SFH 3201
NPN-Silizium -Fototransistor im SMT-Gehäuse
Silicon NPN Phototransistor in SMT Package
Vorläufige Daten / Preliminary Data
2001-02-22 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 460 nm bis 1080 nm
• Hohe Linearität
• SMT-Bauform ohne Basisanschluß, geeignet
für Vapor Phase-Löten, IR-Reflow-Löten
(JEDEC level 4) und Wellenlöten (JEDEC
level 4)
• Nur gegurtet lieferbar
Anwendungen
• Umgebungslicht-Detektor
• Lichtschranken für Gleich- und
Wechsel-lichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 3201 Q62702-P5043 P-DSO-6
SFH 3201-2/3 Q62702-P5209 P-DSO-6
Features
•Especially suitable for applications from
460 nm to 1080 nm
•High linearity
•SMT package without base connection,
suitable for vapor phase, IR reflow soldering
(JEDEC level 4) and wave soldering (JEDEC
level 4)
•Available only on tape and reel
Applications
•Ambient light detector
•Photointerrupters
•Industrial electronics
•For control and drive circuits
2001-02-22 2
SFH 3201
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 85 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 20 V
Kollektor-Emitterspannung, t< 120 s
Collector-emitter voltage VCE 70 V
Kollektorstrom
Collector current IC50 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 120 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb RthJA 500 K/W
SFH 3201
2001-02-22 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ460 …1080 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A0.55 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B
L×W1×1mm×mm
Halbwinkel
Half angle ϕ± 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance CCE 15 pF
Dunkelstrom
Dark current
VCE = 20 V, E=0
ICEO 3 (≤ 200) nA
2001-02-22 4
SFH 3201
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-1 -2 -3
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
Ev = 1000 Ix, Normlicht/
standard light A, VCE = 5 V
IPCE
IPCE
63 …125
1.65
100 …200
2.6
160 …320
4.2
µA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf16 24 34 µs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2
VCEsat 170
(≤ 250) 170
(≤ 250) 170
(≤ 250) mV
1) IPCEmin ist der minimale F ot os tr om der jew eiligen Gruppe.
1) IPCEmin is the min. pho to cu rrent of the specified group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 3201
2001-02-22 5
TA=25°C, λ = 950 nm
Re l. Spectral Sensitivity ,
Srel = f (λ)
Photocurrent IPCE = f (TA),
VCE = 5 V, normaliz ed t o 25 °C
Photocurrent
IPCE = f (VCE)
λ
OHF02332
0
rel
S
400
10
20
30
40
50
60
70
80
%
100
500 600 700 800 900 nm 1100
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
V
OHF00327
ce
001020 30 40 50 60 70V
mA
pce
Ι
1.0 mW/cm
0.5
1.0
1.5
2.0
2.5
3.0
2
2
0.5 mW/cm
0.25 mW/cm
2
0.1 mW/cm
2
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Cap aci tance
CCE = f (VCE), f = 1 MHz
E
OHF00326
e
-3
10
pce
Ι
-4
10
10
1
mA
2
mW/cm10
-2
10
0
10
-3
10
-2
10
-1
0
10 1
2
3
V
OHF02341
CE
0
CEO
Ι
-2
10
10
-1
10
0
10
1
10
2
nA
10 20 30 40 50 70V
V
OHF02344
CE
CE
C
0
10 -2 -1
10 0
10 1
10 10 2
V
pF
5
10
15
20
Total Pow er Di ssip ation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
T
OHF00309
A
0
tot
P
020 40 60 80 C 100
mW
20
40
60
80
100
120
140
T
OHF02342
A
0
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
nA
20 40 60 80 100˚C
2001-02-22 6
SFH 3201
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
3.4 (0.134)
3.0 (0.118)
5.8 (0.228)
6.2 (0.244)
0.15 (0.006)
0.13 (0.005)
0...0.1 (0...0.004)
2.1 (0.083)
1.7 (0.067)
4
6
1
3
GEOY6982
4.2 (0.165)
3.8 (0.150)
25
- Emitter Collector
12 3 4 6
5
---
0.3 (0.012)
0.5 (0.020)
spacing
spacing
0.4 (0.016)
0.7 (0.028)
B
A
0.2 M
A
Active area 0.55 (0.022)
0.1 M
B
2.54 (0.100)
1.27 (0.050)
SFH 3201
2001-02-22 7
Bitte Verarbeitungshinweise für SMT-Bauele m ent e beachten!
Please obs erve the handl ing guidelines for SM T dev ic es !
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
Löthinweise
Soldering Conditions
Bauform
Type Drypack
Level acc.
to
IPS-stand.
020
Tauch-, Schwalllötung
Dip, Wave Soldering Reflowlötung
Reflow Soldering Kolbenlötung
Iron
Soldering
Peak Temp.
(solderbath) Max. Time in
Peak Zone Peak Temp.
(package
temp.)
Max. Time
in Peak
Zone
(Iron temp.)
SFH 3201 4 260 10 s 245 °C10 s n.a.
