Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com Dual IGBTMOD™
NX-S Series Module
1000 Amperes/1200 Volts
CM1000DXL-24S
106/11 Rev. 3
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM1000DXL-24S is a 1200V
(VCES), 1000 Ampere Dual
IGBTMOD™ Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 1000 24
Outline Drawing and Circuit Diagram
Di1 Di2
Tr 1Tr2
Es1
(62)
G1
(61)
TH2
(57)
TH1
(56)
Th
Cs1
(52)
Es2
(47)
G2
(46)
Cs2
(42)
C1(1)
C1(2)
E2(3)
E2(4)
E1C2 (32)
E1C2 (33)
NTC
DETAIL "B"
A
BC
DE
F
G
JK
L
L
K
Y
AAFED
Z
Z
AC R
AB
AD
HAC AF AG
U
T
P
QR
NC
S
M
AH
AJ
AN
AS
AR
AQ
AP
AM
AL
AK
DETAIL "B"
DETAIL "A"
W(6 PLACES)
X(4 PLACES)
DETAIL "A"
1
2
3
4
56789101112131415161718192021222324252627
63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41
28
29
30
31
32
33
37
38
39
34
35
36
40
AT
AE
V
AU AU AV AU
AM AM
AM
H
The tolerance of size between
terminals is assumed to ±0.4
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
Tolerance Otherwise Specified (mm)
Dimensions Inches Millimeters
A 5.98 152.0
B 5.39 137.0
C 4.79 121.7
D 4.61 117.2
E 4.33±0.02 110.0±0.5
F 3.72 94.5
G 0.6 15.14
H 0.26 6.5
J 0.53 13.5
K 0.14 3.6
L 0.3 7.75
M 0.016 4.05
N 1.53 39.0
P 0.86 22.0
Q 1.95 49.72
R 1.62 41.22
S 0.83 21.14
T 0.23 6.0
U 0.47 12.0
V 0.41 10.53
W M6 Metric M6
X 0.22 5.5 Dia.
Dimensions Inches Millimeters
Y 0.75 19.24
Z 0.86 22.0
AA 1.08 27.53
AB 0.14 3.5
AC 0.51 13.0
AD 0.19 3.0
AE 0.42 10.74
AF 0.67+0.04/-0.02 17.0+1.0/-0.5
AG 0.81 20.5
AH 0.29 7.4
AJ 0.05 1.2
AK 0.02 0.65
AL 0.04 1.15
AM 0.15 3.81
AN 0.5 12.5
AP 0.12 3.0
AQ 0.088 Dia. 2.25 Dia.
AR 0.102 Dia. 2.6 Dia.
AS 0.16 Dia. 4.3 Dia.
AT 0.67 16.9
AU 0.6 15.24
AV 0.75 19.05
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
206/11 Rev. 3
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 124°C)*2,*11 IC 900 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 2000 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 7500 Watts
Emitter Current (TC = 25°C)*2,*4,*11 IE*1 900 Amperes
Emitter Current (Pulse, Repetitive)*3 IERM*1 2000 Amperes
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature Tj(max) 175 °C
Maximum Case Temperature*2 TC(max) 125 °C
Operating Junction Temperature Tj(op) -40 to +150 °C
Storage Temperature Tstg -40 to +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*11 This module has 1000A size IGBT and FWDi chips. This limitation is based on the terminal design.
0
20.9
32.6
46.0
72.6
73.6
86.0
87.0
0
26.4
40.0
72.2
73.2
86.8
85.8
0
27.257.6 42.281.8
83.8
98.6
94.0 53.2 38.079.2 23.0 0
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Di2
Th
Tr 2
Di2
Tr 2
Di1
Tr 1
Di1
Tr 1
Di1
Tr 1
Di2
Tr 2
Di1
Tr 1
Di1
Tr 1
Di2
Tr 2
Di2
Tr 2
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
306/11 Rev. 3
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.4 6 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*5 — 1.85 2.30 Volts
(Terminal) IC = 1000A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts
IC = 1000A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IC = 1000A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 1000A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance Cies — — 100 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 20 nF
Reverse Transfer Capacitance Cres — — 1.7 nF
Gate Charge QG VCC = 600V, IC = 1000A, VGE = 15V — 2300 — nC
Turn-on Delay Time td(on) — — 800 ns
Rise Time tr VCC = 600V, IC = 1000A, VGE = ±15V, — — 200 ns
Turn-off Delay Time td(off) RG = 0Ω, Inductive Load — — 600 ns
Fall Time tf — — 300 ns
Emitter-Collector Voltage VEC*1 IE = 1000A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts
(Terminal) IE = 1000A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts
IE = 1000A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts
Emitter-Collector Voltage VEC*1 IE = 1000A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IE = 1000A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 1000A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time trr*1 VCC = 1000V, IE = 600A, VGE = ±15V — — 300 ns
Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 53.3 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 1000A, — 89 — mJ
Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — 137 — mJ
Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 73 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 0.5 mΩ
Per Switch,TC = 25°C*2
Internal Gate Resistance rg Per Switch — 2.0 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
0
20.9
32.6
46.0
72.6
73.6
86.0
87.0
0
26.4
40.0
72.2
73.2
86.8
85.8
0
27.257.6 42.281.8
83.8
98.6
94.0 53.2 38.079.2 23.0 0
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Di2
Th
Tr 2
Di2
Tr 2
Di1
Tr 1
Di1
Tr 1
Di1
Tr 1
Di2
Tr 2
Di1
Tr 1
Di1
Tr 1
Di2
Tr 2
Di2
Tr 2
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
406/11 Rev. 3
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω -7.3 — +7.8 %
B Constant B(25/50) Approximate by Equation*6 — 3375 — K
Power Dissipation P25 TC = 25°C*2 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Inverter IGBT — — 0.020 K/W
Thermal Resistance, Junction to Case*2 Rth(j-c)D Per Inverter FWDi — — 0.038 K/W
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 0.007 — K/W
Case to Heatsink*2 (Per 1 Module)*7
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb
Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal — — — mm
Terminal to Baseplate — — — mm
Clearance da Terminal to Terminal — — — mm
Terminal to Baseplate — — — mm
Weight m — 690 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts
Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts
External Gate Resistance RG Per Switch 0 — 5.1 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 B(25/50) = In( R25)/( 1 – 1 )
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
MOUNTING SIDE
LABEL SIDE
MOUNTING SIDE
0
20.9
32.6
46.0
72.6
73.6
86.0
87.0
0
26.4
40.0
72.2
73.2
86.8
85.8
0
27.257.6 42.281.8
83.8
98.6
94.0 53.2 38.079.2 23.0 0
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Di2
Th
Tr 2
Di2
Tr 2
Di1
Tr 1
Di1
Tr 1
Di1
Tr 1
Di2
Tr 2
Di1
Tr 1
Di1
Tr 1
Di2
Tr 2
Di2
Tr 2
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
506/11 Rev. 3
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
103
102
101
10-1
100
101
0 0.5 1.0 1.5 2.0 2.5 3.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
104
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
VGE = 0V
Cies
Coes
Cres
IC = 2000A
IC = 1000A
IC = 400A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13
9
Tj = 25°C
2000
400
800
1200
1600
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.5
3.0
0
2.0
2.5
1.0
1.5
0.5
0200016001200800400
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
102103
102
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0.8Ω
Tj = 150°C
Inductive Load
tf
104
GATE RESISTANCE, RG, (Ω)
103
10-1 100
102
101
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 1000A
Tj = 150°C
Inductive Load
tf
101
15
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
500 1000 1500 2000 2500 35003000
IC = 1000A
VCC = 600V
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102103
102
101
104
VCC = 600V
VGE = ±15V
RG = 0.8Ω
Tj = 150°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
606/11 Rev. 3
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.020°C/W
(IGBT)
Rth(j-c) =
0.038°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
103
10-1 100
102
101
VCC = 600V
VGE = ±15V
IC = 1000A
Tj = 150°C
Ls = 50nH
Inductive Load
101
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
Eon
Eoff
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
103
10-1 100
102
101
101
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
103
102103
102
101
104
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
Err
Err
VCC = 600V
VGE = ±15V
RG = 0.8Ω
Tj = 150°C
Ls = 50nH
Inductive Load
VCC = 600V
VGE = ±15V
RG = 0.8Ω
Tj = 150°C
Ls = 50nH
Inductive Load
Eon
Eoff
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
103
102103
102
101
104
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 600V
VGE = ±15V
IC = 1000A
Tj = 150°C
Ls = 50nH
Inductive Load