MICROWAVE POWER GaN HEMT
MICROWAVE SEMICONDUCTOR
TGI1314-50L
TECHNICAL DATA
Rev. December 9, 2011
FEATURES
HIGH POWER BROAD BAND INTERNALLY MATCHED HEMT
Pout=47.0dBm at Pin=42.0dBm HERMETICALLY SEALED PACKAGE
HIGH GAIN
LOW INTERMODULATION DISTORTION
GL=8.0dB at 13.75GHz to 14.5GHz IM3(Min.)=−25dBc at Po=40.0dBm
Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power Pout dBm 46.0 47.0 －
Gain Flatness ΔG dB － － ±0.8
Drain Current IDS1 A － 5.0 6.0
Power Added Efficiency ηadd % － 29 －
Gate Current IgRF
VDS = 24V
IDSset≅2.0A
f = 13.75 to 14.5GHz
@ Pin=42dBm mA -40 － +100
Linear Gain GL @Pin=20dBm dB 7.0 8.0 －
3rd Order Intermodulation
Distortion IM3 dBc -25 － －
Drain Current IDS2
Two-Tone Test
Po= 40.0dBm
(Single Carrier Level) A － 5.0 6.0
Channel Temperature Rise ΔTch (VDS X IDS + Pin – Pout) X Rth(c-c) °C － 130 150
Recommended gate resistance(Rg) : Rg= 13.3 Ω (TYP.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 5
V
IDS= 5.0A S ⎯ 4.5 ⎯
Pinch-off Voltage VGSoff VDS= 5V
IDS= 23mA V -1 -4 -6
Saturated Drain Current IDSS VDS= 5V
VGS= 0V A ⎯ 15 ⎯
Gate-Source Breakdown
Voltage VGSO IGS= -10mA V -10
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ ⎯ 1.6
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by
implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change
without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
TGI1314-50L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 50
Gate-Source Voltage VGS V -10
Drain Current IDS A 15
Total Power Dissipation (Tc= 25 °C) PT W 140
Channel Temperature Tch °C 250
Storage Tstg °C -65 to +175
PACKAGE OUTLINE ( 7- AA07A )
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
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