CYStech Electronics Corp.
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
BTB772T3/S CYStek Product Specification
Low Vcesat PNP Epitaxial Planar Transistor
BTB772T3/S
Features
• Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A
• Excellent current gain characteristics
• Complementary to BTD882T3/S
• Pb-free package is available
Equivalent Circuit Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
IC(DC) -3 A
Collector Current IC(pulse) -7 *1 A
Pd(Ta=25℃) 1
Power Dissipation
Pd(Tc=25℃) 10 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw≦350µs, Duty≦2%.
BTB772T3/S
TO-126
B：Base
C：Collector
E：Emitter E C B
CYStech Electronics Corp.
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 2/4
BTB772T3/S CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-50µA, IE=0
BVCEO -30 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-50µA, IC=0
ICBO - - -1 µA VCB=-30V, IE=0
IEBO - - -1 µA VEB=-3V, IC=0
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
*hFE1 52 - - - VCE=-2V, IC=-20mA
*hFE2 100 - 500 - VCE=-2V, IC=-1A
fT - 80 - MHz VCE=-5V, IC=-0.1A, f=100MHz
Cob - 55 - pF VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank Q P E
Range 100~200 160~320 250~500
Ordering Information
Device Package Shipping
BTB772T3 TO-126 500 pcs / bag
BTB772T3S TO-126
(Pb-free)
500 pcs / bag
CYStech Electronics Corp.
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 3/4
BTB772T3/S CYStek Product Specification
Characteristic Curves
Current gain vs Collector current
10
100
1000
1 10 100 1000 10000
Collector current---IC(mA)
Current gain---HF
E
VCE=5V
VCE=2
V
VCE=1V
C-E saturation voltage vs Collector current
1
10
100
1000
10000
1 10 100 1000 10000
Collector current---IC(mA)
C-E saturation voltage---VCE(SAT)(mV
)
IC=40IB
IC=20IB
IC=10IB
B-E saturation voltage vs Collector current
100
1000
10000
1 10 100 1000 10000
Collector current---IC(mA)
B-E saturation---VBE(SAT)(mV)
IC=10IB
Power derating curves
0
2
4
6
8
10
12
0 50 100 150 200
Temperature---(℃)
Power Dissipation---(W)
Ta=25℃
Tc=25℃
CYStech Electronics Corp.
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 4/4
BTB772T3/S CYStek Product Specification
TO-126 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
α1 - *3° - *3° F 0.0280 0.0319 0.71 0.81
α2 - *3° - *3° G 0.0480 0.0520 1.22 1.32
α3 - *3° - *3° H 0.1709 0.1890 4.34 4.80
α4 - *3° - *3° I 0.0950 0.1050 2.41 2.66
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
C
F
DE
H
123
KJ
I
α3
α4
L
M
α1
α2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
CYStek Packa
g
e Code: T3
Marking:
B772
