IRF7420PbF-1 HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25C) A D -12 V S 1 8 14 m S 2 7 D S 3 6 D G 4 5 D 17.5 m 26 m 38 nC -11.5 A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF7420PbF-1 SO-8 Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7420PbF-1 IRF7420TRPbF-1 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -11.5 -9.2 -46 2.5 1.6 20 8 -55 to +150 V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient 1 www.irf.com (c) 2014 International Rectifier Max. Units 50 C/W Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -12 --- --- -0.4 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 38 8.1 8.7 8.8 8.8 291 225 3529 1013 656 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 14 VGS = -4.5V, ID = -11.5A 17.5 m VGS = -2.5V, ID = -9.8A 26 VGS = -1.8V, ID = -8.1A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -11.5A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -11.5A --- nC VDS = -6V --- VGS = -4.5V 13 V DD = -6V, VGS = -4.5V ns 13 ID = -1.0A 437 RD = 6 338 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr Min. Typ. Max. Units -2.5 -46 --- --- --- --- 62 61 -1.2 93 92 A V ns C Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V 10 1 0.1 -1.0V VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 10 1 -1.0V 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.01 0.1 1 10 0.1 100 -VDS, Drain-to-Source Voltage (V) -I D , Drain-to-Source Current (A) 100 TJ = 150 C TJ = 25 C 1 0.1 0.5 V DS = -10V 20s PULSE WIDTH 1.0 1.5 2.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 www.irf.com (c) 2014 International Rectifier 10 100 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 1. Typical Output Characteristics 10 1 -VDS, Drain-to-Source Voltage (V) 2.5 2.0 ID = -11.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 5500 4500 4000 Ciss 3500 -VGS , Gate-to-Source Voltage (V) 5000 C, Capacitance(pF) 6 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 2500 2000 Coss 1500 Crss 1000 500 4 3 2 1 0 10 100 0 10 20 30 40 50 QG , Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) V DS=-9.6V V DS=-6V 5 0 1 ID = -11.5A 100 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1ms 10 10ms TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.4 100us www.irf.com (c) 2014 International Rectifier 1 0.1 1 10 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback June 30, 2014 100 IRF7420PbF-1 12 VDS -ID , Drain Current (A) VGS 9 RD D.U.T. RG - + VDD VGS 6 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 TC , Case Temperature ( C) 150 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response(Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 0.020 0.015 ID = -11.5A 0.010 0.005 0.0 2.0 4.0 6.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 8.0 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance) 0.025 0.08 0.06 VGS = -1.8V 0.04 VGS = -2.5V 0.02 VGS = -4.5V 0 0.0 10.0 20.0 30.0 40.0 50.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V www.irf.com (c) 2014 International Rectifier IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit Submit Datasheet Feedback June 30, 2014 1.0 400 0.9 350 0.8 300 0.7 Power (W) -VGS(th) ( V ) IRF7420PbF-1 ID = -250A 0.6 250 200 0.5 150 0.4 100 0.3 50 0 0.2 -75 -50 -25 0 25 50 75 100 125 150 0.0001 0.0010 0.0100 0.1000 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature 7 www.irf.com (c) 2014 International Rectifier 1.0000 10.0000 100.0000 Time (sec) Fig 16. Typical Power Vs. Time Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BASIC .025 BAS IC 0.635 BAS IC e1 6X MILLIMETERS MAX A 5 INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C A1 y 0.10 [.004] 8X c 8X L 7 C A B FOOT PRINT NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET ) INTERNATIONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY SIT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Qualification information Industrial Qualification level Moisture Sensitivity Level (per JEDE C JE S D47F SO-8 RoHS compliant guidelines) MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback June 30, 2014