FDMC5614P P-Channel PowerTrench(R) MOSFET -60V, -13.5A, 100m Features tm General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench(R) process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed Application High performance trench technology for extremely low rDS(on) High power and current handling capability Power management RoHS Compliant Load switch Battery protection Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25C TC = 25C -Continuous (Silicon limited) ID TA = 25C -Continuous -Pulsed TC = 25C Power Dissipation PD Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range TA = 25C Ratings -60 Units V 20 V -13.5 -14 (Note 1a) -5.7 A -23 42 (Note 1a) 2.1 -55 to +150 W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 3.0 (Note 1a) 60 C/W Package Marking and Ordering Information Device Marking 5614P Device FDMC5614P (c)2010 Fairchild Semiconductor Corporation FDMC5614P Rev.C1 Package Power 33 1 Reel Size 7'' Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET September 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS TJ Breakdown Voltage Temperature Coefficient IGSS Gate to Source Leakage Current IDSS Zero Gate Voltage Drain Current ID = -250A, VGS = 0V -60 ID = -250A, referenced to 25C V -54 VDS = -48V, VGS = 0V VGS = 20V, VDS = 0V mV/C -1 A 100 nA -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = -250A -1 ID = -250A, referenced to 25C 4.7 VGS = -10V, ID = -5.7A VGS = -4.5V, ID = -4.4A VGS = -10V, ID = -5.7A , TJ = 125C VDS = -15V, ID = -5.7A -1.95 mV/C 84 100 108 135 140 168 11 m S Dynamic Characteristics Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = -30V, VGS = 0V, f = 1MHz 795 1055 pF 140 185 pF 60 90 pF 10 21 ns 11 23 ns 32 65 ns Switching Characteristics td(on) Turn-On Delay Time td(off) Turn-Off Delay Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge tr Rise Time tf Fall Time VDD = -30V, ID = -1A VGS = -10V, RGEN = 6 11 22 ns VGS = -10V VDD = -30V ID = -5.7A 15 20 nC 1.6 2.1 nC 2.7 3.5 nC VGS = 0V, IS = -3.2A -0.8 -1.2 V 36 ns 29 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IF = -3.2A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a)RJA = 60C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5'x1.5'x0.062' thick PCB. (b)RJA = 135C/W when mounted on a minimum pad of 2 oz copper. b.135C/W when mounted on a minimum pad of 2 oz copper a. 60C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMC5614P Rev.C1 2 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 25 VGS = -10V VGS = -5V 20 VGS = -4.5V 15 VGS = -3.5V 10 VGS = -3.0V 5 0 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 2.0 1.6 VGS = -10V 1.0 0.8 0 5 10 15 -ID, DRAIN CURRENT(A) 350 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5V 1.2 ID = -5.7A VGS = -10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VDD = -5V 20 15 10 TJ = 5 TJ = 25oC 125oC 1 2 3 4 5 200 PULSE DURATION =300s DUTY CYCLE = 2.0%MAX TJ = 125oC 150 100 50 TJ = 25oC 2 30 10 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 VGS = 0V TJ = 125oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-4 0.2 6 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMC5614P Rev.C1 25 250 1E-3 TJ =-55oC 0 20 Figure 4. On-Resistance vs Gate to Source Voltage 30 25 ID = -5.7A 300 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) VGS = -5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 0 VGS = -3.5V 1.4 Figure 1. On-Region Characteristics 1.8 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = -3.0V 1.8 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted ID = -5.7A 1000 8 VDD = -20V 6 VDD = -30V 4 VDD = -40V 2 0 0 4 8 12 Qg, GATE CHARGE(nC) Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 2000 10 100 Crss 10 0.1 16 f = 1MHz VGS = 0V 8 7 6 5 60 4 TJ = 25oC 2 10 100us 1ms 10ms 100ms 0.1 0.01 TJ = 125oC rDS(on) LIMITED 1 1s 10s DC SINGLE PULSE TJ = MAX RATED o RJA = 135 C/W TA = 25oC 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 1E-3 0.1 100 1 100 200 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area 1000 P(PK), PEAK TRANSIENT POWER (W) 60 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) Figure 7. Gate Charge Characteristics 3 Coss TA = 25oC VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 - T A -----------------------125 10 1 0.5 -4 10 SINGLE PULSE o RJA = 135 C/W -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMC5614P Rev.C1 4 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 1E-3 0.0005 -4 10 t2 SINGLE PULSE o RJA = 135 C/W -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC5614P Rev.C1 5 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FDMC5614P P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout FDMC5614P Rev.C1 6 www.fairchildsemi.com AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM Motion-SPMTM OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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