CM1000DXL-24S Dual IGBTMODTM NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1000 Amperes/1200 Volts B G J D K K L AM AT AU A C E F AM AM AU AV AH AU L AE Y AJ AL 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 X(4 PLACES) 40 M 39 1 AM R Q 38 AK 37 Z 36 35 DETAIL "A" S 34 2 U T 33 V D E F AA P N C AS AR 3 32 AQ Z W(6 PLACES) 31 30 4 AP AN H 29 28 5 AB 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 DETAIL "B" R AC 6 DETAIL "B" DETAIL "A" AD H Es1 G1 TH2 (62) (61) (57) C1(1) C1(2) E2(3) Th NTC TH1 Cs1 (56) (52) Es2 G2 Cs2 (47) (46) (42) Tr1 Tr2 Di1 Di2 E1C2 (33) E1C2 (32) AC AF AG Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 The tolerance of size between terminals is assumed to 0.4 E2(4) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions A B C D E F G H J K L M N P Q R S T U V W X 5.98 5.39 4.79 4.61 4.330.02 3.72 0.6 0.26 0.53 0.14 0.3 0.016 1.53 0.86 1.95 1.62 0.83 0.23 0.47 0.41 M6 Metric 0.22 152.0 137.0 121.7 117.2 110.00.5 94.5 15.14 6.5 13.5 3.6 7.75 4.05 39.0 22.0 49.72 41.22 21.14 6.0 12.0 10.53 M6 5.5 Dia. Y Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV 06/11 Rev. 3 Inches Millimeters 0.75 19.24 0.86 22.0 1.08 27.53 0.14 3.5 0.51 13.0 0.19 3.0 0.42 10.74 0.67+0.04/-0.02 17.0+1.0/-0.5 0.81 20.5 0.29 7.4 0.05 1.2 0.02 0.65 0.04 1.15 0.15 3.81 0.5 12.5 0.12 3.0 0.088 Dia. 2.25 Dia. 0.102 Dia. 2.6 Dia. 0.16 Dia. 4.3 Dia. 0.67 16.9 0.6 15.24 0.75 19.05 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM1000DXL-24S is a 1200V (VCES), 1000 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1000 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DXL-24S Dual IGBTMODTM NX-S Series Module 1000 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES 20 Volts IC 900 Amperes ICRM 2000 Amperes Ptot 7500 Watts Collector Current (DC, TC = 124C)*2,*11 Collector Current (Pulse, Repetitive)*3 Total Power Dissipation (TC = 25C)*2,*4 Emitter Current (TC = 25C)*2,*4,*11 *1 900 Amperes IERM*1 IE 2000 Amperes Symbol Rating Units Maximum Junction Temperature Tj(max) 175 C Maximum Case Temperature*2 TC(max) 125 C Emitter Current (Pulse, Repetitive)*3 Module Characteristics Operating Junction Temperature Tj(op) -40 to +150 C Storage Temperature Tstg -40 to +125 C Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *11 This module has 1000A size IGBT and FWDi chips. This limitation is based on the terminal design. 83.8 98.6 81.8 57.6 42.2 27.2 0 0 0 20.9 Th 32.6 Tr1 46.0 Di1 72.6 73.6 86.0 87.0 LABEL SIDE Tr1 Di1 Tr1 Tr1 Tr1 26.4 Di1 Di1 Di1 40.0 Tr2 Tr2 Tr2 Tr2 Tr2 72.2 Di2 Di2 Di2 Di2 Di2 85.8 94.0 79.2 53.2 38.0 23.0 73.2 86.8 0 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 2 06/11 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DXL-24S Dual IGBTMODTM NX-S Series Module 1000 Amperes/1200 Volts Electrical Characteristics, Tj = 25C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Collector-Emitter Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V -- -- 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V -- -- 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25C*5 -- 1.85 2.30 Volts (Terminal) IC = 1000A, VGE = 15V, Tj = 125C*5 -- 2.05 -- Volts 150C*5 -- 2.10 -- Volts IC = 1000A, VGE = 15V, Tj = 25C*5 -- 1.70 2.15 Volts 125C*5 -- 1.90 -- Volts IC = 1000A, VGE = 15V, Tj = 150C*5 -- 1.95 -- Volts IC = 1000A, VGE = 15V, Tj = Collector-Emitter Saturation Voltage VCE(sat) (Chip) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage IC = 1000A, VGE = 15V, Tj = -- -- 100 nF VCE = 10V, VGE = 0V -- -- 20 nF -- -- 1.7 nF VCC = 600V, IC = 1000A, VGE = 15V -- 2300 -- nC td(on) -- -- 800 ns tr VCC = 600V, IC = 1000A, VGE = 15V, -- -- 200 ns td(off) RG = 0, Inductive Load -- -- 600 ns -- -- 300 ns 25C*5 -- 1.85 2.30 Volts IE = 1000A, VGE = 0V, Tj = 125C*5 -- 1.85 -- Volts tf *1 VEC (Terminal) IE = 1000A, VGE = 0V, Tj = IE = 1000A, VGE = 0V, Tj = 150C*5 Emitter-Collector Voltage -- 1.85 -- Volts VEC*1 IE = 1000A, VGE = 0V, Tj = 25C*5 -- 1.70 2.15 Volts (Chip) 125C*5 -- 1.70 -- Volts -- 1.70 -- Volts IE = 1000A, VGE = 0V, Tj = IE = 1000A, VGE = 0V, Tj = 150C*5 Reverse Recovery Time trr VCC = 1000V, IE = 600A, VGE = 15V -- -- 300 ns Reverse Recovery Charge Qrr*1 RG = 0, Inductive Load -- 53.3 -- C Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 1000A, -- 89 -- mJ Turn-off Switching Energy per Pulse Eoff VGE = 15V, RG = 0, -- 137 -- mJ Reverse Recovery Energy per Pulse *1 Tj = 150C, Inductive Load -- 73 -- mJ Main Terminals-Chip, -- -- 0.5 m -- 2.0 -- Internal Lead Resistance *1 Err RCC' + EE' Per Switch,TC = 25C*2 Internal Gate Resistance rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Per Switch 83.8 98.6 81.8 57.6 42.2 27.2 0 0 0 20.9 Th 32.6 Tr1 46.0 Di1 72.6 73.6 86.0 87.0 LABEL SIDE Tr1 Di1 Tr1 Tr1 Tr1 26.4 Di1 Di1 Di1 40.0 Tr2 Tr2 Tr2 Tr2 Tr2 72.2 Di2 Di2 Di2 Di2 Di2 85.8 94.0 79.2 53.2 38.0 23.0 73.2 86.8 0 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 06/11 Rev. 3 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DXL-24S Dual IGBTMODTM NX-S Series Module 1000 Amperes/1200 Volts Electrical Characteristics, Tj = 25C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance R/R B Constant B(25/50) Test Conditions TC = 25C*2 Min. Typ. Max. Units 4.85 5.00 5.15 k -7.3 -- +7.8 % TC = 100C, R100 = 493 -- 3375 -- K P25 TC = 25C*2 -- -- 10 mW Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Inverter IGBT -- -- 0.020 K/W Case*2 Rth(j-c)D Per Inverter FWDi -- -- 0.038 K/W -- 0.007 -- K/W Power Dissipation Approximate by Equation*6 Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Rth(c-f) Thermal Grease Applied Heatsink*2 (Per 1 Module)*7 Mechanical Characteristics Mounting Torque Creepage Distance Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Terminal to Terminal -- -- -- mm Terminal to Baseplate -- -- -- mm ds Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal -- -- -- mm Terminal to Baseplate -- -- -- mm -- 690 -- Grams On Centerline X, Y*8 0 -- 100 m Recommended Operating Conditons, Ta = 25C (DC) Supply Voltage Gate (-Emitter Drive) Voltage VCC Applied Across C1-E2 -- 600 850 Volts VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts RG Per Switch 0 -- 5.1 External Gate Resistance + : CONVEX - : CONCAVE *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( - ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of = 0.9 [W/(m * K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. Y X MOUNTING SIDE 83.8 98.6 81.8 57.6 42.2 27.2 0 0 0 20.9 Th 32.6 Tr1 46.0 Di1 72.6 73.6 86.0 87.0 LABEL SIDE Tr1 Di1 Tr1 Tr1 Tr1 26.4 Di1 Di1 Di1 40.0 Tr2 Tr2 Tr2 Tr2 Tr2 72.2 Di2 Di2 Di2 Di2 Di2 85.8 94.0 79.2 53.2 38.0 23.0 73.2 86.8 0 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. MOUNTING SIDE LABEL SIDE - : CONCAVE + : CONVEX 4 06/11 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DXL-24S Dual IGBTMODTM NX-S Series Module 1000 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 15 13 12 1200 11 800 10 400 9 0 2 4 6 8 1.0 0.5 400 0 800 1200 1600 IC = 1000A 4 IC = 400A 2 0 2000 6 8 10 12 14 16 18 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 15V Tj = 25C Tj = 125C Tj = 150C 0 0.5 1.0 1.5 2.0 2.5 td(off) 101 Coes Cres 100 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tf tr 102 VCC = 600V VGE = 15V IC = 1000A Tj = 150C Inductive Load 100 GATE RESISTANCE, RG, () 06/11 Rev. 3 101 VCC = 600V VGE = 15V RG = 0.8 Tj = 150C Inductive Load Irr trr 103 EMITTER CURRENT, IE, (AMPERES) 104 VCC = 600V VGE = 15V RG = 0.8 Tj = 150C Inductive Load 101 102 103 104 COLLECTOR CURRENT, IC, (AMPERES) GATE CHARGE VS. VGE 20 102 101 102 tr 102 103 td(on) 101 10-1 td(on) tf Cies 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(off) 20 103 VGE = 0V 10-1 10-1 3.0 REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) 1.5 IC = 2000A 6 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 SWITCHING TIME, (ns) 2.0 8 COLLECTOR-CURRENT, IC, (AMPERES) 102 101 2.5 Tj = 25C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 103 3.0 0 10 10 VGE = 15V Tj = 25C Tj = 125C Tj = 150C SWITCHING TIME, (ns) 0 3.5 Tj = 25C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1600 VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2000 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) IC = 1000A VCC = 600V 16 12 8 4 0 0 500 1000 1500 2000 2500 3000 3500 GATE CHARGE, QG, (nC) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DXL-24S Dual IGBTMODTM NX-S Series Module 1000 Amperes/1200 Volts 101 102 103 104 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) VCC = 600V VGE = 15V RG = 0.8 Tj = 150C Ls = 50nH Inductive Load Eon Eoff 102 Eon Eoff 101 10-1 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 600V VGE = 15V IC = 1000A Tj = 150C Ls = 50nH Inductive Load 100 10-1 Err 10-2 101 10-1 100 GATE RESISTANCE, RG, () 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 100 101 101 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 VCC = 600V VGE = 15V RG = 0.8 Tj = 150C Ls = 50nH Inductive Load 102 Err 101 102 103 104 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, () COLLECTOR CURRENT, IC, (AMPERES) 103 103 VCC = 600V VGE = 15V IC = 1000A Tj = 150C Ls = 50nH Inductive Load REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 103 103 102 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 101 10-1 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.020C/W (IGBT) Rth(j-c) = 0.038C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 06/11 Rev. 3