G E SOLID STATE 3875081 G E SOLID STATE Silicon Controlled Rectifiers 2N63942N6398 12-A Silicon Controlled Rectifiers For Power Switching, Power Control, and Ignition Applications Features: High dv/at capability = Low thermal resistance = Low on-state voliage at high current levels The RCA-2N6394 to 2N6398, inclusive, are all-diffused sil- icon controlled rectifiers (reverse-biocking triode thyris- tors) designed for switching ac and de currents. OL DE sa7soa2 cores 8 DiE 17694 OD 7=-25-/% File Number 891 TERMINAL DESIGNATIONS Gare RECN) === eon TOP VIEW CATHODE 92cS-39968 JEDEC TO-220AB The TO-220AB package provides easy package mounting and tow thermal resistance allowing operation at high case temperatures and permitting reduced heat-sink size. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6394 2N6395 2N6396 2N6397 2N6398 *Vasomt ccccecesceresccensncenaeveneseeenseeeeeees 75 125 250 450 650 Vv VosoMt + escceccescnserneees 75 125 250 450 650 Vv *VAROMT seer ceueee ree senerees 50 100 200 400 600 v *Vonomt occeceeteeerecenceres 50 100 200 400 600 Vv lnams: (Te = 90C, @ = 180) 12 A Irs: For one full cycle of applied . principal voltage 60-Hzt 125 A t 50-H2t 105 A i : For more than one full cycle of applied t principal voltage...-...:eeesseereeerreneeseees S08 Fig. 4 --_________ 1 di/dt: | Vo = Vorom, lar = 80 MA, t= 0.1 ws (See Fig. 13).... 100 A/ps lt: | Ty = -40 to 125C, t= 110 8.3 MS... .. eee eee ee eee 65 A2s Pom: | Peak forward for 10us max. 16# Ww | Peak roverse . 00... cee eer cn cence eet eneeeernceee Se FQ. F ___ *Pouvl: i Averaging time = 8 ms MAXIMUM ......-- eee e eee eee 0.6 WwW . loa: {(fOrWArd) ....ccceeeeeee ee ee eee ereene eer enees 2 A *Tatg ccc ccec cen ect encase eset see eeee renee sence ee ees +40 too 150 C PT voce cece ener en cece nen eeenseeeene reer n saree esses 40 t0. 1285 C Trisseeeee dec ce rt eeecsenewaeraaeecorarersceen scree During soldering for 10 s maximum 250 C (terminal and case) * In accordance with JEDEC registration data format (JS-22, RDF- + These values do not apply If there isa positive gate signal. Gate At trams: = 12 A and Tc = 90C. @ JEDEC registration value is 100 A at Te = 90C. permitted. # JEDEC registered value is 10 W. ee ANE 700 4) filed for the JEDEC (2N series) types. must be open or negatively biased. Any product of gate current and gate voltage which results In a gate power less than the maximum Is 1237 D-14- meinerG E SOLID STATE O1 reff 3875081 0017695 O i mo O1 17695 0D TPSys 3875081 G SOLID STATE Silicon Controlled Rectifiers 2N63942N6398 ELECTRICAL CHARACTERISTICS . At Maximum Ratings Otherwise Specified and at Indicated Case Temperature (To) * In accordance with JEDEC registration data format (JS-22, RDF-1) fited for the JEDEC (2N series) types. , LIMITS CHARACTERISTIC FOR ALL TYPES UNITS MIN. | TYP. | MAX. ipom oF tRom: Vp = VporRom VR= VRROM: Tot 125C...... cool 0.1 2* mA VT: . . it = 24 A (peak), Ta = 25C (See Fig. 5)... ..6. 2 eee - 1.7 2,2* Vv ino: (See Fig. 10) T= 28C... eee bee eeeeeeveeeneenees be neees - 10 | 35 TE = 40C cece cence eee e eee eee eat eens - - | 60* mA dv/dt: Vb = VpROM- exponential volfage rise, Tc = 125C (See Fig. 18). ccc ce cece eet cranes 50 _ - Vius let {See Fig. 8) = = = 250 _ Vp 12V (ded, Ry =80.9, Te=25C vee eevee 8 | 30) mA Vp= 12 V (dc), Ry = 50 2, Te = 40C ... 0. eee - - 60 Vet: :. (See Fig. 9) Vp = 12V (de), Ry = 50 2, Te = 25C... ee eee - 107 | 15 y Vp = 12V (de), Ry = 50.2, To = 409C. ee - | 2.5%. Verb: . : - Vo = Vprom c= 1259C Loe eee eee ee eee 0.2 _ - Vv tgt: Vp = VpDROM: it= 24 A (peak), lot = 200 mA, . . t, = 0.02 us, Tc = 25C (See Figs. 128 14).......... - - 2* us ta: Rectangular Pulse . . Vp = Vprom it = 124. pulse duration = 50 us, ; dv/dt = 50 V/ps, di/dt = 10 A/us, Ig7 = 80 mA i at turn-on, Vp = 20 V minimum, VgK = 0 V at | turn-off, Tc = 75C (See Fig. 16).........0665 wee = 35 75 ps i RASC cere e cece een erence eee e eee e ee en ere eene - - 2* oc | ROJA cece ences eteceeees eden eee n eee ener enes - - 50* i } 701 2eaermemet meee 1238 E-01 * anaesG E SOLID STATE ou pe jss7so82 core 2 3875081 GE SOLID STATE c = ~ Silicon Controlled Rectifiers DIE 17696 D T 2s IS 2N63942N6398 ON-STATE POWER DISSIPATION (P7)W s2cs-2678e 2 9208-26769 ON-STATE CURRENT (Trees): Frio): OR Fravi] A ON-STATE CURRENT (Zr(RWa] Zr(oo)OF Eryayi] A Fig. 1 ~ On-state power dissipation vs. Fig, 2 Maximum allowable case temperature vs. on-state current. on-state current. TOAD! RESISTIVE CASE TEMPERATURE (T}#0C RMS ON-STATE CURRENT [X7(RMS)] IZA I GATE CONTROL MAY BE LOST DURING ANO (MMECIATELY FOLLOWING SURGE- CURRENT WTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE KAS RETURNED wirgta STEADY- Sy ~ NIN STATE Faro, VALU ee pL Hy seek ners ' sunce canna ouarion FUR cvcuss ween ON-STATE CURRENT [Tyipusy Ty(nc): OF Tryavi]A TTAVE, RENT (ITSM)-A 5 Someta re wom i ON-STATE CUR ~ a f Pi Fig. 9 Maximum allowable ambient temperature Fig. 4 Allowable peak surge on-state current vs. vs. on-state current no heat sinking. surge duration. ieeevnecssmine rere L & g & z a 4 3 i. <4 wi 8 = - we & o 8 i ; 5 E : ~50 INSTANTANEOUS ON-STATE VOLTAGE (vT)-V ezcs-zerer CASE TEMPERATURE (Tol-C 926$-26793 Fig. instantaneous on-state current vs. instantaneous on-state voltage. Fig. 6 DC Gate trigger current vs. case temperature. 702 -1239 E-02G E SOLID STATE 3875081 GE SOLID STATE oie 17697 0 TZ4KQ-/S Silicon Controlled Rectifiers > L g w o = 3 > ws o Qo = - wi & o eo a CASE TEMPERATURE (Tc) C 9205-26794 Fig. 7 DC Gate trigger voltage vs. case temperature. CRITICAL RATE-OFRISE OF OFF-STATE VOLTAGE (dv/dt)} V/pa CASE TEMPERATURE (TQI"C gace_agr96 Fig. 9 Critical of rise of off-state voltage vs. case temperature. Fig. 11 Rate of change on-state current with time (defining di/dt). 2N63942N6398 . INSTANTANEOUS HOLDING CURRENT (ipo) mA CASE TEMPERATURE (Tc)*C 928-26795 Fig. 8 Instantaneous holding current vs, case temperature. a = e i Zz 3S Zz e => F a u _ 8 & Z o oS py < S loo 200 300 DC GATE TRIGGER CURRENT (Igp)A 92cs-26797 Fig. 10 Typical gate-controlled turn-on time vs. gate trigger current, tot = tg + te 20% POINT i ' Vo | { ! \ o- ~l---4-=~- T_T sox pont | I 90% "Tw | f | ot tA rep hte i v I GT | Vy 0% POINT 9208-I3366R2 o- - Fig. 12 ~ Relationship between off-stata voltage, on- state current, and gate-trigger voltage show- ing reference points for definition of turn-on time (tg). 703G E SOLID STATE 3875081 GE SOLID STATE Silicon Controlled Rectifiers O14 def) 3s75081 couse 5s oie 17698) Db T25719S 2N63942N6398 CRITICAL dv/dt NN 8 963-2 at 2063 + t2RC 92CS-IS36SR3, Fig. 13 Rate of rise of off-state voltage with time (defining critical dv/dt). Fe meee peter 704 V4 ayay Vins : j 0% > Aftin { 1 ee | y - kr 4 Kt | l IZ duet Ny 9288-3661 Fig. 14 Relationship between instantaneous on-state current and voltage, showing reference points for definition of circuit-commutated turn- off time (ta). 1241 E-04 enor .