tm
September 2010
FDMC5614P P-Channel PowerTrench® MOSFET
©2010 Fairchild Semiconductor Corporation
FDMC5614P Rev.C1
www.fairchildsemi.com
1
FDMC5614P
P-Channel PowerTrench® MOSFET
-60V, -13.5A, 100mΩ
Features
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
Low gate charge
Fast switching speed
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS Compliant
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor's advanced PowerTrench® process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V-20V).
Application
Power management
Load switch
Battery protection
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -60 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25°C -13.5
A
-Continuous (Silicon limited) TC = 25°C -14
-Continuous TA = 25°C (Note 1a) -5.7
-Pulsed -23
PD
Power Dissipation TC = 25°C 42 W
Power Dissipation TA = 25°C (Note 1a) 2.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 3.0 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
5614P FDMC5614P Power 33 7’’ 8mm 3000 units
S
S
S
G
D
D
D
D
81
72
3
4
6
5
Pin 1
MLP 3.3x3.3
Bottom
D
D
D
D
S
S
S
G
Top
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P Rev.C1 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V -60 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = -250μA, referenced to 25°C -54 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -48V, VGS = 0V -1 μA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA-1 -1.95 -3 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250μA, referenced to 25°C 4.7 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -10V, ID = -5.7A 84 100
mΩVGS = -4.5V, ID = -4.4A 108 135
VGS = -10V, ID = -5.7A , TJ = 125°C 140 168
gFS Forward Transconductance VDS = -15V, ID = -5.7A 11 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -30V, VGS = 0V,
f = 1MHz
795 1055 pF
Coss Output Capacitance 140 185 pF
Crss Reverse Transfer Capacitance 60 90 pF
Switching Characteristics
td(on) Turn-On Delay Time
VDD = -30V, ID = -1A
VGS = -10V, RGEN = 6Ω
10 21 ns
trRise Time 11 23 ns
td(off) Turn-Off Delay Time 32 65 ns
tfFall Time 11 22 ns
Qg(TOT) Total Gate Charge at 10V VGS = -10V
VDD = -30V
ID = -5.7A
15 20 nC
Qgs Gate to Source Gate Charge 1.6 2.1 nC
Qgd Gate to Drain “Miller” Charge 2.7 3.5 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -3.2A -0.8 -1.2 V
trr Reverse Recovery Time IF = -3.2A, di/dt = 100A/μs 36 ns
Qrr Reverse Recovery Charge 29 nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
b.135°C/W when mounted on a
minimum pad of 2 oz copper
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P Rev.C1 www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
012345
0
5
10
15
20
25
VGS = -4.5V
VGS = -3.0V
VGS = -10V
VGS = -3.5V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
VGS = -5V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 5 10 15 20 25
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS = -3.5V
VGS = -3.0V
VGS = -4.5V
VGS = -5V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = -10V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = -5.7A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
2345678910
50
100
150
200
250
300
350
PULSE DURATION =300μs
DUTY CYCLE = 2.0%MAX
TJ = 125oC
TJ = 25oC
ID = -5.7A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mOHM)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
0123456
0
5
10
15
20
25
30
VDD = -5V
TJ =-55oC
TJ = 25oC
TJ = 125oC
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-4
1E-3
0.01
0.1
1
10
30
TJ = -55oC
TJ = 25oC
TJ = 125oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P Rev.C1 www.fairchildsemi.com
4
Figure 7.
0481216
0
2
4
6
8
10
ID = -5.7A
VDD = -30V
VDD = -20V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -40V
Gate Charge Characteristics Figure 8.
0.1 1 10
10
100
1000
60
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100
1
2
3
4
5
6
7
8
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
-IAS, AVALANCHE CURRENT(A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
0.1 1 10 100
1E-3
0.01
0.1
1
10 100us
60
DC
10s
1s
100ms
10ms
1ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
rDS(on) LIMITED
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
200
F o r w a r d B i a s S a f e
Operating Area
Figure 11.
10-4 10-3 10-2 10-1 100101102103
1
10
100
1000
SINGLE PULSE
RθJA = 135oC/W
0.5
VGS = -10V
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA
–
125
------------------------
Single Pulse Maximum Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P Rev.C1 www.fairchildsemi.com
5
Figure 12. Transient Thermal Response Curve
10-4 10-3 10-2 10-1 100101102103
1E-3
0.01
0.1
1
SINGLE PULSE
RθJA = 135oC/W
DUTY CYCLE-DESCENDING ORDER
0.0005
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P Rev.C1 www.fairchildsemi.com
6
Dimensional Outline and Pad Layout
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Rev. I48
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P Rev.C1 www.fairchildsemi.com
7
