Data Sheet, Rev. 1.0, May 2008 TLE42754 L o w D r o p o u t Li n e a r F i x e d Vo l t a g e R e g u l a t o r Automotive Power Low Dropout Linear Fixed Voltage Regulator 1 TLE42754 Overview Features * * * * * * * * * * * * * * Output Voltage 5 V 2% Ouput Current up to 450 mA Very low Current Consumption Power-on and Undervoltage Reset with Programmable Delay Time Reset Low Down to VQ = 1 V Very Low Dropout Voltage Output Current Limitation Reverse Polarity Protection Overtemperature Protection Suitable for Use in Automotive Electronics Wide Temperature Range from -40 C up to 150 C Input Voltage Range from -42 V to 45 V Green Product (RoHS compliant) AEC Qualified PG-TO252-5 Description The TLE42754 is a monolithic integrated low-dropout voltage regulator in a 5-pin TO-package, especially designed for automotive applications. An input voltage up to 42 V is regulated to an output voltage of 5.0 V. The component is able to drive loads up to 450 mA. It is short-circuit proof by the implemented current limitation and has an integrated overtemperature shutdown. A reset signal is generated for an output voltage VQ,rt of typically 4.65 V. The power-on reset delay time can be programmed by the external delay capacitor. PG-TO263-5 Dimensioning Information on External Components An input capacitor CI is recommended for compensation of line influences. An output capacitor CQ is necessary for the stability of the control loop. Type Package Marking TLE42754D PG-TO252-5 TLE42754D TLE42754G PG-TO263-5 TLE42754G Data Sheet 2 Rev. 1.0, 2008-05-29 TLE42754 Overview Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The component also has a number of internal circuits for protection against: * * * Overload Overtemperature Reverse polarity Data Sheet 3 Rev. 1.0, 2008-05-29 TLE42754 Block Diagram 2 Block Diagram TLE42754 I Protection Circuits Reset Generator Bandgap Reference GND Figure 1 Data Sheet Q RO D Block Diagram 4 Rev. 1.0, 2008-05-29 TLE42754 Pin Configuration 3 Pin Configuration 3.1 Pin Assignment TLE42754D (PG-TO252-5) and TLE42754G (PG-TO263-5) P-TO252-5 (D-PAK) P-TO263-5 (D-PAK) GND 1 5 RO D Q AEP02580 GND Q D RO IEP02528 Figure 2 Pin Configuration (top view) 3.2 Pin Definitions and Functions TLE42754D (PG-TO252-5) and TLE42754G (PGTO263-5) Pin Symbol Function 1 I Input for compensating line influences, a capacitor to GND close to the IC terminals is recommended 2 RO Reset Output open collector output; external pull-up resistor to a positive potential required; leave open if the reset function is not needed 3 GND TLE42754G (PG-TO263-5) only: Ground internally connected to tab 4 D Reset Delay Timing connect a ceramic capacitor to GND for adjusting the reset delay time; leave open if the reset function is not needed 5 Q Output block to GND with a capacitor close to the IC terminals, respecting the values given for its capacitance CQ and ESR in the table "Functional Range" on Page 7 TAB GND Ground connect to heatsink area Data Sheet 5 Rev. 1.0, 2008-05-29 TLE42754 General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) -40 C Tj 150 C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Max. Unit Conditions Input 4.1.1 Voltage VI -42 45 V - Voltage VQ -0.3 7 V - VRO -0.3 25 V - VD -0.3 7 V - Tj Tstg -40 150 C - -50 150 C - VESD,HBM -2 2 kV Human Body Model (HBM)2) VESD,CDM -500 500 V Charge Device Model (CDM)3) -750 750 V Charge Device Model (CDM)3) at corner pins Output 4.1.2 Reset Output 4.1.3 Voltage Reset Delay 4.1.4 Voltage Temperature 4.1.5 Junction Temperature 4.1.6 Storage Temperature ESD Absorption 4.1.7 ESD Absorption 4.1.8 4.1.9 1) Not subject to production test, specified by design. 2) ESD HBM Test according JEDEC JESD22-A114 3) ESD CDM Test according AEC/ESDA ESD-STM5.3.1-1999 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 6 Rev. 1.0, 2008-05-29 TLE42754 General Product Characteristics 4.2 Pos. Functional Range Parameter 4.2.1 Input Voltage 4.2.2 Output Capacitor's Requirements for Stability 4.2.3 Junction Temperature Symbol VI CQ ESR(CQ) Tj Limit Values Unit Conditions Min. Max. 5.5 42 V - 22 - F -1) - 3 -2) -40 150 C - 1) the minimum output capacitance requirement is applicable for a worst case capacitance tolerance of 30% 2) relevant ESR value at f = 10 kHz Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. Data Sheet 7 Rev. 1.0, 2008-05-29 TLE42754 General Product Characteristics 4.3 Pos. Thermal Resistance Parameter Symbol Limit Value Min. Typ. Unit Conditions Max. TLE42754D (PG-TO252-5) 4.3.4 Junction to Case1) RthJC RthJA - 3.7 - K/W - - 27 - K/W 2) 4.3.6 - 110 - K/W footprint only3) 4.3.7 - 57 - K/W 300 mm2 heatsink area on PCB3) 4.3.8 - 42 - K/W 600 mm2 heatsink area on PCB3) - 3.7 - K/W - - 27 - K/W 2) 4.3.11 - 70 - K/W footprint only3) 4.3.12 - 42 - K/W 300 mm2 heatsink area on PCB3) 4.3.13 - 33 - K/W 600 mm2 heatsink area on PCB3) 4.3.5 Junction to Ambient 1) TLE42754G (PG-TO263-5) 4.3.9 4.3.10 Junction to Case1) 1) Junction to Ambient RthJC RthJA 1) not subject to production test, specified by design 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70m Cu, 2 x 35m Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. 3) Specified RthJA value is according to JEDEC JESD 51-3 at natural convection on FR4 1s0p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm3 board with 1 copper layer (1 x 70m Cu). Data Sheet 8 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics 5 Block Description and Electrical Characteristics 5.1 Voltage Regulator The output voltage VQ is controlled by comparing a portion of it to an internal reference and driving a PNP pass transistor accordingly. The control loop stability depends on the output capacitor CQ, the load current, the chip temperature and the poles/zeros introduced by the integrated circuit. To ensure stable operation, the output capacitor's capacitance and its equivalent series resistor ESR requirements given in the table "Functional Range" on Page 7 have to be maintained. For details see also the typical performance graph "Output Capacitor Series Resistor ESR(CQ) versus Output Current IQ" on Page 12. As the output capacitor also has to buffer load steps it should be sized according to the application's needs. An input capacitor CI is strongly recommended to compensate line influences. Connect the capacitors close to the component's terminals. A protection circuitry prevent the IC as well as the application from destruction in case of catastrophic events. These safeguards contain an output current limitation, a reverse polarity protection as well as a thermal shutdown in case of overtemperature. In order to avoid excessive power dissipation that could never be handled by the pass element and the package, the maximum output current is decreased at input voltages above VI = 28 V. The thermal shutdown circuit prevents the IC from immediate destruction under fault conditions (e.g. output continuously short-circuited) by switching off the power stage. After the chip has cooled down, the regulator restarts. This leads to an oscillatory behaviour of the output voltage until the fault is removed. However, junction temperatures above 150 C are outside the maximum ratings and therefore significantly reduce the IC's lifetime. The TLE42754 allows a negative supply voltage. In this fault condition, small currents are flowing into the IC, increasing its junction temperature. This has to be considered for the thermal design, respecting that the thermal protection circuit is not operating during reverse polarity conditions. Supply II I Q Regulated Output Voltage IQ Saturation Control Current Limitation C CI Temperature Shutdown BlockDiagram_VoltageRegulator.vsd Figure 3 Data Sheet Bandgap Reference ESR } CQ LOAD GND Voltage Regulator 9 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Electrical Characteristics Voltage Regulator VI = 13.5 V, -40 C Tj 150 C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. 5.1.1 Output Voltage VQ 4.9 5.0 5.1 V 1 mA < IQ < 450 mA 9 V < VI < 28 V 5.1.2 Output Voltage VQ 4.9 5.0 5.1 V 1 mA < IQ < 400 mA 6 V < VI < 28 V 5.1.3 Output Voltage VQ 4.9 5.0 5.1 V 1 mA < IQ < 200 mA 6 V < VI < 40 V 5.1.4 Output Current Limitation 5.1.5 Load Regulation steady-state IQ,max VQ,load 450 - 1100 mA -30 -15 - mV VQ = 4.8V IQ = 5 mA to 400 mA 5.1.6 Line Regulation steady-state VQ,line - 5 15 mV 5.1.7 Dropout Voltage1) Vdr - 250 500 mV Vdr = VI - VQ VI = 8 V VI = 8 V to 32 V IQ = 5 mA IQ = 300 mA 5.1.8 Power Supply Ripple Rejection2) PSRR - 60 - dB fripple = 100 Hz Vripple = 0.5 Vpp 5.1.9 Temperature Output Voltage Drift dVQ/dT - 0.5 - mV/K - 5.1.10 Overtemperature Shutdown Threshold Tj,sd 151 - 200 C Tj increasing2) 5.1.11 Overtemperature Shutdown Threshold Hysteresis Tj,sdh - 20 - C Tj decreasing2) 1) measured when the output voltage VQ has dropped 100mV from the nominal value obtained at VI = 13.5V 2) not subject to production test, specified by design Data Sheet 10 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Typical Performance Characteristics Voltage Regulator Output Voltage VQ versus Junction Temperature Tj Output Current IQ versus Input Voltage VI 01_VQ_T J.VSD 5,20 02_IQ_VI.VSD 1000 T j = -40 C 900 5,10 800 T j = 150 C 700 IQ,max [mA] 5,00 V Q [V] T j = 25 C 4,90 V I = 13.5 V I Q = 50 mA 4,80 600 500 400 300 200 4,70 100 4,60 0 -40 0 40 80 120 160 0 10 Power Supply Ripple Rejection PSRR versus ripple frequency fr) T j = 25 C T j = 150 C 7 V Q [mV] PSRR [dB] 6 60 50 40 20 10 0 0,01 I Q = 10 mA C Q = 22 F 5 T j = 25 C 4 3 T j = -40 C ceramic V I = 13.5 V V ripple = 0.5 Vpp 2 1 0 0,1 1 10 100 1000 0 f [kHz] Data Sheet T j = 150 C 8 70 30 50 04_DVQ_DVI.VSD 9 T j = -40 C 80 40 Line Regulation VQ,line versus Input Voltage Change VI) 03_PSRR_FR.VSD 90 30 V I [V] T j [C] 100 20 10 20 30 40 V I [V] 11 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Load Regulation VQ,load versus Output Current Change IQ Output Capacitor Series Resistor ESR(CQ) versus Output Current IQ 05_DVQ_DIQ.VSD 0 VI = 8 V -5 C Q = 22 F T j = -40..150 C 100 ESR(C Q) [ ] T j = -40 C V Q [mV] 06_ESR_IQ.VSD 1000 T j = 25 C -10 T j = 150 C -15 10 0,1 -25 0,01 100 200 300 400 Stable Region 0 500 I Q [mA] V I = 6..28 V 1 -20 0 Unstable Region 100 200 300 400 500 I Q [mA] Dropout Voltage Vdr versus Junction Temperature Tj 07_VDR_TJ.VSD 500 I Q = 400 mA 450 400 I Q = 300 mA V DR[mV] 350 300 250 200 I Q = 100 mA 150 100 I Q = 10 mA 50 0 -40 0 40 80 120 160 T j [C] Data Sheet 12 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics 5.2 Current Consumption Electrical Characteristics Current Consumption VI = 13.5 V, -40 C Tj 150 C, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. - 150 200 Unit Conditions 5.2.1 Current Consumption Iq = II - IQ Iq A 5.2.2 - 150 220 A 5.2.3 5.2.4 - - 5 15 10 25 mA mA IQ = 1 mA Tj = 25 C IQ = 1 mA Tj = 85 C IQ = 250 mA IQ = 400 mA Data Sheet 13 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Typical Performance Characteristics Current Copnsumption Current Consumption Iq versus Output Current IQ (IQ low) Current Consumption Iq versus Output Current IQ 08_IQ_IQ_IQLOW.VSD 7 09_IQ_IQ.VSD 30 V I = 13.5 V V I = 13.5 V T j = 150 C 6 T j = 150 C 25 5 4 3 I q [mA] I q [mA] 20 T j = 25 C 15 T j = 25 C 10 2 5 1 0 0 0 50 100 150 0 200 100 200 300 400 500 I Q [mA] I Q [mA] Current Consumption Iq versus Input Voltage VI 10_IQ_VI.VSD 60 50 I q [mA] 40 30 R LOAD = 12.5 20 10 R LOAD = 500 0 0 10 20 30 40 V I [V] Data Sheet 14 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics 5.3 Reset Function The reset function provides several features: Output Undervoltage Reset: An output undervoltage condition is indicated by setting the Reset Output RO to "low". This signal might be used to reset a microcontroller during low supply voltage. Power-On Reset Delay Time: The power-on reset delay time trd allows a microcontoller and oscillator to start up. This delay time is the time frame from exceeding the reset switching threshold VRT until the reset is released by switching the reset output "RO" from "low" to "high". The power-on reset delay time trd is defined by an external delay capacitor CD connected to pin D charged by the delay capacitor charge current ID,ch starting from VD = 0 V. If the application needs a power-on reset delay time trd different from the value given in Item 5.3.6, the delay capacitor's value can be derived from the specified values in Item 5.3.6 and the desired power-on delay time: t rd, new C D = ---------------- x 47nF t rd with * * * CD: capacitance of the delay capacitor to be chosen trd,new: desired power-on reset delay time trd: power-on reset delay time specified in this datasheet For a precise calculation also take the delay capacitor's tolerance into consideration. Reset Reaction Time: The reset reaction time avoids that short undervoltage spikes trigger an unwanted reset "low" signal. The reset reaction rime trr considers the internal reaction time trr,int and the discharge time trr,d defined by the external delay capacitor CD (see typical performance graph for details). Hence, the total reset reaction time becomes: t rr = t rd, int + t rr, d with * * * trr: reset reaction time trr,int: internal reset reaction time trr,d: reset discharge Reset Output Pull-Up Resistor RRO: The Reset Output RO is an open collector output requiring an external pull-up resistor to a voltage VIO, e.g. VQ. In Table "Electrical Characteristics Reset Function" on Page 18 a minimum value for the external resistor RRO is given for the case it is connected to VQ or to a voltage VIO < VQ. If the pull-up resistor shall be connected to a voltage VIO > VQ, use the following formula: 5k R RO = ----------- x V IO VQ Data Sheet 15 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Supply I Q Int. Supply Control VDD CQ RO ID,ch Reset I RO VDST VRT RRO MicroController IDR,dsch GND D BlockDiagram_Reset.vsd GND CD Figure 4 Data Sheet Block Diagram Reset Function 16 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics VI t t < trr,total VQ VRT 1V t t rd VD V DU V DRL t VRO V RO,low t rd trr,total trd t rr,total t rd t rr,total 1V t Thermal Shutdown Figure 5 Data Sheet Input Voltage Dip Undervoltage Spike at output Overload T i mi n g Di a g ra m_ Re se t. vs Timing Diagram Reset 17 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Electrical Characteristics Reset Function VI = 13.5 V, -40 C Tj 150 C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. VRT 4.5 4.65 4.8 V VQ decreasing Output Undervoltage Reset 5.3.1 Output Undervoltage Reset Switching Thresholds Reset Output RO 5.3.2 Reset Output Low Voltage VRO,low - 0.2 0.4 V 1 V VQ VRT ; IRO = 0.2 mA 5.3.3 Reset Output Sink Current Capability IRO,max 0.2 - - mA 1 V VQ VRT ; VRO = 5 V 5.3.4 Reset Output Leakage Current IRO,leak - 0 10 A VRO = 5 V 5.3.5 Reset Output External Pull-up Resistor to VQ RRO 5 - - k 1 V VQ VRT ; VRO 0.4 V trd VDU 10 16 22 ms CD = 47 nF - 1.8 - V - Reset Delay Timing 5.3.6 Power On Reset Delay Time 5.3.7 Upper Delay Switching Threshold 5.3.8 Lower Delay Switching Threshold VDRL - 0.65 - V - 5.3.9 Delay Capacitor Charge Current ID,ch - 5.5 - A VD = 1 V 5.3.10 Delay Capacitor Reset Discharge Current ID,dch - 100 - mA VD = 1 V 5.3.11 Delay Capacitor Discharge Time trr,d - 0.5 1 s Calculated Value: trr,d = CD*(VDU VDRL)/ ID,dch CD = 47 nF 5.3.12 Internal Reset Reaction Time - 4 7 s CD = 0 nF1) 5.3.13 Reset Reaction Time trr,int trr,total - 4.5 8 s Calculated Value: trr,total = trr,int + trr,d CD = 47 nF 1) parameter not subject to production test; specified by design Data Sheet 18 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Typical Performance Characteristics Power On Reset Delay Time trd versus Junction Temperature Tj Undervoltage Reset Switching Threshold VRT versus Tj 11_VRT_TJ.VSD 5 12_TRD_TJ.VSD 20 C D = 47 nF 18 4,9 16 14 4,8 t rd [ms] V RT [V] 12 4,7 10 8 4,6 6 4 4,5 2 4,4 0 -40 0 40 80 120 160 -40 0 Power On Reset DelayTime trd versus Capacitance CD 160 14_T RRINT_TJ.VSD 3,5 80 3 T j = -40 C T j = 25 C 2,5 T j = 150 C t rr,int [s] 60 t rd [ms] 120 Internal Reset Reaction Time trr,int versus Junction Temperature Tj 13_TRD_CD.VSD 70 80 T j [C] T j [C] 90 40 50 40 2 1,5 30 1 20 0,5 10 0 0 50 100 150 200 0 250 -40 C D [nF] Data Sheet 0 40 80 120 160 T j [C] 19 Rev. 1.0, 2008-05-29 TLE42754 Block Description and Electrical Characteristics Delay Capacitor Discharge Time trr,d versus Junction Temperature Tj 15_TRRD_TJ.VSD 0,6 C D = 47 nF 0,5 t rr,d [s] 0,4 0,3 0,2 0,1 0 -40 0 40 80 120 160 T j [C] Data Sheet 20 Rev. 1.0, 2008-05-29 TLE42754 Package Outlines 6 Package Outlines 6.5 +0.15 -0.05 A 1) 2.3 +0.05 -0.10 0.9 +0.20 -0.01 0...0.15 0.5 +0.08 -0.04 5 x 0.6 0.1 1.14 4.56 0.5 +0.08 -0.04 0.51 MIN. 0.15 MAX. per side B (5) 0.8 0.15 (4.24) 1 0.1 9.98 0.5 6.22 -0.2 5.7 MAX. 0.1 B 0.25 M A B 1) Includes mold flashes on each side. All metal surfaces tin plated, except area of cut. Figure 6 Data Sheet PG-TO252-5 21 Rev. 1.0, 2008-05-29 TLE42754 Package Outlines 4.4 10 0.2 1.27 0.1 A 8.5 1) B 0.05 2.4 0.1 2.7 0.3 4.7 0.5 7.55 1) 9.25 0.2 (15) 10.3 0...0.3 0...0.15 5 x 0.8 0.1 0.5 0.1 4 x 1.7 0.25 M A B 8 MAX. 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Figure 7 0.1 B GPT09113 PG-TO263-5 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Data Sheet 22 Dimensions in mm Rev. 1.0, 2008-05-29 TLE42754 Revision History 7 Revision History Version Date Changes 1.0 2008-05-29 final data sheet Data Sheet 23 Rev. 1.0, 2008-05-29 Edition 2008-05-29 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.