MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 -0.5 1.5MAX. 8.6 0.3 9.8 0.5 1.3 +0.3 0 -0 (1.5) FS70VSJ-2 1 B 5 0.5 q w e wr 4V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .............................................................. 17m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ........... 115ns 2.6 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 100 V VGSS ID Gate-source voltage Drain current VDS = 0V 20 70 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 280 70 A A IS ISM Source current Source current (Pulsed) 70 280 A A PD Tch Maximum power dissipation Channel temperature 125 -55 ~ +150 W C -55 ~ +150 C g Tstg -- Parameter Conditions L = 100H Storage temperature Weight Typical value 1.2 Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, I D = 35A, VGS = 10V, RGEN = RGS = 50 IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = -100A/s Unit Min. Typ. Max. 100 -- -- -- -- 0.1 V A -- 1.0 -- 1.5 0.1 2.0 mA V -- 13 17 m -- -- 14 0.46 18 0.60 m V -- -- 68 8200 -- -- S pF -- -- 1150 600 -- -- pF pF -- -- 54 140 -- -- ns ns -- 830 -- ns -- -- 350 1.0 -- 1.5 ns V -- -- -- 115 1.00 -- C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 DRAIN CURRENT ID (A) 100 50 100 150 200 tw = 10ms 101 7 5 3 2 1ms 100 7 5 3 100ms 10ms TC = 25C Single Pulse DC 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 50 TC = 25C Pulse Test 60 3V 40 20 0.4 TC = 25C Pulse Test PD = 125W VGS = 10V 6V 5V 4V 0 102 7 5 3 2 CASE TEMPERATURE TC (C) 80 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 40 3.5V VGS = 10V 5V 4V 30 3V 20 2.5V 10 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) TC = 25C Pulse Test 1.6 1.2 ID = 100A 0.8 70A 0.4 30A 0 0 2 4 6 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 20 0 2 4 6 8 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 TC = 25C 75C 125C 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C 7 f = 1MHZ 5 3 2 Ciss 7 5 3 2 Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 4 2 105 VGS = 0V 103 7 5 3 2 10V 8 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 104 12 TRANSFER CHARACTERISTICS (TYPICAL) 60 2 VGS = 4V DRAIN CURRENT ID (A) 80 0 16 0 10 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 DRAIN CURRENT ID (A) 8 20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 104 7 5 3 2 Tch = 25C VDD = 50V VGS = 10V RGEN = RGS = 50 td(off) 103 7 5 3 2 tf tr 102 7 5 3 2 101 0 10 td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 4 VDS = 20V 50V 80V 2 0 40 80 120 160 60 40 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125C 75C 25C 20 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 80 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 100 Tch = 25C ID = 70A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 PDM 10-1 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999