1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 300 W Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) 150 V Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +250 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T jc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pout=180W, Freq=1200, 1300, 1400 MHz Pout=180W, Freq=1200, 1300, 1400 MHz Pout=180W, Freq=1200, 1300, 1400 MHz Pout=180W, Freq=1200, 1300, 1400 MHz Pout=180W, Freq=1400 MHz Pulse Width=3mS, Duty=30% Min 180 16.6 54 Typ Max 17 60 1.0 3:1 0.73 Units W dB % dB C/W Bias Condition: Vdd=+50V, Idq=60mA average current (Vgs= -2.0 ~ -4.5V ) with constant gate Bias FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 50V VgS = -8V, VD = 0V Vgs =-8V, ID = 28mA 12 8 150 DC parameters pass/failure criteria will be revised after mass production DC parameters distributions have been determined. Issue June 2013 Export Classification: EAR 99 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information mA mA V 1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz Typical Performance Data Freq(GH) Pin (W) Pout (W) Id (A) RL (dB) Eff(%) G (dB) Droop (dB) 1.2 4 204 2.03 -13.8 61% 17.1 0.5 1.3 4 202 2.07 -11.4 60% 17.06 0.45 1.4 4 203 2.03 -13.6 61% 17.09 0.45 1214GN180LV 3ms@30% 50V 250.0 26 24 200.0 20 100.0 Gain (dB) Pout (W) 22 150.0 18 50.0 16 0.0 1.6 2.0 2.5 1.2G 3.2 1.3G 4.0 4.5 14 Pin (W) 1.4G 1214GN180LV 3ms@30% 50V 250.0 100.0% 90.0% 200.0 70.0% 100.0 Efficiency Pout (W) 80.0% 150.0 60.0% 50.0 50.0% 0.0 40.0% 1.6 2.0 1.2G 2.5 3.2 1.3G 4.0 4.5 Pin (W) 1.4G For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz Transistor Impedance Information Note: Z in is looking into the input circuit; Z Load is looking into the output circuit. Impedance Data Freq (GHz) Zs Zl 1.2 2.615 - j2.33 2.904 + j1.436 1.3 2.642 - j1.173 3.36 + j1.22 1.4 2.8 + j0.025 3.09 + j0.781 Please call the representative for detailed circuit configuration. For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz 55-KR PACKAGE DIMENSION Dimension A B C D E F G H I J K L M N Min (mil) 370 498 700 830 1030 101 151 385 130 003 135 105 085 065 Min (mm) 9.40 12.65 17.78 21.08 26.16 2.56 3.84 9.78 3.30 .076 3.43 2.67 2.16 1.65 Max (mil) 372 500 702 832 1032 102 152 387 132 004 137 107 86 66 Max (mm) 9.44 12.7 17.83 21.13 26.21 2.59 3.86 9.83 3.35 0.10 3.48 2.72 2.18 1.68 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Level / Date 0.1 / 12 June 2013 Para. Affected - Description Initial Preliminary Release For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information