ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMP10A17E6Q
ADVANCE INFO R MA T I O N
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
ID
TA = +25°C
-100V
350mΩ @ VGS= -10V
-1.6A
450mΩ @ VGS= -6.0V
-1.4A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
Ordering Information (Notes 4 & 5)
Part Number
Qualification
Case
Packaging
ZXMP10A17E6QTA
Automotive
SOT26
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
C
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
e3
Equivalent Circuit
Top View
SOT26
YM
1A17 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
SOT26
ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMP10A17E6Q
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current
VGS = 10V
(Note 7)
ID
-1.6
A
TA = +70°C (Note 7)
-1.3
(Note 6)
-1.3
Pulsed Drain Current
VGS= 10V
(Note 8)
IDM
-7.7
A
Continuous Source Current (Body Diode)
(Note 7)
IS
-2.1
A
Pulsed Source Current (Body Diode)
(Note 8)
ISM
-7.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 6)
PD
1.1
8.8
W
mW/°C
(Note 7)
1.7
13.7
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
113
°C/W
(Note 7)
73
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-100
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
µA
VDS = -100V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
-2.0
-4.0
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 9)
RDS(ON)
0.350
Ω
VGS = -10V, ID = -1.4A
0.450
VGS = -6V, ID = -1.2A
Forward Transconductance (Notes 9 & 10)
gfs
2.8
S
VDS = -15V, ID = -1.4A
Diode Forward Voltage (Note 9)
VSD
-0.85
-0.95
V
IS = -1.7A, VGS = 0V
Reverse Recovery Time (Note 10)
trr
33
ns
IS = -1.5A, di/dt = 100A/µs
Reverse Recovery Charge (Note 10)
Qrr
48
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
424
pF
VDS = -50V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
36.6
pF
Reverse Transfer Capacitance
Crss
29.8
pF
Total Gate Charge (Note 11)
Qg
7.1
nC
VGS = -6V
VDS = -50V
ID = -1.4A
Total Gate Charge (Note 11)
Qg
10.7
nC
VGS = -10V
Gate-Source Charge (Note 11)
Qgs
1.7
nC
Gate-Drain Charge (Note 11)
Qgd
3.8
nC
Turn-On Delay Time (Note 11)
tD(on)
3
ns
VDD = -50V, VGS = -10V
ID = -1A, RG 6.0Ω
Turn-On Rise Time (Note 11)
tr
3.5
ns
Turn-Off Delay Time (Note 11)
tD(off)
13.4
ns
Turn-Off Fall Time (Note 11)
tf
7.2
ns
Notes: 6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 5 sec.
8. Same as Note 6, except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
6 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMP10A17E6Q
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
c
0.10
0.20
0.15
D
2.90
3.10
3.00
e
-
-
0.95
e1
-
-
1.90
E
2.70
3.00
2.80
E1
1.50
1.70
1.60
L
0.35
0.55
0.40
a
-
-
8°
a1
-
-
7°
All Dimensions in mm
Dimensions
Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
C1
Y1 G
X
Y
C
ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
7 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMP10A17E6Q
ADVANCE INFO R MA T I O N
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