AON7538
30V N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 30A
R
DS(ON)
(at V
GS
=10V) < 5.1mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 8.2mΩ
Application
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R
DS(on)
at 4.5V V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
V
±20
Gate-Source Voltage
Drain-Source Voltage 30 V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View Bottom View
Pin 1
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Ambient
A
°C/W
R
θJA
24
47 30 Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter Typ Max
V
±20
Gate-Source Voltage
A40
Avalanche energy L=0.01mH
C
Avalanche Current
C
18
Continuous Drain
Current
8
23
Power Dissipation
B
P
D
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
30
23
T
C
=25°C
T
C
=100°C 120Pulsed Drain Current
C
Continuous Drain
Current
G
mJ
2.6
T
A
=25°C
T
C
=25°C
4.2
9
T
C
=100°C
100ns 36 V
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
4.2 60
5.2
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
24
Rev.1.0: August 2013
www.aosmd.com Page 1 of 6
AON7538
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.2 V
4.2 5.1
T
J
=125°C 6 7.2
6.5 8.2 mΩ
g
FS
62 S
V
SD
0.7 1 V
I
S
28 A
C
iss
1128 pF
C
oss
435 pF
C
rss
59 pF
R
g
0.7 1.4 2.1 Ω
Q
g
(10V) 16.2 25 nC
Q
g
(4.5V) 7.4 15 nC
Q
gs
4.3 nC
Q
gd
2.3 nC
t
D(on)
5.5 ns
t
r
3 ns
t
22.5
ns
Turn-On DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
Turn-On Rise Time
Turn-Off DelayTime
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Input Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=10V, I
D
=20A mΩ
V
GS
=4.5V, I
D
=20A
Forward Transconductance V
DS
=5V, I
D
=20A
Diode Forward Voltage I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
V
DS
=V
GS，
I
D
=250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current µA
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
t
D(off)
22.5
ns
t
f
3 ns
t
rr
13.3 ns
Q
rr
25 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
R
GEN
=3
Ω
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: August 2013 www.aosmd.com Page 2 of 6
AON7538
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
10
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3.0V
3.5V
10V
6V
4.5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
5
10
15
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.1.0: August 2013 www.aosmd.com Page 3 of 6
AON7538
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
100
µ
s
IDM limited
40
(Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
RθJC=5.2°C/W
Rev.1.0: August 2013 www.aosmd.com Page 4 of 6
AON7538
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
TA=25°C
40
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
Rev.1.0: August 2013 www.aosmd.com Page 5 of 6
AON7538
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.1.0: August 2013 www.aosmd.com Page 6 of 6