byte in the ECC Unit, this continues until CS# goes HIGH. The maximum operating clock
frequency for the ECC READ command is 133 MHz. See Section 9.5.1.1 Automatic ECC on page 98 for details on ECC unit.
Figure 63. ECC Status Register Read Command Sequence
9.3.12 AutoBoot
SPI devices normally require 32 or more cycles of command and address shifting to initiate a read command. And, in order to read
boot code from an SPI device, the host memory controller or processor must supply the read command from a hardwired state
machine or from some host processor internal ROM code.
Parallel NOR devices need only an initial address, supplied in parallel in a single cycle, and initial access time to start reading boot
code.
The AutoBoot feature allows the host memory controller to take boot code from an S25FL128S and S25FL256S device immediately
after the end of reset, without having to send a read command. This saves 32 or more cycles and simplifies the logic needed to
initiate the reading of boot code.
■As part of the power up reset, hardware reset, or command reset process the AutoBoot feature automatically starts a read access
from a pre-specified address. At the time the reset process is completed, the device is ready to deliver code from the starting address.
The host memory controller only needs to drive CS# signal from HIGH to LOW and begin toggling the SCK signal. The S25FL128S
and S25FL256S device will delay code output for a pre-specified number of clock cycles before code streams out.
❐The Auto Boot Start Delay (ABSD) field of the AutoBoot register specifies the initial delay if any is needed by the host.
❐The host cannot send commands during this time.
If ABSD = 0, the maximum SCK frequency is 50 MHz.
❐If ABSD > 0, the maximum SCK frequency is 133 MHz if the QUAD bit CR1[1] is 0 or 104 MHz if the QUAD bit is set to 1.
■The starting address of the boot code is selected by the value programmed into the AutoBoot Start Address (ABSA) field of the
AutoBoot Register which specifies a 512-byte boundary aligned location; the default address is 00000000h.
❐Data will continuously shift out until CS# returns HIGH.
■At any point after the first data byte is transferred, when CS# returns HIGH, the SPI device will reset to standard SPI mode; able to
accept normal command operations.
❐A minimum of one byte must be transferred.
❐AutoBoot mode will not initiate again until another power cycle or a reset occurs.
■An AutoBoot Enable bit (ABE) is set to enable the AutoBoot feature.
The AutoBoot register bits are non-volatile and provide:
■The starting address (512-byte boundary), set by the AutoBoot Start Address (ABSA). The size of the ABSA field is 23 bits for
devices up to 32-Gbit.
■The number of initial delay cycles, set by the AutoBoot Start Delay (ABSD) 8-bit count value.
■The AutoBoot Enable.
If the configuration register QUAD bit CR1[1] is set to 1, the boot code will be provided 4 bits per cycle in the same manner as a Read
Quad Out command. If the QUAD bit is 0 the code is delivered serially in the same manner as a Read command.
1 3210987654039383736
Instruction 32-Bit
Address
31 2930 132 0
132 07654
4443424140 474645
132 07654
Dummy Byte
5251504948 555453
DATA OUT 1 DATA OUT 2
SCK
SI
SO
MSb
High Impedance 7
MSb
CS#
132 07654
Document Number: 001-98283 Rev. *Q Page 79 of 146
S25FL128S/S25FL256S
Figure 64. AutoBoot Sequence (CR1[1]=0)
Figure 65. AutoBoot Sequence (CR1[1]=1)
9.3.13 AutoBoot Register Read (ABRD 14h)
The AutoBoot Register Read command is shifted into SI. Then the 32-bit AutoBoot Register is shifted out on SO, least significant
byte first, most significant bit of each byte first. It is possible to read the AutoBoot Register continuously by providing multiples of 32
clock cycles. If the QUAD bit CR1[1] is cleared to 0, the maximum operating clock frequency for ABRD command is 133 MHz. If the
QUAD bit CR1[1] is set to 1, the maximum operating clock frequency for ABRD command is 104 MHz.
Figure 66. AutoBoot Register Read (ABRD) Command
- --n+2n+1n---0 n+7n+6n+5n+4
Wait State
tWS
132 07654
n+9n+8
SCK
SI
SO High Impedance
MSb
DATA OUT 1 DATA OUT 2
7
MSb
CS#
n+3
Don’t Care or High Impedance
- --n+2n+1n---0 n+7n+6n+5n+4
Wait State
tWS
551 15151
n+9n+8
SCK
IO0
IO1
High Impedance DATA OUT 1
5
CS#
n+3
4 440 0040
High Impedance 4
662 26262
High Impedance 6
IO2
773 37373
High Impedance
MSb
7
IO3
24257 6 5 4 26
1 32109876540 383711
Instruction
SCK
SO
High Impedance
MSb
AutoBoot Register
SI
39 40
MSb
7
CS#
017 6 5 4 3 2
MSb
Document Number: 001-98283 Rev. *Q Page 80 of 146
S25FL128S/S25FL256S
9.3.14 AutoBoot Register Write (ABWR 15h)
Before the ABWR command can be accepted, a Write Enable (WREN) command must be issued and decoded by the device, which
sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The ABWR command is entered by shifting the instruction and the data bytes on SI, least significant byte first, most significant bit of
each byte first. The ABWR data is 32 bits in length.
The ABWR command has status reported in Status Register-1 as both an erase and a programming operation. An E_ERR or a
P_ERR may be set depending on whether the erase or programming phase of updating the register fails.
CS# must be driven to the logic HIGH state after the 32nd bit of data has been latched. If not, the ABWR command is not executed.
As soon as CS# is driven to the logic HIGH state, the self-timed ABWR operation is initiated. While the ABWR operation is in
progress, Status Register-1 may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a
1 during the self-timed ABWR operation, and is a 0. when it is completed. When the ABWR cycle is completed, the Write Enable
Latch (WEL) is set to a 0. The maximum clock frequency for the ABWR command is 133 MHz.
Figure 67. AutoBoot Register Write (ABWR) Command
9.3.15 Program NVDLR (PNVDLR 43h)
Before the Program NVDLR (PNVDLR) command can be accepted by the device, a Write Enable (WREN) command must be
issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the
Write Enable Latch (WEL) to enable the PNVDLR operation.
The PNVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic HIGH state after the eighth (8th) bit of data has been latched. If not, the PNVDLR command is not
executed. As soon as CS# is driven to the logic HIGH state, the self-timed PNVDLR operation is initiated. While the PNVDLR
operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In
Progress (WIP) bit is a 1 during the self-timed PNVDLR cycle, and is a 0. when it is completed. The PNVDLR operation can report a
program error in the P_ERR bit of the status register. When the PNVDLR operation is completed, the Write Enable Latch (WEL) is
set to a 0 The maximum clock frequency for the PNVDLR command is 133 MHz.
Figure 68. Program NVDLR (PNVDLR) Command Sequence
Instruction AutoBoot Register
1 32109876540 383736 39
24257 6 5 27 26
SCK
SI
SO
MSb
High Impedance
CS#
017 6 5 4 3 2
MSb
IIn s t ru c t io n D a ta L e a r n in g P a t te r n
1 32 1 09876540 1 41 31 2 1 5
017 6 5 3 2
S C K
S I
S O
MSb
H i g h I m p e d a n c e
CS
017 6 5 4 3 2 4
1 1
#
MSb
Document Number: 001-98283 Rev. *Q Page 81 of 146
S25FL128S/S25FL256S
9.3.16 Write VDLR (WVDLR 4Ah)
Before the Write VDLR (WVDLR) command can be accepted by the device, a Write Enable (WREN) command must be issued and
decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the Write
Enable Latch (WEL) to enable WVDLR operation.
The WVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic HIGH state after the eighth (8th) bit of data has been latched. If not, the WVDLR command is not
executed. As soon as CS# is driven to the logic HIGH state, the WVDLR operation is initiated with no delays. The maximum clock
frequency for the PNVDLR command is 133 MHz.
Figure 69. Write VDLR (WVDLR) Command Sequence
9.3.17 Data Learning Pattern Read (DLPRD 41h)
The instruction is shifted on SI, then the 8-bit DLP is shifted out on SO. It is possible to read the DLP continuously by providing
multiples of eight clock cycles. The maximum operating clock frequency for the DLPRD command is 133 MHz.
Figure 70. DLP Read (DLPRD) Command Sequence
IInstruction Data Learning Pattern
1 32 109876540 141312 15
017 6 5 3 2
SCK
SI
SO High Impedance
CS
017 6 5 4 3 2 4
11
#
MSb MSb
IInstruction Data Learning Pattern
1 32 109876540 141312 15
017 6 5 3 2
SCK
SI
SO
MSb
High Impedance
CS
017 6 5 4 3 2
MSb
4
11
Data Learning Pattern
181716 222120 23
017 6 5 3 2
MSb
4
19
#
Document Number: 001-98283 Rev. *Q Page 82 of 146
S25FL128S/S25FL256S
9.4 Read Memory Array Commands
Read commands for the main flash array provide many options for prior generation SPI compatibility or enhanced performance SPI:
■Some commands transfer address or data on each rising edge of SCK. These are called Single Data Rate commands (SDR).
■Some SDR commands transfer address one bit per rising edge of SCK and return data 1, 2, or 4 bits of data per rising edge of SCK.
These are called Read or Fast Read for 1-bit data; Dual Output Read for 2-bit data, and Quad Output for 4-bit data.
■Some SDR commands transfer both address and data 2 or 4 bits per rising edge of SCK. These are called Dual I/O for 2 bit and
Quad I/O for 4 bit.
■Some commands transfer address and data on both the rising edge and falling edge of SCK. These are called Double Data Rate
(DDR) commands.
■There are DDR commands for 1, 2, or 4 bits of address or data per SCK edge. These are called Fast DDR for 1-bit, Dual I/O DDR
for 2-bit, and Quad I/O DDR for 4-bit per edge transfer.
All of these commands begin with an instruction code that is transferred one bit per SCK rising edge. The instruction is followed by
either a 3- or 4-byte address transferred at SDR or DDR. Commands transferring address or data 2 or 4 bits per clock edge are called
Multiple I/O (MIO) commands. For FL-S devices at 256 Mb or higher density, the traditional SPI 3-byte addresses are unable to directly
address all locations in the memory array. These device have a bank address register that is used with 3-byte address commands to
supply the high order address bits beyond the address from the host system. The default bank address is zero. Commands are
provided to load and read the bank address register. These devices may also be configured to take a 4-byte address from the host
system with the traditional 3-byte address commands. The 4-byte address mode for traditional commands is activated by setting the
External Address (EXTADD) bit in the bank address register to 1. In the FL128S, higher order address bits above A23 in the 4-byte
address commands, commands using Extended Address mode, and the Bank Address Register are not relevant and are ignored
because the flash array is only 128 Mb in size.
The Quad I/O commands provide a performance improvement option controlled by mode bits that are sent following the address bits.
The mode bits indicate whether the command following the end of the current read will be another read of the same type, without an
instruction at the beginning of the read. These mode bits give the option to eliminate the instruction cycles when doing a series of
Quad I/O read accesses.
A device ordering option provides an enhanced high performance option by adding a similar mode bit scheme to the DDR Fast Read,
Dual I/O, and Dual I/O DDR commands, in addition to the Quad I/O command.
Some commands require delay cycles following the address or mode bits to allow time to access the memory array. The delay cycles
are traditionally called dummy cycles. The dummy cycles are ignored by the memory thus any data provided by the host during these
cycles is “don’t care” and the host may also leave the SI signal at high impedance during the dummy cycles. When MIO commands
are used the host must stop driving the IO signals (outputs are high impedance) before the end of last dummy cycle. When DDR
commands are used the host must not drive the I/O signals during any dummy cycle. The number of dummy cycles varies with the
SCK frequency or performance option selected via the Configuration Register 1 (CR1) Latency Code (LC). Dummy cycles are
measured from SCK falling edge to next SCK falling edge. SPI outputs are traditionally driven to a new value on the falling edge of
each SCK. Zero dummy cycles means the returning data is driven by the memory on the same falling edge of SCK that the host stops
driving address or mode bits.
The DDR commands may optionally have an 8-edge Data Learning Pattern (DLP) driven by the memory, on all data outputs, in the
dummy cycles immediately before the start of data. The DLP can help the host memory controller determine the phase shift from SCK
to data edges so that the memory controller can capture data at the center of the data eye.
When using SDR I/O commands at higher SCK frequencies (>50 MHz), an LC that provides 1 or more dummy cycles should be
selected to allow additional time for the host to stop driving before the memory starts driving data, to minimize I/O driver conflict. When
using DDR I/O commands with the DLP enabled, an LC that provides 5 or more dummy cycles should be selected to allow 1 cycle of
additional time for the host to stop driving before the memory starts driving the 4 cycle DLP.
Each read command ends when CS# is returned HIGH at any point during data return. CS# must not be returned HIGH during the
mode or dummy cycles before data returns as this may cause mode bits to be captured incorrectly; making it indeterminate as to
whether the device remains in enhanced high performance read mode.
Document Number: 001-98283 Rev. *Q Page 83 of 146
S25FL128S/S25FL256S
9.4.1 Read (Read 03h or 4READ 13h)
The instruction
03h (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
03h (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
13h is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, are shifted out on SO. The maximum operating clock frequency for the READ
command is 50 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Figure 71. Read Command Sequence (3-byte Address, 03h [ExtAdd=0])
Figure 72. Read Command Sequence (4-byte Address, 13h or 03h [ExtAdd=1])
1 32 109876540 31302928
Instruction 24-Bit
Address
23 21
22 13 2 0
13 2 07 6 5 4
3635343332 393837
SCK
SI
SO High Impedance
MSb
DATA OUT 1 DATA OUT 2
7
MSb
CS
#
1 32 109876540 39383736
Instruction 32-Bit
Address
31 2930 13 2 0
13 2 07 6 5 4
4443424140 474645
SCK
SI
SO High Impedance
MSb
DATA OUT 1 DATA OUT 2
7
MSb
CS
#
Document Number: 001-98283 Rev. *Q Page 84 of 146
S25FL128S/S25FL256S
9.4.2 Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch)
The instruction
0Bh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
0Bh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
0Ch is followed by a 4-byte address (A31-A0)
The address is followed by zero or eight dummy cycles depending on the latency code set in the Configuration Register. The dummy
cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data
value on SO is “don’t care” and may be high impedance. Then the memory contents, at the address given, are shifted out on SO.
The maximum operating clock frequency for FAST READ command is 133 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Figure 73. Fast Read (FAST_READ) Command Sequence (3-byte Address, 0Bh [ExtAdd=0, LC=10b])
Figure 74. Fast Read Command Sequence (4-byte Address, 0Ch or 0B [ExtAdd=1], LC=10b)
Figure 75. Fast Read Command Sequence (4-byte Address, 0Ch or 0B [ExtAdd=1], LC=11b)
1 32 109876540 31302928
Instruction 24-Bit
Address
23 2122 13 2 0
13 2 07 6 5 4
3635343332 393837
13 2 07 6 5 4
Dummy Byte
4443424140 474645
DATA OUT 1 DATA OUT 2
SCK
SI
SO
MS
b
High Impedance 7
MS
b
CS
#
1 32 109876540 39383736
Instruction 32-Bit
Address
31 2930 13 2 0
13 2 07 6 5 4
4443424140 474645
13 2 07 6 5 4
Dummy Byte
5251504948 555453
DATA OUT 1 DATA OUT 2
SCK
SI
SO
MS
b
High Impedance 7
MS
b
CS
#
0 1 2 3 4 5 6 7 8 383940414243444546474849
Instruction 32 Bit Address Data 1 Data 2
7 6 5 4 3 2 1 0 31 1 0
7 6 5 4 3 2 1 0 7 6
CS#
SCK
SI
SO
Document Number: 001-98283 Rev. *Q Page 85 of 146
S25FL128S/S25FL256S
9.4.3 Dual Output Read (DOR 3Bh or 4DOR 3Ch)
The instruction
3Bh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
3Bh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
3Ch is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1 (SO). Two bits are shifted
out at the SCK frequency by the falling edge of the SCK signal.
The maximum operating clock frequency for the Dual Output Read command is 104 MHz. For Dual Output Read commands, there
are zero or eight dummy cycles required after the last address bit is shifted into SI before data begins shifting out of IO0 and IO1.
This latency period (i.e., dummy cycles) allows the device’s internal circuitry enough time to read from the initial address. During the
dummy cycles, the data value on SI is a “don’t care” and may be high impedance. The number of dummy cycles is determined by the
frequency of SCK (refer to Table 27 on page 52).
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Figure 76. Dual Output Read Command Sequence (3-byte Address, 3Bh [ExtAdd=0], LC=10b)
Figure 77. Dual Output Read Command Sequence (4-byte Address, 3Ch or 3Bh [ExtAdd=1, LC=10b])
Figure 78. Dual Output Read Command Sequence (4-byte Address, 3Ch or 3Bh [ExtAdd=1, LC=11b])
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 23 22 21 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1
Instruction Address 8 Dummy Cycles Data 1 Data 2
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 31 30 29 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1
Instruction Address 8 Dummy Cycles Data 1 Data 2
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 31 30 29 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1
Instruction Address Data 1 Data 2
Document Number: 001-98283 Rev. *Q Page 86 of 146
S25FL128S/S25FL256S
9.4.4 Quad Output Read (QOR 6Bh or 4QOR 6Ch)
The instruction
■6Bh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
■6Bh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
■6Ch is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, is shifted out four bits at a time through IO0-IO3. Each nibble (4 bits) is shifted out
at the SCK frequency by the falling edge of the SCK signal.
The maximum operating clock frequency for Quad Output Read command is 104 MHz. For Quad Output Read Mode, there may be
dummy cycles required after the last address bit is shifted into SI before data begins shifting out of IO0-IO3. This latency period (i.e.,
dummy cycles) allows the device’s internal circuitry enough time to set up for the initial address. During the dummy cycles, the data
value on IO0-IO3 is a “don’t care” and may be high impedance. The number of dummy cycles is determined by the frequency of SCK
(refer to Table 27, Latency Codes for SDR Enhanced High Performance on page 52).
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction
and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h,
allowing the read sequence to be continued indefinitely.
The QUAD bit of Configuration Register must be set (CR Bit1=1) to enable the Quad mode capability.
Figure 79. Quad Output Read Command Sequence (3-byte Address, 6Bh [ExtAdd=0, LC=01b])
Figure 80. Quad Output Read Command Sequence (4-byte Address, 6Ch or 6Bh [ExtAdd=1, LC=01b])
0
1
2
3
4
5
6
7
8
30
31
32
33
34
35
36
37
38
39
40
41
42
43
Instruction
24 Bit Address
8 Dummy Cycles
Data 1
Data 2
7
6
5
4
3
2
1
0
23
1
0
4
0
4
0
5
1
5
1
6
2
6
2
7
3
7
3
CS#
SCK
IO0
IO1
IO2
IO3
0
1
2
3
4
5
6
7
8
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Instruction
32 Bit Address
8 Dummy Cycles
Data 1
Data 2
7
6
5
4
3
2
1
0
31
1
0
4
0
4
0
5
1
5
1
6
2
6
2
7
3
7
3
CS#
SCK
IO0
IO1
IO2
IO3
Document Number: 001-98283 Rev. *Q Page 87 of 146
S25FL128S/S25FL256S
Figure 81. Quad Output Read Command Sequence (4-byte Address, 6Ch or 6Bh [ExtAdd=1], LC=11b)
9.4.5 Dual I/O Read (DIOR BBh or 4DIOR BCh)
The instruction
BBh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
BBh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
BCh is followed by a 4-byte address (A31-A0)
The Dual I/O Read commands improve throughput with two I/O signals — IO0 (SI) and IO1 (SO). It is similar to the Dual Output
Read command but takes input of the address two bits per SCK rising edge. In some applications, the reduced address input time
might allow for code execution in place (XIP) i.e. directly from the memory device.
The maximum operating clock frequency for Dual I/O Read is 104 MHz.
For the Dual I/O Read command, there is a latency required after the last address bits are shifted into SI and SO before data begins
shifting out of IO0 and IO1. There are different ordering part numbers that select the latency code table used for this command,
either the High Performance LC (HPLC) table (see Table 25 on page 52) or the Enhanced High Performance LC (EHPLC) table (see
Table 27 on page 52). The HPLC table does not provide cycles for mode bits so each Dual I/O Read command starts with the 8 bit
instruction, followed by address, followed by a latency period.
This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial address. During the
dummy cycles, the data value on SI and SO are “don’t care” and may be high impedance. The number of dummy cycles is
determined by the frequency of SCK (see Table 27). The number of dummy cycles is set by the LC bits in the Configuration Register
(CR1).
The EHPLC table does provide cycles for mode bits so a series of Dual I/O Read commands may eliminate the 8-bit instruction after
the first Dual I/O Read command sends a mode bit pattern of Axh that indicates the following command will also be a Dual I/O Read
command. The first Dual I/O Read command in a series starts with the 8-bit instruction, followed by address, followed by four cycles
of mode bits, followed by a latency period. If the mode bit pattern is Axh the next command is assumed to be an additional Dual I/O
Read command that does not provide instruction bits. That command starts with address, followed by mode bits, followed by
latency.
The Enhanced High Performance feature removes the need for the instruction sequence and greatly improves code execution (XIP).
The upper nibble (bits 7-4) of the Mode bits control the length of the next Dual I/O Read command through the inclusion or exclusion
of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”) and may be high impedance. If the
Mode bits equal Axh, then the device remains in Dual I/O Enhanced High Performance Read Mode and the next address can be
entered (after CS# is raised high and then asserted LOW) without the BBh or BCh instruction, as shown in Figure 85; thus,
eliminating eight cycles for the command sequence. The following sequence will release the device from Dual I/O Enhanced High
Performance Read mode; after which, the device can accept standard SPI commands:
■During the Dual I/O Enhanced High Performance Command Sequence, if the Mode bits are any value other than Axh, then the next
time CS# is raised HIGH the device will be released from Dual I/O Read Enhanced High Performance Read mode.
0
1
2
3
4
5
6
7
8
38
39
40
41
42
43
44
45
46
47
Ins tructi on
32 Bit Address
Data 1
Data 2
Data 3
Data 3
7
6
5
4
3
2
1
0
31
1
0
4
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
6
2
6
2
6
2
6
2
7
3
7
3
7
3
7
3
CS#
SCK
IO0
IO1
IO2
IO3
Document Number: 001-98283 Rev. *Q Page 88 of 146
S25FL128S/S25FL256S
During any operation, if CS# toggles HIGH to LOW to high for eight cycles (or less) and data input (IO0 and IO1) are not set for a
valid instruction sequence, then the device will be released from Dual I/O Enhanced High Performance Read mode. Note that the
four mode bit cycles are part of the device’s internal circuitry latency time to access the initial address after the last address cycle
that is clocked into IO0 (SI) and IO1 (SO).
It is important that the I/O signals be set to high-impedance at or before the falling edge of the first data out clock. At higher clock
speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished. It is
allowed and may be helpful in preventing I/O signal contention, for the host system to turn off the I/O signal outputs (make them high
impedance) during the last two “don’t care” mode cycles or during any dummy cycles.
Following the latency period the memory content, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1
(SO). Two bits are shifted out at the SCK frequency at the falling edge of SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate.
Figure 82. Dual I/O Read Command Sequence (3-byte Address, BBh [ExtAdd=0], HPLC=00b)
Figure 83. Dual I/O Read Command Sequence (4-byte Address, BBh [ExtAdd=1], HPLC=10b)
Figure 84. Dual I/O Read Command Sequence (4-byte Address, BCh or BBh [ExtAdd=1], EHPLC=10b)
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 22 20 18 0 6 4 2 0 6 4 2 0
23 21 19 1 7 5 3 1 7 5 3 1
Instruction Address 4 Dummy Data 1 Data 2
CS#
SCK
IO0
IO1
Phase
7 6 5 4 3 2 1 0 30 28 26 0 6 4 2 0 6 4 2 0
31 29 27 1 7 5 3 1 7 5 3 1
Instruction Address 6 Dummy Data 1 Data 2
0
1
2
3
4
5
6
7
8
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Instruction
32 Bit Address
Mode
Dummy
Data 1
Data 2
8 cycles
16 cycles
4 cycles
2 cycles
4 cycles
7
6
5
4
3
2
1
0
30
2
0
6
4
2
0
6
4
2
0
6
4
2
31
3
1
7
5
3
1
7
5
3
1
7
5
3
CS#
SCK
IO0
IO1
Document Number: 001-98283 Rev. *Q Page 89 of 146
S25FL128S/S25FL256S
Figure 85. Continuous Dual I/O Read Command Sequence (4-byte Address, BCh or BBh [ExtAdd=1], EHPLC=10b)
9.4.6 Quad I/O Read (QIOR EBh or 4QIOR ECh)
The instruction
EBh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
EBh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
ECh is followed by a 4-byte address (A31-A0)
The Quad I/O Read command improves throughput with four I/O signals — IO0-IO3. It is similar to the Quad Output Read command
but allows input of the address bits four bits per serial SCK clock. In some applications, the reduced instruction overhead might allow
for code execution (XIP) directly from S25FL128S and S25FL256S devices. The QUAD bit of the Configuration Register must be set
(CR Bit1=1) to enable the Quad capability of S25FL128S and S25FL256S devices.
The maximum operating clock frequency for Quad I/O Read is 104 MHz.
For the Quad I/O Read command, there is a latency required after the mode bits (described below) before data begins shifting out of
IO0-IO3. This latency period (i.e., dummy cycles) allows the device’s internal circuitry enough time to access data at the initial
address. During latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. The number of dummy
cycles is determined by the frequency of SCK and the latency code table (refer to Table 27 on page 52). There are different ordering
part numbers that select the latency code table used for this command, either the High Performance LC (HPLC) table (see Table 25
on page 52) or the Enhanced High Performance LC (EHPLC) table (see Table 27). The number of dummy cycles is set by the LC
bits in the Configuration Register (CR1). However, both latency code tables use the same latency values for the Quad I/O Read
command.
Following the latency period, the memory contents at the address given, is shifted out four bits at a time through IO0-IO3. Each
nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Address jumps can be done without the need for additional Quad I/O Read instructions. This is controlled through the setting of the
Mode bits (after the address sequence, as shown in Figure 86 on page 90 or Figure 88 on page 90). This added feature removes
the need for the instruction sequence and greatly improves code execution (XIP). The upper nibble (bits 7-4) of the Mode bits control
the length of the next Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits
3-0) of the Mode bits are “don’t care” (“x”). If the Mode bits equal Axh, then the device remains in Quad I/O High Performance Read
Mode and the next address can be entered (after CS# is raised HIGH and then asserted LOW) without requiring the EBh or ECh
instruction, as shown in Figure 87 on page 90 or Figure 89 on page 91; thus, eliminating eight cycles for the command sequence.
The following sequence will release the device from Quad I/O High Performance Read mode; after which, the device can accept
standard SPI commands:
During the Quad I/O Read Command Sequence, if the Mode bits are any value other than Axh, then the next time CS# is raised
HIGH the device will be released from Quad I/O High Performance Read mode.
During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (IO0-IO3) are not set for a valid
instruction sequence, then the device will be released from Quad I/O High Performance Read mode. Note that the two mode bit
clock cycles and additional wait states (i.e., dummy cycles) allow the device’s internal circuitry latency time to access the initial
address after the last address cycle that is clocked into IO0-IO3.
0
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Data N
32 Bit Address
Mode
Dummy
Data 1
Data 2
4 cycles
16 cycles
4 cycles
2 cycles
4 cycles
4 cycles
6
4
2
0
30
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
31
3
1
7
5
3
1
7
5
3
1
7
5
3
1
CS#
SCK
IO0
IO1
Document Number: 001-98283 Rev. *Q Page 90 of 146
S25FL128S/S25FL256S
It is important that the IO0-IO3 signals be set to high-impedance at or before the falling edge of the first data out clock. At higher
clock speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished.
It is allowed and may be helpful in preventing IO0-IO3 signal contention, for the host system to turn off the IO0-IO3 signal outputs
(make them high impedance) during the last “don’t care” mode cycle or during any dummy cycles.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate.
Figure 86. Quad I/O Read Command Sequence (3-byte Address, EBh [ExtAdd=0], LC=00b)
Figure 87. Continuous Quad I/O Read Command Sequence (3-byte Address), LC=00b
Figure 88. Quad I/O Read Command Sequence(4-byte Address, ECh or EBh [ExtAdd=1], LC=00b)
0
1
2
3
4
5
6
7
8
12
13
14
15
16
17
18
19
20
21
22
23
Instruction
24 Bit Address
Mode
Dummy
Data 1
Data 2
8 cycles
6 cycles
2 cycles
4 cycles
2 cycles
7
6
5
4
3
2
1
0
20
4
0
4
0
4
0
4
0
21
5
1
5
1
5
1
5
1
22
6
2
6
2
6
2
6
1
23
7
3
7
3
7
3
7
1
CS#
SCK
IO0
IO1
IO2
IO3
04567891011121314
Data N Data N+1 24 Bit Address Mode Dummy Data 1 Data 2
2 cycles 2 cycles 6 cycles 2 cycles 4 cycles 2 cycles 2 cycles
4 0 4 0 20 4 0 4 04 0 4 0
5 1 5 1 21 5 1 5 15 1 5 1
6 2 6 2 22 6 2 6 26 2 6 1
7 3 7 3 23 7 3 7 37 3 7 1
CS#
SCK
IO0
IO1
IO2
IO3
0
1
2
3
4
5
6
7
8
14
15
16
17
18 19 20 21 22 23 24 25
Instruction 32 Bit Address Mode Dummy Data 1 Data 2
8 cycles 8 cycles 2 cycles 4 cycles 2 cycles
7
6
5
4
3
2 1 0 28 4 0 4 04 0 4 0
29 5 1 5 15 1 5 1
30 6 2 6 26 2 6 1
31 7 3 7 37 3 7 1
CS#
SCK
IO0
IO1
IO2
IO3
Document Number: 001-98283 Rev. *Q Page 91 of 146
S25FL128S/S25FL256S
Figure 89. Continuous Quad I/O Read Command Sequence (4-byte Address), LC=00b
9.4.7 DDR Fast Read (DDRFR 0Dh, 4DDRFR 0Eh)
The instruction
0Dh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
0Dh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
0Eh is followed by a 4-byte address (A31-A0)
The DDR Fast Read command improves throughput by transferring address and data on both the falling and rising edge of SCK. It
is similar to the Fast Read command but allows transfer of address and data on every edge of the clock.
The maximum operating clock frequency for DDR Fast Read command is 80 MHz.
For the DDR Fast Read command, there is a latency required after the last address bits are shifted into SI before data begins
shifting out of SO. There are different ordering part numbers that select the latency code table used for this command, either the
High Performance LC (HPLC) table (see Table 26 on page 52) or the Enhanced High Performance LC (EHPLC) table (see Table 28
on page 53). The HPLC table does not provide cycles for mode bits so each DDR Fast Read command starts with the 8 bit
instruction, followed by address, followed by a latency period.
This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial address. During the
dummy cycles, the data value on SI is “don’t care” and may be high impedance. The number of dummy cycles is determined by the
frequency of SCK (Table 27 on page 52). The number of dummy cycles is set by the LC bits in the Configuration Register (CR1).
Then the memory contents, at the address given, is shifted out, in DDR fashion, one bit at a time on each clock edge through SO.
Each bit is shifted out at the SCK frequency by the rising and falling edge of the SCK signal.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
The EHPLC table does provide cycles for mode bits so a series of DDR Fast Read commands may eliminate the 8 bit instruction
after the first DDR Fast Read command sends a mode bit pattern of complementary first and second Nibbles, e.g. A5h, 5Ah, 0Fh,
etc., that indicates the following command will also be a DDR Fast Read command. The first DDR Fast Read command in a series
starts with the 8-bit instruction, followed by address, followed by four cycles of mode bits, followed by a latency period. If the mode
bit pattern is complementary the next command is assumed to be an additional DDR Fast Read command that does not provide
instruction bits. That command starts with address, followed by mode bits, followed by latency.
0 6 7 8 9 10111213141516
Data N Data N+1 32 Bit Address Mode Dummy Data 1 Data 2
2 cycles 2 cycles 8 cycles 2 cycles 4 cycles 2 cycles 2 cycles
4 0 4 0 28 4 0 4 04 0 4 0
5 1 5 1 29 5 1 5 15 1 5 1
6 2 6 2 30 6 2 6 26 2 6 1
7 3 7 3 31 7 3 7 37 3 7 1
CS#
SCK
IO0
IO1
IO2
IO3
Document Number: 001-98283 Rev. *Q Page 92 of 146
S25FL128S/S25FL256S
When the EHPLC table is used, address jumps can be done without the need for additional DDR Fast Read instructions. This is
controlled through the setting of the Mode bits (after the address sequence, as shown in Figure 90 on page 92 and Figure 92
on page 93. This added feature removes the need for the eight bit SDR instruction sequence to reduce initial access time (improves
XIP performance). The Mode bits control the length of the next DDR Fast Read operation through the inclusion or exclusion of the
first byte instruction code. If the upper nibble (IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e. 5h and Ah)
then the next address can be entered (after CS# is raised HIGH and then asserted LOW) without requiring the 0Dh or 0Eh
instruction, as shown in Figure 91 and Figure 93, thus, eliminating eight cycles from the command sequence. The following
sequences will release the device from this continuous DDR Fast Read mode; after which, the device can accept standard SPI
commands:
1. During the DDR Fast Read Command Sequence, if the Mode bits are not complementary the next time CS# is raised HIGH the
device will be released from the continuous DDR Fast Read mode.
2. During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (SI) are not set for a valid
instruction sequence, then the device will be released from DDR Fast Read mode.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate.
The HOLD function is not valid during any part of a Fast DDR Command.
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of 34h. The DLP 34h
(or 00110100) will be driven on each of the active outputs (i.e. all four IOs on a x4 device, both IOs on a x2 device and the single SO
output on a x1 device). This pattern was chosen to cover both DC and AC data transition scenarios. The two DC transition scenarios
include data low for a long period of time (two half clocks) followed by a high going transition (001) and the complementary low going
transition (110). The two AC transition scenarios include data low for a short period of time (one half clock) followed by a high going
transition (101) and the complementary low going transition (010). The DC transitions will typically occur with a starting point closer
to the supply rail than the AC transitions that may not have fully settled to their steady state (DC) levels. In many cases the DC
transitions will bound the beginning of the data valid period and the AC transitions will bound the ending of the data valid period. These
transitions will allow the host controller to identify the beginning and ending of the valid data eye. Once the data eye has been
characterized the optimal data capture point can be chosen. See Section 7.5.12 SPI DDR Data Learning Registers on page 57 for
more details.
Figure 90. DDR Fast Read Initial Access (3-byte Address, 0Dh [ExtAdd=0, EHPLC=11b])
Figure 91. Continuous DDR Fast Read Subsequent Access (3-byte Address [ExtAdd=0, EHPLC=11b])
0
1
2
3
4
5
6
7
8
19
20
21
22
23
24
25
26
27
28
29
Ins truction
24 Bit Address
Mode
Dummy
per data
8 cycles
12 cycles
4 cycles
1 cyc
4 cycles
7
6
5
4
3
2
1
0
2
2
1
0
7
6
5
4
3
2
1 0
7 6 5 4 3 2 1 0 7 6
CS#
SCK
IO0
IO1
0
11
12
13
14
15
16
17
18
19
20
21
24 Bit Address
Mode
Dummy
per data
12 cycles
4 cycles
1 cyc
4 cycles
23
22
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
CS#
SCK
IO0
IO1
Document Number: 001-98283 Rev. *Q Page 93 of 146
S25FL128S/S25FL256S
Figure 92. DDR Fast Read Initial Access (4-byte Address, 0Eh or 0Dh [ExtAdd=1], EHPLC=01b)[50]
Figure 93. Continuous DDR Fast Read Subsequent Access (4-byte Address [ExtAdd=1], EHPLC=01b)[50]
Figure 94. DDR Fast Read Subsequent Access (4-byte Address, HPLC=01b)
0
1
2
3
4
5
6
7
8
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Instru ctio n
32b Add
Mode
Optional DLP
per data
8 cycles
16 cycles
4 cycles
4 cycles Dummy
4 cycles
7
6
5
4
3
2
1
0
31
22
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
CS#
SCK
SI
SO
Note
50. Example DLP of 34h (or 00110100).
0 15161718192021 22232425262728
32b Add Mode Optional DLP per data
16 cycles 4 cycles 4 cycles Dummy 4 cycles
31 22 1 0 7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6
CS#
SCK
SI
SO
0
1
2
3
4
5
6
7
8
23
24
25
26
27
28
29
30
31
32
33
34
Ins tr uc t io n
32b Add
Dummy
per data
8 cy cles
16 cycles
6 cy cles
4 cy cles
7
6
5
4
3
2
1
0
31
22
1
0
7
6
5
4
3
2
1
0
7
6
CS#
SCK
SI
SO
Document Number: 001-98283 Rev. *Q Page 94 of 146
S25FL128S/S25FL256S
9.4.8 DDR Dual I/O Read (BDh, BEh)
The instruction
BDh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
BDh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
BEh is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, is shifted out, in a DDR fashion, two bits at a time on each clock edge through IO0
(SI) and IO1 (SO). Two bits are shifted out at the SCK frequency by the rising and falling edge of the SCK signal.
The DDR Dual I/O Read command improves throughput with two I/O signals — IO0 (SI) and IO1 (SO). It is similar to the Dual I/O
Read command but transfers two address, mode, or data bits on every edge of the clock. In some applications, the reduced
instruction overhead might allow for code execution (XIP) directly from S25FL128S and S25FL256S devices.
The maximum operating clock frequency for DDR Dual I/O Read command is 80 MHz.
For DDR Dual I/O Read commands, there is a latency required after the last address bits are shifted into IO0 and IO1, before data
begins shifting out of IO0 and IO1. There are different ordering part numbers that select the latency code table used for this
command, either the High Performance LC (HPLC) table (see Table 26 on page 52) or the Enhanced High Performance LC
(EHPLC) table (see Table 28 on page 53). The number of latency (dummy) clocks is determined by the frequency of SCK (refer to
Table 26 or Table 28). The number of dummy cycles is set by the LC bits in the Configuration Register (CR1).
The HPLC table does not provide cycles for mode bits so each Dual I/O command starts with the 8 bit instruction, followed by
address, followed by a latency period. This latency period allows the device’s internal circuitry enough time to access the initial
address. During these latency cycles, the data value on SI (IO0) and SO (IO1) are “don’t care” and may be high impedance. When
the Data Learning Pattern (DLP) is enabled the host system must not drive the IO signals during the dummy cycles. The IO signals
must be left high impedance by the host so that the memory device can drive the DLP during the dummy cycles.
The EHPLC table does provide cycles for mode bits so a series of Dual I/O DDR commands may eliminate the 8 bit instruction after
the first command sends a complementary mode bit pattern, as shown in Figure 95 and Figure 97 on page 95. This added feature
removes the need for the eight bit SDR instruction sequence and dramatically reduces initial access times (improves XIP
performance). The Mode bits control the length of the next DDR Dual I/O Read operation through the inclusion or exclusion of the
first byte instruction code. If the upper nibble (IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e. 5h and Ah)
the device transitions to Continuous DDR Dual I/O Read Mode and the next address can be entered (after CS# is raised HIGH and
then asserted LOW) without requiring the BDh or BEh instruction, as shown in Figure 96 on page 95, and thus, eliminating eight
cycles from the command sequence. The following sequences will release the device from Continuous DDR Dual I/O Read mode;
after which, the device can accept standard SPI commands:
1. During the DDR Dual I/O Read Command Sequence, if the Mode bits are not complementary the next time CS# is raised HIGH
and then asserted LOW the device will be released from DDR Dual I/O Read mode.
2. During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (IO0 and IO1) are not set for
a valid instruction sequence, then the device will be released from DDR Dual I/O Read mode.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction
and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h,
allowing the read sequence to be continued indefinitely.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate. The HOLD function is not
valid during Dual I/O DDR commands.
Note that the memory devices may drive the IOs with a preamble prior to the first data value. The preamble is a data learning pattern
(DLP) that is used by the host controller to optimize data capture at higher frequencies. The preamble DLP drives the IO bus for the
four clock cycles immediately before data is output. The host must be sure to stop driving the IO bus prior to the time that the memory
starts outputting the preamble.
The preamble is intended to give the host controller an indication about the round trip time from when the host drives a clock edge to
when the corresponding data value returns from the memory device. The host controller will skew the data capture point during the
preamble period to optimize timing margins and then use the same skew time to capture the data during the rest of the read operation.
The optimized capture point will be determined during the preamble period of every read operation. This optimization strategy is
intended to compensate for both the PVT (process, voltage, temperature) of both the memory device and the host controller as well
as any system level delays caused by flight time on the PCB.
Document Number: 001-98283 Rev. *Q Page 95 of 146
S25FL128S/S25FL256S
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of 34h. The DLP 34h
(or 00110100) will be driven on each of the active outputs (i.e. all four SIOs on a x4 device, both SIOs on a x2 device and the single
SO output on a x1 device). This pattern was chosen to cover both DC and AC data transition scenarios. The two DC transition
scenarios include data low for a long period of time (two half clocks) followed by a high going transition (001) and the complementary
low going transition (110). The two AC transition scenarios include data low for a short period of time (one half clock) followed by a
high going transition (101) and the complementary low going transition (010). The DC transitions will typically occur with a starting
point closer to the supply rail than the AC transitions that may not have fully settled to their steady state (DC) levels. In many cases
the DC transitions will bound the beginning of the data valid period and the AC transitions will bound the ending of the data valid
period. These transitions will allow the host controller to identify the beginning and ending of the valid data eye. Once the data eye
has been characterized the optimal data capture point can be chosen. See Section 7.5.12 SPI DDR Data Learning Registers
on page 57 for more details.
Figure 95. DDR Dual I/O Read Initial Access (4-byte Address, BEh or BDh [ExtAdd=1], EHPLC= 01b)
Figure 96. Continuous DDR Dual I/O Read Subsequent Access (4-byte Address, EHPLC= 01b)
Figure 97. DDR Dual I/O Read (4-byte Address, BEh or BDh [ExtAdd=1], HPLC=00b)
0
1
2
3
4
5
6
7
8
15
16
17
18
19
20
21
22
23
24
25
Instr uction
32b Add
Mode
Optional DLP
per data
8 cycles
8 cycles
2 cycles
5 cycles Dummy
2 cycles
7
6
5
4
3
2
1
0
30
22
2
0
6
4
2
0
7
6
5
4
3
2
1
0
6
4
2
0
6
31
22
3
1
7
5
3
1
7
6
5
4
3
2
1
0
7
5
3
1
7
CS#
SCK
IO0
IO1
0 8 9 10 11 12 13 14 8 15 16 17
32b Add Mode Optional DLP per data
8 cycles 2 cycles 5 cycles Dummy 2 cycles
30 22 2 0 6 4 2 0 7 6 5 4 3 2 1 0 6 4 2 0 6
31 22 3 1 7 5 3 1 7 6 5 4 3 2 1 0 7 5 3 1 7
CS#
SCK
IO0
IO1
0
1
2
3
4
5
6
7
8
15
16
17
18
19
20
21
22
23
24
Ins truction
32b Add
Dummy
per data
8 cycles
8 cycles
6 cycles
2 cycles
7
6
5
4
3
2
1
0
30
2
0
6
4
2
0
6
31
3
1
7
5
3
1
7
2
CS#
SCK
IO0
IO1
Document Number: 001-98283 Rev. *Q Page 96 of 146
S25FL128S/S25FL256S
9.4.9 DDR Quad I/O Read (EDh, EEh)
The Read DDR Quad I/O command improves throughput with four I/O signals - IO0-IO3. It is similar to the Quad I/O Read command
but allows input of the address four bits on every edge of the clock. In some applications, the reduced instruction overhead might
allow for code execution (XIP) directly from S25FL128S and S25FL256S devices. The QUAD bit of the Configuration Register must
be set (CR Bit1=1) to enable the Quad capability.
The instruction
EDh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
EDh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
EEh is followed by a 4-byte address (A31-A0)
The address is followed by mode bits. Then the memory contents, at the address given, is shifted out, in a DDR fashion, with four
bits at a time on each clock edge through IO0-IO3.
The maximum operating clock frequency for Read DDR Quad I/O command is 80 MHz.
For Read DDR Quad I/O, there is a latency required after the last address and mode bits are shifted into the IO0-IO3 signals before
data begins shifting out of IO0-IO3. This latency period (dummy cycles) allows the device’s internal circuitry enough time to access
the initial address. During these latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. When the
Data Learning Pattern (DLP) is enabled the host system must not drive the IO signals during the dummy cycles. The IO signals must
be left high impedance by the host so that the memory device can drive the DLP during the dummy cycles.
There are different ordering part numbers that select the latency code table used for this command, either the High Performance LC
(HPLC) table (see Table 26 on page 52) or the Enhanced High Performance LC (EHPLC) table (see Table 28 on page 53). The
number of dummy cycles is determined by the frequency of SCK (refer to Table 26). The number of dummy cycles is set by the LC
bits in the Configuration Register (CR1).
Both latency tables provide cycles for mode bits so a series of Quad I/O DDR commands may eliminate the 8 bit instruction after the
first command sends a complementary mode bit pattern, as shown in Figure 98 and Figure 100. This feature removes the need for
the eight bit SDR instruction sequence and dramatically reduces initial access times (improves XIP performance). The Mode bits
control the length of the next Read DDR Quad I/O operation through the inclusion or exclusion of the first byte instruction code. If the
upper nibble (IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e. 5h and Ah) the device transitions to
Continuous Read DDR Quad I/O Mode and the next address can be entered (after CS# is raised HIGH and then asserted LOW)
without requiring the EDh or EEh instruction, as shown in Figure 99 on page 97 and Figure 101 on page 98 thus, eliminating eight
cycles from the command sequence. The following sequences will release the device from Continuous Read DDR Quad I/O mode;
after which, the device can accept standard SPI commands:
1. During the Read DDR Quad I/O Command Sequence, if the Mode bits are not complementary the next time CS# is raised HIGH
and then asserted LOW the device will be released from Read DDR Quad I/O mode.
2. During any operation, if CS# toggles HIGH to LOW to HIGH for eight cycles (or less) and data input (IO0, IO1, IO2, and IO3) are
not set for a valid instruction sequence, then the device will be released from Read DDR Quad I/O mode.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction
and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h,
allowing the read sequence to be continued indefinitely.
CS# should not be driven HIGH during mode or dummy bits as this may make the mode bits indeterminate. The HOLD function is not
valid during Quad I/O DDR commands.
Note that the memory devices drive the IOs with a preamble prior to the first data value. The preamble is a pattern that is used by the
host controller to optimize data capture at higher frequencies. The preamble drives the IO bus for the four clock cycles immediately
before data is output. The host must be sure to stop driving the IO bus prior to the time that the memory starts outputting the preamble.
The preamble is intended to give the host controller an indication about the round trip time from when the host drives a clock edge to
when the corresponding data value returns from the memory device. The host controller will skew the data capture point during the
preamble period to optimize timing margins and then use the same skew time to capture the data during the rest of the read operation.
The optimized capture point will be determined during the preamble period of every read operation. This optimization strategy is
intended to compensate for both the PVT (process, voltage, temperature) of both the memory device and the host controller as well
as any system level delays caused by flight time on the PCB.
Document Number: 001-98283 Rev. *Q Page 97 of 146
S25FL128S/S25FL256S
Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of 34h. The DLP 34h
(or 00110100) will be driven on each of the active outputs (i.e. all four SIOs on a x4 device, both SIOs on a x2 device and the single
SO output on a x1 device). This pattern was chosen to cover both DC and AC data transition scenarios. The two DC transition
scenarios include data low for a long period of time (two half clocks) followed by a high going transition (001) and the complementary
low going transition (110). The two AC transition scenarios include data low for a short period of time (one half clock) followed by a
high going transition (101) and the complementary low going transition (010). The DC transitions will typically occur with a starting
point closer to the supply rail than the AC transitions that may not have fully settled to their steady state (DC) levels. In many cases
the DC transitions will bound the beginning of the data valid period and the AC transitions will bound the ending of the data valid
period. These transitions will allow the host controller to identify the beginning and ending of the valid data eye. Once the data eye
has been characterized the optimal data capture point can be chosen. See Section 7.5.12 SPI DDR Data Learning Registers
on page 57 for more details.
Figure 98. DDR Quad I/O Read Initial Access (3-byte Address, EDh [ExtAdd=0], HPLC=11b)
Figure 99. Continuous DDR Quad I/O Read Subsequent Access (3-byte Address,HPLC=11b)
Figure 100. DDR Quad I/O Read Initial Access (4-byte Address, EEh or EDh [ExtAdd=1], EHPLC=01b)[51]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Instructi on
Add re s s
Mo d e
High-Z Bus Turn-around
Data 0
Data 1
8 cycles
3 cycles
1 cycle
3 cycle Dummy
1 cycle per data
7
6
5
4
3
2
1
0
20
16
12
8
4
0
4
0
4
0
4
0
21
17
13
9
5
1
5
1
5
1
5
1
22
18
14
10
6
2
6
2
6
2
6
2
23
19
15
11
7
3
7
3
7
3
7
3
CS#
SCK
IO0
IO1
IO2
IO3
0
1
2
3
4
5
6
7
8
Address
Mode
High-Z Bus Turn-around
Data 0
Data 1
3 cycle 1 cycle
3 cycle Dummy
1 cycle per data
20
16
12
8
4
0
4
0
4
0
4
0
21
17
13
9
5
1
5
1
5
1
5
1
22
18
14
10
6
2
6
2
6
2
6
2
23
19
15
11
7
3
7
3
7
3
7
3
CS#
SCK
IO0
IO1
IO2
IO3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Instr uct ion
32 Bit Address
Mode
High-Z Bus Turn-around
Optional Data Learning Pattern
Data 0
Data 1
8 cycles
4 cycles
1 cycle
7 cycle Dummy 1 cycle per data
7
6
5
4
3
2
1
0
28
24
20
16
12
8
4
0
4
0
7
6
5
4
3
2
1
0
4
0
4
0
29
25
21
17
13
9
5
1
5
1
7
6
5
4
3
2
1
0
5
1
5
1
30
26
22
18
14
10
6
2
6
2
7
6
5
4
3
2
1
0
6
2
6
2
31
27
23
19
15
11
7
3
7
3
7
6
5
4
3
2
1
0
7
3
7
3
CS#
SCK
IO0
IO1
IO2
IO3
Note
51. Example DLP of 34h (or 00110100).
Document Number: 001-98283 Rev. *Q Page 98 of 146
S25FL128S/S25FL256S
Figure 101. Continuous DDR Quad I/O Read Subsequent Access (4-byte Address, EHPLC=01b)[52]
9.5 Program Flash Array Commands
9.5.1 Program Granularity
9.5.1.1 Automatic ECC
Each 16 byte aligned and 16 byte length Programming Block has an automatic Error Correction Code (ECC) value. The data block
plus ECC form an ECC unit. In combination with Error Detection and Correction (EDC) logic the ECC is used to detect and correct
any single bit error found during a read access. When data is first programmed within an ECC unit the ECC value is set for the entire
ECC unit. If the same ECC unit is programmed more than once the ECC value is changed to disable the Error Detection and
Correction (EDC) function. A sector erase is needed to again enable Automatic ECC on that Programming Block. The 16 byte
Program Block is the smallest program granularity on which Automatic ECC is enabled.
These are automatic operations transparent to the user. The transparency of the Automatic ECC feature enhances data accuracy
for typical programming operations which write data once to each ECC unit but, facilitates software compatibility to previous
generations of FL-S family of products by allowing for single byte programming and bit walking in which the same ECC unit is
programmed more than once. When an ECC unit has Automatic ECC disabled, EDC is not done on data read from the ECC unit
location.
An ECC status register is provided for determining if ECC is enabled on an ECC unit and whether any errors have been detected
and corrected in the ECC unit data or the ECC (See Section 7.5.6 ECC Status Register (ECCSR) on page 55.) The ECC Status
Register Read (ECCRD) command is used to read the ECC status on any ECC unit.
EDC is applied to all parts of the Flash address spaces other than registers. An ECC is calculated for each group of bytes protected
and the ECC is stored in a hidden area related to the group of bytes. The group of protected bytes and the related ECC are together
called an ECC unit.
ECC is calculated for each 16 byte aligned and length ECC unit.
Single Bit EDC is supported with 8 ECC bits per ECC unit, plus 1 bit for an ECC disable Flag.
Sector erase resets all ECC bits and ECC disable flags in a sector to the default state (enabled).
ECC is programmed as part of the standard Program commands operation.
ECC is disabled automatically if multiple programming operations are done on the same ECC unit.
Single byte programming or bit walking is allowed but disables ECC on the second program to the same 16-byte ECC unit.
The ECC disable flag is programmed when ECC is disabled.
To re-enable ECC for an ECC unit that has been disabled, the Sector that includes the ECC unit must be erased.
To ensure the best data integrity provided by EDC, each ECC unit should be programmed only once so that ECC is stored for that
unit and not disabled.
The calculation, programming, and disabling of ECC is done automatically as part of a programming operation. The detection and
correction, if needed, is done automatically as part of read operations. The host system sees only corrected data from a read
operation.
ECC protects the OTP region - however a second program operation on the same ECC unit will disable ECC permanently on that
ECC unit (OTP is one time programmable, hence an erase operation to re-enable the ECC enable/indicator bit is prohibited).
012345678910111213
32 Bit Address Mode High-Z Bus Turn-around Optional Data Learning Pattern Data 0 Data 1
4 cycles 1 cycle 7 cycle Dummy 1 cycle per data
28 24 20 16 12 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0
29 25 21 17 13 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1
30 26 22 18 14 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2
31 27 23 19 15 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3
CS#
SCK
IO0
IO1
IO2
IO3
Note
52. Example DLP of 34h (or 00110100).
Document Number: 001-98283 Rev. *Q Page 99 of 146
S25FL128S/S25FL256S
9.5.1.2 Page Programming
Page Programming is done by loading a Page Buffer with data to be programmed and issuing a programming command to move
data from the buffer to the memory array. This sets an upper limit on the amount of data that can be programmed with a single
programming command. Page Programming allows up to a page size (either 256 or 512 bytes) to be programmed in one operation.
The page size is determined by the Ordering Part Number (OPN). The page is aligned on the page size address boundary. It is
possible to program from one bit up to a page size in each Page programming operation. It is recommended that a multiple of 16
byte length and aligned Program Blocks be written. For the very best performance, programming should be done in full pages of 512
bytes aligned on 512-byte boundaries with each Page being programmed only once.
9.5.1.3 Single Byte Programming
Single Byte Programming allows full backward compatibility to the standard SPI Page Programming (PP) command by allowing a
single byte to be programmed anywhere in the memory array. While single byte programming is supported, this will disable
Automatic ECC on the 16 byte ECC unit where the byte is located
9.5.2 Page Program (PP 02h or 4PP 12h)
The Page Program (PP) commands allows bytes to be programmed in the memory (changing bits from 1 to 0). Before the Page
Program (PP) commands can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the
device. After the Write Enable (WREN) command has been decoded successfully, the device sets the Write Enable Latch (WEL) in
the Status Register to enable any write operations.
The instruction
02h (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
02h (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
12h is followed by a 4-byte address (A31-A0)
and at least one data byte on SI. Depending on the device OPN, the page size can either be 256 or 512 bytes. Up to a page can be
provided on SI after the 3-byte address with instruction 02h or 4-byte address with instruction 12h has been provided. If the 9 least
significant address bits (A8-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed
from the start address of the same page (from the address whose 9 least significant bits (A8-A0) are all zero) i.e. the address wraps
within the page aligned address boundaries. This is a result of only requiring the user to enter one single page address to cover the
entire page boundary.
If less than a page of data is sent to the device, these data bytes will be programmed in sequence, starting at the provided address
within the page, without having any affect on the other bytes of the same page.
For optimized timings, using the Page Program (PP) command to load the entire page size program buffer within the page boundary
will save overall programming time versus loading less than a page size into the program buffer.
The programming process is managed by the flash memory device internal control logic. After a programming command is issued,
the programming operation status can be checked using the Read Status Register-1 command. The WIP bit (SR1[0]) will indicate
when the programming operation is completed. The P_ERR bit (SR1[6]) will indicate if an error occurs in the programming operation
that prevents successful completion of programming.
Document Number: 001-98283 Rev. *Q Page 100 of 146
S25FL128S/S25FL256S
Figure 102. Page Program (PP) Command Sequence (3-byte Address, 02h)
Figure 103. Page Program (4PP) Command Sequence (4-byte Address, 12h)
1 32 109876540 31302928
Instruction 24-Bit
Address
23 2122 13 2 0
3635343332 393837
13 2 07 6 5 4
Data Byte 1
4120
13 2 07 6 5 4
Data Byte 2
4443424140 474645 5251594948 555453
13 2 07 6 5 4
Data Byte 3
4127
4126
4125
4124
4123
4122
4121
Data Byte 512
SCK
SI
SCK
SI
MSb
MSbMSb
MSb
MSb
CS
CS
13 2 07 6 5 4
#
#
1 32 109876540 39383736
Instruction 32-Bit
Address
31 2930 13 2 0
4443424140 474645
13 2 07 6 5 4
Data Byte 1
4128
13 2 07 6 5 4
Data Byte 2
5251504948 555453 6059585756 636261
13 2 07 6 5 4
Data Byte 3
4135
4134
4133
4132
4131
4130
4129
Data Byte 512
SCK
SI
SCK
SI
MSb
MSbMSb
MSb
MSb
CS
CS
13 2 07 6 5 4
#
#
Document Number: 001-98283 Rev. *Q Page 101 of 146
S25FL128S/S25FL256S
9.5.3 Quad Page Program (QPP 32h or 38h, or 4QPP 34h)
The Quad-input Page Program (QPP) command allows bytes to be programmed in the memory (changing bits from 1 to 0). The
Quad-input Page Program (QPP) command allows up to a page size (either 256 or 512 bytes) of data to be loaded into the Page
Buffer using four signals: IO0-IO3. QPP can improve performance for PROM Programmer and applications that have slower clock
speeds (< 12 MHz) by loading 4 bits of data per clock cycle. Systems with faster clock speeds do not realize as much benefit for the
QPP command since the inherent page program time becomes greater than the time it takes to clock-in the data. The maximum
frequency for the QPP command is 80 MHz.
To use Quad Page Program the Quad Enable Bit in the Configuration Register must be set (QUAD=1). A Write Enable command
must be executed before the device will accept the QPP command (Status
Register 1, WEL=1).
The instruction
32h (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
32h (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
38h (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
38h (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
34h is followed by a 4-byte address (A31-A0)
and at least one data byte, into the IO signals. Data must be programmed at previously erased (FFh) memory locations.
The programming page is aligned on the page size address boundary. It is possible to program from one bit up to a page size in
each Page programming operation. It is recommended that a multiple of 16 byte length and aligned Program Blocks be written. This
insures that Automatic ECC is not disabled.
All other functions of QPP are identical to Page Program. The QPP command sequence is shown in Figure 104.
Figure 104. Quad 512-Byte Page Program Command Sequence (3-Byte Address, 32h or 38h)
1 32 109876540 31302928
Instruction 24-Bit
Address
23 2122 13 2 0
3635343332 393837
2
0
1
3
4
5
6
7
Byte 1
536
4443424140 474645 5251504948 555453
543
542
541
540
539
538
537
SCK
IO0
SCK
IO0
*
*
2
0
1
3
4
5
6
7
*
Byte 2
5
6 2
0
1
3
4
6
7
Byte 3
*
2
0
1
3
4
5
6
7
*
Byte 4
IO1
IO2
IO3
6 2
0
1
3
4
5
7
Byte 5
* *
Byte 6 Byte 7
* *
Byte 8 Byte 9
* *
Byte 10 Byte 11
* *
Byte 12 Byte 509
* *
Byte 510Byte 511
* *
Byte 512
IO1
IO2
IO3
CS#
CS#
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
*MSb
Document Number: 001-98283 Rev. *Q Page 102 of 146
S25FL128S/S25FL256S
Figure 105. Quad 256-Byte Page Program Command Sequence (3-Byte Address, 32h or 38h)
Figure 106. Quad 512-Byte Page Program Command Sequence (4-Byte Address, 34h or 32h or 38h [ExtAdd=1])
1 32 109876540 31302928
Instruction 24-Bit
Address
23 2122 13 2 0
3635343332 393837
2
0
1
3
4
5
6
7
Byte 1
280
4443424140 474645 5251504948 555453
287
286
285
284
283
282
281
SCK
IO0
SCK
IO0
*
*
2
0
1
3
4
5
6
7
*
Byte 2
5
6 2
0
1
3
4
6
7
Byte 3
*
2
0
1
3
4
5
6
7
*
Byte 4
IO1
IO2
IO3
6 2
0
1
3
4
5
7
Byte 5
* *
Byte 6 Byte 7
* *
Byte 8 Byte 9
* *
Byte 10 Byte 11
* *
Byte 12 Byte 253
* *
Byte 254Byte 255
* *
Byte 256
IO1
IO2
IO3
CS#
CS#
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
*MSb
1 3210987654039383736
Instruction 32-Bit
Address
31 2930 132 0
4443424140 474645
2
0
1
3
4
5
6
7
Byte 1
544
5251504948 555453 6059585756 636261
551
550
549
548
547
546
545
SCK
IO0
SCK
IO0
*
*
2
0
1
3
4
5
6
7
*
Byte 2
5
6 2
0
1
3
4
6
7
Byte 3
*
2
0
1
3
4
5
6
7
*
Byte 4
IO1
IO2
IO3
6 2
0
1
3
4
5
7
Byte 5
**
Byte 6 Byte 7
**
Byte 8 Byte 9
**
Byte 10 Byte 11
**
Byte 12 Byte
509
**
Byte
510
Byte
511
**
Byte
512
IO1
IO2
IO3
CS#
CS#
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
*MSb
756243 10
*
Document Number: 001-98283 Rev. *Q Page 103 of 146
S25FL128S/S25FL256S
Figure 107. Quad 256-Byte Page Program Command Sequence (4-Byte Address, 34h or 32h or 38h [ExtAdd=1])
1 3210987654039383736
Instruction 32-Bit
Address
31 2930 132 0
4443424140 474645
2
0
1
3
4
5
6
7
Byte 1
288
5251504948 555453 6059585756 636261
295
294
293
292
291
290
289
SCK
IO0
SCK
IO0
*
*
2
0
1
3
4
5
6
7
*
Byte 2
5
6 2
0
1
3
4
6
7
Byte 3
*
2
0
1
3
4
5
6
7
*
Byte 4
IO1
IO2
IO3
6 2
0
1
3
4
5
7
Byte 5
**
Byte 6 Byte 7
**
Byte 8 Byte 9
**
Byte 10 Byte 11
**
Byte 12 Byte
253
**
Byte
254
Byte
255
**
Byte
256
IO1
IO2
IO3
CS#
CS#
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
6 2
0
1
3
4
5
7
*MSb
756243 10
*
Document Number: 001-98283 Rev. *Q Page 104 of 146
S25FL128S/S25FL256S
9.5.4 Program Suspend (PGSP 85h) and Resume (PGRS 8Ah)
The Program Suspend command allows the system to interrupt a programming operation and then read from any other non-erase-
suspended sector or non-program-suspended-page. Program Suspend is valid only during a programming operation.
Commands allowed after the Program Suspend command is issued:
Read Status Register 1 (RDSR1 05h)
Read Status Register 2 (RDSR2 07h)
The Write in Progress (WIP) bit in Status Register 1 (SR1[0]) must be checked to know when the programming operation has
stopped. The Program Suspend Status bit in the Status Register-2 (SR2[0]) can be used to determine if a programming operation
has been suspended or was completed at the time WIP changes to 0. The time required for the suspend operation to complete is
tPSL, see Table 50 on page 119.
See Table 48 on page 109 for the commands allowed while programming is suspend.
The Program Resume command 8Ah must be written to resume the programming operation after a Program Suspend. If the
programming operation was completed during the suspend operation, a resume command is not needed and has no effect if issued.
Program Resume commands will be ignored unless a Program operation is suspended.
After a Program Resume command is issued, the WIP bit in the Status Register-1 will be set to a 1 and the programming operation
will resume. Program operations may be interrupted as often as necessary e.g. a program suspend command could immediately
follow a program resume command but, in order for a program operation to progress to completion there must be some periods of
time between resume and the next suspend command greater than or equal to tPRS. See Table 50 on page 119.
Figure 108. Program Suspend Command Sequence
Figure 109. Program Resume Command Sequence
Program Suspend Instruction
Read Status
Mode Command
Prog. Suspend
7
6
5
4
3
2
1
0
7
6
0
7
6
5
7
0
tPSLtPSL
CS#
SCK
SI
SO
1
132 76540
Instruction (8Ah)
SCK
SO
High Impedance
SI
CS
017 6 5 4 3 2
MS
b
Resume Programming
#
Document Number: 001-98283 Rev. *Q Page 105 of 146
S25FL128S/S25FL256S
9.6 Erase Flash Array Commands
9.6.1 Parameter 4-KB Sector Erase (P4E 20h or 4P4E 21h)
The P4E command is implemented only in FL128S and FL256S. The P4E command is ignored when the device is configured with
the 256-KB sector option.
The Parameter 4-KB Sector Erase (P4E) command sets all the bits of a 4-KB parameter sector to 1 (all bytes are FFh). Before the
P4E command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which
sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction
20h [ExtAdd=0] is followed by a 3-byte address (A23-A0), or
20h [ExtAdd=1] is followed by a 4-byte address (A31-A0), or
21h is followed by a 4-byte address (A31-A0)
CS# must be driven into the logic HIGH state after the twenty-fourth or thirty-second bit of the address has been latched in on SI.
This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the chosen sector of the
flash memory array. If CS# is not driven high after the last bit of address, the sector erase operation will not be executed.
As soon as CS# is driven HIGH, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read
the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a 1.
when the erase cycle is in progress and a 0 when the erase cycle has been completed.
A P4E command applied to a sector that has been write protected through the Block Protection bits or ASP, will not be executed and
will set the E_ERR status. A P4E command applied to a sector that is larger than
4 KB will not be executed and will not set the E_ERR status.
Figure 110. Parameter Sector Erase Command Sequence (3-Byte Address, 20h)
Figure 111. Parameter Sector Erase Command Sequence (ExtAdd = 1, 20h or 4-Byte Address, 21h)
1 32 109876540 31302928
Instruction 24 Bit Address
23 2122 13 2 0
SCK
SI
MSb
CS
#
1 32 109876540 39383736
Instruction 32 Bit Address
31 2930 13 2 0
SCK
SI
MSb
CS
#
Document Number: 001-98283 Rev. *Q Page 106 of 146
S25FL128S/S25FL256S
9.6.2 Sector Erase (SE D8h or 4SE DCh)
The Sector Erase (SE) command sets all bits in the addressed sector to 1 (all bytes are FFh). Before the Sector Erase (SE)
command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets
the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction
D8h [ExtAdd=0] is followed by a 3-byte address (A23-A0), or
D8h [ExtAdd=1] is followed by a 4-byte address (A31-A0), or
DCh is followed by a 4-byte address (A31-A0)
CS# must be driven into the logic HIGH state after the twenty-fourth or thirty-second bit of address has been latched in on SI. This
will initiate the erase cycle, which involves the pre-programming and erase of the chosen sector. If CS# is not driven HIGH after the
last bit of address, the sector erase operation will not be executed.
As soon as CS# is driven into the logic HIGH state, the internal erase cycle will be initiated. With the internal erase cycle in progress,
the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate
a 1 when the erase cycle is in progress and a0 when the erase cycle has been completed.
A Sector Erase (SE) command applied to a sector that has been Write Protected through the Block Protection bits or ASP, will not
be executed and will set the E_ERR status.
A device ordering option determines whether the SE command erases 64 KB or 256 KB. The option to use this command to always
erase 256 KB provides for software compatibility with higher density and future S25FL family devices.
ASP has a PPB and a DYB protection bit for each sector, including any 4-KB sectors. If a sector erase command is applied to a 64-
KB range that includes a protected 4-KB sector, or to a 256-KB range that includes a 64-KB protected address range, the erase will
not be executed on the range and will set the E_ERR status.
Figure 112. Sector Erase Command Sequence (ExtAdd = 0, 3-Byte Address, D8h)
Figure 113. Sector Erase Command Sequence (ExtAdd = 1, D8h or 4-Byte Address, DCh)
1 32 109876540 31302928
Instruction 24 Bit Address
23 2122 13 2 0
SCK
SI
MS
b
CS
#
1 32 1 09876540 3 93 83 73 6
In stru ctio n 32 B it A d dre ss
3 1 2 93 0 13 2 0
S C K
S I
M S b
C S
#
Document Number: 001-98283 Rev. *Q Page 107 of 146
S25FL128S/S25FL256S
9.6.3 Bulk Erase (BE 60h or C7h)
The Bulk Erase (BE) command sets all bits to 1 (all bytes are FFh) inside the entire flash memory array. Before the BE command
can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write
Enable Latch (WEL) in the Status Register to enable any write operations.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the
erase cycle, which involves the pre-programming and erase of the entire flash memory array. If CS# is not driven HIGH after the last
bit of instruction, the BE operation will not be executed.
As soon as CS# is driven into the logic HIGH state, the erase cycle will be initiated. With the erase cycle in progress, the user can
read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a 1
when the erase cycle is in progress and a 0 when the erase cycle has been completed.
A BE command can be executed only when the Block Protection (BP2, BP1, BP0) bits are set to 0’s. If the BP bits are not zero, the
BE command is not executed and E_ERR is not set. The BE command will skip any sectors protected by the DYB or PPB and the
E_ERR status will not be set.
Figure 114. Bulk Erase Command Sequence
9.6.4 Erase Suspend and Resume Commands (ERSP 75h or ERRS 7Ah)
The Erase Suspend command, allows the system to interrupt a sector erase operation and then read from or program data to, any
other sector. Erase Suspend is valid only during a sector erase operation. The Erase Suspend command is ignored if written during
the Bulk Erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of tESL (erase
suspend latency) to suspend the erase operation and update the status bits. See Table 51 on page 119.
Commands allowed after the Erase Suspend command is issued:
Read Status Register 1 (RDSR1 05h)
Read Status Register 2 (RDSR2 07h)
The Write in Progress (WIP) bit in Status Register 1 (SR1[0]) must be checked to know when the erase operation has stopped. The
Erase Suspend bit in Status Register-2 (SR2[1]) can be used to determine if an erase operation has been suspended or was
completed at the time WIP changes to 0.
If the erase operation was completed during the suspend operation, a resume command is not needed and has no effect if issued.
Erase Resume commands will be ignored unless an Erase operation is suspended.
See Table 48 on page 109 for the commands allowed while erase is suspend.
After the erase operation has been suspended, the sector enters the erase-suspend mode. The system can read data from or
program data to the device. Reading at any address within an erase-suspended sector produces undetermined data.
A WREN command is required before any command that will change non-volatile data, even during erase suspend.
The WRR and PPB Erase commands are not allowed during Erase Suspend, it is therefore not possible to alter the Block Protection
or PPB bits during Erase Suspend. If there are sectors that may need programming during Erase suspend, these sectors should be
protected only by DYB bits that can be turned off during Erase Suspend. However, WRR is allowed immediately following the BRAC
command; in this special case the WRR is interpreted as a write to the Bank Address Register, not a write to SR1 or CR1.
If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set.
3276540
Instruction
SCK
SI
1
CS#
Document Number: 001-98283 Rev. *Q Page 108 of 146
S25FL128S/S25FL256S
After an erase-suspended program operation is complete, the device returns to the erase-suspend mode. The system can
determine the status of the program operation by reading the WIP bit in the Status Register, just as in the standard program
operation.
The Erase Resume command 7Ah must be written to resume the erase operation if an Erase is suspend. Erase Resume commands
will be ignored unless an Erase is Suspend.
After an Erase Resume command is sent, the WIP bit in the status register will be set to a 1 and the erase operation will continue.
Further Resume commands are ignored.
Erase operations may be interrupted as often as necessary e.g. an erase suspend command could immediately follow an erase
resume command but, in order for an erase operation to progress to completion there must be some periods of time between
resume and the next suspend command greater than or equal to tERS. See Table 51 on page 119.
Figure 115. Erase Suspend Command Sequence
Figure 116. Erase Resume Command Sequence
Erase Suspend Instruction
Read Status
Mode Command
Erase Suspend
7
6
5
4
3
2
1
0
7
6
0
7
6
5
7
0
tESLtESL
CS#
SCK
SI
SO
1
132 76540
Instruction (7Ah)
SCK
SO
High Impedance
SI
CS
017 6 5 4 3 2
MS
b
Resume Sector or Block Erase
#
Document Number: 001-98283 Rev. *Q Page 109 of 146
S25FL128S/S25FL256S
Table 48. Commands Allowed During Program or Erase Suspend
Instruction
Name
Instruction
Code (Hex)
Allowed During
Erase Suspend Allowed During
Program Suspend Comment
BRAC B9 X X Bank address register may need to be changed during a suspend to
reach a sector for read or program.
BRRD 16 X X Bank address register may need to be changed during a suspend to
reach a sector for read or program.
BRWR 17 X X Bank address register may need to be changed during a suspend to
reach a sector for read or program.
CLSR 30 X – Clear status may be used if a program operation fails during erase
suspend.
DYBRD E0 X – It may be necessary to remove and restore dynamic protection during
erase suspend to allow programming during erase suspend.
DYBWR E1 X – It may be necessary to remove and restore dynamic protection during
erase suspend to allow programming during erase suspend.
ERRS 7A X – Required to resume from erase suspend.
DDRFR 0D X X All array reads allowed in suspend.
4DDRFR 0E X X All array reads allowed in suspend.
FAST_READ 0B X X All array reads allowed in suspend.
4FAST_READ 0C X X All array reads allowed in suspend.
MBR FF X X May need to reset a read operation during suspend.
PGRS 8A X X Needed to resume a program operation. A program resume may also
be used during nested program suspend within an erase suspend.
PGSP 85 X – Program suspend allowed during erase suspend.
PP 02 X – Required for array program during erase suspend.
4PP 12 X – Required for array program during erase suspend.
PPBRD E2 X – Allowed for checking persistent protection before attempting a program
command during erase suspend.
QPP 32, 38 X – Required for array program during erase suspend.
4QPP 34 X – Required for array program during erase suspend.
4READ 13 X X All array reads allowed in suspend.
RDCR 35 X X
DIOR BB X X All array reads allowed in suspend.
4DIOR BC X X All array reads allowed in suspend.
DOR 3B X X All array reads allowed in suspend.
4DOR 3C X X All array reads allowed in suspend.
DDRDIOR BD X X All array reads allowed in suspend.
4DDRDIOR BE X X All array reads allowed in suspend.
DDRQIOR ED X X All array reads allowed in suspend.
DDRQIOR4 EE X X All array reads allowed in suspend.
QIOR EB X X All array reads allowed in suspend.
4QIOR EC X X All array reads allowed in suspend.
QOR 6B X X All array reads allowed in suspend.
4QOR 6C X X All array reads allowed in suspend.
RDSR1 05 X X Needed to read WIP to determine end of suspend process.
RDSR2 07 X X Needed to read suspend status to determine whether the operation is
suspended or complete.
READ 03 X X All array reads allowed in suspend.
Document Number: 001-98283 Rev. *Q Page 110 of 146
S25FL128S/S25FL256S
9.7 One Time Program Array Commands
9.7.1 OTP Program (OTPP 42h)
The OTP Program command programs data in the One Time Program region, which is in a different address space from the main
array data. The OTP region is 1024 bytes so, the address bits from A23 to A10 must be zero for this command. Refer to Section 7.4
OTP Address Space on page 47 for details on the OTP region. The protocol of the OTP Program command is the same as the Page
Program command. Before the OTP Program command can be accepted by the device, a Write Enable (WREN) command must be
issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
To program the OTP array in bit granularity, the rest of the bits within a data byte can be set to 1.
Each region in the OTP memory space can be programmed one or more times, provided that the region is not locked. Attempting to
program zeros in a region that is locked will fail with the P_ERR bit in SR1 set to 1 Programming ones, even in a protected area does
not cause an error and does not set P_ERR. Subsequent OTP programming can be performed only on the un-programmed bits (that
is, 1 data).
Figure 117. OTP Program Command Sequence
RESET F0 X X Reset allowed anytime.
WREN 06 X – Required for program command within erase suspend.
WRR 01 X X
Bank register may need to be changed during a suspend to reach a
sector needed for read or program. WRR is allowed when following
BRAC.
Table 48. Commands Allowed During Program or Erase Suspend (Continued)
Instruction
Name
Instruction
Code (Hex)
Allowed During
Erase Suspend Allowed During
Program Suspend Comment
1 3210987654031302928
Instruction 24-Bit
Address
23 2122 132 0
3635343332 393837
132 07654
Data Byte 1
4120
132 07654
Data Byte 2
4443424140 474645 5251594948 555453
132 07654
Data Byte 3
4127
4126
4125
4124
4123
4122
4121
Data Byte 512
SCK
SI
SCK
SI
MSb
MSbMSb
MSb
MSb
CS#
CS#
132 07654
132 076 54
Document Number: 001-98283 Rev. *Q Page 111 of 146
S25FL128S/S25FL256S
9.7.2 OTP Read (OTPR 4Bh)
The OTP Read command reads data from the OTP region. The OTP region is 1024 bytes so, the address bits from A23 to A10 must
be zero for this command. Refer to Section 7.4 OTP Address Space on page 47 for details on the OTP region. The protocol of the
OTP Read command is similar to the Fast Read command except that it will not wrap to the starting address after the OTP address
is at its maximum; instead, the data beyond the maximum OTP address will be undefined. Also, the OTP Read command is not
affected by the latency code. The OTP read command always has one dummy byte of latency as shown below.
Figure 118. OTP Read Command Sequence
9.8 Advanced Sector Protection Commands
9.8.1 ASP Read (ASPRD 2Bh)
The ASP Read instruction 2Bh is shifted into SI by the rising edge of the SCK signal. Then the 16-bit ASP register contents is shifted
out on the serial output SO, least significant byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK
signal. It is possible to read the ASP register continuously by providing multiples of 16 clock cycles. The maximum operating clock
frequency for the ASP Read (ASPRD) command is 133 MHz.
Figure 119. ASPRD Command
1 32 109876540 31302928
Instruction 24-Bit
Address
23 2122 13 2 0
13 2 07 6 5 4
3635343332 393837
13 2 07 6 5 4
Dummy Byte
4443424140 474645
DATA OUT 1 DATA OUT 2
SCK
SI
SO
MSb
High Impedance 7
MSb
CS
#
1
3
2
10
9
8
7
6
5
4
0
14
13
12
11
Instruction
1
3
2
0
7
6
5
4
SCK
SO
High Impedance
MSb
Register Out
SI
15
18
17
16
22
21
20
19
9
11
10
8
15
14
13
12
MSb
Register Out
23
7
MSb
CS#
0
1
7
6
5
4
3
2
MSb
Document Number: 001-98283 Rev. *Q Page 112 of 146
S25FL128S/S25FL256S
9.8.2 ASP Program (ASPP 2Fh)
Before the ASP Program (ASPP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
The ASPP command is entered by driving CS# to the logic LOW state, followed by the instruction and two data bytes on SI, least
significant byte first. The ASP Register is two data bytes in length.
The ASPP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation.
CS# input must be driven to the logic HIGH state after the sixteenth bit of data has been latched in. If not, the ASPP command is not
executed. As soon as CS# is driven to the logic HIGH state, the self-timed ASPP operation is initiated. While the ASPP operation is
in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit
is a 1 during the self-timed ASPP operation, and is a 0 when it is completed. When the ASPP operation is completed, the Write
Enable Latch (WEL) is set to a 0.
Figure 120. ASPP Command
9.8.3 DYB Read (DYBRD E0h)
The instruction E0h is latched into SI by the rising edge of the SCK signal. Followed by the 32-bit address selecting location zero
within the desired sector (note, the high order address bits not used by a particular density device must be zero). Then the 8-bit DYB
access register contents are shifted out on the serial output SO. Each bit is shifted out at the SCK frequency by the falling edge of
the SCK signal. It is possible to read the same DYB access register continuously by providing multiples of eight clock cycles. The
address of the DYB register does not increment so this is not a means to read the entire DYB array. Each location must be read with
a separate DYB Read command. The maximum operating clock frequency for READ command is 133 MHz.
Figure 121. DYBRD Command Sequence
Instruction
Register In
1
3
2
10
9
8
7
6
5
4
0
14
13
12
11
15
1
3
2
0
7
6
5
4
SCK
SI
SO
MSb
High Impedance
CS#
0
1
7
6
5
4
3
2
MSb
18
17
16
22
21
20
19
23
9
11
10
8
15
14
13
12
1 3210987654039383736
Instruction 32-Bit
Address
31 2930 132 0
132 07654
4443424140 474645
DATA OUT 1
SCK
SI
SO
MSb
High Impedance
CS#
132 07654
Document Number: 001-98283 Rev. *Q Page 113 of 146
S25FL128S/S25FL256S
9.8.4 DYB Write (DYBWR E1h)
Before the DYB Write (DYBWR) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
The DYBWR command is entered by driving CS# to the logic LOW state, followed by the instruction, the 32-bit address selecting
location zero within the desired sector (note, the high order address bits not used by a particular density device must be zero), then
the data byte on SI. The DYB Access Register is one data byte in length.
The DYBWR command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation. CS# must be driven to the logic HIGH state after the eighth bit of data has been latched in. If not, the
DYBWR command is not executed. As soon as CS# is driven to the logic HIGH state, the self-timed DYBWR operation is initiated.
While the DYBWR operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit.
The Write-In Progress (WIP) bit is a 1 during the self-timed DYBWR operation, and is a 0 when it is completed. When the DYBWR
operation is completed, the Write Enable Latch (WEL) is set to a 0.
Figure 122. DYBWR Command Sequence
9.8.5 PPB Read (PPBRD E2h)
The instruction E2h is shifted into SI by the rising edges of the SCK signal, followed by the 32-bit address selecting location zero
within the desired sector (note, the high order address bits not used by a particular density device must be zero) Then the 8-bit PPB
access register contents are shifted out on SO.
It is possible to read the same PPB access register continuously by providing multiples of eight clock cycles. The address of the PPB
register does not increment so this is not a means to read the entire PPB array. Each location must be read with a separate PPB
Read command. The maximum operating clock frequency for the PPB Read command is 133 MHz.
Figure 123. PPBRD Command Sequence
1 3210987654039383736
Instruction 32-Bit
Address
31 2930 132 0
4443424140 474645
132 076 54
Data Byte 1
SCK
SI
MSb MSb
CS#
132 07654
1 3210987654039383736
Instruction 32-Bit
Address
31 2930 132 0
132 07654
4443424140 474645
DATA OUT 1
SCK
SI
SO
MSb
High Impedance
CS#
765 4321 0
Document Number: 001-98283 Rev. *Q Page 114 of 146
S25FL128S/S25FL256S
9.8.6 PPB Program (PPBP E3h)
Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After
the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to
enable any write operations.
The PPBP command is entered by driving CS# to the logic LOW state, followed by the instruction, followed by the 32-bit address
selecting location zero within the desired sector (note, the high order address bits not used by a particular density device must be
zero).
The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other
programming operation.
CS# must be driven to the logic HIGH state after the last bit of address has been latched in. If not, the PPBP command is not
executed. As soon as CS# is driven to the logic HIGH state, the self-timed PPBP operation is initiated. While the PPBP operation is
in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit
is a 1 during the self-timed PPBP operation, and is a 0 when it is completed. When the PPBP operation is completed, the Write
Enable Latch (WEL) is set to a 0.
Figure 124. PPBP Command Sequence
9.8.7 PPB Erase (PPBE E4h)
The PPB Erase (PPBE) command sets all PPB bits to 1. Before the PPB Erase command can be accepted by the device, a Write
Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status
Register to enable any write operations.
The instruction E4h is shifted into SI by the rising edges of the SCK signal.
CS# must be driven into the logic HIGH state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the
beginning of internal erase cycle, which involves the pre-programming and erase of the entire PPB memory array. Without CS#
being driven to the logic HIGH state after the eighth bit of the instruction, the PPB erase operation will not be executed.
With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has
been completed. The WIP bit will indicate a 1 when the erase cycle is in progress and a 0 when the erase cycle has been completed.
Erase suspend is not allowed during PPB Erase.
Figure 125. PPB Erase Command Sequence
I
Instruction 32 bit Address
1 32 109876540 383736 39
0131 30 29 3 2
SCK
SI
SO
MS
b
High Impedance
CS
017 6 5 4 3 2
MS
b
35
#
1 3276540
Instruction
SCK
SO
High Impedance
SI
CS#
017 6 5 4 3 2
MSb
Document Number: 001-98283 Rev. *Q Page 115 of 146
S25FL128S/S25FL256S
9.8.8 PPB Lock Bit Read (PLBRD A7h)
The PPB Lock Bit Read (PLBRD) command allows the PPB Lock Register contents to be read out of SO. It is possible to read the
PPB lock register continuously by providing multiples of eight clock cycles. The PPB Lock Register contents may only be read when
the device is in standby state with no other operation in progress. It is recommended to check the Write-In Progress (WIP) bit of the
Status Register before issuing a new command to the device.
Figure 126. PPB Lock Register Read Command Sequence
9.8.9 PPB Lock Bit Write (PLBWR A6h)
The PPB Lock Bit Write (PLBWR) command clears the PPB Lock Register to zero. Before the PLBWR command can be accepted
by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch
(WEL) in the Status Register to enable any write operations.
The PLBWR command is entered by driving CS# to the logic LOW state, followed by the instruction.
CS# must be driven to the logic HIGH state after the eighth bit of instruction has been latched in. If not, the PLBWR command is not
executed. As soon as CS# is driven to the logic HIGH state, the self-timed PLBWR operation is initiated. While the PLBWR
operation is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit. The Write-In
Progress (WIP) bit is a 1 during the self-timed PLBWR operation, and is a 0 when it is completed. When the PLBWR operation is
completed, the Write Enable Latch (WEL) is set to a 0. The maximum clock frequency for the PLBWR command is 133 MHz.
Figure 127. PPB Lock Bit Write Command Sequence
9.8.10 Password Read (PASSRD E7h)
The correct password value may be read only after it is programmed and before the Password Mode has been selected by
programming the Password Protection Mode bit to 0 in the ASP Register (ASP[2]). After the Password Protection Mode is selected
the PASSRD command is ignored.
The PASSRD command is shifted into SI. Then the 64-bit Password is shifted out on the serial output SO, least significant byte first,
most significant bit of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible
to read the Password continuously by providing multiples of 64 clock cycles. The maximum operating clock frequency for the
PASSRD command is 133 MHz.
Figure 128. Password Read Command Sequence
CS#
SCK
SI
SO
Phase
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Instruction Register Read Repeat Register Read
1 3276540
Instruction
SCK
SO
High Impedance
SI
CS#
017 6 5 4 3 2
M
Sb
756576 5 4 58
1 32109876540 706911
Instruction
SCK
SO
High Impedance
MSb
Password Least Sig. Byte First
SI
71 72
MSb
7
CS#
017 6 5 4 3 2
MSb
Document Number: 001-98283 Rev. *Q Page 116 of 146
S25FL128S/S25FL256S
9.8.11 Password Program (PASSP E8h)
Before the Password Program (PASSP) command can be accepted by the device, a Write Enable (WREN) command must be
issued and decoded by the device. After the Write Enable (WREN) command has been decoded, the device sets the Write Enable
Latch (WEL) to enable the PASSP operation.
The password can only be programmed before the Password Mode is selected by programming the Password Protection Mode bit
to 0 in the ASP Register (ASP[2]). After the Password Protection Mode is selected the PASSP command is ignored.
The PASSP command is entered by driving CS# to the logic LOW state, followed by the instruction and the password data bytes on
SI, least significant byte first, most significant bit of each byte first. The password is sixty-four (64) bits in length.
CS# must be driven to the logic HIGH state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSP command is
not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PASSP operation is initiated. While the PASSP
operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In
Progress (WIP) bit is a 1 during the self-timed PASSP cycle, and is a 0 when it is completed. The PASSP command can report a
program error in the P_ERR bit of the status register. When the PASSP operation is completed, the Write Enable Latch (WEL) is set
to a 0. The maximum clock frequency for the PASSP command is 133 MHz.
Figure 129. Password Program Command Sequence
9.8.12 Password Unlock (PASSU E9h)
The PASSU command is entered by driving CS# to the logic LOW state, followed by the instruction and the password data bytes on
SI, least significant byte first, most significant bit of each byte first. The password is sixty-four (64) bits in length.
CS# must be driven to the logic HIGH state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSU command is
not executed. As soon as CS# is driven to the logic HIGH state, the self-timed PASSU operation is initiated. While the PASSU
operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In
Progress (WIP) bit is a 1 during the self-timed PASSU cycle, and is a 0 when it is completed.
If the PASSU command supplied password does not match the hidden password in the Password Register, an error is reported by
setting the P_ERR bit to 1. The WIP bit of the status register also remains set to 1. It is necessary to use the CLSR command to
clear the status register, the RESET command to software reset the device, or drive the RESET# input LOW to initiate a hardware
reset, in order to return the P_ERR and WIP bits to 0. This returns the device to standby state, ready for new commands such as a
retry of the PASSU command.
If the password does match, the PPB Lock bit is set to 1. The maximum clock frequency for the PASSU command is 133 MHz.
Instruction Password
1 32109876540 706968 71
56577 6 5 59 58
SCK
SI
SO
MSb
High Impedance
CS#
017 6 5 4 3 2
MSb
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S25FL128S/S25FL256S
Figure 130. Password Unlock Command Sequence
9.9 Reset Commands
9.9.1 Software Reset Command (RESET F0h)
The Software Reset command (RESET) restores the device to its initial power up state, except for the volatile FREEZE bit in the
Configuration register CR1[1] and the volatile PPB Lock bit in the PPB Lock Register. The Freeze bit and the PPB Lock bit will
remain set at their last value prior to the software reset. To clear the FREEZE bit and set the PPB Lock bit to its protection mode
selected power on state, a full power-on-reset sequence or hardware reset must be done. Note that the non-volatile bits in the
configuration register, TBPROT, TBPARM, and BPNV, retain their previous state after a Software Reset. The Block Protection bits
BP2, BP1, and BP0, in the status register will only be reset if they are configured as volatile via the BPNV bit in the Configuration
Register (CR1[3]) and FREEZE is cleared to zero . The software reset cannot be used to circumvent the FREEZE or PPB Lock bit
protection mechanisms for the other security configuration bits. The reset command is executed when CS# is brought to HIGH state
and requires tRPH time to execute.
Figure 131. Software Reset Command Sequence
Instruction Password
1 32109876540 706968 71
56577 6 5 59 58
SCK
SI
SO
MSb
High Impedance
CS#
017 6 5 4 3 2
MSb
3276540
Instruction
SCK
SI
1
CS#
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9.9.2 Mode Bit Reset (MBR FFh)
The Mode Bit Reset (MBR) command can be used to return the device from continuous high performance read mode back to normal
standby awaiting any new command. Because some device packages lack a hardware RESET# input and a device that is in a
continuous high performance read mode may not recognize any normal SPI command, a system hardware reset or software reset
command may not be recognized by the device. It is recommended to use the MBR command after a system reset when the
RESET# signal is not available or, before sending a software reset, to ensure the device is released from continuous high
performance read mode.
The MBR command sends Ones on SI or IO0 for 8 SCK cycles. IO1 to IO3 are “don’t care” during these cycles.
Figure 132. Mode Bit Reset Command Sequence
9.10Embedded Algorithm Performance Tables
Table 49. Program and Erase Performance
Symbol Parameter Min Typ[53] Max[54] Unit
tWWRR Write Time – 140 500 ms
tPP
Page Programming (512 bytes)
Page Programming (256 bytes) – 340
250
750
750[55] µs
tSE
Sector Erase Time
(64-KB / 4-KB physical sectors) – 130 650[56] ms
Sector Erase Time
(64 KB Top/Bottom: logical sector = 16 x 4-KB physical sectors) – 2,080 10,400 ms
Sector Erase Time
(256-KB logical sectors = 4 x 64-KB physical sectors) – 520 2600 ms
tBE
tBE
Bulk Erase Time (S25FL128S) – 33 165 sec
Bulk Erase Time (S25FL256S) – 66 330 sec
Notes
53. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V; 10,000 cycles; checkerboard data pattern.
54. Under worst case conditions of 90°C; 100,000 cycles max.
55. Maximum value also applies to OTPP, PPBP, ASPP, PASSP, ABWR, and PNVDLR programming commands.
56. Maximum value also applies to the PPBE erase command.
1132 76540
Instruction (FFh)
SCK
SO
High Impedance
SI
CSS
#
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Table 50. Program Suspend AC Parameters
Parameter Min Typical Max Unit Comments
Program Suspend Latency (tPSL) – – 40 µs The time from Program Suspend command
until the WIP bit is 0
Program Resume to next Program
Suspend (tPRS) 0.06 100 – µs
Minimum is the time needed to issue the next
Program Suspend command but ≥ typical
periods are needed for Program to progress to
completion
Table 51. Erase Suspend AC Parameters
Parameter Min Typical Max Unit Comments
Erase Suspend Latency (tESL) – – 45 µs The time from Erase Suspend command until
the WIP bit is 0
Erase Resume to next Erase Suspend
(tERS) 0.06 100 – µs
Minimum is the time needed to issue the next
Erase Suspend command but ≥ typical periods
are needed for the Erase to progress to
completion
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10. Data Integrity
10.1Erase Endurance
10.2Data Retention
Contact Cypress Sales and FAE for further information on the data integrity. An application note is available at:
www.cypress.com/appnotes
Table 10.1 Erase Endurance
Parameter Minimum Unit
Program/Erase cycles per main Flash array sectors 100K PE cycle
Program/Erase cycles per PPB array or non-volatile register array[57] 100K PE cycle
Note
57. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array.
Table 10.2 Data Retention
Parameter Test Conditions Minimum
Time Unit
Data Retention Time 10K Program/Erase Cycles 20 Years
100K Program/Erase Cycles 2 Years
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11. Software Interface Reference
11.1 Command Summary
Table 52. S25FL128S and S25FL256S Instruction Set (sorted by instruction)
Instruction (Hex) Command Name Command Description Maximum Frequency (MHz)
01 WRR Write Register (Status-1, Configuration-1) 133
02 PP Page Program (3- or 4-byte address) 133
03 READ Read (3- or 4-byte address) 50
04 WRDI Write Disable 133
05 RDSR1 Read Status Register-1 133
06 WREN Write Enable 133
07 RDSR2 Read Status Register-2 133
0B FAST_READ Fast Read (3- or 4-byte address) 133
0C 4FAST_READ Fast Read (4-byte address) 133
0D DDRFR DDR Fast Read (3- or 4-byte address) 80
0E 4DDRFR DDR Fast Read (4-byte address) 80
12 4PP Page Program (4-byte address) 133
13 4READ Read (4-byte address) 50
14 ABRD AutoBoot Register Read 133
15 ABWR AutoBoot Register Write 133
16 BRRD Bank Register Read 133
17 BRWR Bank Register Write 133
18 ECCRD ECC Read 133
20 P4E Parameter 4 KB-sector Erase (3- or 4-byte address) 133
21 4P4E Parameter 4 KB-sector Erase (4-byte address) 133
2B ASPRD ASP Read 133
2F ASPP ASP Program 133
30 CLSR Clear Status Register - Erase/Program Fail Reset 133
32 QPP Quad Page Program (3- or 4-byte address) 80
34 4QPP Quad Page Program (4-byte address) 80
35 RDCR Read Configuration Register-1 133
38 QPP Quad Page Program (3- or 4-byte address) 80
3B DOR Read Dual Out (3- or 4-byte address) 104
3C 4DOR Read Dual Out (4-byte address) 104
41 DLPRD Data Learning Pattern Read 133
42 OTPP OTP Program 133
43 PNVDLR Program NV Data Learning Register 133
4A WVDLR Write Volatile Data Learning Register 133
4B OTPR OTP Read 133
60 BE Bulk Erase 133
6B QOR Read Quad Out (3- or 4-byte address) 104
6C 4QOR Read Quad Out (4-byte address) 104
75 ERSP Erase Suspend 133
7A ERRS Erase Resume 133
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85 PGSP Program Suspend 133
8A PGRS Program Resume 133
90 READ_ID (REMS) Read Electronic Manufacturer Signature 133
9F RDID Read ID (JEDEC Manufacturer ID and JEDEC CFI) 133
A3 MPM Reserved for Multi-I/O-High Perf Mode (MPM) 133
A6 PLBWR PPB Lock Bit Write 133
A7 PLBRD PPB Lock Bit Read 133
AB RES Read Electronic Signature 50
B9 BRAC
Bank Register Access
(Legacy Command formerly used for Deep Power
Down)
133
BB DIOR Dual I/O Read (3- or 4-byte address) 104
BC 4DIOR Dual I/O Read (4-byte address) 104
BD DDRDIOR DDR Dual I/O Read (3- or 4-byte address) 80
BE 4DDRDIOR DDR Dual I/O Read (4-byte address) 80
C7 BE Bulk Erase (alternate command) 133
D8 SE Erase 64 KB or 256 KB (3- or 4-byte address) 133
DC 4SE Erase 64 KB or 256 KB (4-byte address) 133
E0 DYBRD DYB Read 133
E1 DYBWR DYB Write 133
E2 PPBRD PPB Read 133
E3 PPBP PPB Program 133
E4 PPBE PPB Erase 133
E5 Reserved-E5 Reserved –
E6 Reserved-E6 Reserved –
E7 PASSRD Password Read 133
E8 PASSP Password Program 133
E9 PASSU Password Unlock 133
EB QIOR Quad I/O Read (3- or 4-byte address) 104
EC 4QIOR Quad I/O Read (4-byte address) 104
ED DDRQIOR DDR Quad I/O Read (3- or 4-byte address) 80
EE 4DDRQIOR DDR Quad I/O Read (4-byte address) 80
F0 RESET Software Reset 133
FF MBR Mode Bit Reset 133
Table 52. S25FL128S and S25FL256S Instruction Set (sorted by instruction) (Continued)
Instruction (Hex) Command Name Command Description Maximum Frequency (MHz)
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11.2 Device ID and Common Flash Interface (ID-CFI) Address Map
11.2.1 Field Definitions
Table 53. Manufacturer and Device ID
Byte Address Data Description
00h 01h Manufacturer ID for Cypress
01h
20h (128 Mb)
02h (256 Mb) Device ID Most Significant Byte - Memory Interface Type
02h 18h (128 Mb)
19h (256 Mb) Device ID Least Significant Byte - Density
03h 4Dh
ID-CFI Length - number bytes following. Adding this value to the
current location of 03h gives the address of the last valid location
in the ID-CFI address map. A value of 00h indicates the entire
512-byte ID-CFI space must be read because the actual length of
the ID-CFI information is longer than can be indicated by this
legacy single byte field. The value is OPN dependent.
04h
00h (Uniform 256-KB sectors)
01h (4-KB parameter sectors with uniform
64-KB sectors)
Sector Architecture
05h 80h (FL-S Family) Family ID
06h xxh ASCII characters for Model
Refer to Section 12. Ordering Information on page 140 for the
model number definitions.
07h xxh
08h xxh Reserved
09h xxh Reserved
0Ah xxh Reserved
0Bh xxh Reserved
0Ch xxh Reserved
0Dh xxh Reserved
0Eh xxh Reserved
0Fh xxh Reserved
Table 54. CFI Query Identification String
Byte Address Data Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
FL-P backward compatible command set ID
15h
16h
40h
00h Address for Primary Extended Table
17h
18h
53h
46h
Alternate OEM Command Set
ASCII characters “FS” for SPI (F) interface, S Technology
19h
1Ah
51h
00h Address for Alternate OEM Extended Table
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Table 55. CFI System Interface String
Byte Address Data Description
1Bh 27h VCC Min. (erase/program): 100 millivolts
1Ch 36h VCC Max. (erase/program): 100 millivolts
1Dh 00h VPP Min. voltage (00h = no VPP present)
1Eh 00h VPP Max. voltage (00h = no VPP present)
1Fh 06h Typical timeout per single byte program 2N µs
20h 08h (256B page)
09h (512B page)
Typical timeout for Min. size Page program 2N µs
(00h = not supported)
21h 08h (4 KB or 64 KB)
09h (256 KB) Typical timeout per individual sector erase 2N ms
22h 0Fh (128 Mb)
10h (256 Mb) Typical timeout for full chip erase 2N ms (00h = not supported)
23h 02h Max. timeout for byte program 2N times typical
24h 02h Max. timeout for page program 2N times typical
25h 03h Max. timeout per individual sector erase 2N times typical
26h 03h Max. timeout for full chip erase 2N times typical
(00h = not supported)
Table 56. Device Geometry Definition for 128-Mb and 256-Mb Bottom Boot Initial Delivery State[58]
Byte Address Data Description
27h 18h (128 Mb)
19h (256 Mb) Device Size = 2N bytes
28h 02h Flash Device Interface Description:
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
29h 01h
2Ah 08h Max. number of bytes in multi-byte write = 2N
(0000 = not supported
0008h = 256B page
0009h = 512B page)
2Bh 00h
2Ch 02h Number of Erase Block Regions within device
1 = Uniform Device, 2 = Boot Device
2Dh 1Fh
Erase Block Region 1 Information (refer to JEDEC JEP137):
32 sectors = 32-1 = 001Fh
4-KB sectors = 256 bytes x 0010h
2Eh 00h
2Fh 10h
30h 00h
31h FDh
Erase Block Region 2 Information:
254 sectors = 254-1 = 00FDh (128 Mb)
510 sectors = 510-1 = 01FDh (256 Mb)
64-KB sectors = 0100h x 256 bytes
32h 00h (128 Mb)
01h (256 Mb)
33h 00h
34h 01h
35h thru 3Fh FFh RFU
Note
58. FL-S 128 Mb and 256-Mb devices have either a hybrid sector architecture with thirty two 4-KB sectors and all remaining sectors of 64-KB or with uniform 256-KB
sectors. Devices with the hybrid sector architecture are initially shipped from Cypress with the 4 KB sectors located at the bottom of the array address map. However,
the device configuration TBPARM bit CR1[2] may be programed to invert the sector map to place the 4-KB sectors at the top of the array address map. The CFI
geometry information of the above table is relevant only to the initial delivery state of a hybrid sector device. The flash device driver software must examine the
TBPARM bit to determine if the sector map was inverted at a later time.
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Table 57. Device Geometry Definition for 128-Mb and 256-Mb Uniform Sector Devices
Byte Address Data Description
27h 18h (128 Mb)
19h (256 Mb) Device Size = 2N bytes
28h 02h Flash Device Interface Description:
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
29h 01h
2Ah 09h Max. number of bytes in multi-byte write = 2N
(0000 = not supported
0008h = 256B page
0009h = 512B page)
2Bh 00h
2Ch 01h Number of Erase Block Regions within device
1 = Uniform Device, 2 = Boot Device
2Dh 3Fh (128 Mb)
7Fh (256 Mb) Erase Block Region 1 Information (refer to JEDEC JEP137):
64 sectors = 64-1 = 003Fh (128 Mb)
128 sectors = 128-1 = 007Fh (256 Mb)
256-KB sectors = 256 bytes x 0400h
2Eh 00h
2Fh 00h
30h 04h
31h thru 3Fh FFh RFU
Table 58. CFI Primary Vendor-Specific Extended Query
Byte Address Data Description
40h 50h
Query-unique ASCII string “PRI” 41h 52h
42h 49h
43h 31h Major version number = 1, ASCII
44h 33h Minor version number = 3, ASCII
45h 21h
Address Sensitive Unlock (Bits 1-0)
00b = Required
01b = Not Required
Process Technology (Bits 5-2)
0000b = 0.23 µm Floating Gate
0001b = 0.17 µm Floating Gate
0010b = 0.23 µm MirrorBit
0011b = 0.11 µm Floating Gate
0100b = 0.11 µm MirrorBit
0101b = 0.09 µm MirrorBit
1000b = 0.065 µm MirrorBit
46h 02h
Erase Suspend
0 = Not Supported
1 = Read Only
2 = Read and Program
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The Alternate Vendor-Specific Extended Query provides information related to the expanded command set provided by the FL-S
family. The alternate query parameters use a format in which each parameter begins with an identifier byte and a parameter length
byte. Driver software can check each parameter ID and can use the length value to skip to the next parameter if the parameter is not
needed or not recognized by the software.
47h 01h
Sector Protect
00 = Not Supported
X = Number of sectors in group
48h 00h
Temporary Sector Unprotect
00 = Not Supported
01 = Supported
49h 08h
Sector Protect/Unprotect Scheme
04 = High Voltage Method
05 = Software Command Locking Method
08 = Advanced Sector Protection Method
09 = Secure
4Ah 00h
Simultaneous Operation
00 = Not Supported
X = Number of Sectors
4Bh 01h
Burst Mode (Synchronous sequential read) support
00 = Not Supported
01 = Supported
4Ch xxh
Page Mode Type, model dependent
00 = Not Supported
01 = 4 Word Read Page
02 = 8 Read Word Page
03 = 256-Byte Program Page
04 = 512-Byte Program Page
4Dh 00h ACC (Acceleration) Supply Minimum
00 = Not Supported, 100 mV
4Eh 00h ACC (Acceleration) Supply Maximum
00 = Not Supported, 100 mV
4Fh 07h
WP# Protection
01 = Whole Chip
04 = Uniform Device with Bottom WP Protect
05 = Uniform Device with Top WP Protect
07 = Uniform Device with Top or Bottom Write Protect (user select)
50h 01h
Program Suspend
00 = Not Supported
01 = Supported
Table 59. CFI Alternate Vendor-Specific Extended Query Header
Byte Address Data Description
51h 41h
Query-unique ASCII string “ALT” 52h 4Ch
53h 54h
54h 32h Major version number = 2, ASCII
55h 30h Minor version number = 0, ASCII
Table 58. CFI Primary Vendor-Specific Extended Query (Continued)
Byte Address Data Description
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Table 60. CFI Alternate Vendor-Specific Extended Query Parameter 0
Parameter Relative
Byte Address
Offset
Data Description
00h 00h Parameter ID (Ordering Part Number)
01h 10h Parameter Length (The number of following bytes in this parameter. Adding this value
to the current location value +1 = the first byte of the next parameter)
02h 53h ASCII “S” for manufacturer (Cypress)
03h 32h ASCII “25” for Product Characters (Single Die SPI)
04h 35h
05h 46h ASCII “FL” for Interface Characters (SPI 3 Volt)
06h 4Ch
07h 31h (128 Mb)
32h (256 Mb)
ASCII characters for density08h 32h (128 Mb)
35h (256 Mb)
09h 38h (128 Mb)
36h (256 Mb)
0Ah 53h ASCII “S” for Technology (65 nm MirrorBit)
0Bh
xxh Reserved for Future Use (RFU)
0Ch
0Dh
0Eh
0Fh
10h
11h
Table 61. CFI Alternate Vendor-Specific Extended Query Parameter 80h Address Options
Parameter Relative
Byte Address Off-
set
Data Description
00h 80h Parameter ID (address options)
01h 01h Parameter Length (The number of following bytes in this parameter. Adding this value
to the current location value +1 = the first byte of the next parameter)
02h F0h
Bits 7:4 - Reserved = 1111b
Bit 3 - AutoBoot support - Ye s= 0b, No = 1b
Bit 2 - 4-byte address instructions supported - Yes = 0b, No = 1b
Bit 1 - Bank address + 3-byte address instructions supported - Yes = 0b, No = 1b
Bit 0 - 3-byte address instructions supported - Yes = 0b, No = 1b
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Table 62. CFI Alternate Vendor-Specific Extended Query Parameter 84h Suspend Commands
Parameter Relative
Byte Address
Offset
Data Description
00h 84h Parameter ID (Suspend Commands
01h 08h Parameter Length (The number of following bytes in this parameter. Adding this value
to the current location value +1 = the first byte of the next parameter)
02h 85h Program suspend instruction code
03h 2Dh Program suspend latency maximum (µs)
04h 8Ah Program resume instruction code
05h 64h Program resume to next suspend typical (µs)
06h 75h Erase suspend instruction code
07h 2Dh Erase suspend latency maximum (µs)
08h 7Ah Erase resume instruction code
09h 64h Erase resume to next suspend typical (µs)
Table 63. CFI Alternate Vendor-Specific Extended Query Parameter 88h Data Protection
Parameter Relative
Byte Address
Offset
Data Description
00h 88h Parameter ID (Data Protection)
01h 04h Parameter Length (The number of following bytes in this parameter. Adding this value
to the current location value +1 = the first byte of the next parameter)
02h 0Ah OTP size 2N bytes, FFh = not supported
03h 01h OTP address map format, 01h = FL-S format, FFh = not supported
04h xxh Block Protect Type, model dependent
00h = FL-P, FL-S, FFh = not supported
05h xxh Advanced Sector Protection type, model dependent
01h = FL-S ASP
Table 64. CFI Alternate Vendor-Specific Extended Query Parameter 8Ch Reset Timing
Parameter Relative
Byte Address
Offset
Data Description
00h 8Ch Parameter ID (Reset Timing)
01h 06h Parameter Length (The number of following bytes in this parameter. Adding this
value to the current location value +1 = the first byte of the next parameter)
02h 96h POR maximum value
03h 01h POR maximum exponent 2N µs
04h FFh (without separate RESET#)
23h (with separate RESET #) Hardware Reset maximum value
05h 00h Hardware Reset maximum exponent 2N µs
06h 23h Software Reset maximum value, FFh = not supported
07h 00h Software Reset maximum exponent 2N µs
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Table 65. CFI Alternate Vendor-Specific Extended Query Parameter 90h - HPLC(SDR)
Parameter Relative
Byte Address
Offset
Data Description
00h 90h Parameter ID (Latency Code Table)
01h 56h Parameter Length (The number of following bytes in this parameter. Adding this value to the current
location value +1 = the first byte of the next parameter)
02h 06h Number of rows
03h 0Eh Row length in bytes
04h 46h Start of header (row 1), ASCII “F” for frequency column header
05h 43h ASCII “C” for Code column header
06h 03h Read 3-byte address instruction
07h 13h Read 4-byte address instruction
08h 0Bh Read Fast 3-byte address instruction
09h 0Ch Read Fast 4-byte address instruction
0Ah 3Bh Read Dual Out 3-byte address instruction
0Bh 3Ch Read Dual Out 4-byte address instruction
0Ch 6Bh Read Quad Out 3-byte address instruction
0Dh 6Ch Read Quad Out 4-byte address instruction
0Eh BBh Dual I/O Read 3-byte address instruction
0Fh BCh Dual I/O Read 4-byte address instruction
10h EBh Quad I/O Read 3-byte address instruction
11h ECh Quad I/O Read 4-byte address instruction
12h 32h Start of row 2, SCK frequency limit for this row (50 MHz)
13h 03h Latency Code for this row (11b)
14h 00h Read mode cycles
15h 00h Read latency cycles
16h 00h Read Fast mode cycles
17h 00h Read Fast latency cycles
18h 00h Read Dual Out mode cycles
19h 00h Read Dual Out latency cycles
1Ah 00h Read Quad Out mode cycles
1Bh 00h Read Quad Out latency cycles
1Ch 00h Dual I/O Read mode cycles
1Dh 04h Dual I/O Read latency cycles
1Eh 02h Quad I/O Read mode cycles
1Fh 01h Quad I/O Read latency cycles
20h 50h Start of row 3, SCK frequency limit for this row (80 MHz)
21h 00h Latency Code for this row (00b)
22h FFh Read mode cycles (FFh = command not supported at this frequency)
23h FFh Read latency cycles
24h 00h Read Fast mode cycles
25h 08h Read Fast latency cycles
26h 00h Read Dual Out mode cycles
27h 08h Read Dual Out latency cycles
28h 00h Read Quad Out mode cycles
29h 08h Read Quad Out latency cycles
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2Ah 00h Dual I/O Read mode cycles
2Bh 04h Dual I/O Read latency cycles
2Ch 02h Quad I/O Read mode cycles
2Dh 04h Quad I/O Read latency cycles
2Eh 5Ah Start of row 4, SCK frequency limit for this row (90 MHz)
2Fh 01h Latency Code for this row (01b)
30h FFh Read mode cycles (FFh = command not supported at this frequency)
31h FFh Read latency cycles
32h 00h Read Fast mode cycles
33h 08h Read Fast latency cycles
34h 00h Read Dual Out mode cycles
35h 08h Read Dual Out latency cycles
36h 00h Read Quad Out mode cycles
37h 08h Read Quad Out latency cycles
38h 00h Dual I/O Read mode cycles
39h 05h Dual I/O Read latency cycles
3Ah 02h Quad I/O Read mode cycles
3Bh 04h Quad I/O Read latency cycles
3Ch 68h Start of row 5, SCK frequency limit for this row (104 MHz)
3Dh 02h Latency Code for this row (10b)
3Eh FFh Read mode cycles (FFh = command not supported at this frequency)
3Fh FFh Read latency cycles
40h 00h Read Fast mode cycles
41h 08h Read Fast latency cycles
42h 00h Read Dual Out mode cycles
43h 08h Read Dual Out latency cycles
44h 00h Read Quad Out mode cycles
45h 08h Read Quad Out latency cycles
46h 00h Dual I/O Read mode cycles
47h 06h Dual I/O Read latency cycles
48h 02h Quad I/O Read mode cycles
49h 05h Quad I/O Read latency cycles
4Ah 85h Start of row 6, SCK frequency limit for this row (133 MHz)
4Bh 02h Latency Code for this row (10b)
4Ch FFh Read mode cycles (FFh = command not supported at this frequency)
4Dh FFh Read latency cycles
4Eh 00h Read Fast mode cycles
4Fh 08h Read Fast latency cycles
50h FFh Read Dual Out mode cycles
51h FFh Read Dual Out latency cycles
52h FFh Read Quad Out mode cycles
53h FFh Read Quad Out latency cycles
54h FFh Dual I/O Read mode cycles
Table 65. CFI Alternate Vendor-Specific Extended Query Parameter 90h - HPLC(SDR) (Continued)
Parameter Relative
Byte Address
Offset
Data Description
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55h FFh Dual I/O Read latency cycles
56h FFh Quad I/O Read mode cycles
57h FFh Quad I/O Read latency cycles
Table 66. CFI Alternate Vendor-Specific Extended Query Parameter 9Ah - HPLC DDR
Parameter Relative
Byte Address
Offset
Data Description
00h 9Ah Parameter ID (Latency Code Table)
01h 2Ah Parameter Length (The number of following bytes in this parameter. Adding this value to the
current location value +1 = the first byte of the next parameter)
02h 05h Number of rows
03h 08h Row length in bytes
04h 46h Start of header (row 1), ASCII “F” for frequency column header
05h 43h ASCII “C” for Code column header
06h 0Dh Read Fast DDR 3-byte address instruction
07h 0Eh Read Fast DDR 4-byte address instruction
08h BDh DDR Dual I/O Read 3-byte address instruction
09h BEh DDR Dual I/O Read 4-byte address instruction
0Ah EDh Read DDR Quad I/O 3-byte address instruction
0Bh EEh Read DDR Quad I/O 4-byte address instruction
0Ch 32h Start of row 2, SCK frequency limit for this row (50 MHz)
0Dh 03h Latency Code for this row (11b)
0Eh 00h Read Fast DDR mode cycles
0Fh 04h Read Fast DDR latency cycles
10h 00h DDR Dual I/O Read mode cycles
11h 04h DDR Dual I/O Read latency cycles
12h 01h Read DDR Quad I/O mode cycles
13h 03h Read DDR Quad I/O latency cycles
14h 42h Start of row 3, SCK frequency limit for this row (66 MHz)
15h 00h Latency Code for this row (00b)
16h 00h Read Fast DDR mode cycles
17h 05h Read Fast DDR latency cycles
18h 00h DDR Dual I/O Read mode cycles
19h 06h DDR Dual I/O Read latency cycles
1Ah 01h Read DDR Quad I/O mode cycles
1Bh 06h Read DDR Quad I/O latency cycles
1Ch 42h Start of row 4, SCK frequency limit for this row (66 MHz)
1Dh 01h Latency Code for this row (01b)
1Eh 00h Read Fast DDR mode cycles
1Fh 06h Read Fast DDR latency cycles
20h 00h DDR Dual I/O Read mode cycles
21h 07h DDR Dual I/O Read latency cycles
Table 65. CFI Alternate Vendor-Specific Extended Query Parameter 90h - HPLC(SDR) (Continued)
Parameter Relative
Byte Address
Offset
Data Description
Document Number: 001-98283 Rev. *Q Page 132 of 146
S25FL128S/S25FL256S
22h 01h Read DDR Quad I/O mode cycles
23h 07h Read DDR Quad I/O latency cycles
24h 42h Start of row 5, SCK frequency limit for this row (66 MHz)
25h 02h Latency Code for this row (10b)
26h 00h Read Fast DDR mode cycles
27h 07h Read Fast DDR latency cycles
28h 00h DDR Dual I/O Read mode cycles
29h 08h DDR Dual I/O Read latency cycles
2Ah 01h Read DDR Quad I/O mode cycles
2Bh 08h Read DDR Quad I/O latency cycles
Table 67. CFI Alternate Vendor-Specific Extended Query Parameter 90h - EHPLC (SDR)
Parameter Relative Byte
Address
Offset
Data Description
00h 90h Parameter ID (Latency Code Table)
01h 56h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location
value +1 = the first byte of the next parameter)
02h 06h Number of rows
03h 0Eh Row length in bytes
04h 46h Start of header (row 1), ASCII “F” for frequency column header
05h 43h ASCII “C” for Code column header
06h 03h Read 3-byte address instruction
07h 13h Read 4-byte address instruction
08h 0Bh Read Fast 3-byte address instruction
09h 0Ch Read Fast 4-byte address instruction
0Ah 3Bh Read Dual Out 3-byte address instruction
0Bh 3Ch Read Dual Out 4-byte address instruction
0Ch 6Bh Read Quad Out 3-byte address instruction
0Dh 6Ch Read Quad Out 4-byte address instruction
0Eh BBh Dual I/O Read 3-byte address instruction
0Fh BCh Dual I/O Read 4-byte address instruction
10h EBh Quad I/O Read 3-byte address instruction
11h ECh Quad I/O Read 4-byte address instruction
12h 32h Start of row 2, SCK frequency limit for this row (50 MHz)
13h 03h Latency Code for this row (11b)
14h 00h Read mode cycles
15h 00h Read latency cycles
16h 00h Read Fast mode cycles
17h 00h Read Fast latency cycles
18h 00h Read Dual Out mode cycles
19h 00h Read Dual Out latency cycles
1Ah 00h Read Quad Out mode cycles
1Bh 00h Read Quad Out latency cycles
1Ch 04h Dual I/O Read mode cycles
Table 66. CFI Alternate Vendor-Specific Extended Query Parameter 9Ah - HPLC DDR (Continued)
Parameter Relative
Byte Address
Offset
Data Description
Document Number: 001-98283 Rev. *Q Page 133 of 146
S25FL128S/S25FL256S
1Dh 00h Dual I/O Read latency cycles
1Eh 02h Quad I/O Read mode cycles
1Fh 01h Quad I/O Read latency cycles
20h 50h Start of row 3, SCK frequency limit for this row (80 MHz)
21h 00h Latency Code for this row (00b)
22h FFh Read mode cycles (FFh = command not supported at this frequency)
23h FFh Read latency cycles
24h 00h Read Fast mode cycles
25h 08h Read Fast latency cycles
26h 00h Read Dual Out mode cycles
27h 08h Read Dual Out latency cycles
28h 00h Read Quad Out mode cycles
29h 08h Read Quad Out latency cycles
2Ah 04h Dual I/O Read mode cycles
2Bh 00h Dual I/O Read latency cycles
2Ch 02h Quad I/O Read mode cycles
2Dh 04h Quad I/O Read latency cycles
2Eh 5Ah Start of row 4, SCK frequency limit for this row (90 MHz)
2Fh 01h Latency Code for this row (01b)
30h FFh Read mode cycles (FFh = command not supported at this frequency)
31h FFh Read latency cycles
32h 00h Read Fast mode cycles
33h 08h Read Fast latency cycles
34h 00h Read Dual Out mode cycles
35h 08h Read Dual Out latency cycles
36h 00h Read Quad Out mode cycles
37h 08h Read Quad Out latency cycles
38h 04h Dual I/O Read mode cycles
39h 01h Dual I/O Read latency cycles
3Ah 02h Quad I/O Read mode cycles
3Bh 04h Quad I/O Read latency cycles
3Ch 68h Start of row 5, SCK frequency limit for this row (104 MHz)
3Dh 02h Latency Code for this row (10b)
3Eh FFh Read mode cycles (FFh = command not supported at this frequency)
3Fh FFh Read latency cycles
40h 00h Read Fast mode cycles
41h 08h Read Fast latency cycles
42h 00h Read Dual Out mode cycles
43h 08h Read Dual Out latency cycles
44h 00h Read Quad Out mode cycles
45h 08h Read Quad Out latency cycles
46h 04h Dual I/O Read mode cycles
47h 02h Dual I/O Read latency cycles
48h 02h Quad I/O Read mode cycles
49h 05h Quad I/O Read latency cycles
Table 67. CFI Alternate Vendor-Specific Extended Query Parameter 90h - EHPLC (SDR) (Continued)
Parameter Relative Byte
Address
Offset
Data Description
Document Number: 001-98283 Rev. *Q Page 134 of 146
S25FL128S/S25FL256S
4Ah 85h Start of row 6, SCK frequency limit for this row (133 MHz)
4Bh 02h Latency Code for this row (10b)
4Ch FFh Read mode cycles (FFh = command not supported at this frequency)
4Dh FFh Read latency cycles
4Eh 00h Read Fast mode cycles
4Fh 08h Read Fast latency cycles
50h FFh Read Dual Out mode cycles
51h FFh Read Dual Out latency cycles
52h FFh Read Quad Out mode cycles
53h FFh Read Quad Out latency cycles
54h FFh Dual I/O Read mode cycles
55h FFh Dual I/O Read latency cycles
56h FFh Quad I/O Read mode cycles
57h FFh Quad I/O Read latency cycles
Table 68. CFI Alternate Vendor-Specific Extended Query Parameter 9Ah - EHPLC DDR
Parameter Relative Byte
Address
Offset
Data Description
00h 9Ah Parameter ID (Latency Code Table)
01h 2Ah Parameter Length (The number of following bytes in this parameter. Adding this value to the current location
value +1 = the first byte of the next parameter)
02h 05h Number of rows
03h 08h Row length in bytes
04h 46h Start of header (row 1), ASCII “F” for frequency column header
05h 43h ASCII “C” for Code column header
06h 0Dh Read Fast DDR 3-byte address instruction
07h 0Eh Read Fast DDR 4-byte address instruction
08h BDh DDR Dual I/O Read 3-byte address instruction
09h BEh DDR Dual I/O Read 4-byte address instruction
0Ah EDh Read DDR Quad I/O 3-byte address instruction
0Bh EEh Read DDR Quad I/O 4-byte address instruction
0Ch 32h Start of row 2, SCK frequency limit for this row (50 MHz)
0Dh 03h Latency Code for this row (11b)
0Eh 04h Read Fast DDR mode cycles
0Fh 01h Read Fast DDR latency cycles
10h 02h DDR Dual I/O Read mode cycles
11h 02h DDR Dual I/O Read latency cycles
12h 01h Read DDR Quad I/O mode cycles
13h 03h Read DDR Quad I/O latency cycles
14h 42h Start of row 3, SCK frequency limit for this row (66 MHz)
15h 00h Latency Code for this row (00b)
16h 04h Read Fast DDR mode cycles
17h 02h Read Fast DDR latency cycles
18h 02h DDR Dual I/O Read mode cycles
19h 04h DDR Dual I/O Read latency cycles
Table 67. CFI Alternate Vendor-Specific Extended Query Parameter 90h - EHPLC (SDR) (Continued)
Parameter Relative Byte
Address
Offset
Data Description
Document Number: 001-98283 Rev. *Q Page 135 of 146
S25FL128S/S25FL256S
This parameter type (Parameter ID F0h) may appear multiple times and have a different length each time. The parameter is used to
reserve space in the ID-CFI map or to force space (pad) to align a following parameter to a required boundary.
1Ah 01h Read DDR Quad I/O mode cycles
1Bh 06h Read DDR Quad I/O latency cycles
1Ch 42h Start of row 4, SCK frequency limit for this row (66 MHz)
1Dh 01h Latency Code for this row (01b)
1Eh 04h Read Fast DDR mode cycles
1Fh 04h Read Fast DDR latency cycles
20h 02h DDR Dual I/O Read mode cycles
21h 05h DDR Dual I/O Read latency cycles
22h 01h Read DDR Quad I/O mode cycles
23h 07h Read DDR Quad I/O latency cycles
24h 42h Start of row 5, SCK frequency limit for this row (66 MHz)
25h 02h Latency Code for this row (10b)
26h 04h Read Fast DDR mode cycles
27h 05h Read Fast DDR latency cycles
28h 02h DDR Dual I/O Read mode cycles
29h 06h DDR Dual I/O Read latency cycles
2Ah 01h Read DDR Quad I/O mode cycles
2Bh 08h Read DDR Quad I/O latency cycles
Table 69. CFI Alternate Vendor-Specific Extended Query Parameter F0h RFU
Parameter Relative
Byte Address Offset Data Description
00h F0h Parameter ID (RFU)
01h 0Fh Parameter Length (The number of following bytes in this parameter. Adding this
value to the current location value +1 = the first byte of the next parameter)
02h FFh RFU
... FFh RFU
10h FFh RFU
Table 68. CFI Alternate Vendor-Specific Extended Query Parameter 9Ah - EHPLC DDR (Continued)
Parameter Relative Byte
Address
Offset
Data Description
Document Number: 001-98283 Rev. *Q Page 136 of 146
S25FL128S/S25FL256S
11.3 Device ID and Common Flash Interface (ID-CFI) ASO Map — Automotive Only
The CFI Primary Vendor-Specific Extended Query is extended to include Electronic Marking information for device traceability.
Fab Lot # + Wafer # + Die X Coordinate + Die Y Coordinate gives a unique ID for each device.
11.4 Registers
The register maps are copied in this section as a quick reference. See Section7.5 Registers onpage49 for the full description of the
register contents.
Address Data Field # of
bytes
Data
Format
Example of
Actual Data Hex Read Out of Example Data
(SA) + 0180h Size of Electronic Marking 1 Hex 20 14h
(SA) + 0181h Revision of Electronic Marking 1 Hex 1 01h
(SA) + 0182h Fab Lot # 8 ASCII LD87270 4Ch, 44h, 38h, 37h, 32h, 37h, 30h, FFh
(SA) + 018Ah Wafer # 1 Hex 23 17h
(SA) + 018Bh Die X Coordinate 1 Hex 10 0Ah
(SA) + 018Ch Die Y Coordinate 1 Hex 15 0Fh
(SA) + 018Dh Class Lot # 7 ASCII BR33150 42h, 52h, 33h, 33h, 31h, 35h, 30h
(SA) + 0194h Reserved for Future 12 N/A N/A FFh, FFh, FFh, FFh, FFh, FFh, FFh, FFh,
FFh, FFh, FFh, FFh
Table 70. Status Register 1 (SR1)
Bits Field
Name Function Type Default State Description
7 SRWD Status Register
Write Disable Non-Volatile 0
1 = Locks state of SRWD, BP, and configuration
register bits when WP# is LOW by ignoring WRR
command
0 = No protection, even when WP# is LOW
6 P_ERR Programming
Error Occurred Volatile, Read only 0 1 = Error occurred
0 = No Error
5 E_ERR Erase Error
Occurred Volatile, Read only 0 1= Error occurred
0 = No Error
4 BP2
Block Protection
Volatile if CR1[3]=1,
Non-Volatile if
CR1[3]=0
1 if CR1[3]=1,
0 when
shipped from
Cypress
Protects selected range of sectors (Block) from
Program or Erase
3 BP1
2 BP0
1 WEL Write Enable
Latch Volatile 0
1 = Device accepts Write Registers (WRR), program
or erase commands
0 = Device ignores Write Registers (WRR), program
or erase commands
This bit is not affected by WRR, only WREN and
WRDI commands affect this bit.
0 WIP Write in Progress Volatile, Read only 0
1= Device Busy, a Write Registers (WRR), program,
erase or other operation is in progress
0 = Ready Device is in standby mode and can
accept commands
Document Number: 001-98283 Rev. *Q Page 137 of 146
S25FL128S/S25FL256S
Table 71. Configuration Register (CR1)
Bits Field Name Function Type Default
State Description
7 LC1
Latency Code Non-Volatile
0 Selects number of initial read latency cycles
See Latency Code tables (Ta b l e 2 5 through
Table 28)
6 LC0 0
5 TBPROT Configures Start of Block
Protection OTP 0 1 = BP starts at bottom (Low address)
0 = BP starts at top (High address)
4 RFU RFU OTP 0 Reserved for Future Use
3 BPNV Configures BP2-0 in Sta-
tus Register OTP 0 1 = Volatile
0 = Non-Volatile
2 TBPARM Configures Parameter
Sectors location OTP 0
1 = 4-KB physical sectors at top, (high address)
0 = 4-KB physical sectors at bottom (Low
address) RFU in uniform sector devices.
1 QUAD Puts the device into Quad
I/O operation Non-Volatile 0 1 = Quad
0 = Dual or Serial
0 FREEZE
Lock current state of BP2-
0 bits in Status Register,
TBPROT and TBPARM in
Configuration Register,
and OTP regions
Volatile 0 1 = Block Protection and OTP locked
0 = Block Protection and OTP un-locked
Table 72. Status Register 2 (SR2)
Bits Field Name Function Type Default State Description
7 RFU Reserved 0 Reserved for Future Use
6 RFU Reserved 0 Reserved for Future Use
5 RFU Reserved 0 Reserved for Future Use
4 RFU Reserved 0 Reserved for Future Use
3 RFU Reserved 0 Reserved for Future Use
2 RFU Reserved 0 Reserved for Future Use
1 ES Erase Suspend Volatile, Read only 0 1 = In erase suspend mode.
0 = Not in erase suspend mode.
0 PS Program Suspend Volatile, Read only 0 1 = In program suspend mode.
0 = Not in program suspend mode.
Table 73. Bank Address Register (BAR)
Bits Field Name Function Type Default State Description
7 EXTADD Extended Address
Enable Volatile 0b
1 = 4-byte (32 bits) addressing required from command.
0 = 3-byte (24 bits) addressing from command + Bank
Address
6 to 2 RFU Reserved Volatile 00000b Reserved for Future Use
1 BA25 Bank Address Volatile 0 RFU for lower density devices
0 BA24 Bank Address Volatile 0 A24 for 256-Mb device, RFU for lower density device
Document Number: 001-98283 Rev. *Q Page 138 of 146
S25FL128S/S25FL256S
Table 74. ASP Register (ASPR)
Bits Field Name Function Type Default
State Description
15 to 9 RFU Reserved OTP 1 Reserved for Future Use
8 RFU Reserved OTP Note [59]
Reserved for Future Use
7 RFU Reserved OTP Reserved for Future Use
6 RFU Reserved OTP 1 Reserved for Future Use
5 RFU Reserved OTP
Note [59]
Reserved for Future Use
4 RFU Reserved OTP Reserved for Future Use
3 RFU Reserved OTP Reserved for Future Use
2 PWDMLB Password Protection
Mode Lock Bit OTP 1 0 = Password Protection Mode Permanently Enabled.
1 = Password Protection Mode not Permanently Enabled.
1 PSTMLB Persistent Protection
Mode Lock Bit OTP 1 0 = Persistent Protection Mode Permanently Enabled.
1 = Persistent Protection Mode not Permanently Enabled.
0 RFU Reserved OTP 1 Reserved for Future Use
Note
59. Default value depends on ordering part number, see Section 11.5 Initial Delivery State on page 139.
Table 75. Password Register (PASS)
Bits Field
Name Function Type Default State Description
63 to 0 PWD Hidden Password OTP FFFFFFFF-
FFFFFFFFh
Non-volatile OTP storage of 64-bit password. The
password is no longer readable after the password
protection mode is selected by programming ASP
register bit 2 to zero.
Table 76. PPB Lock Register (PPBL)
Bits Field Name Function Type Default State Description
7 to 1 RFU Reserved Volatile 00h Reserved for Future Use
0 PPBLOCK Protect PPB Array Volatile Persistent Protection Mode = 1
Password Protection Mode = 0
0 = PPB array protected until next power
cycle or hardware reset
1 = PPB array may be programmed or
erased
Table 77. PPB Access Register (PPBAR)
Bits Field Name Function Type Default
State Description
7 to 0 PPB Read or Program
per sector PPB Non-volatile FFh
00h = PPB for the sector addressed by the PPBRD or
PPBP command is programmed to ‘0’, protecting that
sector from program or erase operations.
FFh = PPB for the sector addressed by the PPBRD or
PPBP command is erased to ‘1’, not protecting that
sector from program or erase operations.
Document Number: 001-98283 Rev. *Q Page 139 of 146
S25FL128S/S25FL256S
11.5 Initial Delivery State
The device is shipped from Cypress with non-volatile bits set as follows:
The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh).
The OTP address space has the first 16 bytes programmed to a random number. All other bytes are erased to FFh.
The ID-CFI address space contains the values as defined in the description of the ID-CFI address space.
The Status Register 1 contains 00h (all SR1 bits are cleared to 0’s).
The Configuration Register 1 contains 00h.
The Autoboot register contains 00h.
The Password Register contains FFFFFFFF-FFFFFFFFh.
All PPB bits are 1.
The ASP Register contents depend on the ordering options selected:
Table 78. DYB Access Register (DYBAR)
Bits Field Name Function Type Default State Description
7 to 0 DYB Read or Write
per sector DYB Volatile FFh
00h = DYB for the sector addressed by the DYBRD or DYBP
command is cleared to ‘0’, protecting that sector from program or
erase operations.
FFh = DYB for the sector addressed by the DYBRD or DYBP
command is set to ‘1’, not protecting that sector from program or
erase operations.
Table 79. Non-Volatile Data Learning Register (NVDLR)
Bits Field Name Function Type Default State Description
7 to 0 NVDLP
Non-Volatile
Data Learning
Pattern
OTP 00h
OTP value that may be transferred to the host during DDR read
command latency (dummy) cycles to provide a training pattern to
help the host more accurately center the data capture point in
the received data bits.
Table 80. Volatile Data Learning Register (NVDLR)
Bits Field Name Function Type Default State Description
7 to 0 VDLP
Volatile Data
Learning Pat-
tern
Volatile
Takes the
value of
NVDLR
during POR
or Reset
Volatile copy of the NVDLP used to enable and deliver the Data
Learning Pattern (DLP) to the outputs. The VDLP may be
changed by the host during system operation.
Table 81. ASP Register Content
Ordering Part Number Model ASPR Default Value
00, 20, 30, R0, A0, B0, C0, D0, 01, 21, 31, R1, A1, B1, C1, D1, 90, Q0, 70, 60,
80, 91, Q1, 71, 61, 81, G0, G1, 40, 41, H0, H1, E0, E1, F0, F1 FE7Fh
Document Number: 001-98283 Rev. *Q Page 140 of 146
S25FL128S/S25FL256S
12. Ordering Information
The ordering part number is formed by a valid combination of the following:
S25FL 256 S AG M F I 0 0 1
Packing Type
0 = Tray
1 = Tube
3 = 13” Tape and Reel
Model Number (Sector Type)
0 = Uniform 64-KB sectors
1 = Uniform 256-KB sectors
Model Number (Latency Type, Package Details, RESET# and V_IO Support)
0 = EHPLC, SO/WSON footprint
2 = EHPLC, 5 x 5 ball BGA footprint
3 = EHPLC, 4 x 6 ball BGA footprint
G = EHPLC, SO footprint with RESET#
R = EHPLC, SO footprint with RESET# and VIO
A = EHPLC, 5 x 5 ball BGA footprint with RESET# and VIO
B = EHPLC, 4 x 6 ball BGA footprint with RESET# and VIO
C = EHPLC, 5 x 5 ball BGA footprint with RESET#
D = EHPLC, 4 x 6 ball BGA footprint with RESET#
9 = HPLC, SO/WSON footprint
4 = HPLC, 5 x 5 ball BGA footprint
8 = HPLC, 4 x 6 ball BGA footprint
H = HPLC, SO footprint with RESET#
Q = HPLC, SO footprint with RESET# and VIO
7 = HPLC, 5 x 5 ball BGA footprint with RESET# and VIO
6 = HPLC, 4 x 6 ball BGA footprint with RESET# and VIO
E = HPLC, 5 x 5 ball BGA footprint with RESET#
F = HPLC, 4 x 6 ball BGA footprint with RESET#
Temperature Range / Grade
I = Industrial (-40°C to + 85°C)
V = Industrial Plus (-40°C to + 105°C)
A = Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
B = Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
M = Automotive, AEC-Q100 Grade 1 (-40°C to +125°C)
Package Materials[64]
F = Halogen-Free, Lead (Pb)-free
H = Halogen-Free, Lead (Pb)-free
Package Type
M = 16-pin SO package
N = 8-contact WSON 6 x 8 mm package
B = 24-ball BGA 6 x 8 mm package, 1.00 mm pitch
Speed
AG = 133 MHz
DP = 66 MHz DDR
DS = 80 MHz DDR
Device Technology
S = 65 nm MirrorBit Process Technology
Density
128 = 128 Mb
256 = 256 Mb
Device Family
S25FL
Cypress Memory 3.0 Volt-Only, Serial Peripheral Interface (SPI) Flash Memory
Notes
60. EHPLC = Enhanced High Performance Latency Code table.
61. HPLC = High Performance Latency Code table.
62. Uniform 64-KB sectors = A hybrid of 32 x 4-KB sectors with all remaining sectors being 64 KB, with a 256B programming buffer.
63. Uniform 256-KB sectors = All sectors are uniform 256-KB with a 512B programming buffer.
64. Halogen free definition is in accordance with IEC 61249-2-21 specification.
Document Number: 001-98283 Rev. *Q Page 141 of 146
S25FL128S/S25FL256S
Valid Combinations — Standard
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Valid Combinations — Automotive Grade / AEC-Q100
The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The
table will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific
combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949
compliance.
Table 82. S25FL128S/S25FL256S Valid Combinations — Standard
Base Ordering
Part Number
Speed
Option
Package and
Temperature Model Number Packing Type Package Marking[65]
S25FL128S
or
S25FL256S
AG
MFI, MFV 00, 01, G0, G1, R0, R1 0, 1, 3 FL + (Density) + SA + (Temp) + F + (Model Number)
NFI, NFV 00, 01 0, 1, 3 FL + (Density) + SA + (Temp) + F + (Model Number)
BHI, BHV 20, 21, 30, 31, A0, A1, B0,
B1, C0, C1, D0, D1 0, 3 FL + (Density) + SA + (Temp) + H + (Model Number)
DP
MFI G0, G1 0, 1, 3 FL + (Density) + SD + (Temp) + F + (Model Number)
MFV 00, 01 0, 1, 3
NFI, NFV 00 0, 1, 3 FL + (Density) + SD + (Temp) + F + (Model Number)
BHI, BHV 21, C0, C1 0, 3 FL + (Density) + SD + (Temp) + H + (Model Number)
DS
MFI, MFV 00, 01, G0, G1, R0, R1 0, 1, 3 FL + (Density) + SS + (Temp) + F + (Model Number)
NFI, NFV 00, 01 0, 1, 3 FL + (Density) + SS + (Temp) + F + (Model Number)
BHI, BHV 20, 21, 30, 31, A0, A1, B0,
B1, C0, C1, D0, D1 0, 3 FL + (Density) + SS + (Temp) + H + (Model Number)
Notes
65.Example, S25FL256SAGMFI000 package marking would be FL256SAIF00.
66.Contact the factory for additional Extended (-40°C to + 125°C) temperature range OPN offerings.
Table 83. S25FL128S, S25FL256S Valid Combinations — Automotive Grade / AEC-Q100
Base Ordering
Part Number
Speed
Option
Package and
Temperature Model Number Packing Type Package Marking
S25FL128S or
S25FL256S
AG
MFA, MFB, MFM 00, 01, G0, G1, R0, R1 0, 1, 3 FL + (Density) + SA + (Temp) + F + (Model Number)
NFA, NFB, NFM 00, 01 0, 1, 3 FL + (Density) + SA + (Temp) + F + (Model Number)
BHA, BHB, BHM 20, 21, 30, 31, A0, A1, B0,
B1, C0, C1, D0, D1 0, 3 FL + (Density) + SA + (Temp) + H + (Model Number)
DP
NFB 00 0, 1, 3 FL + (Density) + SD + (Temp) + F + (Model Number)
BHB 21, C0 0, 3 FL + (Density) + SD + (Temp) + H + (Model Number)
MFB 01 0, 1, 3 FL + (Density) + SD + (Temp) + F + (Model Number)
DS
MFA, MFB, MFM 00, 01, G0, G1, R0, R1 0, 1, 3 FL + (Density) + SS + (Temp) + F + (Model Number)
NFA, NFB, NFM 00, 01 0, 1, 3 FL + (Density) + SS + (Temp) + F + (Model Number)
BHA, BHB, BHM 20, 21, 30, 31, A0, A1, B0,
B1, C0, C1, D0, D1 0, 3 FL + (Density) + SS + (Temp) + H + (Model Number)
Document Number: 001-98283 Rev. *Q Page 142 of 146
S25FL128S/S25FL256S
13. Revision History
Document Title: S25FL128S/S25FL256S, 128 Mb (16 MB)/256 Mb (32 MB), 3.0V SPI Flash Memory
Document Number: 001-98283
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
** – BWHA 05/25/2011 Initial release
*A – BWHA 11/18/2011
Global:
Promoted datasheet to Preliminary status
Corrected minor typos and grammatical errors
Performance Summary:
Updated the Serial Read 50 MHz current consumption value from 14 mA (max) to 16 mA
(max)
Updated the Serial Read 133 MHz current consumption value from 25 mA (max) to 33
mA (max)
Power-Up and Power-DownRemoved the statement “The device draws ICC1 (50 MHz
value) during tPU”
DC Characteristics:
Updated the ICC1 Active Power Supply Current (READ) Serial SDR @ 50 MHz maximum
value from 14 mA to 16 mA
Updated the ICC1 Active Power Supply Current (READ) Serial SDR @ 133 MHz
maximum value from 25 mA to 33 mA
SDR AC Characteristics:
Added the tCSH CS# Active Hold Time (Relative to SCK) maximum value of 3000 ns,
with a note indicating that this only applies during the Program/Erase Suspend/Resume
commands
DDR AC Characteristics: Added the tCSH CS# Active Hold Time (Relative to SCK)
maximum value of 3000 ns, with a note indicating that this only applies during the
Program/Erase Suspend/Resume commands
Capacitance Characteristics: Added a Note 1, pointing users to the IBIS models for more
details on capacitance
Physical Interface:
Corrected pin 5 of the SOIC 16 Connection Diagram from NC to DNU
Corrected pin 13 of the SOIC 16 Connection Dig ram from DNU to NC
Replaced the WNF008 drawing with the WNG008 drawing
Updated the FAB024 drawing to the latest version
ASP Register: Corrected the statement “The programming time of the ASP Register is
the same as the typical byte programming time” to “The programming time of the ASP
Register is the same as the typical page programming time”
Persistent Protection Bits: Corrected the statement “Programming a PPB bit requires the
typical byte programming time” to “Programming a PPB bit requires the typical page
programming time”
Register Read or Write:
Corrected the statement “…the device remains busy and unable to receive most new
operation commands.” to “..the device remains busy. Under this condition, only the CLSR,
WRDI, RDSR1, RDSR2, and software RESET commands are valid commands.”
Page Program (PP 02h or 4PP 12h):
Removed the statement “If more than a page of data is sent to the device, previously
latched data are discarded and the last page worth of data (either 256 or 512 bytes) are
programmed in the page. This is the result of the device being equipped with a page
program buffer that is only page size in length.”
Embedded Algorithm Performance Tables:
Updated the t_W WRR Write Time typical value from 100 ms to 140 ms and the maximum
value from 200 ms to 500 ms
Updated t_PP Page Programming Time (256 bytes) maximum value from 550 µs to 750
µs.
Added Note 3 and Note 4 to Table 10.7 to note shared performance values across other
commands
Updated the t_ESL Erase Suspend Latency maximum value from 40 µs to 45 µs.
Document Number: 001-98283 Rev. *Q Page 143 of 146
S25FL128S/S25FL256S
*A (cont.) – BWHA 11/18/2011
Device ID and Common Flash Interface (ID-CFI) Address Map:
CFI Alternate Vendor-Specific Extended Query Parameter 9Ah - EHPLC DDR table:
corrected the data of offset 01h from 32h to 2Ah
Ordering Information:
Added E0, E1, F0, F1, G0, and G1 as valid model numbers
Broke out the 2 character length model number decoder into separate characters to
clarify format and save space
Corrected the valid S25FLxxxSAGMFI model numbers from R0 and R1 to G0 and G1
Updated the Package Marking format to help identify speed differences across similar
devices
Added G0 and G1 as valid model number combinations for SDR SOIC OPNs
Removed 20, 21, 30, and 31 as valid model numbers combinations for DDR BGA OPNs
*B – BWHA 03/22/2012
DC Characteristics:
Updated ICC1 values, added note
AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table: Moved tSU
value to tCSH, added note
AC Characteristics (Single Die Package, VIO 1.65V to 2.7V, VCC 2.7V to 3.6V) table:
Moved tSU value to tCSH, added note
AC Characteristics 66 MHz Operation table: added note
Command Set Summary:
S25FL128S and S25FL256S Command Set (sorted by function) table: added note
Device ID and Common Flash Interface (ID-CFI) Address Map:
Updated CFI Alternate Vendor-Specific Extended Query Parameter 0 table
Updated CFI Alternate Vendor-Specific Extended Query Parameter 84h Suspend
Commands table
Updated CFI Alternate Vendor-Specific Extended Query Parameter 8Ch Reset Timing
table
Ordering Information:
Valid Combinations table: added BHV to Package and Temperature for Models C0, Do
and C1, D1
*C – BWHA 06/13/2012 SDR AC Characteristics:
Updated tHO value from 0 Min to 2 ns Min
*D – BWHA 07/12/2012 Global:
Promoted datasheet designation from Preliminary to Full Production
*E – BWHA 12/20/2013
Global:
80 MHz DDR Read operation added
Performance Summary:
Updated Maximum Read Rates DDR (VIO = VCC = 3V to 3.6V) table. Current
Consumption table: added Quad DDR Read 80 MHz.
Migration Notes:
FL Generations Comparison table: updated DDR values for FL-S
SDR AC Characteristics:
Updated Clock Timing figure
DDR AC Characteristics:
Updated AC Characteristics — DDR Operation table
DDR Output Timing:
Updated SPI DDR Data Valid Window figure and Notes
Ordering Information:
Added 80 MHz to Speed option. Valid Combinations table: added DS Speed Option.
*F – BWHA 03/17/2014
SDR AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table: removed tV min
AC Characteristics (Single Die Package, VIO 1.65V to 2.7V, VCC 2.7V to 3.6V) table:
removed tV min
Ordering Information:
Fix typo: Add DDR for 80 MHz for the DS Speed option. Valid Combinations table:
Addition of more OPNs.
Document Title: S25FL128S/S25FL256S, 128 Mb (16 MB)/256 Mb (32 MB), 3.0V SPI Flash Memory
Document Number: 001-98283
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Document Number: 001-98283 Rev. *Q Page 144 of 146
S25FL128S/S25FL256S
*G – BWHA 10/10/2014
Global:
Added Extended Temperature Range: -40°C to 125°C
SDR AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table: corrected tSU
Min
Configuration Register 1 (CR1):
Latency Codes for DDR Enhanced High Performance table: added 80 MHz
DDR Fast Read (DDRFR 0Dh, 4DDRFR 0Eh):
Updated figures:
Continuous DDR Fast Read Subsequent Access (3-byte Address [ExtAdd=0,
EHPLC=11b])
Continuous DDR Fast Read Subsequent Access (4-byte Address [ExtAdd=1],
EHPLC=01b)
Initial Delivery State:
ASP Register Content table: removed ASPR Default Value row FE4Fh
Ordering Information FL128S and FL256S:
Added Extended Temperature Range: -40°C to 125°C
Updated Valid Combinations table
*H – BWHA 05/09/2015
Global:
Updated description of DDR commands to reflect maximum operating clock frequency
of 80 MHz (from 66 MHz)
Command Set Summary:
S25FL128S and S25FL256S Command Set (sorted by function) table: changed max
DDR frequency from 66 MHz to 80 MHz for all applicable DDR commands
Software Interface Reference:
S25FL128S and S25FL256S Instruction Set (sorted by instruction) table: changed max
DDR frequency from 66 MHz to 80 MHz for all applicable DDR commands
Valid Combinations:
Corrected the Package Marking for DS Speed Option
*I 4871631 BWHA 08/24/2015
Replaced “Automotive Temperature Range” with “Industrial Plus Temperature Range” in
all instances across the document.
Updated Signal Descriptions:
Updated Versatile I/O Power Supply (VIO):
Updated description.
Updated to Cypress template.
*J 5348895 TOCU 09/22/2016
Added ECC related information in all instances across the document.
Added Automotive Temperature Range related information in all instances across the
document.
Added Logic Block Diagram.
Updated Electrical Specifications:
Added Thermal Resistance.
Updated Operating Ranges:
Updated Table 5:
Updated minimum value of VCC (low) parameter.
Changed minimum value of tPD parameter from 1.0 µs to 15.0 µs.
Updated Timing Specifications:
Updated SDR AC Characteristics:
Updated Table 11:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to +125°C)
temperature range, all SCK clock frequencies are 5% slower than the Max values
shown.” and its references.
Updated Table 12:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to +125°C)
temperature range, all SCK clock frequencies are 5% slower than the Max values
shown.” and its references.
Updated DDR AC Characteristics:
Updated Table 13:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to +125°C)
temperature range, all SCK clock frequencies are 5% slower than the Max values
shown.” and its references.
Document Title: S25FL128S/S25FL256S, 128 Mb (16 MB)/256 Mb (32 MB), 3.0V SPI Flash Memory
Document Number: 001-98283
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Document Number: 001-98283 Rev. *Q Page 145 of 146
S25FL128S/S25FL256S
*J (cont.) 5348895 TOCU 09/22/2016
Changed minimum value of tHO parameter corresponding to 66 MHz from 0 ns to 1.5 ns.
Updated Address Space Maps:
Updated Registers:
Added ECC Status Register (ECCSR).
Updated Commands:
Updated Command Set Summary:
Updated Extended Addressing:
Updated Table 44:
Removed Note “For Industrial Plus (-40°C to +105°C) and Extended (-40°C to +125°C)
temperature range, all Maximum Frequency values are 5% slower than the Max values
shown.” and its references.
Updated Register Access Commands:
Updated Write Registers (WRR 01h):
Updated description.
Added ECC Status Register Read (ECCRD 18h).
Updated Program Flash Array Commands:
Updated Program Granularity:
Added Automatic ECC.
Added Data Integrity.
Updated Software Interface Reference:
Added Device ID and Common Flash Interface (ID-CFI) ASO Map — Automotive Only.
Updated Ordering Information:
Added Automotive Temperature Range related information in valid combinations.
Updated Valid Combinations — Standard:
Updated Table 82:
Updated entire table.
Added Valid Combinations — Automotive Grade / AEC-Q100.
Updated to new template.
*K 5662507 ECAO 03/16/2017
Updated Table 6, DC Characteristics — Operating Temperature Range –40°C to +85°C
on page 26.
Added Table 7, DC Characteristics — Operating Temperature Range -40°C to +105°C
and -40°C to +125°C on page 27.
Updated Section 6.1.2 SOIC 16 Physical Diagram on page 38.
Updated Section 6.2.2 WSON Physical Diagram on page 40.
Updated Section 6.3.2 FAB024 24-Ball BGA Package Physical Diagram on page 42.
Updated Section 6.4.2 FAC024 24-Ball BGA Package Physical Diagram on page 44.
Updated tSU in Table 11, AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V)
on page 31.
Updated Cypress logo and Sales page.
*L 5704165 BWHA 4/27/2017
Updated Section 9.5.3 Quad Page Program (QPP 32h or 38h, or 4QPP 34h)
on page 101.
Updated Sales page.
Updated Cypress logo.
*M 5746369 ECAO 05/23/2017 Added Model Number “21” in Table 83, S25FL128S, S25FL256S Valid Combinations —
Automotive Grade / AEC-Q100 on page 141.
*N 5770580 ECAO 06/14/2017
Updated Section 12. Ordering Information on page 140.
Added part number (S25FL128SDPMFB010) in Table 83, S25FL128S, S25FL256S Valid
Combinations — Automotive Grade / AEC-Q100 on page 141.
*O 6099450 BWHA 03/15/2018 Table 11 and Table 12: Removed the Max value of tCSH and updated the Max value of
tSU as “3000”.
*P 6264291 BWHA 08/07/2018
Updated Section 1.3 Glossary on page 6: Replaced MSB with MSb and LSB with LSb.
Added Section 5.5.3 DDR Data Valid Timing Using DLP on page 36.
Updated Section 12. Ordering Information on page 140: Added note 6.
Updated Table 81: Added Model # G0, G1, 40, 41, H0, H1, E0, E1, F0, F1.
Updated Table 24: Updated CR1[4] from RFU to DNU.
Updated the following figures:
Figure 5, Figure 31, Figure 32, Figure 35, Figure 36, Figure 44, Figure 47, Figure 50
through Figure 54, Figure 58 through Figure 69, and Figure 97 through Figure 125.
*Q 6556036 BWHA 04/30/2019 Updated Section 4.2 Thermal Resistance on page 23.
Updated Copyright information.
Document Title: S25FL128S/S25FL256S, 128 Mb (16 MB)/256 Mb (32 MB), 3.0V SPI Flash Memory
Document Number: 001-98283
Rev. ECN No. Orig. of
Change
Submission
Date Description of Change
Document Number: 001-98283 Rev. *Q Revised April 30, 2019 Page 146 of 146
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