TOSHIBA 188300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 188300 ULTRA HIGH SPEED SWITHING APPLICATION. Unit in mm @ Small Package : SC-70 1.25404 @ Low Forward Voltage > VF (3)=0.92V (Typ.) e Fast Reverse Recovery Time : tpyp=1.6ns (Typ.) 2040.2 @ Small Total Capacitance : Cp=2.2pF (Typ.) MAXIMUM RATINGS (Ta =25C) CHARACTERISTIC SYMBOL | RATING | UNIT 5 ! 33 Maximum (Peak) Reverse Voltage VRM 85 Vv al | | Reverse Voltage VR 80 Vv 5 Maximum (Peak) Forward Current Irm 300 (*) | mA 4 Average Forward Current Io 100 (*) | mA Pe 1. CATHODE r3 Surge Current (10ms) Irom 2 (*) A 2 e SNOB Power Dissipation P 100 mW |lusm , Junction Temperature Tj 125 C JEDEC _ Storage Temperature Tstg 55~125 Cc EIAJ SC-70 (*) Unit Rating. Total Rating=Unit Rating x1.5 TOSHIBA 1-2P1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.006g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT VF(1) |Ip=lmA 0.61) Forward Voltage VF(2) |Ip=10mA 0.74 | Vv VF(3) |Ir=100mA 0.92 | 1.20 I VR=30V 0.1 Reverse Current RQ) R pA IR(2) | VR=80V 0.5 Total Capacitance Cyr Vr=0, f=1MHz 2.2 | 4.0] pF Reverse Recovery Time try Ifp=10mA, Fig.1 1.6 4.0 ns Fig.1 REVERSE RECOVERY TIME (ty-) TEST CIRCUIT MARKING INPUT OUTPUT WAVEFORM WAVEFORM 0.01uF DUT ~ guTPUT > FA 0 _ INPUT Ip= 10mA _ Y A 3 g == 6V Ye I 0.11 SAMPLING R R (RIN =500) PULSE GENERATOR ter (RouT=500) 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2TOSHIBA 188300 Ip VF a a ~ 100m 3 A Co asl & & 10m z Fe Fe pe ce 2 5 o Q a 1lm & z a ico} E g SO 1004 & 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) CT VR f=1MHz Ta=25C TOTAL CAPACITANCE Cr (pF) REVERSE RECOVERY TIME try (us) 0.3 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) IR VR Ta=100C 20 40 60 80 REVERSE VOLTAGE VR (V) trr IF Ta=25C Fig.1 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) 961001 EAA2 CORPORATION for any infringements of intellectual property or other rights o @ The information contained herein is subject to change without notice. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. 1997-05-07 2/2