DSA120C150QB Schottky Diode Gen VRRM = 150 V I FAV = 2x 60 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA120C150QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline compatible with TO-247 RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA120C150QB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 150 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 150 V IR reverse current, drain current VR = 150 V TVJ = 25C 900 A VR = 150 V TVJ = 125C 5 mA TVJ = 25C 0.93 V 1.13 V 0.80 V VF IF = forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 125 C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 150C rectangular 1.03 V T VJ = 175 C 60 A TVJ = 175 C 0.51 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 3.9 m 0.4 K/W K/W 0.25 TC = 25C 24 V f = 1 MHz 481 Data according to IEC 60747and per semiconductor unless otherwise specified 375 W 1.20 kA pF 20131031b DSA120C150QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 1) Weight 5 MD mounting torque FC mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code g 0.8 1.2 Nm 20 120 N Part number D S A 120 C 150 QB IXYS Zyyww = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) abcd Date Code Ordering Standard Part Number DSA120C150QB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA120C150QB * on die level Delivery Mode Tube Code No. 501788 T VJ = 175 C Schottky V 0 max threshold voltage 0.51 V R 0 max slope resistance * 1.3 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA120C150QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA120C150QB Schottky 120 10000 100 100 10 80 150C IR 1 IF TVJ = 150C 125C 25C 60 [A] 40 TVJ=175C 125C CT 100C [pF] TVJ = 25C 1000 [mA] 0.1 75C 0.01 20 50C 25C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 100 50 VF [V] Fig. 1 Max. forward voltage drop characteristics 100 0 150 50 100 150 VR [V] VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 60 80 50 DC 60 d = 0.5 40 IF(AV) P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 30 [A] [W] 20 20 10 0 0 0 50 100 150 200 0 10 20 30 TC [C] 40 50 60 70 IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp TC 0.4 0.3 ZthJC 0.2 Rthi ti 0.022 0.0002 0.082 0.0032 0.104 0.026 0.165 0.208 0.027 0.79 [K/W] 0.1 0.0 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b