GaAs IRED & PHOTO-THYRISTOR TLP 747G (TLP747G) OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. [Jen rs SWITCHING POWER SUPPLY. 64 dj The TOSHIBA TLP747G consists of a photo-thyristor optically 1 G coupled to a gallium arsenide infrared emitting diode in a six lead 712 20.25 7.6240.25 plastic DIP package. | | 2 . Peak Off-State Voltage : 400V(Min.) -f_opsBds Trigger LED Current : 15mA (Max.) z| L285~ 880 | = z On-State Current : 150mA (Max.) a UL Recognized : UL1577, File No. 67349 BSI Approved : BS415:1990, BS7002:1989(EN60950) | sppEc _ Certificate No. 7364, 7365 EIAJ _ SEMKO Approved : 54330784 TOSHIBA 11-7A6 Certificate No. 9203174 Weight : 0.42g Isolation Voltage : 4000Vrms (Min.) . Option (D4) type PIN CONFIGURATIONS (TOP VIEW) VDE Approved : DIN VDE0884 / 08.87, Certificate No. 74286 id L6 Maximum Operating Insulation Voltage : 630VpK wy h 5 Highest Permissible Over Voltage : 6000VpPK 3q h 4 (Note) When a VDE0884 approved type is needed, 1: ANODE please designate the Option (D4) 2 : CATHODE 7,62mm pich 10.16mm pich 3: NC standard type TLPX x XF type 4 : CATHODE 5 : ANODE e Creepage Distance : 7.0mm (Min.) 8.0mm (Min.) 6 : GATE Clearance : 7.0mm (Min.) 8.0mm (Min.) Insulation Thickness : 0.5mm (Min.) 0.5mm (Min.)TLP747G {TLP747G) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current Ip 60 mA Aci Forward Current Derating (Ta 39C) Alp/C -0.7 mA/C | Peak Forward Current (100,;s pulse, 100pps) Ipp 1 A Reverse Voltage VR 5 v Junction Temperature Tj 125 C Peak Forward Voltage (RGK =27kQ) VDRM 400 Vv Peak Reverse Voltage (RGK =27k(2) VRRM 400 Vv mc] On-StateCurrent I7(RMS) 150 mA Oa On-StateCurrent Derating (Ta 25C) Alp /C 2.0 mA /C FAIS Peak On-StateCurrent (100s pulse, 120pps) Ivp 3 A Peak One Cycle Surge Current ITSM 2 A Peak Reverse Gate Voltage VGM 5 Vv Power Dissipation Pp 150 mW Power Dissipation Derating (Ta-* 25C) 4Pp/C 2.0 mW /C Junction Temperature Tj 100 C Storage Temperature Range Tstg 55~125 C Operating Temperature Range Topr 40~100 C Lead Soldering Temperatur(10 sec.) Tsold 260 C Total Package Power Dissipation Py 250 mW Total Package Power Dissipation Derating (Ta = 25C) 4Pp /C -3.3 mW /C Isolation Voltage (AC, lmin., R.H.~- 60%) (NOTE) BVS 4000 Vrms Note : Device considered a two terminal device : 4, 5 and 6 shorted together. pins 1, 2 and 3 shorted together, and pins 544 TLP747G (TLP747G) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT ar Forward Voltage VE Ip=10mA 1.0 | 1.15 1.3 Vv | Reverse Current IR VR=5V _ 10 vA Capacitance Cr V=0, f=1MHz _ 30 pF VAK =400V Ta=25C| 10 |5000 | nA Off-State Current IDRM RGK = 27k Ta=1000| 1 100 uh mC VA =400V Ta=25C| 10 [5000 | nA BY Reverse Current IRRM RGK =27k01 Taz100rc| 100 wh HO On-State Voltage VIM Tp = 100mA 0.9 1.3 Vv Holding Current Iq RGK =27kQ _ 0.2 _ mA Off-State dv/dt dv /dt VAK =280V, RGK =27kQ 5 10 _ Vius V=0, f=1MHz Capacitance C; Anode to Gate 20 pF Gate to Cathode _ 350 = COUPLED CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Trigger LED Current Ipy VaAK=8V, RGK =27ka _ _ 15 mA Turn-on Time ton Newman 10 Ss Coupled dv/dt dv/dt Vg =500V, RgoK =27kQ 500 _ - Vi us Capacitance(Input to Output) Cs Vg=0, f=1MHz 0.8 pF Isolation Resistance Rg Vg=500V, R.H.= 60% 5x10! 1014 Q AC, 1 minute 4000 _ - . Vrms Isolation Voltage BVs AC, 1 second, in oil |10000} DC, 1 minute, in oil 10000; Vde RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage Vac = = 120 Vac Forward Current IF 20 _ 25 | mA Operating Temperature Topr 25 85 C Gate to Cathode Resistance Rok _ 27 33 ka Gate to Cathode Capacity CoK _ 0.01 0.1 uF 545 TLP747G (TLP747G) (mA) ALLOWABLE FORWARD CURRENT IF IPP (mA) ALLOWABLE PULSE FORWARD CURRENT (mV C) FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa 0 -20 2 S s wo a e 6 e 6 0 20 40 60 AMBIENT TEMPERATURE Ta Irp - Dr 80100 CC) 120 PULSE WIDTH 1008 Ta= 26C 10% 3 107 3 io 3 DUTY CYCLE RATIO AVF/ATa 0.9 0.5 1 3 FORWARD CURRENT IF & Ip DR 10 (mA} 30 60 IT(RMS) Ta i & Bs bE ae <G BE pad of wi = fo} -20 00 2 640St 80 6100120 AMBIENT TEMPERATURE Ta (C) lp - VP < E A b Zz [2] io} fe 5 oO gq in < 3 o S ae 0.6 08 1.0 1.2 14 1.6 18 FORWARD VOLTAGE Vp (V) Irp - VFP il < E oe & PULSE WIDTH s l0zs REPETITIVE FREQUENCY = 100Hz Ta=25C b6 1.0 14 1.8 2.2 2.6 PULSE FORWARD VOLTAGE Vep (V) PULSE FORWARD CURRENT STURN-ON TIME ton (ss) TRIGGER LED CURRENT ipy (mA) (mA) HOLDING CURRENT ty CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE dv/dt (Vigs) TLP747G ton IF dv/dt RGK Ta = 25C R= 1000 VAA=50V Ta 225C RGK =10kN VaK =200V 400V 10 20 30 40 FORWARD CURRENT Ip (mA) Ip Ta 1 3.) O8 16 30-50 100 CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE dv/dt (V/ ys) VaK =6V GATE-CATHODE RESISTANCE Rox (ka) ! RL=100N Rex = 10kN Ipr - Rak < Ta=25C VAK =6V | E Rp =1002 0 20 4 60 80 100 & AMBIENT TEMPERATURE Ta (C) g > o yy - Ta 8 07 a 0.5 3 RoK = 10k 3 Ee 0.3 ano 1 3.85 10 30 560) |= 1QU 200 GATE-CATHODE RESISTANCE Rox (ko) 0.1 20 40 60 80 100 In - Rak AMBIENT TEMPERATURE Ta (C) t z Ta=25C dv/dt Cgk 00 Z 300 6 2 100 z a $ 50 g 30 10 ovat 0.003 0.005 0.01 4 3. 6 10 30 60 6100200 GATE-CATHODE CAPACITANCE Cox (xP) GATE-CATHODE RESISTANCE Rox (kf) 547