QEE113 — Plastic Infrared Light Emitting Diode
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1
August 2008
PACKAGE DIMENSIONS
QEE113
Plastic Infrared Light Emitting Diode
Features
■
λ
= 940nm
■
Package Type = Sidelooker
■
Chip Material = GaAs
■
Matched Photosensor: QSE113
■
Medium Wide Emission Angle, 50°
■
Package Material: Clear Epoxy
■
High Output Power
■
Gray stripe on the top side
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
Package Dimensions
ANODE
CATHODE
0.175 (4.44)
0.200 (5.08)
0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
Ø0.065 (1.65)
Ø0.095 (2.41)
CATHODE
ANODE
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
Schematic
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1 2
QEE113 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
(T
A
= 25°C)
Symbol Parameter Rating Units
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
I
F
Continuous Forward Current 50 mA
V
R
Re verse Voltage 5 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PE
Peak Emission Wavelength I
F
= 20mA 945 nm
TC
λ
Temperature Coefficient 0.3 nm
/
°C
2
Θ
1
/2 Emission Angle I
F
= 100mA 50 °
V
F
Forward Voltage I
F
= 100mA, tp = 20ms 1.5 V
TC
VF
Temperature Coefficient -2 mV
/
°C
I
R
Reverse Current V
R
= 5V 10 µA
I
E
Radiant Intensity I
F
= 100mA, tp = 20ms 3 7.5 12 mW/sr
TC
IE
Temperature Coefficient -0.7 %
/
°C
t
r
Rise Time I
F
= 100mA 800 ns
t
f
Fall Time 800 ns
C
j
Junction Capacitance V
R
= 0V 14 pF
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1 3
QEE113 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Fig. 3 Normalized Radiant Intensity vs. Forward Current
IF – FORWARD CURRENT (mA)
Ie – NORMALIZED RADIANT INTENSITY
10010 1000
10
1
0.1
Normalized to:
IF = 100mA Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
TA – AMBIENT TEMPERTURE (°C)
Fig. 6 Forward Voltage vs. Ambient Temperature
Fig. 1 Normalized Intensity vs. Wavelength
VF – FORWARD VOLTAGE (V)
010203040506070
1.55
1.50
1.45
1.40
1.35
1.30
1.25
VF – FORWARD VOLTAGE (V)
3.5
3.0
2.5
2.0
1.5
1.0
λ (nm)
NORMALIZED INTENSITY
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80 90
700 750 800 850 900 950 1,000 1,050
100
IF = 20mA Pulsed
tPW = 20ms
Duty Cycle = 4%
Fig. 5 Forward Voltage vs. Forward Current
IF – FORWARD CURRENT (mA)
10010 1000
IF Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TA – AMBIENT TEMPERTURE (°C)
Fig. 2 Peak Wavelength vs. Ambient Temperature
λPE – PEAK EMISSION WAVELENGTH
010203040506070
975
970
965
960
955
950
945
940
935 80 90 100
IF = 20mA DC
TA – AMBIENT TEMPERTURE (°C)
Fig. 4 Normalized Radient Intensity vs. Ambient Temperature
Ie – NORMALIZED RADIANT INTENSITY
01020304050607080 90 100
Normalized to:
IF = 20mA Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1 4
QEE113 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
(Continued)
LENS TIP SEPARATION (inches)
IC (ON) – NORMALIZED COLLECTOR CURRENT
0123456
1.0
0.8
0.6
0.4
0.2
0.0
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
150°
160°
170°
180°
Fig. 7 Radiation Diagram
0.00.20.40.60.81.0 0.2 0.4 0.6 0.8 1.0
Fig. 8 Coupling Characteristics of QEE113 And QSE113
Normalized to:
d = 0 inch
IF Pulsed
tpw = 100µs
Duty Cycle = 0.1%
VCC = 5V
RL = 100Ω
TA = 25°C
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1 5
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Definition of Terms
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datasheet is for reference information only.
Rev. I36
QEE113 — Plastic Infrared Light Emitting Diode
