TLH.54../64.. TELEFUNKEN Semiconductors High Efficiency LED in o 5 mm Tinted Diffused Package Color High efficiency red Yellow Green Type TLHR54../TLHR64.. TLHY54../TLHY64.. TLHG54../TLHG64.. Technology GaAsP on GaP GaAsP on GaP GaP on GaP Angle of Half Intensity o 30 Description 96 11592 The TLH.54.. and 64.. series was developed for standard applications like general indicating and lighting purposes. It is housed in a 5 mm tinted diffused plastic package. The wide viewing angle of these devices provides a high onoff contrast. Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance. TLH.64.. TLH.54.. Features D D D D D D D D D Choice of three bright colors Standard T-13/4 package Small mechanical tolerance Suitable for DC and high peak current Wide viewing angle Luminous intensity categorized Yellow and green color categorized TLH.54.. with stand-offs TLH.64.. without stand-offs Applications Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Rev. A1: 01.06.1995 1 (9) TLH.54../64.. TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25C, unless otherwise specified TLHR54../TLHR64.. ,TLHY54../TLHY64.. ,TLHG54../TLHG64.. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Test Conditions Type Tamb 65C tp 10 ms Tamb 65C t 5 s, 2 mm from body Thermal resistance junction/ambient Symbol VR IF IFSM PV Tj Tamb Tstg Tsd Value 6 30 1 100 100 -20 to +100 -55 to +100 260 Unit V mA A mW C C C C RthJA 350 K/W Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified High efficiency red (TLHR54../TLHR64.. ) Parameter Luminous intensity y Test Conditions IF = 10 mA,, IVmin/IVmax 0.5 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type TLHR5400/6400 TLHR5401/6401 TLHR5405/6405 Symbol IV IV IV ld lp VF VR Cj Min 1.6 4 6.3 612 Symbol IV IV IV ld lp VF VR Cj Min 1.6 4 6.3 581 6 Typ 3.5 7 10 Max 625 635 30 2 15 50 3 Unit mcd mcd mcd nm nm deg V V pF Yellow (TLHY54../TLHY64.. ) Parameter Luminous intensity y Test Conditions IF = 10 mA,, IVmin/IVmax 0.5 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz 2 (9) Type TLHY5400/6400 TLHY5401/6401 TLHY5405/6405 6 Typ 3.5 7 10 Max 594 585 30 2.4 15 50 3 Unit mcd mcd mcd nm nm deg V V pF Rev. A1: 01.06.1995 TLH.54../64.. TELEFUNKEN Semiconductors Green (TLHG54../TLHG64.. ) Parameter Luminous intensity y Test Conditions IF = 10 mA,, IVmin/IVmax 0.5 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type TLHG5400/6400 TLHG5401/6401 TLHG5405/6405 Symbol IV IV IV ld lp VF VR Cj Min 1.6 4 6.3 562 Typ 4 7 15 Max Unit mcd mcd mcd nm nm deg V V pF 575 565 30 2.4 15 50 6 3 Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Tamb IF - Forward Current ( mA ) PV - Power Dissipation ( mW ) 125 100 75 50 25 20 40 60 80 0.1 100 1 10 0.1 1 Figure 3. Forward Current vs. Pulse Length 0 Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) 60 50 40 30 20 10 100 10 tp - Pulse Length ( ms ) 95 10025 Figure 1. Power Dissipation vs. Ambient Temperature 0.2 0.5 1 0.01 100 Tamb - Ambient Temperature ( C ) 95 10918 0.02 0.05 0 0 tp/T=0.01 1000 v65C 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0 95 10046 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Rev. A1: 01.06.1995 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10042 Figure 4. Rel. Luminous Intensity vs. Angular Displacement 3 (9) TLH.54../64.. TELEFUNKEN Semiconductors 10 Iv rel - Relative Luminous Intensity 1000 IF - Forward Current ( mA ) High Efficiency Red 100 tp/T=0.001 tp=10ms 10 1 0.1 2 4 6 8 1 100 10 IF - Forward Current ( mA ) 95 10029 Figure 5. Forward Current vs. Forward Voltage Figure 8. Relative Luminous Intensity vs. Forward Current 1.6 1.2 High Efficiency Red Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 0.1 10 VF - Forward Voltage ( V ) 95 10026 1.2 0.8 0.4 High Efficiency Red 1.0 0.8 0.6 0.4 0.2 IF=10mA 0 0 20 40 60 80 0 590 100 Tamb - Ambient Temperature ( C ) 95 10027 610 630 650 670 690 l - Wavelength ( nm ) 95 10040 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Figure 9. Relative Luminous Intensity vs. Wavelength 2.4 1000 High Efficiency Red 2.0 IF - Forward Current ( mA ) Iv rel - Relative Luminous Intensity 1 0.01 0 1.6 1.2 0.8 Yellow 100 tp/T=0.001 tp=10ms 10 1 0.4 0 95 10321 0.1 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 4 (9) High Efficiency Red 0 95 10030 2 4 6 8 10 VF - Forward Voltage ( V ) Figure 10. Forward Current vs. Forward Voltage Rev. A1: 01.06.1995 TLH.54../64.. TELEFUNKEN Semiconductors 1.2 Yellow Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 1.6 1.2 0.8 0.4 0 20 40 60 80 0.6 0.4 0.2 0 550 100 Tamb - Ambient Temperature ( C ) 95 10031 570 590 610 630 650 l - Wavelength ( nm ) 95 10039 Figure 11. Rel. Luminous Intensity vs. Ambient Temperature Figure 14. Relative Luminous Intensity vs. Wavelength 2.4 1000 Yellow 2.0 IF - Forward Current ( mA ) Iv rel - Relative Luminous Intensity 0.8 IF=10mA 0 1.6 1.2 0.8 Green 100 10 tp/T=0.001 tp=10ms 1 0.4 0 95 10260 0.1 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T 0 4 6 8 10 VF - Forward Voltage ( V ) Figure 15. Forward Current vs. Forward Voltage 10 Iv rel - Relative Luminous Intensity 1.6 Yellow 1 0.1 Green 1.2 0.8 0.4 0.01 IF=10mA 0 1 95 10033 2 95 10034 Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Iv rel - Relative Luminous Intensity Yellow 1.0 10 100 IF - Forward Current ( mA ) Figure 13. Relative Luminous Intensity vs. Forward Current Rev. A1: 01.06.1995 0 95 10035 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 16. Rel. Luminous Intensity vs. Ambient Temperature 5 (9) TLH.54../64.. TELEFUNKEN Semiconductors 1.2 Green Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 2.4 2.0 1.6 1.2 0.8 0.4 Green 1.0 0.8 0.6 0.4 0.2 0 95 10263 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 0 520 95 10038 540 560 580 600 620 l - Wavelength ( nm ) Figure 19. Relative Luminous Intensity vs. Wavelength Iv rel - Relative Luminous Intensity 10 Green 1 0.1 0.01 1 95 10037 10 100 IF - Forward Current ( mA ) Figure 18. Relative Luminous Intensity vs. Forward Current 6 (9) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TLH.54../64.. Dimensions in mm Package TLH.54.. 95 10916 Rev. A1: 01.06.1995 7 (9) TLH.54../64.. TELEFUNKEN Semiconductors Package TLH.64.. 95 10917 8 (9) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TLH.54../64.. Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1: 01.06.1995 9 (9)