IDH05S120
thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Optimized for high temperature operation
thinQ!TM Diode designed for fast switching applications like:
• Lowest Figure of Merit QC/IF
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
Type Package Marking Pin 1 Pin 2
IDH05S120 PG-TO220-2 D05S120 C A
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
PG-TO220-2
VDC 600 V
QC3.2 nC
IF;TC< 130 °C 3 A
Product Summary
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
PG-TO220-2
VDC 600 V
QC3.2 nC
IF;TC< 130 °C 3 A
Product Summary
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
PG-TO220-2
Rev. 2.0 page 1 2010-04-20
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current IFTC<130 °C 5A
IF,SM TC=25 °C, tp=10 ms 29
TC=150 °C, tp=10 ms 25
Non-repetitive peak forward current IF,max TC=25 °C, tp=10 µs 110
∫i2dtTC=25 °C, tp=10 ms 4A2s
TC=150 °C, tp=10 ms 3
Repetitive peak reverse voltage VRRM Tj=25 °C 1200 V
Diode dv/dt ruggedness dv/dtVR= 0….960 V 50 V/ns
Power dissipation Ptot TC=25 °C 75 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
Soldering temperature,
wavesoldering only allowed at leads Tsold
1.6mm (0.063 in.)
from case for 10s 260
Mounting torque M3 and M3.5 screws 60 Mcm
i²t value
Value
Surge non-repetitive forward current,
sine halfwave
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
Type Package Marking Pin 1 Pin 2
IDH05S120 PG-TO220-2 D05S120 C A
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
PG-TO220-2
VDC 600 V
QC3.2 nC
IF;TC< 130 °C 3 A
Product Summary
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
PG-TO220-2
VDC 600 V
QC3.2 nC
IF;TC< 130 °C 3 A
Product Summary
VDC 1200 V
QC18 nC
IF;TC< 130 °C 5 A
Product Summary
PG-TO220-2
Rev. 2.0 page 1 2010-04-20
IDH05S120
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 2 K/W
Thermal resistance,
junction - ambient
Thermal resistance,
junction- ambient,
leaded
--62
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage VDC IR=0.05 mA, Tj=25 °C 1200 - - V
Diode forward voltage VFIF=5 A, Tj=25 °C - 1,65 1,8
IF=5 A, Tj=150 °C - 2,55 -
Reverse current IRVR=1200 V, Tj=25 °C - 5 120 µA
VR=1200 V, Tj=150 °C - 20 1000
Values
RthJA
Rev. 2.0 page 2 2010-04-20
AC characteristics
Total capacitive charge Qc-18-nC
Switching time2) tc- - <10 ns
Total capacitance CVR=1 V, f=1 MHz - 250 - pF
VR=300 V, f=1 MHz -20-
VR=600 V, f=1 MHz -18-
1) J-STD20 and JESD22
VR=400 V,IF≤IF,max,
diF/dt=200 A/µs,
Tj=150 °C
2) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection
4) Only capacitive charge occuring, guaranteed by design
3) Under worst case Zth conditions.
Rev. 2.0 page 2 2010-04-20
IDH05S120
1 Power dissipation 2 Diode forward current
Ptot=f(TC)IF=f(TC)3); Tj≤175 °C; parameter: D = tp/T
0
10
20
30
40
50
60
70
80
25 75 125 175
Ptot [W]
TC[°C]
1
0.7
0.5
0.3
0.1
0
10
20
30
40
50
25 75 125 175
IF[A]
TC[°C]
Rev. 2.0 page 3 2010-04-20
3 Typ. forward characteristic 4 Typ. Reverse current vs. reverse voltage
IF=f(VF); tp=400 µs EC=f(VR)
parameter: Tj
0
10
20
30
40
50
60
70
80
25 75 125 175
Ptot [W]
TC[°C]
-55 °C
25 °C
100 °C
150 °C
175 °C
0
2
4
6
8
10
0246
IF[A]
VSD [V]
1
0.7
0.5
0.3
0.1
0
10
20
30
40
50
25 75 125 175
IF[A]
TC[°C]
-55 °C
25 °C
100 °C
150 °C
175 °C
10-3
10-2
10-1
100
101
102
200 400 600 800 1000 1200
IR[µA]
VR[V]
Rev. 2.0 page 3 2010-04-20
IDH05S120
5 Typ. capacitance charge vs. current slope 6 Transient thermal impedance
QC=f(diF/dt)4); Tj=150 °C; IF≤IF,max ZthJC=f(tp)
parameter: D=tp/T
0
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
ZthJC [K/W]
t[s]
0
5
10
15
20
100 400 700 1000
QC[nC]
diF/dt [A/ µs]
Rev. 2.0 page 4 2010-04-20
7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy
C=f(VR); TC=25 °C, f=1 MHz EC=f(VR)
0
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
ZthJC [K/W]
t[s]
0
5
10
15
20
100 400 700 1000
QC[nC]
diF/dt [A/ µs]
0
50
100
150
200
250
1 10 100 1000
C[pF]
VR[V]
0
1
2
3
4
0 200 400 600
Ec[µC]
VR[V]
Rev. 2.0 page 4 2010-04-20
IDH05S120
PG-TO220-2: Outline
thinQ!TM 2G Diode designed for fast switching applications like:
Rev. 2.0 page 5 2010-04-20
Dimensions in mm/inches
Rev. 2.0 page 5 2010-04-20
IDH05S120
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
thinQ!TM 2G Diode designed for fast switching applications like:
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
Rev. 2.0 page 6 2010-04-20
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0 page 6 2010-04-20
